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2SC329晶体管资料
2SC329别名：2SC329三极管、2SC329晶体管、2SC329晶体三极管
2SC329生产厂家：日本冲电气工业股份公司
2SC329制作材料：Si-NPN
2SC329性质：超高频/特高频 （UHF）
2SC329封装形式：直插封装
2SC329极限工作电压：30V
2SC329最大电流允许值：0.02A
2SC329最大工作频率：1.5GHZ
2SC329引脚数：3
2SC329最大耗散功率：0.2W
2SC329放大倍数：
2SC329图片代号：D-13
2SC329vtest：30
2SC329htest：1500000000
- 2SC329atest：0.02
2SC329wtest：0.2
2SC329代换 2SC329用什么型号代替：BF362,BF363,BF357,BF377,BF378,BFR37,BFW30,BFX73,2SC2570(A),3DG44E,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
For Switching Regulators For General-Purpose Drivers Features • High DC current gain. • Large current capacity and wide ASO. • Contains 60±10V Zener diode between collector and base. • Uniformity in collector-to-base breakdown voltage due to adoption of accurate impurity diffusion process. • 15mJ rever | SANYO 三洋 |   | ||
Driver Applications Driver Applications Features • High DC current gain. • Large current capacity and wide ASO. • On-chip Zener diode of 60±10V between collector and base. • Uniformity in collector-to-base breakdown voltage due to the adoption of an accurate impurity diffusion process. • High inductive load han | SANYO 三洋 | | ||
Driver Applications? Driver Applications Features • High DC current gain. • Large current capacity and wide ASO. • On-chip Zener diode of 60±10V between collector and base. • Uniformity in collector-to-base breakdown voltage due to adoption of accurate impurity diffusion process. • High inductive l | SANYO 三洋 | | ||
NPN EPITAXIALTYPE (AUDIO FREQUENC AMPLIFIER, SWITCHING APPLICATIONS) Audio Frequency Amplifier Applications Switching Applications • High hFE: hFE = 600~3600 • High voltage: VCEO = 50 V • High collector current: IC = 150 mA (max) • Small package | TOSHIBA 东芝 | | ||
Audio Frequency Amplifier Applications Switching Applications Audio Frequency Amplifier Applications Switching Applications • High hFE: hFE = 600~3600 • High voltage: VCEO = 50 V • High collector current: IC = 150 mA (max) • Small package | TOSHIBA 东芝 | | ||
Audio Frequency Amplifier Applications Audio Frequency Amplifier Applications Switching Applications • High hFE: hFE = 600~3600 • High voltage: VCEO = 50 V • High collector current: IC = 150 mA (max) • Small package | TOSHIBA 东芝 | | ||
Silicon NPN Epitaxial Features ● High hFE: hFE = 600~3600. ● High voltage: VCEO = 50 V. ● High collector current: IC = 150 mA (max). ● Small package. | KEXIN 科信电子 | | ||
Audio Frequency Amplifier Applications Audio Frequency Amplifier Applications Switching Applications • High hFE: hFE = 600~3600 • High voltage: VCEO = 50 V • High collector current: IC = 150 mA (max) • Small package | TOSHIBA 东芝 | | ||
Audio Frequency Amplifier Applications Switching Applications Audio Frequency Amplifier Applications Switching Applications • High hFE: hFE = 600~3600 • High voltage: VCEO = 50 V • High collector current: IC = 150 mA (max) • Small package | TOSHIBA 东芝 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220Fa package • Wide area of safe operation • Complement to type 2SA1304 APPLICATIONS • Power amplifier applications • Vertical output applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR,CEO= 150V(Min) • Complement to Type 2SA1304 APPLICATIONS • Power amplifier applications. • Vertical output applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220Fa package • Wide area of safe operation • Complement to type 2SA1304 APPLICATIONS • Power amplifier applications • Vertical output applications | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220Fa package • Wide area of safe operation • Complement to type 2SA1304 APPLICATIONS • Power amplifier applications • Vertical output applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION · With TO-220Fa package ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications | ISC 无锡固电 | | ||
SILICON NPN EPITAXIAL TYPE Coming Soon. If you have some information on related parts, please share useful information by adding links below. | TOSHIBA 东芝 | | ||
Silicon Power Transistors DESCRIPTION 1. With TO-220Fa package 2. Complement to type : 2SA1306,2SA1306A,2SA1306B APPLICATIONS 1. Power amplifier applications 2. Driver stage amplifier applications | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION ··With TO-220Fa package ·Complement to type 2SA1306,2SA1306A,2SA1306B APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION ··With TO-220Fa package ·Complement to type 2SA1306,2SA1306A,2SA1306B APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | SAVANTIC | | ||
Silicon Power Transistors DESCRIPTION 1. With TO-220Fa package 2. Complement to type : 2SA1306,2SA1306A,2SA1306B APPLICATIONS 1. Power amplifier applications 2. Driver stage amplifier applications | JMNIC 锦美电子 | | ||
Silicon Power Transistors DESCRIPTION 1. With TO-220Fa package 2. Complement to type : 2SA1306,2SA1306A,2SA1306B APPLICATIONS 1. Power amplifier applications 2. Driver stage amplifier applications | JMNIC 锦美电子 | | ||
SILICON NPN EPITAXIAL TYPE Coming Soon. If you have some information on related parts, please share useful information by adding links below. | TOSHIBA 东芝 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS SILICON POWER TRANSISTORS 1.5 AMPERES 200 VOLTS 20 WATTS | Motorola 摩托罗拉 | | ||
Silicon NPN Power Transistors DESCRIPTION ··With TO-220Fa package ·Complement to type 2SA1306,2SA1306A,2SA1306B APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | SAVANTIC | | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·Complement to type 2SA1307 ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications | SAVANTIC | | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·Complement to type 2SA1307 ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications | ISC 无锡固电 | | ||
SILICON NPNEPITAXIAL TYPE(PCT PROCESS) SILICON NPNEPITAXIAL TYPE(PCT PROCESS) | TOSHIBA 东芝 | | ||
NPN Planar Silicon Darlington Transistor Driver Applications | ONSEMI 安森美半导体 | | ||
NPN Planar Silicon Transistor Driver Applications | ONSEMI 安森美半导体 | | ||
Transistor for low frequency small-signal amplification | TOSHIBA 东芝 | | ||
Audio Frequency Amplifier Applications Switching Applications 文件：114.27 Kbytes Page：4 Pages | TOSHIBA 东芝 | | ||
Audio Frequency Amplifier Applications Switching Applications 文件：114.27 Kbytes Page：4 Pages | TOSHIBA 东芝 | | ||
Silicon NPN Power Transistors 文件：201.47 Kbytes Page：4 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：159.26 Kbytes Page：4 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：201.47 Kbytes Page：4 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：201.47 Kbytes Page：4 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：142.01 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistor 文件：128.949 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors 文件：112.82 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：142.01 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：142.01 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：134.42 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
isc Silicon NPN Power Transistor 文件：343.69 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Silicon NPN Power Transistors 文件：118.47 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon Power Transistors 文件：165.27 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon Power Transistors 文件：165.27 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
isc Silicon NPN Power Transistor 文件：343.69 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Silicon NPN Power Transistors 文件：134.42 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
isc Silicon NPN Power Transistor 文件：343.69 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Silicon NPN Power Transistors 文件：118.47 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：118.47 Kbytes Page：3 Pages | SAVANTIC | | ||
isc Silicon NPN Power Transistor 文件：343.69 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Silicon NPN Power Transistors 文件：134.42 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistor 文件：132.58 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors 文件：170.43 Kbytes Page：4 Pages | SAVANTIC | |
2SC329产品属性
- 类型
描述
- 型号
2SC329
- 制造商
SANYO
- 制造商全称
Sanyo Semicon Device
- 功能描述
For Switching Regulators
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANYO/三洋 |
22+ |
TO-220 |
100000 |
代理渠道/只做原装/可含税 |
|||
TOSHIBA/东芝 |
24+ |
NA/ |
9200 |
原装现货,当天可交货,原型号开票 |
|||
TOSHIBA/东芝 |
24+ |
SOT23 |
990000 |
明嘉莱只做原装正品现货 |
|||
TOSHIBA/东芝 |
22+ |
SOT-23 |
20000 |
只做原装 |
|||
TOSHIBA |
SOT-23 |
185600 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
TOSHIBA |
25+ |
SOT23 |
30000 |
代理全新原装现货,价格优势 |
|||
TOSHIBA/东芝 |
20+ |
SOT23 |
32970 |
原装优势主营型号-可开原型号增税票 |
|||
TOSHIBA/东芝 |
21+ |
SOT-23 |
33200 |
优势供应 实单必成 可13点增值税 |
|||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
TOSHIBA |
2016+ |
SOT23 |
18000 |
只做原装,假一罚十,公司可开17%增值税发票! |
2SC329芯片相关品牌
2SC329规格书下载地址
2SC329参数引脚图相关
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2SC329数据表相关新闻
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2023-1-312SC3356
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产品属性 属性值 搜索类似 制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors
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2019-2-18
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