TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS)

High Voltage Switching Applications High voltage: VCEO= 150 V High transition frequency: fT= 120 MHz Small flat package PC= 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1200

High Voltage Switching Applications

■ Features ● High Voltage:VCEO=150V ● High Transition Frequency ● Small Flat Package ● Complementary to 2SA1200

VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS

VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS FEATURES * High voltage: VCEO=120V * High transition frequency: fT=120MHz(typ.) * Complementary to 2SA1201

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Voltage Amplifier Applications Power Amplifier Applications • High voltage: VCEO = 120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate) • Complementary to 2SA1201

Voltage Amplifier Applications

Features ● High Voltage : VCEO = 120V ● High Transition Frequency : fT = 120MHz(typ.) ● Small Flat Package ● Complementary to 2SA1201

TRANSISTOR (NPN)

FEATURES ● Small Flat Package ● High Transition Frequency ● High Voltage ● Complementary to 2SA1201 APPLICATIONS ● Power Amplifier and Voltage Amplifier VCBO Collector-Base Voltage 120V VCEO Collector-Emitter Voltage 120V VEBO Emitter-Base Voltage 5V IC Collector Current 800mA PC Co

NPN Transistors

■ Features ● Small Flat Package ● High Transition Frequency ● High Voltage ● Complementary to 2SA1201

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Small Flat Package ● High Transition Frequency ● High Voltage ● Complementary to 2SA1201 APPLICATIONS ● Power Amplifier and Voltage Amplifier

Plastic-Encapsulate Transistors

FEATURES • High voltage:VCEO=120V • High transition frequency;fT=120MHz. • PC=500mW. • Complements the 2SA1201

Voltage Amplifier Applications

Features • High Voltage : VCEO = 120V • High Transition Frequency : fT = 120MHz(typ.) • Small Flat Package • Complementary to 2SA1201

丝印代码：DKP；NPN Silicon Epitaxial Planar Transistor

FEATURES ● High voltage:VCEO=120V ● High transition frequency;fT=120MHz. ● PC=500mW. ● Complements the 2SA1201. APPLICATIONS ● Power and voltage amplifier application.

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 500 mW (Tamb=25℃) Collector current ICM: 800 mA Collector-base voltage V(BR)CBO: 120 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

SOT-89 Plastic-Encapsulate Transistors

FEATURES ● Small Flat Package ● High Transition Frequency ● High Voltage APPLICATIONS ● Power Amplifier and Voltage Amplifier

Silicon NPN transistor in a SOT-89 Plastic Package

Descriptions Silicon NPN transistor in a SOT-89 Plastic Package. Features Silicon NPN transistor in a SOT-89 Plastic Package. Applications Power amplifier applications.

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

丝印代码：CO1；NPN Silicon Epitaxial Planar Transistor

FEATURES High voltage:VCEO=120V High transition frequency;fT=120MHz. PC=500mW. Complements the 2SA1201. APPLICATIONS Power and voltage amplifier application.

Power transistor for high-speed switching applications

Application Scope：Audio drivers\nPolarity：NPN\nComplementary Product：2SA1201\nComments：Rank is specified by hFE range.\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 0.8 A \nCollector power dissipation (mounted on ceramic board (250mm**2, t0.8mm)) PC 1 W \nCollector-emitter voltage VCEO 120 V ;

Silicon NPN transistor in a SOT-89 Plastic Package

Descriptions Silicon NPN transistor in a SOT-89 Plastic Package. Features High fT, high VCEO, small flat package, complementary pair with 2SA1201A. Applications Power amplifier applications.

丝印代码：C；Voltage Amplifier Applications

Features • High Voltage : VCEO = 120V • High Transition Frequency : fT = 120MHz(typ.) • Small Flat Package • Complementary to 2SA1201

丝印代码：CO*；NPN Transistors

■ Features ● Small Flat Package ● High Transition Frequency ● High Voltage ● Complementary to 2SA1201

NPN Silicon Power Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • With SOT-89 package • Power amplifier applications • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix

丝印代码：C；Voltage Amplifier Applications

Features • High Voltage : VCEO = 120V • High Transition Frequency : fT = 120MHz(typ.) • Small Flat Package • Complementary to 2SA1201

丝印代码：CY*；NPN Transistors

■ Features ● Small Flat Package ● High Transition Frequency ● High Voltage ● Complementary to 2SA1201

NPN Silicon Power Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • With SOT-89 package • Power amplifier applications • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix

TRANSISTOR (POWER, VOLTAGE AMPLIFIER APPLICATIONS)

Power Amplifier Applications Voltage Amplifier Applications ● Suitable for driver of 30 to 35 watts audio amplifier ● Small flat package ● PC = 1.0 to 2.0 W (mounted on ceramic substrate) ● Complementary to 2SA1202

Power Amplifier Applications

■ Features ● Suitable for driver of 30 to 35 watts audio amplifier ● Small flat package ● PC = 1.0 to 2.0 W (mounted on a ceramic substrate) ● Complementary to 2SA1202

Power Amplifier Applications

Power Amplifier Applications Voltage Amplifier Applications ● Suitable for driver of 30 to 35 watts audio amplifier ● Small flat package ● PC = 1.0 to 2.0 W (mounted on ceramic substrate) ● Complementary to 2SA1202

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power Amplifier Applications

Power Amplifier Applications Voltage Amplifier Applications ● Suitable for driver of 30 to 35 watts audio amplifier ● Small flat package ● PC = 1.0 to 2.0 W (mounted on ceramic substrate) ● Complementary to 2SA1202

Plastic-Encapsulate Transistors

FEATURES • Low voltage

NPN Silicon Epitaxial Planar Transistor

FEATURES ● Suitable for output stage of 3 watts amplifier. ● Small flat package. ● PC=1.0 to 2.0W. ● Complements the 2SA1203.

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

丝印代码：GO；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Low voltage

NPN General Purpose Transistor

Features « Supply line switching circuits | + DC/DC converter applications | o Battery management applications

Low voltage

FEATURES • Low voltage

NPN-General use transistor

NPN-General use transistor 1W 、1.5A、30V Applications： Can be used for switching and amplifying in various electrical and electronic equipments

Audio Frequency Amplifier Applications

Features ● Suitable For Output Stage of 3 Watts Amplifier ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SA1203

TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APLICATIONS)

Audio Frequency Amplifier Applications • Suitable for output stage of 3 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1203

NPN Plastic-Encapsulate Transistor

1.5 A , 30 V NPN Plastic-Encapsulate Transistor FEATURES • Low Voltage.

TRANSISTOR(NPN)

TRANSISTOR (NPN) FEATURES Low voltage

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Low voltage

NPN Silicon Power Transistors

Features • Halogen free available upon request by adding suffix -HF • Power amplifier applications • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

NPN Silicon Power Transistors

Features • Halogen free available upon request by adding suffix -HF • Power amplifier applications • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

Audio Frequency Amplifier Applications

■ Features ● Suitable for output stage of 1 watts amplifier ● Small flat package ● PC = 1.0 to 2.0 W (mounted on a ceramic substrate) ● Complementary to 2SA1204

TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS)

Audio Frequency Amplifier Applications • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1204

TRANSISTOR(NPN)

FEATURES ● Small Flat Package ● Complementary to 2SA1204 ● High DC Current Gain APPLICATIONS ● Audio Frequency Amplifier

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Small Flat Package ● Complementary to 2SA1204 ● High DC Current Gain APPLICATIONS ● Audio Frequency Amplifier

Silicon PNP transistor in a SOT-89 Plastic Package

Descriptions Silicon NPN transistor in a SOT-89 Plastic Package. Features High hFE, for out stage of 1 watts amplifier, complementary to 2SA1204. Applications Audio frequency amplifier applications

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: 0.8 A Collector-base voltage V(BR)CBO: 35 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Plastic-Encapsulate Transistors

FEATURES • Suitable for output stage of 3 watts amplifier. • High DC current gain. • Small flat package. • PC=1.0 to 2.0W. • Complements the 2SA1204.

NPN Epitaxial Planar Transistor

FEATURES ● Small Flat Package ● Complementary to 2SA1204 ● High DC Current Gain

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

丝印代码：PO1；NPN Silicon Epitaxial Planar Transistor

FEATURES Suitable for output stage of 1 watts amplifier. High DC current gain. Small flat package. PC=1.0 to 2.0W. Complements the 2SA1204.

Suitable for output stage of 3 watts amplifier.

FEATURES • Suitable for output stage of 3 watts amplifier. • High DC current gain. • Small flat package. • PC=1.0 to 2.0W. • Complements the 2SA1204.

Audio Frequency Amplifier Applications

Audio Frequency Amplifier Applications • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1204

NPN Silicon Epitaxial Planar Transistor

FEATURES ● Suitable for output stage of 1 watts amplifier. ● High DC current gain. ● Small flat package. ● PC=1.0 to 2.0W. ● Complements the 2SA1204.

NPN Epitaxial Planar Transistor

FEATURES ● Small Flat Package ● Complementary to 2SA1204 ● High DC Current Gain

NPN-General use transistor

NPN-General use transistor 1W 、1.5A、25V Applications： Can be used for switching and amplifying in various electrical and electronic equipments

Audio Frequency Amplifier Applications

Audio Frequency Amplifier Applications • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1204

NPN Epitaxial Planar Transistor

FEATURES ● Small Flat Package ● Complementary to 2SA1204 ● High DC Current Gain