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2SC28晶体管资料
2SC28别名:2SC28三极管、2SC28晶体管、2SC28晶体三极管
2SC28生产厂家:日本富士通公司
2SC28制作材料:Si-NPN
2SC28性质:通用型 (Uni)
2SC28封装形式:直插封装
2SC28极限工作电压:40V
2SC28最大电流允许值:0.05A
2SC28最大工作频率:100MHZ
2SC28引脚数:3
2SC28最大耗散功率:0.225W
2SC28放大倍数:
2SC28图片代号:D-9
2SC28vtest:40
2SC28htest:100000000
- 2SC28atest:0.05
2SC28wtest:0.225
2SC28代换 2SC28用什么型号代替:BC107,BC167,BC171,BC182,BC183,BC207,BC237,BC547,3DG110B,
2SC28价格
参考价格:¥0.2983
型号:2SC2812N6-TB-E 品牌:ON 备注:这里有2SC28多少钱,2025年最近7天走势,今日出价,今日竞价,2SC28批发/采购报价,2SC28行情走势销售排行榜,2SC28报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TRANSISTOR 3SK121 datasheet pdf | TOSHIBA 东芝 | |||
TRANSISTOR 3SK121 datasheet pdf | TOSHIBA 东芝 | |||
TRANSISTOR 3SK121 datasheet pdf | TOSHIBA 东芝 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • High speed switching • High breakdown voltage • Wide area of safe operation APPLICATIONS • For power amplifier applications | SAVANTIC | |||
High-Friquency General-Purpose Amplifier Applications Features • Ultrasmall package enabiling compactness and slimness of sets. • High fT and small cre (fT=320MHz typ, cre=0.95pF typ). | ONSEMI 安森美半导体 | |||
Silicon NPN Power Transistors DESCRIPTION With TO-220C package ·High voltage,High speed APPLICATIONS ·For power switching applications | SAVANTIC | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage,High speed APPLICATIONS ·For power switching applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors * With TO-220C package * High voltage,High speed * For power switching applications | JMNIC 锦美电子 | |||
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO= 50V(Min.) ·High Reliability ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil drive | ISC 无锡固电 | |||
2SA1179 PNP/NPN Transistor Low-Frequency General-Purpose Amplifier Applications Features • Miniature package facilitates miniaturization in end products. • High breakdown voltage. | SANYO 三洋 | |||
2SA1179N PNP / NPN Epitaxial Planar Silicon Transistor Features • Miniature package facilitates miniaturization in end products • High breakdown voltage | SANYO 三洋 | |||
High-Frequency General-Purpose Amp Applications??? High-Friquency General-Purpose Amplifier Applications Features • Very small package enabiling compactness and slimness of sets. • High fT and small cre (fT=320MHz typ, cre=0.95pF typ). | SANYO 三洋 | |||
High-Friquency General-Purpose Amplifier Applications Features • Ultrasmall package enabiling compactness and slimness of sets. • High fT and small cre (fT=320MHz typ, cre=0.95pF typ). | ONSEMI 安森美半导体 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • High voltage;high speed • Low collector saturation voltage APPLICATIONS • For use in horizontal deflection output stages of TV’s and CTV’s circuits | ISC 无锡固电 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • High voltage;high speed • Low collector saturation voltage APPLICATIONS • For use in horizontal deflection output stages of TV’s and CTV’s circuits | SAVANTIC | |||
Silicon NPN Power Transistor DESCRIPTION • High Collector-Emitter Sustaining Voltage- : VCEO(sus)= 400V(Min) • High Switching Speed • High Reliability APPLICATIONS • Designed for high voltage, high speed and high power applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • High voltage • High speed APPLICATIONS • For high voltage ,high speed and high power switching applications | SAVANTIC | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • High voltage • High speed APPLICATIONS • For high voltage ,high speed and high power switching applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • High voltage • High speed APPLICATIONS • For high voltage ,high speed and high power switching applications | JMNIC 锦美电子 | |||
Silicon NPN Triple Diffused Application High voltage, high speed and high power switching | HitachiHitachi Semiconductor 日立日立公司 | |||
Power Bipolar Transistors
| ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Power Bipolar Transistors
| ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Power Bipolar Transistors
| ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Power Bipolar Transistors
| ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Power Bipolar Transistors
| ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Power Bipolar Transistors
| ETCList of Unclassifed Manufacturers 未分类制造商 | |||
SILICON NPN EPITAXIAL TYPE(PCT PROCESS) SILICON NPN EPITAXIAL TYPE (PCT PORCESS) AUDIO FREQUENCY POWERE AMPLIFIER APPLICATIONS. | TOSHIBA 东芝 | |||
POWER TRANSISTORS(3.0A,400V,40W) 3.0 AMPERE SILICON POWER TRANSISTORS 400 VOLTS 40 WATTS | MOSPEC 统懋 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • High breakdown voltage • Fast switching speed. • Wide area of safe operation APPLICATIONS • 400V/7A switching regulator applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • High breakdown voltage • Fast switching speed. • Wide area of safe operation APPLICATIONS • 400V/7A switching regulator applications | SAVANTIC | |||
Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) • Fast Switching Speed • Collector-Emitter Saturation Voltage- : VCE(sat)= 0.7V(Max.)@ lc= 3A APPLICATIONS • Designed for use in high-voltage,high-speed,power switching applications such as switching regulators, invert | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage ,high speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications | SAVANTIC | |||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage ,high speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage ,high speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications | JMNIC 锦美电子 | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·High VCBO ·High speed switching APPLICATIONS ·For high speed switching applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·High VCBO ·High speed switching APPLICATIONS ·For high speed switching applications | SAVANTIC | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·High VCBO ·High speed switching APPLICATIONS ·For high speed switching applications | SAVANTIC | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·High VCBO ·High speed switching APPLICATIONS ·For high speed switching applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • Low collector saturation voltage • High VCBO • High speed switching APPLICATIONS • For high speed switching applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • Low collector saturation voltage • High VCBO • High speed switching APPLICATIONS • For high speed switching applications | JMNIC 锦美电子 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • Low collector saturation voltage • High VCBO • High speed switching APPLICATIONS • For high speed switching applications | SAVANTIC | |||
Si NPN Triple Diffused Junction Mesa High Speed Switching Features • High speed switching • High VCBO • Low VCE(sat) | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Si NPN Triple Diffused Junction Mesa High Speed Switching Features • High speed switching • High VCBO • Low VCE(sat) | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • Low collector saturation voltage • High VCBO • High speed switching APPLICATIONS • For high speed switching applications | SAVANTIC | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • Low collector saturation voltage • High VCBO • High speed switching APPLICATIONS • For high speed switching applications | JMNIC 锦美电子 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • Low collector saturation voltage • High VCBO • High speed switching APPLICATIONS • For high speed switching applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • High speed switching • High VCBO • Low collector saturation voltage APPLICATIONS • For high speed switching applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • High speed switching • High VCBO • Low collector saturation voltage APPLICATIONS • For high speed switching applications | SAVANTIC | |||
Si NPN Triple Diffused Junction Mesa High Speed Switching Features • High speed switching • High VCBO • Low VCE(sat) | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Si NPN Triple Diffused Junction Mesa High Speed Switching Features • High speed switching • High VCBO • Low VCE(sat) | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • High speed switching • High VCBO • Low collector saturation voltage APPLICATIONS • For high speed switching applications | SAVANTIC | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • High speed switching • High VCBO • Low collector saturation voltage APPLICATIONS • For high speed switching applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • High speed switching • High VCBO • Low collector saturation voltage APPLICATIONS • For high speed switching applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • High speed switching • High VCBO • Low collector saturation voltage APPLICATIONS • For high speed switching applications | SAVANTIC | |||
Silicon NPN Power Transistor DESCRIPTION • High Breakdown Voltage- : V(BR)CBO= 800V(Min) • High Switching Speed • Low Collector Saturation Voltage APPLICATIONS • Designed for high speed switching applications, | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon NPN Triple-Diffused Junction Mesa Type Silicon NPN Triple-Diffused Junction Mesa Type High Breakdown Voltage, High Speed Switching | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • High speed switching • High VCBO • Low collector saturation voltage APPLICATIONS • For high speed switching applications | SAVANTIC | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • High speed switching • High VCBO • Low collector saturation voltage APPLICATIONS • For high speed switching applications | ISC 无锡固电 | |||
Silicon NPN Triple-Diffused Junction Mesa Type Silicon NPN Triple-Diffused Junction Mesa Type High Breakdown Voltage, High Speed Switching | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Silicon NPN Epitaxial Planar Transistor(Audio and General Purpose) Application : Audio and General Purpose Complement to type 2SA1186(PNP) | Sanken 三垦 |
2SC28产品属性
- 类型
描述
- 型号
2SC28
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY SANYO TRANS. SC-5955V .15A .2W ECB SURFACE MT
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHI |
24+ |
TO-59 |
300 |
价格优势 |
|||
XDY |
24+ |
NA/ |
12 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
日立 |
22+ |
TO-251 |
20000 |
公司只有原装 品质保证 |
|||
TOSHIBA/东芝 |
21+ |
SOT89 |
1062 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
TOSHIBA |
23+ |
高频管 |
280 |
专营高频管模块,全新原装! |
|||
TOSHIBA/东芝 |
21+ |
SOT-89 |
33200 |
优势供应 实单必成 可13点增值税 |
|||
SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
长电 |
25+23+ |
SOT-89 |
24550 |
绝对原装正品全新进口深圳现货 |
|||
XDY |
23+ |
TO-3 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
NEC |
24+ |
600 |
2SC28芯片相关品牌
2SC28规格书下载地址
2SC28参数引脚图相关
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2SC28数据表相关新闻
2SC1815L-TO92K-Y-TG_UTC代理商
2SC1815L-TO92K-Y-TG_UTC代理商
2023-2-152SC2712G-SOT23.3R-Y-TG
2SC2712G-SOT23.3R-Y-TG
2023-1-312SC3356
2SC3356,全新原装现货0755-82732291当天发货或门市自取. QQ:1755232575 /QQ:1157611585,微信号:87680558.
2021-3-232SC3671-B,T2F(J
产品属性 属性值 搜索类似 制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors
2020-11-52SC2334中文资料
2SC2334中文资料
2019-2-182SC2859中文资料
2SC2859中文资料
2019-2-18
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