2SC323晶体管资料

  • 2SC323别名:2SC323三极管、2SC323晶体管、2SC323晶体三极管

  • 2SC323生产厂家:日本东芝公司

  • 2SC323制作材料:Si-NPN

  • 2SC323性质:通用型 (Uni)

  • 2SC323封装形式:直插封装

  • 2SC323极限工作电压:40V

  • 2SC323最大电流允许值:0.1A

  • 2SC323最大工作频率:250MHZ

  • 2SC323引脚数:3

  • 2SC323最大耗散功率:0.25W

  • 2SC323放大倍数

  • 2SC323图片代号:D-8

  • 2SC323vtest:40

  • 2SC323htest:250000000

  • 2SC323atest:0.1

  • 2SC323wtest:0.25

  • 2SC323代换 2SC323用什么型号代替:BC107,BC167,BC171,BC183,BC207,BC237,BC383,BC547,BC583,2N2220,2N2221,2N222,3DG120C,

型号 功能描述 生产厂家 企业 LOGO 操作

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • Complement to type 2SA1276 • Good linearity of hFE APPLICATIONS • General purpose applications • Cordless telephone tx final amplifier application for 1.7MHz system

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage : V(BR)CEO= 30V(Min) • Good Linearity of hFE • Complement to Type 2SA1276 APPLICATIONS • Designed for general purpose applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • Complement to type 2SA1276 • Good linearity of hFE APPLICATIONS • General purpose applications • Cordless telephone tx final amplifier application for 1.7MHz system

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • Wide area of safe operation APPLICATIONS • Switching regulators • General purpose power amplifiers • TV horizontal output applications

SAVANTIC

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakddown Voltage : V(BR)CEO= 60V(Min) • Large Current Capability • High Collector PowerDissipation APPLICATIONS • Designedfor B/W TV horizontal deflection output applications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • Wide area of safe operation APPLICATIONS • Switching regulators • General purpose power amplifiers • TV horizontal output applications

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 20(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 20(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 20(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 20(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • High voltage,high speed • Low saturation voltage APPLICATIONS • For high voltage ,high speed and high power switching applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • High voltage,high speed • Low saturation voltage APPLICATIONS • For high voltage ,high speed and high power switching applications

SAVANTIC

SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATION.

FEATURES: -Excellent Switching Times : tr-1.0μs (Max.), tf-1.0μs (Max.) at Ic=4A -High Collector Breakdown Voltage: VCEO-400V

TOSHIBA

东芝

HIGH CURRENT SWITCHING APPLICATIONS.

FEATURES: -Low Collector Saturation Voltage : VCE (sat) 0.4V (Max.) (at Ic-3A) -High Speed Switching Time: tstg=1.0μs (Typ.) -Complementary to 25A1279

TOSHIBA

东芝

2SC3229

文件:177.97 Kbytes Page:5 Pages

KEC

KEC(Korea Electronics)

Silicon NPN Power Transistors

文件:96.64 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:91.2 Kbytes Page:3 Pages

SAVANTIC

2SC3229

文件:177.97 Kbytes Page:5 Pages

KEC

KEC(Korea Electronics)

NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS)

文件:165.19 Kbytes Page:3 Pages

TOSHIBA

东芝

NPN Silicon Triple Diffused

文件:42.78 Kbytes Page:1 Pages

KEXIN

科信电子

Transistor Silicon NPN Triple Diffused Type Switching Regulator and High Voltage Switching Applications High Speed DC-DC Converter Applications

TOSHIBA

东芝

NPN POWER 150V 1.5A TO-220

文件:87.45 Kbytes Page:1 Pages

SYC

Silicon NPN Power Transistors

文件:90.21 Kbytes Page:3 Pages

SAVANTIC

2SC323产品属性

  • 类型

    描述

  • 型号

    2SC323

  • 制造商

    SAVANTIC

  • 制造商全称

    Savantic, Inc.

  • 功能描述

    Silicon NPN Power Transistors

更新时间:2025-12-25 17:37:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
23+
CAN to-39
16900
正规渠道,只有原装!
MITSUBIS
23+
TO-59
3200
专营高频管模块,全新原装!
ROHM
TO92
4370
全新原装进口自己库存优势
MITSUBIS
20+
高频管
29516
高频管全新原装主营-可开原型号增税票
ST
26+
CAN to-39
60000
只有原装 可配单
MITSUBISHI/三菱
21+
120000
长期代理优势供应
Mitsubishi Electric (三菱)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ROHM/罗姆
23+
TO-92S
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
24+
TO-3
460
FREESCALE
24+
TO-59
332
价格优势

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