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2SC288晶体管资料

  • 2SC288别名：2SC288三极管、2SC288晶体管、2SC288晶体三极管

  • 2SC288生产厂家：日本日电公司

  • 2SC288制作材料：Si-NPN

  • 2SC288性质：超高频/特高频 （UHF）

  • 2SC288封装形式：贴片封装

  • 2SC288极限工作电压：30V

  • 2SC288最大电流允许值：0.02A

  • 2SC288最大工作频率：1.1GHZ

  • 2SC288引脚数：3

  • 2SC288最大耗散功率：

  • 2SC288放大倍数：

  • 2SC288图片代号：G-22

  • 2SC288vtest：30

  • 2SC288htest：1100000000

  • 2SC288atest：0.02

  • 2SC288wtest：0

  • 2SC288代换 2SC288用什么型号代替：BF180,BF362,BF363,BF357,BF377,3DG103D,

型号 功能描述 生产厂家&企业 LOGO 操作
2SC2880

TRANSISTOR(HIGHVOLTAGESWITCHINGAPPLICATIONS)

HighVoltageSwitchingApplications Highvoltage:VCEO=150V Hightransitionfrequency:fT=120MHz Smallflatpackage PC=1.0to2.0W(mountedonceramicsubstrate) Complementaryto2SA1200

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC2880

HighVoltageSwitchingApplications

■Features ●HighVoltage:VCEO=150V ●HighTransitionFrequency ●SmallFlatPackage ●Complementaryto2SA1200

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SC2881

VOLTAGEAMPLIFIERAPPLICATIONSPOWERAMPLIFIERAPPLICATIONS

VOLTAGEAMPLIFIER APPLICATIONSPOWER AMPLIFIERAPPLICATIONS FEATURES *Highvoltage:VCEO=120V *Hightransitionfrequency:fT=120MHz(typ.) *Complementaryto2SA1201

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SC2881

TRANSISTOR(POWERAMPLIFIERAPPLICATIONS)

VoltageAmplifierApplications PowerAmplifierApplications •Highvoltage:VCEO=120V •Hightransitionfrequency:fT=120MHz(typ.) •Smallflatpackage •PC=1.0to2.0W(mountedonceramicsubstrate) •Complementaryto2SA1201

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC2881

VoltageAmplifierApplications

Features ●HighVoltage:VCEO=120V ●HighTransitionFrequency:fT=120MHz(typ.) ●SmallFlatPackage ●Complementaryto2SA1201

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SC2881

TRANSISTOR(NPN)

FEATURES ●SmallFlatPackage ●HighTransitionFrequency ●HighVoltage ●Complementaryto2SA1201 APPLICATIONS ●PowerAmplifierandVoltageAmplifier VCBOCollector-BaseVoltage120V VCEOCollector-EmitterVoltage120V VEBOEmitter-BaseVoltage5V ICCollectorCurrent800mA PCCo

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI
2SC2881

NPNTransistors

■Features ●SmallFlatPackage ●HighTransitionFrequency ●HighVoltage ●Complementaryto2SA1201

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
2SC2881

SOT-89-3LPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●SmallFlatPackage ●HighTransitionFrequency ●HighVoltage ●Complementaryto2SA1201 APPLICATIONS ●PowerAmplifierandVoltageAmplifier

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU
2SC2881

Plastic-EncapsulateTransistors

FEATURES •Highvoltage:VCEO=120V •Hightransitionfrequency;fT=120MHz. •PC=500mW. •Complementsthe2SA1201

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰电子有限公司

HOTTECH
2SC2881

VoltageAmplifierApplications

Features •HighVoltage:VCEO=120V •HighTransitionFrequency:fT=120MHz(typ.) •SmallFlatPackage •Complementaryto2SA1201

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY
2SC2881

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●Highvoltage:VCEO=120V ●Hightransitionfrequency;fT=120MHz. ●PC=500mW. ●Complementsthe2SA1201. APPLICATIONS ●Powerandvoltageamplifierapplication.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
2SC2881

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:500mW(Tamb=25℃) Collectorcurrent ICM:800mA Collector-basevoltage V(BR)CBO:120V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
2SC2881

SOT-89Plastic-EncapsulateTransistors

FEATURES ●SmallFlatPackage ●HighTransitionFrequency ●HighVoltage APPLICATIONS ●PowerAmplifierandVoltageAmplifier

WILLASWILLAS ELECTRONIC CORP

威伦威伦电子股份有限公司

WILLAS
2SC2881

SiliconNPNtransistorinaSOT-89PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-89PlasticPackage. Features SiliconNPNtransistorinaSOT-89PlasticPackage. Applications Poweramplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2SC2881

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC2881

NPNSiliconEpitaxialPlanarTransistor

FEATURES Highvoltage:VCEO=120V Hightransitionfrequency;fT=120MHz. PC=500mW. Complementsthe2SA1201. APPLICATIONS Powerandvoltageamplifierapplication.

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SC2881A

SiliconNPNtransistorinaSOT-89PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-89PlasticPackage. Features HighfT,highVCEO,smallflatpackage,complementarypairwith2SA1201A. Applications Poweramplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2SC2881O

VoltageAmplifierApplications

Features •HighVoltage:VCEO=120V •HighTransitionFrequency:fT=120MHz(typ.) •SmallFlatPackage •Complementaryto2SA1201

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY
2SC2881-O

NPNTransistors

■Features ●SmallFlatPackage ●HighTransitionFrequency ●HighVoltage ●Complementaryto2SA1201

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
2SC2881-O

NPNSiliconPowerTransistors

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •WithSOT-89package •Poweramplifierapplications •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableuponrequestbyaddingsuffix

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
2SC2881Y

VoltageAmplifierApplications

Features •HighVoltage:VCEO=120V •HighTransitionFrequency:fT=120MHz(typ.) •SmallFlatPackage •Complementaryto2SA1201

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY
2SC2881-Y

NPNTransistors

■Features ●SmallFlatPackage ●HighTransitionFrequency ●HighVoltage ●Complementaryto2SA1201

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
2SC2881-Y

NPNSiliconPowerTransistors

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •WithSOT-89package •Poweramplifierapplications •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableuponrequestbyaddingsuffix

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
2SC2882

TRANSISTOR(POWER,VOLTAGEAMPLIFIERAPPLICATIONS)

PowerAmplifierApplications VoltageAmplifierApplications ●Suitablefordriverof30to35wattsaudioamplifier ●Smallflatpackage ●PC=1.0to2.0W(mountedonceramicsubstrate) ●Complementaryto2SA1202

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC2882

PowerAmplifierApplications

■Features ●Suitablefordriverof30to35wattsaudioamplifier ●Smallflatpackage ●PC=1.0to2.0W(mountedonaceramicsubstrate) ●Complementaryto2SA1202

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SC2882

PowerAmplifierApplications

PowerAmplifierApplications VoltageAmplifierApplications ●Suitablefordriverof30to35wattsaudioamplifier ●Smallflatpackage ●PC=1.0to2.0W(mountedonceramicsubstrate) ●Complementaryto2SA1202

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC2882

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC2882-Y

PowerAmplifierApplications

PowerAmplifierApplications VoltageAmplifierApplications ●Suitablefordriverof30to35wattsaudioamplifier ●Smallflatpackage ●PC=1.0to2.0W(mountedonceramicsubstrate) ●Complementaryto2SA1202

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC2883

Plastic-EncapsulateTransistors

FEATURES •Lowvoltage

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰电子有限公司

HOTTECH
2SC2883

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC2883

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●Suitableforoutputstageof3wattsamplifier. ●Smallflatpackage. ●PC=1.0to2.0W. ●Complementsthe2SA1203.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
2SC2883

SOT-89-3LPlastic-EncapsulateTransistors

FEATURES Lowvoltage

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SC2883

Lowvoltage

FEATURES •Lowvoltage

MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED

美科半导体美科半导体股份（香港）有限公司

MAKOSEMI
2SC2883

NPN-Generalusetransistor

NPN-Generalusetransistor 1W、1.5A、30V Applications： Canbeusedforswitchingandamplifyinginvariouselectricaland electronicequipments

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY
2SC2883

AudioFrequencyAmplifierApplications

Features ●SuitableForOutputStageof3WattsAmplifier ●SmallFlatPackage ●PC=1to2W(mountedonceramicsubstrate) ●Complementaryto2SA1203

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SC2883

TRANSISTOR(AUDIOFREQUENCYAMPLIFIERAPLICATIONS)

AudioFrequencyAmplifierApplications •Suitableforoutputstageof3wattsamplifier •Smallflatpackage •PC=1.0to2.0W(mountedonaceramicsubstrate) •Complementaryto2SA1203

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC2883

NPNPlastic-EncapsulateTransistor

1.5A,30VNPNPlastic-EncapsulateTransistor FEATURES •LowVoltage.

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
2SC2883

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES Lowvoltage

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI
2SC2883

SOT-89-3LPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES Lowvoltage

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU
2SC2883-O

NPNSiliconPowerTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •Poweramplifierapplications •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
2SC2883-Y

NPNSiliconPowerTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •Poweramplifierapplications •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
2SC2884

AudioFrequencyAmplifierApplications

■Features ●Suitableforoutputstageof1wattsamplifier ●Smallflatpackage ●PC=1.0to2.0W(mountedonaceramicsubstrate) ●Complementaryto2SA1204

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SC2884

TRANSISTOR(AUDIOFREQUENCYAMPLIFIERAPPLICATIONS)

AudioFrequencyAmplifierApplications •HighDCcurrentgain:hFE=100to320 •Suitableforoutputstageof1wattsamplifier •Smallflatpackage •PC=1.0to2.0W(mountedonaceramicsubstrate) •Complementaryto2SA1204

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC2884

TRANSISTOR(NPN)

FEATURES ●SmallFlatPackage ●Complementaryto2SA1204 ●HighDCCurrentGain APPLICATIONS ●AudioFrequencyAmplifier

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI
2SC2884

SOT-89-3LPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●SmallFlatPackage ●Complementaryto2SA1204 ●HighDCCurrentGain APPLICATIONS ●AudioFrequencyAmplifier

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU
2SC2884

SiliconPNPtransistorinaSOT-89PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-89PlasticPackage. Features HighhFE,foroutstageof1wattsamplifier,complementaryto2SA1204. Applications Audiofrequencyamplifierapplications

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2SC2884

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:0.5W(Tamb=25℃) Collectorcurrent ICM:0.8A Collector-basevoltage V(BR)CBO:35V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
2SC2884

Plastic-EncapsulateTransistors

FEATURES •Suitableforoutputstageof3wattsamplifier. •HighDCcurrentgain. •Smallflatpackage. •PC=1.0to2.0W. •Complementsthe2SA1204.

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰电子有限公司

HOTTECH
2SC2884

NPNEpitaxialPlanarTransistor

FEATURES ●SmallFlatPackage ●Complementaryto2SA1204 ●HighDCCurrentGain

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
2SC2884

AudioFrequencyAmplifierApplications

AudioFrequencyAmplifierApplications •HighDCcurrentgain:hFE=100to320 •Suitableforoutputstageof1wattsamplifier •Smallflatpackage •PC=1.0to2.0W(mountedonaceramicsubstrate) •Complementaryto2SA1204

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC2884

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●Suitableforoutputstageof1wattsamplifier. ●HighDCcurrentgain. ●Smallflatpackage. ●PC=1.0to2.0W. ●Complementsthe2SA1204.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
2SC2884

Suitableforoutputstageof3wattsamplifier.

FEATURES •Suitableforoutputstageof3wattsamplifier. •HighDCcurrentgain. •Smallflatpackage. •PC=1.0to2.0W. •Complementsthe2SA1204.

MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED

美科半导体美科半导体股份（香港）有限公司

MAKOSEMI
2SC2884

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC2884

NPNSiliconEpitaxialPlanarTransistor

FEATURES Suitableforoutputstageof1watts amplifier. HighDCcurrentgain. Smallflatpackage. PC=1.0to2.0W. Complementsthe2SA1204.

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SC2884-O

NPNEpitaxialPlanarTransistor

FEATURES ●SmallFlatPackage ●Complementaryto2SA1204 ●HighDCCurrentGain

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
2SC2884Y

NPN-Generalusetransistor

NPN-Generalusetransistor 1W、1.5A、25V Applications： Canbeusedforswitchingandamplifyinginvariouselectricaland electronicequipments

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY
2SC2884-Y

AudioFrequencyAmplifierApplications

AudioFrequencyAmplifierApplications •HighDCcurrentgain:hFE=100to320 •Suitableforoutputstageof1wattsamplifier •Smallflatpackage •PC=1.0to2.0W(mountedonaceramicsubstrate) •Complementaryto2SA1204

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC2884-Y

NPNEpitaxialPlanarTransistor

FEATURES ●SmallFlatPackage ●Complementaryto2SA1204 ●HighDCCurrentGain

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
2SC2885

SILICONPOWERTRANSISTOR

NPNSILICONEPITAXIALTRANSISTOR FORHIGH-VOLTAGEHIGH-SPEEDSWITCHING

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SC2885

NPNSILICONEPITAXIALTRANSISTORFORHIGH-VOLTAGEHIGH-SPEEDSWITCHING

NPNSILICONEPITAXIALTRANSISTORFORHIGH-VOLTAGEHIGH-SPEEDSWITCHING The2SC2885,2946,and2946(1)arehigh-voltagehigh-speedswitchingpowertransistorsfeaturingasmallpackage(MP-3)whichissuitableforhigh-densitymounting.ThesetransistorsareidealfordriversinDC/DCconvertersa

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

2SC288产品属性

  • 类型

    描述

  • 型号

    2SC288

  • 制造商

    Toshiba America Electronic Components

  • 功能描述

    TRANS GP BJT NPN - Tape and Reel

2SC288供应商更多...

更新时间：2025-7-5 10:41:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市安富世纪电子有限公司
2SC2882-Y
TOSHIBA
23+
SOT-89
50000
全新原装正品现货,支持订货
询价
深圳市盈慧通电子有限公司
2SC2882
TOSHIBA/东芝
2511
SOT-89
360000
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
询价
深圳市创新迹电子有限公司
2SC2882/EY
TOSHIBA/东芝
2023+
8700
原装现货
询价
深圳市旺财半导体有限公司
2SC2882
TOS
23+
TO
20000
正品原装货价格低
询价
深圳市宇创芯科技有限公司
2SC2882-Y
TOSHIBA/东芝
24+
SOT-89
9600
原装现货,优势供应,支持实单!
询价
深圳市英科美电子有限公司
2SC2882
NEC
2223+
SOT89
26800
只做原装正品假一赔十为客户做到零风险
询价
中天科工半导体（深圳）有限公司
2SC2882-Y
TOSHIBA/东芝
20+
SOT-89
43000
原装优势主营型号-可开原型号增税票
询价
深圳市汇莱威科技有限公司
2SC2882-Y
TOSHIBA/东芝
2024
SOT-89
503175
16余年资质 绝对原盒原盘代理渠道 更多数量
询价
瀚佳科技(深圳)有限公司
2SC2882-Y
TOS
24+
SOT89
65200
一级代理/放心采购
询价
深圳市莱克讯科技有限公司
2SC2882-Y
TOSHIBA
1922+
SOT-89
12596
原装进口现货库存专业工厂研究所配单供货
询价

2SC288芯片相关品牌

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2SC288规格书下载地址

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