2SC326晶体管资料

  • 2SC326别名:2SC326三极管、2SC326晶体管、2SC326晶体三极管

  • 2SC326生产厂家:日本冲电气工业股份公司

  • 2SC326制作材料:Si-NPN

  • 2SC326性质:超高频/特高频 (UHF)

  • 2SC326封装形式:直插封装

  • 2SC326极限工作电压:20V

  • 2SC326最大电流允许值:0.05A

  • 2SC326最大工作频率:1GHZ

  • 2SC326引脚数:3

  • 2SC326最大耗散功率:0.25W

  • 2SC326放大倍数

  • 2SC326图片代号:D-13

  • 2SC326vtest:20

  • 2SC326htest:1000000000

  • 2SC326atest:0.05

  • 2SC326wtest:0.25

  • 2SC326代换 2SC326用什么型号代替:BF180,BF362,BF363,BF357,BF377,BFR37,BFW30,BFX73,2SC2570(A),3DG44A,

2SC326价格

参考价格:¥12.6935

型号:2SC3263 品牌:Sanken 备注:这里有2SC326多少钱,2025年最近7天走势,今日出价,今日竞价,2SC326批发/采购报价,2SC326行情走势销售排行榜,2SC326报价。
型号 功能描述 生产厂家 企业 LOGO 操作

isc Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage V(BR)CEO= 230V(Min) • Good Linearity of hFE • Complement to Type 2SA1294 APPLICATIONS • Designed for audio and general purpose applications

ISC

无锡固电

Silicon NPN Epitaxial Planar Transistor(Audio and General Purpose)

Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1294) Application : Audio and General Purpose

Sanken

三垦

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type 2SA1294 APPLICATIONS • Audio and general purpose

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With MT-200 package • Complement to type 2SA1295 APPLICATIONS • Audio and general purpose applications

SAVANTIC

Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage V(BR)CEO= 230V(Min) • Good Linearity of hFE • Complement to Type 2SA1295 APPLICATIONS • Designed for audio and general purpose applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage V(BR)CEO= 230V(Min) • Good Linearity of hFE • Complement to Type 2SA1295 APPLICATIONS • Designed for audio and general purpose applications.

ISC

无锡固电

POWER TRANSISTORS(17A,230V,200W)

HIGH-POWER NPN SILICON POWER TRANSISTORS ... designed for use in general-purpose amplifier and switching application. FEATURES: * Recommended for 150W high fidelity audio frequency amplifier output stage * Complementary to 2SA1295

MOSPEC

统懋

Silicon NPN Epitaxial Planar Transistor(Audio and General Purpose)

Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1295) Application : Audio and General Purpose

Sanken

三垦

Silicon NPN Epitaxial Planar Transistor

Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1295) Application : Audio and General Purpose

ALLEGRO

NPN EPITAXIAL TYPE (LOW FREQUENCY POWER AMPLIFIER, POWER SWITCHING APPLICATIONS)

Low Frequency Power Amplifier Applications Power Switching Applications High DC current gain: hFE (1) = 100~320 Low saturation voltage: VCE (sat) = 0.4 V (max) (IC = 500 mA, IB = 20 mA) Complementary to 2SA1298

TOSHIBA

东芝

Low Frequency Power Amplifier Applications Power Switching Applications

Low Frequency Power Amplifier Applications Power Switching Applications High DC current gain: hFE (1) = 100~320 Low saturation voltage: VCE (sat) = 0.4 V (max) (IC = 500 mA, IB = 20 mA) Complementary to 2SA1298

TOSHIBA

东芝

Silicon NPN Epitaxial

Features ● High DC current gain: hFE (1) = 100320. ● Low saturation voltage: VCE (sat) = 0.4 V (max) (IC = 500 mA, IB = 20 mA).

KEXIN

科信电子

SOT-23 Plastic-Encapsulate Transistors

FEATURES * High DC current gain * Complementary to KTA1298

UMW

友台半导体

NPN General Purpose Amplifier

Features · Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) · Power switching application · Complementary to 2SA1298 · Low frequency power amplifier application · Epoxy meets UL 94 V-0 flammability rating · Moisure Sensitivity L

MCC

Low Frequency Power Amplifier Applications Power Switching Applications

Low Frequency Power Amplifier Applications Power Switching Applications High DC current gain: hFE (1) = 100~320 Low saturation voltage: VCE (sat) = 0.4 V (max) (IC = 500 mA, IB = 20 mA) Complementary to 2SA1298

TOSHIBA

东芝

NPN General Purpose Amplifier

Features · Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) · Power switching application · Complementary to 2SA1298 · Low frequency power amplifier application · Epoxy meets UL 94 V-0 flammability rating · Moisure Sensitivity L

MCC

NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A) • Complementary to 2SA1296

TOSHIBA

东芝

NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWICHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A • Complementary to 2SA1297

TOSHIBA

东芝

MINI PACKAGE SERIES

Application General Purpose > Low Noise High Voltage High Current High Current Low Impedance Low Noise (NEW Audio Drive & Out NEW High B Muting & SW FM RF, MIX OSC AM CONV. FM/AM IF AM FF, CONV IF FM/AM RF, MIX OSC Application General Purpose High IYfsl Low Noise Analog SW & Ge

TOSHIBA

东芝

SILICON NPN EPITAXIAL PLANAR TYPE

VHF~UHF Band Low Noise Amplifier Applications • NF = 1.7dB, |S21e|2 = 15.0dB (f = 500 MHz) • NF = 2dB, |S21e|2 = 9.5dB (f = 1000 MHz)

TOSHIBA

东芝

Silicon NPN Epitaxial Planar Transistor

文件:34.37 Kbytes Page:1 Pages

Sanken

三垦

Silicon NPN Power Transistor

文件:136.45 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

文件:178.91 Kbytes Page:4 Pages

SAVANTIC

Silicon NPN Epitaxial Planar Transistor

文件:33.9 Kbytes Page:1 Pages

Sanken

三垦

Silicon NPN Epitaxial Planar Transistor

文件:34.22 Kbytes Page:1 Pages

Sanken

三垦

封装/外壳:3-ESIP 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 230V 17A MT-200 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Sanken

三垦

Silicon NPN Power Transistors

文件:168.83 Kbytes Page:4 Pages

SAVANTIC

三极管

MOSPEC

统懋

双极型晶体管/BJT-音频放大

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

NPN硅外延平面晶体管 (Silicon NPN Epitaxial Planar Transistor)

ALLEGRO

Silicon NPN Epitaxial Planar Transistor

文件:33.75 Kbytes Page:1 Pages

Sanken

三垦

Low Frequency Power Amplifier Applications Power Switching Applications

文件:184.22 Kbytes Page:4 Pages

TOSHIBA

东芝

Low Frequency Power Amplifier Applications Power Switching Applications

文件:86.8 Kbytes Page:3 Pages

TOSHIBA

东芝

NPN EPITAXIAL SILICON TRANSISTOR

文件:98.08 Kbytes Page:1 Pages

WINNERJOIN

永而佳

NPN Transistors

文件:582.76 Kbytes Page:3 Pages

YFWDIODE

佑风微

Low Frequency Power Amplifier Applications Power Switching Applications

文件:86.8 Kbytes Page:3 Pages

TOSHIBA

东芝

NPN Transistors

文件:1.01269 Mbytes Page:2 Pages

KEXIN

科信电子

NPN EPITAXIAL SILICON TRANSISTOR

文件:98.08 Kbytes Page:1 Pages

WINNERJOIN

永而佳

NPN Transistors

文件:1.02606 Mbytes Page:2 Pages

KEXIN

科信电子

NPN EPITAXIAL SILICON TRANSISTOR

文件:98.08 Kbytes Page:1 Pages

WINNERJOIN

永而佳

NPN Transistors

文件:582.76 Kbytes Page:3 Pages

YFWDIODE

佑风微

NPN Transistors

文件:1.01269 Mbytes Page:2 Pages

KEXIN

科信电子

NPN General Purpose Amplifier

文件:395.86 Kbytes Page:3 Pages

MCC

NPN General Purpose Amplifier

文件:395.86 Kbytes Page:3 Pages

MCC

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:带盒(TB) 描述:TRANS NPN 30V 0.8A SOT23 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

NPN General Purpose Amplifier

文件:395.86 Kbytes Page:3 Pages

MCC

NPN Transistors

文件:1.01269 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:582.76 Kbytes Page:3 Pages

YFWDIODE

佑风微

Low Frequency Power Amplifier Applications Power Switching Applications

文件:184.22 Kbytes Page:4 Pages

TOSHIBA

东芝

Power Amplifier Applications Power Switching Applications

文件:96.89 Kbytes Page:3 Pages

TOSHIBA

东芝

Power Amplifier Applications Power Switching Applications

文件:96.89 Kbytes Page:3 Pages

TOSHIBA

东芝

Power Amplifier Applications Power Switching Applications

文件:126.98 Kbytes Page:3 Pages

TOSHIBA

东芝

Power Amplifier Applications Power Switching Applications

文件:126.98 Kbytes Page:3 Pages

TOSHIBA

东芝

TRANSISTORS TO 92L TO-92LS MRT

文件:195.39 Kbytes Page:2 Pages

ROHM

罗姆

1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE

文件:88.13 Kbytes Page:2 Pages

ROHM

罗姆

2SC326产品属性

  • 类型

    描述

  • 型号

    2SC326

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TRANSISTOR MTO-3P 800V 3A 50W BCE

更新时间:2025-12-25 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
-
24+
NA/
31250
原装现货,当天可交货,原型号开票
TOSHIBA/东芝
25+
TO92
54648
百分百原装现货 实单必成 欢迎询价
TOSHIBA/东芝
22+
SOT-89
100000
代理渠道/只做原装/可含税
TOSHIBA/东芝
24+
TO92
990000
明嘉莱只做原装正品现货
TOSHIBA
24+
TO-92
5000
只做原装正品现货 欢迎来电查询15919825718
TOSHIBA/东芝
22+
SOT-89
20000
只做原装
TOSHIBA
原厂封装
9800
原装进口公司现货假一赔百
TOSHIBA
25+
SOT-89
30000
代理全新原装现货,价格优势
TOSHIBA/东芝
21+
SOT-89
33200
优势供应 实单必成 可13点增值税
SOT-89
23+
NA
15659
振宏微专业只做正品,假一罚百!

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