PNP/NPN Epitaxial Planar Silicon Transistors

Switching Applications (with Bias Resistance) Features • Built-in bias resistor (R1 = 22KΩ, R2 = 22KΩ) • Small-sized package(SPA) Applications Switching circuit, inverter, interface circuit, driver

PNP/ NPN EPITAXIAL PLANAR SILICON TRANSISTORS

Switching Applications (with Bias Resistance) Features • Built-in bias resistor (R1 = 46kΩ, R2 = 23kΩ) • Small-sized package(SPA) Applications Switching circuit, inverter, interface circuit, driver

Switching Applications(with Bias Resistance)

Switching Applications (with Bias Resistance) Features • Built-in bias resistor (R1 = 10kΩ, R2 = 10kΩ) • Small-sized package(SPA) Applications Switching circuit, inverter, interface circuit, driver

NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)

DESCRIPTION 2SC3404 is a silicon NPN epitaxial planar type specifically designed for VHF power amplifier applications. APPLICATIONS For output state 1W power amplifiers in VHF band portable type radio sets.

NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS)

Switching Regulator and High Voltage Switching Applications High Speed DC-DC Converter Applications • Excellent switching times: tr = 1.0 μs (max) tf = 1.0 μs (max), (IC = 0.3 A) • High collector breakdown voltage: VCEO = 800 V

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·DC Current Gain- : hFE= 6(Min)@ IC= 1mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

NPN Silicon Triple Diffused Transistor

Features Excellent Switching Times tr=1.0ìs (Max.) tf=1.0ìs (Max.) at IC=0.3A High colletor Breakdown Voltage: VCEO=800V

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·DC Current Gain- : hFE= 6(Min)@ IC= 1mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V (Min) ·High Power Dissipation APPLICATIONS ·Designed for TV horizontal deflection output applications.

Silicon NPN Epitaxial

Application • Low frequency low noise amplifier • HF amplifier

TO-92 Plastic-Encapsulate Transistors

FEATURES High Breakdown Voltage Low Collector Output Capacitance Ideal for Chroma Circuit

Chroma amplifier transistor

Features 1) High breakdown voltage. (BVCEO=300V) 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit.

Chroma Amplifier Transistor (300V, 0.1A)

Features 1) High breakdown voltage. (BVCEO=300V) 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit.

Chroma Amplifier Transistor

Features 1) High breakdown voltage. (BVCEO=300V) 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit.

TO-92 Plastic-Encapsulate Transistors

FEATURES High Breakdown Voltage Low Collector Output Capacitance Ideal for Chroma Circuit

Ultrahigh-Definition CRT Display Video Output Applications

Ultrahigh-Definition CRT DisplayVideo Output Applications Features • High breakdown voltage : VCEO≤200V. • Small reverse transfer capacitance and excellent high frequency characteristics : Cre=1.2pF (NPN), 1.7pF (PNP). • Adoption of FBET process. Applications • Color TV chroma output, high-v

Transistors for TV Display Video Output Use

Transistors for TV Display Video Output Use

Transistors for TV Display Video Output Use

Transistors for TV Display Video Output Use

Ultrahigh-Definition CRT Display Video Output Applications?

Ultrahigh-Definition CRT Display Video Output Applications Features • High breakdown voltage : VCEO≤300V. • Excellent high frequency characteristics : Cre=1.8pF(typ). • Adoption of MBIT process. Applications • Ultrahigh-definition CRT display. • Color TV chroma output, high-voltage driver a

NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

Strobe Flash Applications Audio Power Amplifier Applications • High DC current gain : hFE= 140 to 600 (VCE= 2 V, IC= 0.5 A) : hFE= 70 (min) (VCE= 2 V, IC= 4 A) • Low saturation voltage: VCE (sat)= 1.0 V (max) (IC= 4 A, IB= 0.1 A) • High collec

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·High DC current gain ·Low saturation voltage ·High collector power dissipation APPLICATIONS ·Storobo flash applications ·Medium power amplifier applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·High DC current gain ·Low saturation voltage ·High collector power dissipation APPLICATIONS ·Storobo flash applications ·Medium power amplifier applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·High DC current gain ·Low saturation voltage ·High collector power dissipation APPLICATIONS ·Storobo flash applications ·Medium power amplifier applications

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) ·Complement to Type 2SA1358 APPLICATIONS ·Designed for audio frequency poweramplifier applications. ·Suitable for driver of 60 to 80 Watts audio amplifier.

NPN EPITAXIAL TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)

Audio Frequency Power Amplifier Applications • Complementary to 2SA1358 • Suitable for driver of 60 to 80 watts audio amplifier • High breakdown voltage

NPN EPITAXIAL TYPE (AUDIO FREQUENCY AMPLIFIER APPLICATIONS)

Audio Frequency Amplifier Applications • Complementary to 2SA1360 • Small collector output capacitance: Cob = 1.8 pF (typ.) • High transition frequency: fT = 200 MHz (typ.)

Audio Frequency Amplifier Applications

Audio Frequency Amplifier Applications • Complementary to 2SA1360 • Small collector output capacitance: Cob = 1.8 pF (typ.) • High transition frequency: fT = 200 MHz (typ.)

Audio Frequency Amplifier Applications

Audio Frequency Amplifier Applications • Complementary to 2SA1360 • Small collector output capacitance: Cob = 1.8 pF (typ.) • High transition frequency: fT = 200 MHz (typ.)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2SA1360 • High transition frequency APPLICATIONS • Audio frequency amplifier applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2SA1360 • High transition frequency APPLICATIONS • Audio frequency amplifier applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2SA1360 • High transition frequency APPLICATIONS • Audio frequency amplifier applications

Audio Frequency Amplifier Applications

Audio Frequency Amplifier Applications • Complementary to 2SA1360 • Small collector output capacitance: Cob = 1.8 pF (typ.) • High transition frequency: fT = 200 MHz (typ.)

Audio Frequency Amplifier Applications

Audio Frequency Amplifier Applications • Complementary to 2SA1360 • Small collector output capacitance: Cob = 1.8 pF (typ.) • High transition frequency: fT = 200 MHz (typ.)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TRANSISTOR SILICON NPN DIFFUSED TYPE (PCT PROCESS)

Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications • Excellent switching times: tr = 1.0 μs (max) tf = 1.5 μs (max), (IC = 0.5 A) • High breakdown voltage: VCEO = 400 V

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO = 400 V(Min) ·Complement to the PNP 2SA1924 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general purpose applications.

Silicon NPN Epitaxial Planar Type

Features • Low Noise Figure • NF=1.5dB,|S21e|2=16dB(f=500MHz) • NF=1.5dB,|S21e|2=10.5dB(f=1GHz)

Silicon NPN Epitaxial

Features ● High transition frequency: fT = 400 MHz (typ). ● Low saturation voltage: VCE (sat) = 0.3 V (max). ● High speed switching time: tstg = 15 ns (typ).

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Transition Frequency ● Low Saturation Voltage

TRANSISTOR (NPN)

FEATURES ● High Transition Frequency ● Low Saturation Voltage

NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING, COMPUTER, COUNTER APPLICATIONS)

Ultra High Speed Switching Applications Computer, Counter Applications • High transition frequency: fT = 400 MHz (typ.) • Low saturation voltage: VCE (sat) = 0.3 V (max) • High speed switching time: tstg = 15 ns (typ.)

FOR HIGH VOLTAGE DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION 2SC3438 is a silicon NPN epitaxial type small signal transistor designed for power supply, 20 to 40W output low frequency power amplifier drive applications. Complementary with 2SA1368.

SMALL-SIGNAL TRANSISTOR FOR SMALL TYPE MOTOR PLUGER DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION 2SC3439 is a silicon NPN epitaxial type transistor designed with high collector dissipation, high collector current, high hFE. Complementary with 2SA1369. FEATURES ● High hFE=400 to 1800. ● High collector current (Icm=3A,Ic=1.5A) ● Low VCE(sat) VCE(sat)=0.2V typ(@Ic=1a,IB=20mA)

Small Signal Transistor

Features ● High hFE=400 to 1800. ● High collector current (Icm=3A,Ic=1.5A) ● High collector dissipation Pc=500mW ● Low VCE(sat) VCE(sat)=0.2V typ(@Ic=1a,IB=20mA) ● Small package for mounting.

SILICON NPN EPTAXIAL TRANSISTOR

FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION

FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

Small Signal Transistor

Features • High hFE=150 to 800. • High collector current (Ic=2A). • High collector dissipation Pc=500mW. • Low VCE(sat): VCE(sat)=0.17V typ(@Ic=1A,IB=50mA). • Small package for mounting.

Small Signal Transistor

Features ● High voltage VCEO=60V. ● High collector current (Ic=1A). ● High collector dissipation Pc=500mW. ● Low VCE(sat): VCE(sat)=0.11V typ(@Ic=500mA,IB=25mA). ● Small package for mounting.

FOR LOW FREQUENCY POWER AMPLFY APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION 2SC3444 is a silicon NPN epitaxial type transistor designed for relay drive, power supply application. Complementary with 2SA1364. APPLICATION Audio mahcine, VCR, relay drive, power supply.

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications.

For Switching Regulators

FOR SWITCHING REGULATORS Features • High breakdown voltage and high reliability • Fast switching speed (tf: 0.1 μs typ.) • Wide ASO • Adoption of MBIT process

For Switching Regulators

500V/5A Switching Regulator Applications Features · High breakdown voltage and high reliability. · Fast switching speed (tf : 0.1µs typ). · Wide ASO. · Adoption of MBIT process.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High breakdown voltage and high reliability ·Fast switching speed. ·Wide ASO (Safe Operating Area) APPLICATIONS ·500V/5A switching regulator applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High breakdown voltage and high reliability ·Fast switching speed. ·Wide ASO (Safe Operating Area) APPLICATIONS ·500V/5A switching regulator applications