NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR)?

DESCRIPTION 2SC2630 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. APPLICATION 40 to 60 watts output power amplifiers in VHF band mobile radio applications.

Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)

For low-frequency high breakdown voltage amplification Complementary to 2SA1123 ■Features ● Satisfactory linearity of forward current transfer ratio hFE. ● High collector to emitter voltage VCEO. ● Small collector output capacitance Cob .

Silicon PNP epitaxial planer type

For low-frequency high breakdown voltage amplification Complementary to 2SC2631 ■Features ● Satisfactory foward current transfer ratio hFE collector current IC characteristics. ● High collector to emitter voltage VCEO. ● Small collector output capacitance Cob. ● Makes up a comp

Silicon NPN epitaxial planer type

For low-frequency high breakdown voltage amplification\nComplementary to 2SA1123■ ● Satisfactory linearity of forward current transfer ratio hFE.\n● High collector to emitter voltage VCEO.\n● Small collector output capacitance Cob\n.;

Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)

Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1124 ■ Features ● Satisfactory linearity of forward current transfer ratio hFE. ● High collector to emitter voltage VCEO. ● Small collector output capacitance Cob.

Silicon NPN Epitaxial Planar TVpe

Features Good linearity of DC current gain (hre) High collector-emitter voltage (Vcgo) Small collector output capacitance (Co)

Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)

For low-frequency and low-noise amplification Complementary to 2SA1127 ■Features •Low noise voltage NV •High forward current transfer ratio hFE

SI NPN EPITAXIAL PLANAR

AF Power Amplifier For Strobo, Converter Features Low collector-emitter saturation voltage (VCE(sat)) High performance and good operating characteristics at low supply voltage

Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation)

Silicon NPN epitaxial planar type For high-frequency amplification/oscillation ■ Features ● High transition frequency fT. ● M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

TRANSISTOR (VHF BAND POWER AMPLIFIER APPLICATIONS)

VHF BAND POWER AMPLIFIER APPLICATIONS

TRANSISTOR (VHF BAND POWER AMPLIFIER APPLICATIONS)

VHF BAND POWER AMPLIFIER APPLICATIONS • Output Power : P0=15W (Min.) (f=175MHz, VCC=12.5V, Pi=1.3W)

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 150V 0.05A TO92-B1 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

双极晶体管

Silicon NPN transistor in a TO-92LM Plastic Package

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封装/外壳：TO-226-3，TO-92-3 长体 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 150V 0.05A TO92L-A1 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others