2SC298晶体管资料

  • 2SC298别名:2SC298三极管、2SC298晶体管、2SC298晶体三极管

  • 2SC298生产厂家:日本索尼公司

  • 2SC298制作材料:Si-NPN

  • 2SC298性质:低频或音频放大 (LF)_开关管 (S)

  • 2SC298封装形式:直插封装

  • 2SC298极限工作电压:100V

  • 2SC298最大电流允许值:3A

  • 2SC298最大工作频率:90MHZ

  • 2SC298引脚数:3

  • 2SC298最大耗散功率:10W

  • 2SC298放大倍数

  • 2SC298图片代号:E-36

  • 2SC298vtest:100

  • 2SC298htest:90000000

  • 2SC298atest:3

  • 2SC298wtest:10

  • 2SC298代换 2SC298用什么型号代替:BD791,BFT33,MJE243,MJE244,2N4309,2N4897,2N5339,3DK204B,

型号 功能描述 生产厂家 企业 LOGO 操作

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High voltatge • High speed APPLICATIONS • For high voltatge ,high speed and power switching applications

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus)= 800V(Min) • Collector-Emitter Saturation Voltage- :VCE(sat)=1.0V(Max)@lc=2A • Fast Switching Speed APPLICATIONS • Designed for high-voltage, high-speed and high power switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High voltatge • High speed APPLICATIONS • For high voltatge ,high speed and power switching applications

SAVANTIC

Medium Power Amplifier Applications

■ Features ● Low saturation voltage ● Small flat package ● PC = 1.0 to 2.0 W (mounted on a ceramic substrate) ● Complementary to 2SA1314

KEXIN

科信电子

TRANSISTOR (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

Storobo Flash Applications Medium Power Amplifier Applications • High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A) • Low saturation voltage : VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA)

TOSHIBA

东芝

TRANSISTOR (POWER, DIRVER STAGE AMPLIFIER APPLICATIONS)

Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

isc Silicon NPN Power Transistor

DESCRIPTION • Excellent linearity of hFE • Low collector-to-emitter saturation voltage • Fast switching speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • High transistor frequency

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Designed for power amplifier and driver stage amplifier applications

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Designed for power amplifier and driver stage amplifier applications

ISC

无锡固电

NPN Silicon Epitaxial Transistor

Features ● High Transiton Frequency: Ft=100MHz(TYP.)

KEXIN

科信电子

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Transition Frequency

JIANGSU

长电科技

Silicon NPN Power Transistor

DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Designed for power amplifier and driver stage amplifier applications

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Designed for power amplifier and driver stage amplifier applications

ISC

无锡固电

NPN Plastic-Encapsulate Transistors

Features • Low Collector Saturation Voltage • Execllent current-to-gain characteristics • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF

MCC

NPN Plastic-Encapsulate Transistors

Features • Low Collector Saturation Voltage • Execllent current-to-gain characteristics • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF

MCC

PNP SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR

PNP Silicon Epitaxial/NPN Silicon Triple Diffused Transistor Audio Frequency Power Amplifier

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type 2SA1227 • High power dissipation APPLICATIONS • For audio frequency power amplifier applications

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage : V(BR)CEO= 140V(Min) • Good Linearity of hFE • Complement to Type 2SA1227 APPLICATIONS • For audio frequency power amplifier applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type 2SA1227 • High power dissipation APPLICATIONS • For audio frequency power amplifier applications

SAVANTIC

PNP SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR

PNP Silicon Epitaxial/NPN Silicon Triple Diffused Transistor Audio Frequency Power Amplifier

ETCList of Unclassifed Manufacturers

未分类制造商

Transistors (Selection Guide by Applications and Functions)

● High Speed Switch • VCO and High Frequency Type ● High Frequency Amplifiers and Others ● High Frequency Silicon Transistors for Transmitters

Panasonic

松下

Silicon NPN Power Transistors

文件:116.93 Kbytes Page:3 Pages

SAVANTIC

Storobo Flash Applications Medium Power Amplifier Applications

文件:150.17 Kbytes Page:4 Pages

TOSHIBA

东芝

Storobo Flash Applications Medium Power Amplifier Applications

文件:150.17 Kbytes Page:4 Pages

TOSHIBA

东芝

NPN Transistors

文件:976.82 Kbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:976.82 Kbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.2061 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:976.82 Kbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.2061 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:976.82 Kbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.2061 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:976.82 Kbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.2061 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.2061 Mbytes Page:2 Pages

KEXIN

科信电子

Power Amplifier Applications Driver Stage Amplifier Applications

文件:155.58 Kbytes Page:4 Pages

TOSHIBA

东芝

Transistors

WILLAS

威伦电子

160V,1.5A,Medium Power NPN Bipolar Transistor

GALAXY

银河微电

Power transistor for high-speed switching applications

TOSHIBA

东芝

Power Amplifier Applications Driver Stage Amplifier Applications

文件:155.58 Kbytes Page:4 Pages

TOSHIBA

东芝

isc Silicon NPN Power Transistor

文件:279.7 Kbytes Page:2 Pages

ISC

无锡固电

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:散装 描述:TRANS NPN 160V 1.5A DPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

Silicon NPN Power Transistors

文件:140.78 Kbytes Page:3 Pages

SAVANTIC

Complement to Type 2SA1227A

文件:98.36 Kbytes Page:2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

文件:131.51 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

封装/外壳:TO-225AA,TO-126-3 包装:散装 描述:TRANS NPN 16V 0.5A TO126B-A1 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Panasonic

松下

2SC298产品属性

  • 类型

    描述

  • 型号

    2SC298

  • 制造商

    Toshiba

  • 功能描述

    NPN

更新时间:2025-12-25 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
22+
SOT89
100000
代理渠道/只做原装/可含税
MSV/萌盛微
24+
NA/
4250
原装现货,当天可交货,原型号开票
TOSHIBA/东芝
25+
SOT-89
54558
百分百原装现货 实单必成 欢迎询价
TOSHIBA
24+
SOT89
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
TOSHIBA/东芝
24+
SOT89
900
全新原装数量均有多电话咨询
TOSHIBA
24+
SOT-89
96000
公司大量原装现货,欢迎来电
原装进口TOSHIBA
24+
SOT-89
6500
只做原装正品现货 欢迎来电查询15919825718
TOSHIBA
22+
TO-89
20000
公司只有原装 品质保证
TOSHIBA
原厂封装
9800
原装进口公司现货假一赔百
TOSHIBA
NEW
SOT-89
9526
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订

2SC298数据表相关新闻

  • 2SC2712G-SOT23.3R-Y-TG

    2SC2712G-SOT23.3R-Y-TG

    2023-1-31
  • 2SC3356

    2SC3356,全新原装现货0755-82732291当天发货或门市自取. QQ:1755232575 /QQ:1157611585,微信号:87680558.

    2021-3-23
  • 2SC380TM-O

    只做原装假一赔十

    2020-11-14
  • 2SC3671-B,T2F(J

    产品属性 属性值 搜索类似 制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors

    2020-11-5
  • 2SC2334中文资料

    2SC2334中文资料

    2019-2-18
  • 2SC2859中文资料

    2SC2859中文资料

    2019-2-18