NPN SILICON TRANSISTOR

DESCRIPTION The 2SC2901 is designed for general purpose amplifier and high speed switching applications. FEATURES ● High Frequency Current Gain. ● High Speed Switching. ● Small Output Capacitance.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor controls

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor controls

NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)

DESCRIPTION 2SC2904 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. APPLICATIONS Output stage of transmitter in HF band SSB mobile radio sets.

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 2SC2904 is a silicon epitaxial plana type transistor designed for high power amplifiers in HF band. FEATURES: • Internal Input Matching Network • PG = 11.5 dB at 1000 W/30 MHz • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 2SC2905 is designed for high power amplifier applications in UHF band. FEATURES: • Emitter Ballasted construction. • PG = 4.8 dB at 45 W/520 MHz • Omnigold™ Metalization System • Common Emitter

NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)

DESCRIPTION 2SC2905 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers applications in UHF band. APPLICATION For output stage of 35 - 40W power amplifiers in UHF band.

POWER TRANSISTORS(5.0A,100V,50W)

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Low collector saturation voltage APPLICATIONS • For use in power amplifier and switching circuits applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Low collector saturation voltage APPLICATIONS • For use in power amplifier and switching circuits applications

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO=100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):1.0V(Max) @IC=3A, IB=0.3A APPLICATIONS · Switching Regulators · Converters · Power Amplifiers

High-Voltage Switching, AF 60W Predriver Applications

High-Voltage Switching AF 60W Predriver Applications Features • Adoption of FBET process. • High breakdown voltage. • Excellent linearity of hFE and small Cob. • Fast switching speed.

High-Voltage Switching, Audio 80W Output Predriver Applications

2SA1208 --> PNP 2SC2910 --> NPN High-Voltage Switching Audio 80W Output Predriver Applications Features · Adoption of FBET process. · High breakdown voltage. · Excellent linearity of hFE and small Cob. · Fast swtching speed.

160V/140mA High-Voltage Switching AF 100W Predriver Applications

160V/140mA High-Voltage Switching and AF 100W Predriver Applications Features • Adoption of FBET process. • High breakdown voltage. • Good linearity of hFE and small Cob. • Fast switching speed.

HIGH VOLTAGE SWITCHING, AF 150W PREDRIVER APPLICATIONS

High Voltage Switching, AF 150W predriver Applications Features Adoption of FBET process High breakdown voltage Good linearity of hFE and small Cob Fast switching speed

Silicon NPN Power Transistors

DESCRIPTION • With TO-66 package • High breakdown voltage • Fast switching speed. • Wide area of safe operation APPLICATIONS • For switching regulator applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-66 package • High breakdown voltage • Fast switching speed. • Wide area of safe operation APPLICATIONS • For switching regulator applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications

SILCON NPN TRIPLE DIFFUSED TYPE

SILICON HIFH SPEED POWER TRANSISTOR

Features ◆ High voltage ◆ Ultra-fast switching ◆ Large safe operating arearae Applications ◆ Switching regulators ◆ Motor controls ◆ Ultrasonic oscillators ◆ Class C and D amplifiers ◆ Deflection circuits

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • Fast switching speed. • Wide area of safe operation APPLICATIONS • For switching regulator applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • Fast switching speed. • Wide area of safe operation APPLICATIONS • For switching regulator applications

NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER ● High Current Capability ● High Power Dissipation ● Complementary to 2SA1215

Silicon NPN Power Transistors

DESCRIPTION • With MT-200 package • Complement to type 2SA1215 APPLICATIONS • Audio and general purpose

Silicon NPN Power Transistors

DESCRIPTION • With MT-200 package • Complement to type 2SA1215 APPLICATIONS • Audio and general purpose

Silicon NPN Epitaxial Planar Transistor(Audio and General Purpose)

Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1215) Application : Audio and General Purpose

POWER TRANSISTORS(15A,160V,150W)

HIGH-POWER NPN SILICON POWER TRANSISTORS 15 AMPERE POWER TRANSISTOR 160 VOLTS 150 WATTS

Silicon NPN Power Transistor

DESCRIPTION • Collector-EmitterBreakdownVoltage- -. V(BR)CEO= 160V(Min) • High Power Dissipation • Complement to Type 2SA1215 APPLICATIONS • For audio and general purpose application

POWER TRANSISTORS(17A,180V,200W)

High-power npn silicon power transistors ... designed for use in general-purpose amplifier and switching application. FEATURES * Recommend for 150W high Fiderity Audio Frequency Amplifier Output stage * Complementary to 2SA1216

Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION)

GENERAL DESCRIPTION High frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose

Silicon NPN Power Transistors

DESCRIPTION ·With MT-200 package ·Complement to type 2SA1216 APPLICATIONS ·Audio and general purpose

Silicon NPN Epitaxial Planar Transistor(Audio and General Purpose)

Complement to type 2SA1216 Application : Audio and General Purpose

Silicon NPN Power Transistors

DESCRIPTION ·With TO-202 package ·High VCEO ·Low COB APPLICATIONS ·For color TV chroma output applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·High VCEO ·Low COB APPLICATIONS ·For color TV chroma output applications

Silicon NPN epitaxial planer type(For low-frequency output amplification0

■ Features ● High foward current transfer ratio hFE. ● Low collector to emitter saturation voltage VCE(sat).

Epitaxial Planar NPN Silicon Transistors

Epitaxial Planar NPN Silicon Transistors

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • High collector-emitter voltage : VCEO=300V • High frequency:fT=40MHz(Min) APPLICATIONS • For use in line-operated color TV chroma output circuits and sound output circuits.

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • High collector-emitter voltage : VCEO=300V • High frequency:fT=40MHz(Min) APPLICATIONS • For use in line-operated color TV chroma output circuits and sound output circuits.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·For high voltage,high speed and high power switching applications

HIGH VOLTAGE, HIGH SPEED AND HIGH POWER SWITCHING

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Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·For high voltage,high speed and high power switching applications

High speed switching transistor

[COLLMER SEMICONDUCTOR] High speed switching transistor

MOLD TYPE BIPOLAR TRANSISTORS

MOLD TYPE BIPOLAR TRANSISTORS Rating and Specifications

isc Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • High Switching Speed • High Reliability APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers

TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE, HIGH SPEED SWITCHING

TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE, HIGH SPEED SWITCHING ■ Features ● High speed switching ● High reliability ■ Applications ● Switching regulators ● Ultrasonic generators ● High frequency inverters ● General purpose power amplifiers

NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)

DESCRIPTION 2SC2932 is a silicon NPN epitaxial planar type transistor specifically designed for power amplifiers applications in 800 - 940 MHz UHF band. APPLICATION RF power amplifier applications in 800 to 940 MHz mobile radio set.

NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)

DESCRIPTION 2SC2933 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers applications in 800 ~ 940MHz band. APPLICATION Output stage of power amplifiers in 800MHz band mobile radio equipment

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • High VCEO • Low COB APPLICATIONS • For TV video output amplification

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • High VCEO • Low COB APPLICATIONS • For TV video output amplification

Silicon NPN Power Transistors

DESCRIPTION ·With TO-247 package ·Switching power transistor ·High breakdown voltage APPLICATIONS ·For switching regulator applications

Silicon NPN Power Transistors

DESCRIPTION · With TO-247 package ·Switching power transistor ·High breakdown voltage APPLICATIONS ·For switching regulator applications

POWER TRANSISTORS(10A,400V,100W)

SWITCHMODE SERIES NPN POWER TRANSISTORS ... designed for use in high-voltage, high-speed, power switching applications such as switching regulators, inverters, and converter. FEATURES * Collector-Emitter Sustaining Voltage - VCEO(sus) = 400 V (Min) * Collector-Emitter Saturation Voltage -

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector-Emitter Sustaining Voltage : VCEO(SUS)= 800V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed and high power applications.

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEo(sus)= 400V(Min) • Fast Switching Speed APPLICATIONS • Designed for use in high-voltage, high-speed, power switching applications.

Silicon NPN Power Transistors

DESCRIPTION • With TO-247 package • Switching power transistor • High breakdown voltage APPLICATIONS • For switching regulator applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-247 package • Switching power transistor • High breakdown voltage APPLICATIONS • For switching regulator applications

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • High reliability • Low saturation voltage APPLICATIONS • Color & B/W TV power supply • Active power filter • Industrial use power supply • General purpose power amplifiers

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • High reliability • Low saturation voltage APPLICATIONS • Color & B/W TV power supply • Active power filter • Industrial use power supply • General purpose power amplifiers