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2SC326晶体管资料
2SC326别名:2SC326三极管、2SC326晶体管、2SC326晶体三极管
2SC326生产厂家:日本冲电气工业股份公司
2SC326制作材料:Si-NPN
2SC326性质:超高频/特高频 (UHF)
2SC326封装形式:直插封装
2SC326极限工作电压:20V
2SC326最大电流允许值:0.05A
2SC326最大工作频率:1GHZ
2SC326引脚数:3
2SC326最大耗散功率:0.25W
2SC326放大倍数:
2SC326图片代号:D-13
2SC326vtest:20
2SC326htest:1000000000
- 2SC326atest:0.05
2SC326wtest:0.25
2SC326代换 2SC326用什么型号代替:BF180,BF362,BF363,BF357,BF377,BFR37,BFW30,BFX73,2SC2570(A),3DG44A,
2SC326价格
参考价格:¥12.6935
型号:2SC3263 品牌:Sanken 备注:这里有2SC326多少钱,2025年最近7天走势,今日出价,今日竞价,2SC326批发/采购报价,2SC326行情走势销售排行榜,2SC326报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
isc Silicon NPN Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage V(BR)CEO= 230V(Min) • Good Linearity of hFE • Complement to Type 2SA1294 APPLICATIONS • Designed for audio and general purpose applications | ISC 无锡固电 | |||
Silicon NPN Epitaxial Planar Transistor(Audio and General Purpose) Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1294) Application : Audio and General Purpose | Sanken 三垦 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type 2SA1294 APPLICATIONS • Audio and general purpose | SAVANTIC | |||
Silicon NPN Power Transistors DESCRIPTION • With MT-200 package • Complement to type 2SA1295 APPLICATIONS • Audio and general purpose applications | SAVANTIC | |||
Silicon NPN Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage V(BR)CEO= 230V(Min) • Good Linearity of hFE • Complement to Type 2SA1295 APPLICATIONS • Designed for audio and general purpose applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
isc Silicon NPN Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage V(BR)CEO= 230V(Min) • Good Linearity of hFE • Complement to Type 2SA1295 APPLICATIONS • Designed for audio and general purpose applications. | ISC 无锡固电 | |||
POWER TRANSISTORS(17A,230V,200W) HIGH-POWER NPN SILICON POWER TRANSISTORS ... designed for use in general-purpose amplifier and switching application. FEATURES: * Recommended for 150W high fidelity audio frequency amplifier output stage * Complementary to 2SA1295 | MOSPEC 统懋 | |||
Silicon NPN Epitaxial Planar Transistor(Audio and General Purpose) Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1295) Application : Audio and General Purpose | Sanken 三垦 | |||
Silicon NPN Epitaxial Planar Transistor Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1295) Application : Audio and General Purpose | ALLEGRO | |||
NPN EPITAXIAL TYPE (LOW FREQUENCY POWER AMPLIFIER, POWER SWITCHING APPLICATIONS) Low Frequency Power Amplifier Applications Power Switching Applications High DC current gain: hFE (1) = 100~320 Low saturation voltage: VCE (sat) = 0.4 V (max) (IC = 500 mA, IB = 20 mA) Complementary to 2SA1298 | TOSHIBA 东芝 | |||
Low Frequency Power Amplifier Applications Power Switching Applications Low Frequency Power Amplifier Applications Power Switching Applications High DC current gain: hFE (1) = 100~320 Low saturation voltage: VCE (sat) = 0.4 V (max) (IC = 500 mA, IB = 20 mA) Complementary to 2SA1298 | TOSHIBA 东芝 | |||
Silicon NPN Epitaxial Features ● High DC current gain: hFE (1) = 100320. ● Low saturation voltage: VCE (sat) = 0.4 V (max) (IC = 500 mA, IB = 20 mA). | KEXIN 科信电子 | |||
SOT-23 Plastic-Encapsulate Transistors FEATURES * High DC current gain * Complementary to KTA1298 | UMW 友台半导体 | |||
NPN General Purpose Amplifier Features · Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) · Power switching application · Complementary to 2SA1298 · Low frequency power amplifier application · Epoxy meets UL 94 V-0 flammability rating · Moisure Sensitivity L | MCC | |||
Low Frequency Power Amplifier Applications Power Switching Applications Low Frequency Power Amplifier Applications Power Switching Applications High DC current gain: hFE (1) = 100~320 Low saturation voltage: VCE (sat) = 0.4 V (max) (IC = 500 mA, IB = 20 mA) Complementary to 2SA1298 | TOSHIBA 东芝 | |||
NPN General Purpose Amplifier Features · Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) · Power switching application · Complementary to 2SA1298 · Low frequency power amplifier application · Epoxy meets UL 94 V-0 flammability rating · Moisure Sensitivity L | MCC | |||
NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS) Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A) • Complementary to 2SA1296 | TOSHIBA 东芝 | |||
NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWICHING APPLICATIONS) Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A • Complementary to 2SA1297 | TOSHIBA 东芝 | |||
MINI PACKAGE SERIES Application General Purpose > Low Noise High Voltage High Current High Current Low Impedance Low Noise (NEW Audio Drive & Out NEW High B Muting & SW FM RF, MIX OSC AM CONV. FM/AM IF AM FF, CONV IF FM/AM RF, MIX OSC Application General Purpose High IYfsl Low Noise Analog SW & Ge | TOSHIBA 东芝 | |||
SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF Band Low Noise Amplifier Applications • NF = 1.7dB, |S21e|2 = 15.0dB (f = 500 MHz) • NF = 2dB, |S21e|2 = 9.5dB (f = 1000 MHz) | TOSHIBA 东芝 | |||
Silicon NPN Epitaxial Planar Transistor 文件:34.37 Kbytes Page:1 Pages | Sanken 三垦 | |||
Silicon NPN Power Transistor 文件:136.45 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon NPN Power Transistors 文件:178.91 Kbytes Page:4 Pages | SAVANTIC | |||
Silicon NPN Epitaxial Planar Transistor 文件:33.9 Kbytes Page:1 Pages | Sanken 三垦 | |||
Silicon NPN Epitaxial Planar Transistor 文件:34.22 Kbytes Page:1 Pages | Sanken 三垦 | |||
封装/外壳:3-ESIP 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 230V 17A MT-200 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | Sanken 三垦 | |||
Silicon NPN Power Transistors 文件:168.83 Kbytes Page:4 Pages | SAVANTIC | |||
三极管 | MOSPEC 统懋 | |||
双极型晶体管/BJT-音频放大 | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
NPN硅外延平面晶体管 (Silicon NPN Epitaxial Planar Transistor) | ALLEGRO | |||
Silicon NPN Epitaxial Planar Transistor 文件:33.75 Kbytes Page:1 Pages | Sanken 三垦 | |||
Low Frequency Power Amplifier Applications Power Switching Applications 文件:184.22 Kbytes Page:4 Pages | TOSHIBA 东芝 | |||
Low Frequency Power Amplifier Applications Power Switching Applications 文件:86.8 Kbytes Page:3 Pages | TOSHIBA 东芝 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:98.08 Kbytes Page:1 Pages | WINNERJOIN 永而佳 | |||
NPN Transistors 文件:582.76 Kbytes Page:3 Pages | YFWDIODE 佑风微 | |||
Low Frequency Power Amplifier Applications Power Switching Applications 文件:86.8 Kbytes Page:3 Pages | TOSHIBA 东芝 | |||
NPN Transistors 文件:1.01269 Mbytes Page:2 Pages | KEXIN 科信电子 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:98.08 Kbytes Page:1 Pages | WINNERJOIN 永而佳 | |||
NPN Transistors 文件:1.02606 Mbytes Page:2 Pages | KEXIN 科信电子 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:98.08 Kbytes Page:1 Pages | WINNERJOIN 永而佳 | |||
NPN Transistors 文件:582.76 Kbytes Page:3 Pages | YFWDIODE 佑风微 | |||
NPN Transistors 文件:1.01269 Mbytes Page:2 Pages | KEXIN 科信电子 | |||
NPN General Purpose Amplifier 文件:395.86 Kbytes Page:3 Pages | MCC | |||
NPN General Purpose Amplifier 文件:395.86 Kbytes Page:3 Pages | MCC | |||
封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:带盒(TB) 描述:TRANS NPN 30V 0.8A SOT23 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | MCC | |||
NPN General Purpose Amplifier 文件:395.86 Kbytes Page:3 Pages | MCC | |||
NPN Transistors 文件:1.01269 Mbytes Page:2 Pages | KEXIN 科信电子 | |||
NPN Transistors 文件:582.76 Kbytes Page:3 Pages | YFWDIODE 佑风微 | |||
Low Frequency Power Amplifier Applications Power Switching Applications 文件:184.22 Kbytes Page:4 Pages | TOSHIBA 东芝 | |||
Power Amplifier Applications Power Switching Applications 文件:96.89 Kbytes Page:3 Pages | TOSHIBA 东芝 | |||
Power Amplifier Applications Power Switching Applications 文件:96.89 Kbytes Page:3 Pages | TOSHIBA 东芝 | |||
Power Amplifier Applications Power Switching Applications 文件:126.98 Kbytes Page:3 Pages | TOSHIBA 东芝 | |||
Power Amplifier Applications Power Switching Applications 文件:126.98 Kbytes Page:3 Pages | TOSHIBA 东芝 | |||
TRANSISTORS TO 92L TO-92LS MRT 文件:195.39 Kbytes Page:2 Pages | ROHM 罗姆 | |||
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE 文件:88.13 Kbytes Page:2 Pages | ROHM 罗姆 |
2SC326产品属性
- 类型
描述
- 型号
2SC326
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY TRANSISTOR MTO-3P 800V 3A 50W BCE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
- |
24+ |
NA/ |
31250 |
原装现货,当天可交货,原型号开票 |
|||
TOSHIBA/东芝 |
25+ |
TO92 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
TOSHIBA/东芝 |
22+ |
SOT-89 |
100000 |
代理渠道/只做原装/可含税 |
|||
TOSHIBA/东芝 |
24+ |
TO92 |
990000 |
明嘉莱只做原装正品现货 |
|||
TOSHIBA |
24+ |
TO-92 |
5000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
TOSHIBA/东芝 |
22+ |
SOT-89 |
20000 |
只做原装 |
|||
TOSHIBA |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
TOSHIBA |
25+ |
SOT-89 |
30000 |
代理全新原装现货,价格优势 |
|||
TOSHIBA/东芝 |
21+ |
SOT-89 |
33200 |
优势供应 实单必成 可13点增值税 |
|||
SOT-89 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
2SC326芯片相关品牌
2SC326规格书下载地址
2SC326参数引脚图相关
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- 2SC3243
- 2SC3242(A)
- 2SC3242
- 2SC3241
- 2SC3240
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2SC326数据表相关新闻
2SC2712G-SOT23.3R-Y-TG
2SC2712G-SOT23.3R-Y-TG
2023-1-312SC3356
2SC3356,全新原装现货0755-82732291当天发货或门市自取. QQ:1755232575 /QQ:1157611585,微信号:87680558.
2021-3-232SC380TM-O
只做原装假一赔十
2020-11-142SC3671-B,T2F(J
产品属性 属性值 搜索类似 制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors
2020-11-52SC2334中文资料
2SC2334中文资料
2019-2-182SC2859中文资料
2SC2859中文资料
2019-2-18
DdatasheetPDF页码索引
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