TRANSISTOR

DESCRIPTION NPN Epitaxial planar Silicon Transistor FEATURES High power gain: Gpe=27dB(f=10.7MHz) Recommended for FM IF,OSC Stage and AM CONV.IF Stage APPLICATION High Frequency amplifier For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,DVD-ROM, Note book PC, etc.)

Silicon NPN Epitaxial

Features ● High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz). ● Recommended for FM IF, OSC stage and AM CONV. IF stage.

TRANSISTOR (HIGH FREQUENCY AMPLIFIER APPLICATIONS)

High Frequency Amplifier Applications • High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) • Recommended for FM IF, OSC stage and AM CONV. IF stage.

Silicon Epitaxial Planar Transistor

FEATURES • Power dissipation. APPLICATIONS • Audio frequency general purpose amplifier applications.

Silicon NPN Epitaxial Planar Type (PCT process)

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NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications for FM IF, OSC stage and AM CONV. IF stage The transistor is subdivided into three groups, R, O and Y, according to its DC current gain.