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2SC329晶体管资料

  • 2SC329别名:2SC329三极管、2SC329晶体管、2SC329晶体三极管

  • 2SC329生产厂家:日本冲电气工业股份公司

  • 2SC329制作材料:Si-NPN

  • 2SC329性质:超高频/特高频 (UHF)

  • 2SC329封装形式:直插封装

  • 2SC329极限工作电压:30V

  • 2SC329最大电流允许值:0.02A

  • 2SC329最大工作频率:1.5GHZ

  • 2SC329引脚数:3

  • 2SC329最大耗散功率:0.2W

  • 2SC329放大倍数

  • 2SC329图片代号:D-13

  • 2SC329vtest:30

  • 2SC329htest:1500000000

  • 2SC329atest:0.02

  • 2SC329wtest:0.2

  • 2SC329代换 2SC329用什么型号代替:BF362,BF363,BF357,BF377,BF378,BFR37,BFW30,BFX73,2SC2570(A),3DG44E,

型号 功能描述 生产厂家 企业 LOGO 操作

For Switching Regulators

For General-Purpose Drivers Features • High DC current gain. • Large current capacity and wide ASO. • Contains 60±10V Zener diode between collector and base. • Uniformity in collector-to-base breakdown voltage due to adoption of accurate impurity diffusion process. • 15mJ rever

SANYO

三洋

Driver Applications

Driver Applications Features • High DC current gain. • Large current capacity and wide ASO. • On-chip Zener diode of 60±10V between collector and base. • Uniformity in collector-to-base breakdown voltage due to the adoption of an accurate impurity diffusion process. • High inductive load han

SANYO

三洋

Driver Applications?

Driver Applications Features • High DC current gain. • Large current capacity and wide ASO. • On-chip Zener diode of 60±10V between collector and base. • Uniformity in collector-to-base breakdown voltage due to adoption of accurate impurity diffusion process. • High inductive l

SANYO

三洋

NPN EPITAXIALTYPE (AUDIO FREQUENC AMPLIFIER, SWITCHING APPLICATIONS)

Audio Frequency Amplifier Applications Switching Applications • High hFE: hFE = 600~3600 • High voltage: VCEO = 50 V • High collector current: IC = 150 mA (max) • Small package

TOSHIBA

东芝

Silicon NPN Epitaxial

Features ● High hFE: hFE = 600~3600. ● High voltage: VCEO = 50 V. ● High collector current: IC = 150 mA (max). ● Small package.

KEXIN

科信电子

Audio Frequency Amplifier Applications Switching Applications

Audio Frequency Amplifier Applications Switching Applications • High hFE: hFE = 600~3600 • High voltage: VCEO = 50 V • High collector current: IC = 150 mA (max) • Small package

TOSHIBA

东芝

Audio Frequency Amplifier Applications

Audio Frequency Amplifier Applications Switching Applications • High hFE: hFE = 600~3600 • High voltage: VCEO = 50 V • High collector current: IC = 150 mA (max) • Small package

TOSHIBA

东芝

Transistor for low frequency small-signal amplification

Feature:High hFE\nPolarity:NPN\nRoHS Compatible Product(s) (#):Available\nAssembly bases:日本 Collector Current IC 0.15 A \nCollector-emitter voltage VCEO 50 V ;

TOSHIBA

东芝

Audio Frequency Amplifier Applications

Audio Frequency Amplifier Applications Switching Applications • High hFE: hFE = 600~3600 • High voltage: VCEO = 50 V • High collector current: IC = 150 mA (max) • Small package

TOSHIBA

东芝

Audio Frequency Amplifier Applications Switching Applications

Audio Frequency Amplifier Applications Switching Applications • High hFE: hFE = 600~3600 • High voltage: VCEO = 50 V • High collector current: IC = 150 mA (max) • Small package

TOSHIBA

东芝

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR,CEO= 150V(Min) • Complement to Type 2SA1304 APPLICATIONS • Power amplifier applications. • Vertical output applications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • Wide area of safe operation • Complement to type 2SA1304 APPLICATIONS • Power amplifier applications • Vertical output applications

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • Wide area of safe operation • Complement to type 2SA1304 APPLICATIONS • Power amplifier applications • Vertical output applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • Wide area of safe operation • Complement to type 2SA1304 APPLICATIONS • Power amplifier applications • Vertical output applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION · With TO-220Fa package ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications

SAVANTIC

Silicon Power Transistors

DESCRIPTION 1. With TO-220Fa package 2. Complement to type : 2SA1306,2SA1306A,2SA1306B APPLICATIONS 1. Power amplifier applications 2. Driver stage amplifier applications

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION ··With TO-220Fa package ·Complement to type 2SA1306,2SA1306A,2SA1306B APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

SAVANTIC

SILICON NPN EPITAXIAL TYPE

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

TOSHIBA

东芝

Silicon Power Transistors

DESCRIPTION 1. With TO-220Fa package 2. Complement to type : 2SA1306,2SA1306A,2SA1306B APPLICATIONS 1. Power amplifier applications 2. Driver stage amplifier applications

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION ··With TO-220Fa package ·Complement to type 2SA1306,2SA1306A,2SA1306B APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

SAVANTIC

SILICON NPN EPITAXIAL TYPE

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

TOSHIBA

东芝

COMPLEMENTARY SILICON POWER TRANSISTORS

SILICON POWER TRANSISTORS 1.5 AMPERES 200 VOLTS 20 WATTS

MOTOROLA

摩托罗拉

Silicon NPN Power Transistors

DESCRIPTION ··With TO-220Fa package ·Complement to type 2SA1306,2SA1306A,2SA1306B APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

SAVANTIC

Silicon Power Transistors

DESCRIPTION 1. With TO-220Fa package 2. Complement to type : 2SA1306,2SA1306A,2SA1306B APPLICATIONS 1. Power amplifier applications 2. Driver stage amplifier applications

JMNIC

锦美电子

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·Complement to type 2SA1307 ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications

ISC

无锡固电

SILICON NPNEPITAXIAL TYPE(PCT PROCESS)

SILICON NPNEPITAXIAL TYPE(PCT PROCESS)

TOSHIBA

东芝

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·Complement to type 2SA1307 ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications

SAVANTIC

NPN Planar Silicon Darlington Transistor Driver Applications

ONSEMI

安森美半导体

NPN Planar Silicon Transistor Driver Applications

ONSEMI

安森美半导体

Audio Frequency Amplifier Applications Switching Applications

文件:114.27 Kbytes Page:4 Pages

TOSHIBA

东芝

Audio Frequency Amplifier Applications Switching Applications

文件:114.27 Kbytes Page:4 Pages

TOSHIBA

东芝

Silicon NPN Power Transistors

文件:201.47 Kbytes Page:4 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

文件:159.26 Kbytes Page:4 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:201.47 Kbytes Page:4 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

文件:201.47 Kbytes Page:4 Pages

JMNIC

锦美电子

Silicon NPN Power Transistor

文件:128.949 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

文件:142.01 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

文件:112.82 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:142.01 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

文件:142.01 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

文件:134.42 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon NPN Power Transistor

文件:343.69 Kbytes Page:2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

文件:118.47 Kbytes Page:3 Pages

SAVANTIC

Silicon Power Transistors

文件:165.27 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon Power Transistors

文件:165.27 Kbytes Page:3 Pages

JMNIC

锦美电子

isc Silicon NPN Power Transistor

文件:343.69 Kbytes Page:2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

文件:343.69 Kbytes Page:2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

文件:134.42 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

文件:118.47 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:118.47 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:134.42 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon NPN Power Transistor

文件:343.69 Kbytes Page:2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

文件:132.58 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

文件:170.43 Kbytes Page:4 Pages

SAVANTIC

2SC329产品属性

  • 类型

    描述

  • 型号

    2SC329

  • 制造商

    SANYO

  • 制造商全称

    Sanyo Semicon Device

  • 功能描述

    For Switching Regulators

更新时间:2026-5-14 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
2016+
SOT23
18000
只做原装,假一罚十,公司可开17%增值税发票!
SANKEN/三垦
25+
TO-220
45000
SANKEN/三垦全新现货2SC3292即刻询购立享优惠#长期有排单订
TOSHIBA/东芝
2540+
S-Mini
8595
只做原装正品假一赔十为客户做到零风险!!
TOSHIBA/东芝
25+
SOT-23
20000
原装
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
TOSHIBA/东芝
21+
SOT-23
33200
优势供应 实单必成 可13点增值税
TOSHIBA
25+
SOT23
30000
代理全新原装现货,价格优势
TOSHIBA/东芝
22+
SOT-23
20000
只做原装
SY
24+
SOT23
5979
全新 发货1-2天
TOSHIBA/东芝
2511
SOT-23
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价

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