2SC26晶体管资料

  • 2SC26别名:2SC26三极管、2SC26晶体管、2SC26晶体三极管

  • 2SC26生产厂家:日本富士通公司

  • 2SC26制作材料:Si-NPN

  • 2SC26性质:通用型 (Uni)

  • 2SC26封装形式:直插封装

  • 2SC26极限工作电压:60V

  • 2SC26最大电流允许值:0.1A

  • 2SC26最大工作频率:150MHZ

  • 2SC26引脚数:3

  • 2SC26最大耗散功率:0.5W

  • 2SC26放大倍数

  • 2SC26图片代号:D-9

  • 2SC26vtest:60

  • 2SC26htest:150000000

  • 2SC26atest:0.1

  • 2SC26wtest:0.5

  • 2SC26代换 2SC26用什么型号代替:BC174,BC182,BC190,BC546,3DG120C,

2SC26价格

参考价格:¥0.9099

型号:2SC2655-Y(TE6,F,M) 品牌:Toshiba 备注:这里有2SC26多少钱,2025年最近7天走势,今日出价,今日竞价,2SC26批发/采购报价,2SC26行情走势销售排行榜,2SC26报价。
型号 功能描述 生产厂家 企业 LOGO 操作

NPN SILICON TRANSISTOR

MICRO-ELECTRONICS

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2SA1117 ·High power dissipation APPLICATIONS ·For power amplifier applications

SAVANTIC

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2SA1117 ·High power dissipation APPLICATIONS ·For power amplifier applications

ISC

无锡固电

MINI PACKAGE SERIES

Application General Purpose > Low Noise High Voltage High Current High Current Low Impedance Low Noise (NEW Audio Drive & Out NEW High B Muting & SW FM RF, MIX OSC AM CONV. FM/AM IF AM FF, CONV IF FM/AM RF, MIX OSC Application General Purpose High IYfsl Low Noise Analog SW & Ge

TOSHIBA

东芝

Silicon NPN Triple Diffused

Application • High voltage amplifier • TV Video output

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN Triple Diffused

Application High voltage amplifier TV VIDEO output

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN Triple Diffused

Application High voltage, high speed and high power switching

HitachiHitachi Semiconductor

日立日立公司

Power Bipolar Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • High collector breakdown voltage : VCEO=400V(Min) APPLICATIONS • For high voltage ,high speed and high power switching applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • High collector breakdown voltage : VCEO=400V(Min) APPLICATIONS • For high voltage ,high speed and high power switching applications

SAVANTIC

Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Sustaining Voltage- : VCECHSUSP 400V(Min) • Good Linearity of hFE • Low Saturation Voltage APPLICATIONS • Designed for high voltage, high speed and high power switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • High collector breakdown voltage : VCEO=400V(Min) APPLICATIONS • For high voltage ,high speed and high power switching applications

SAVANTIC

Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) • Good Linearity of hFe • Low Saturation Voltage APPLICATIONS • Designed for high voltage, high speed and high power switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • High collector breakdown voltage : VCEO=400V(Min) APPLICATIONS • For high voltage ,high speed and high power switching applications

ISC

无锡固电

Power Bipolar Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Triple Diffused

Application High voltage, high speed and high power switching

HitachiHitachi Semiconductor

日立日立公司

HIGH VOLTAGE, HIGH SPEED AND HIGH POWER SWITCHING

SILICON NPN TRIPLE DIFFUSED HIGH VOLTAGE, HIGH SPEED AND HIGH POWER SWITCHING

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-247 package ·High voltage,high speed APPLICATIONS ·For high voltage,high speed and high power switching applications

ISC

无锡固电

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION · With TO-247 package ·High voltage,high speed APPLICATIONS ·For high voltage,high speed and high power switching applications

SAVANTIC

HIGH VOLTAGE, HIGH SPEED AND HIGH POWER SWITCHING

SILICON NPN TRIPLE DIFFUSED

ETCList of Unclassifed Manufacturers

未分类制造商

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Designed for high voltage, high speed and high power switching applications.

ISC

无锡固电

Silicon NPN Epitaxial

Features ● Low frequency amplifier.

KEXIN

科信电子

Silicon NPN Epitaxial

Application • Low frequency amplifier • Complementary pair with 2SA1121

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Application High frequency amplifier

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Features ● High frequency amplifier.

KEXIN

科信电子

Silicon NPN Epitaxial Planar

Application VHF amplifier, Local oscillator

HitachiHitachi Semiconductor

日立日立公司

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR Color TV Chroma Output Applications

ETCList of Unclassifed Manufacturers

未分类制造商

High speed switching transistor

[COLLMER SEMICONDUCTOR] High speed switching transistor

ETCList of Unclassifed Manufacturers

未分类制造商

Power Bipolar Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

High speed switching transistor

[COLLMER SEMICONDUCTOR] High speed switching transistor

ETCList of Unclassifed Manufacturers

未分类制造商

isc Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • High Switching Speed • High Reliability APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • High Switching Speed • High Reliability APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE, HIGH SPEED SWITCHING

SWITCHMODE SERIES NPN POWER TRANSISTORS ... designed for use in high-voltage,high-speed,power switching in inductive circuit, and swrtchmode applications such as switching regulator*s,converters. FEATURES: * Collector-Emitter Sustaining Voltage VCEO(sus) = 400 V (Min) * Collector-Emitter Satur

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • High voltage,high speed switching • High reliability APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers

SAVANTIC

High speed switching transistor

[COLLMER SEMICONDUCTOR] High speed switching transistor

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • High voltage,high speed switching • High reliability APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers

ISC

无锡固电

TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHING

Features ● High voltage,High speed switching ● High reliability Applications ● Switching regulators ● Ultrasonic generators ● High frequency inverters ● General purpose power amplifiers

Fuji

富士通

POWER TRANSISTORS(10A,400V,80W)

SWITCHMODE SERIES NPN POWER TRANSISTORS ... designed for use in high-voltage,high-speed,power switching in inductive circuit, and swrtchmode applications such as switching regulator*s,converters. FEATURES: * Collector-Emitter Sustaining Voltage VCEO(sus) = 400 V (Min) * Collector-Emitter Satur

MOSPEC

统懋

MOLD TYPE BIPOLAR TRANSISTORS

MOLD TYPE BIPOLAR TRANSISTORS Rating and Specifications

ETCList of Unclassifed Manufacturers

未分类制造商

HIGH VOLTAGE HIGH SPEED SWITCHING

HIGH VOLTAGE HIGH SPEED SWITCHING FEATURES * High voltage, high speed switching * High reliability

UTC

友顺

80 WATT NPN EPITAXIAL SILICON TRANSISTOR

Features ● High voltage,High speed switching ● High reliability Applications ● Switching regulators ● Ultrasonic generators ● High frequency inverters ● General purpose power amplifiers

THINKISEMI

思祁半导体

Silicon NPN triple diffusion planar transistor

FEATURES • High collector to base voltage VCBO • Satisfactory linearity of foward current transfer ratio hFE • TO-3P package which can be installed to the heat sink • High-speed switching with one screw APPLICATIONS • Switching regulator and general purpose • Ultrasonic gene

NELLSEMI

尼尔半导体

HIGH VOLTAGE HIGH SPEED SWITCHING

HIGH VOLTAGE HIGH SPEED SWITCHING FEATURES * High voltage, high speed switching * High reliability

UTC

友顺

HIGH VOLTAGE HIGH SPEED SWITCHING

HIGH VOLTAGE HIGH SPEED SWITCHING FEATURES * High voltage, high speed switching * High reliability

UTC

友顺

MOLD TYPE BIPOLAR TRANSISTORS

MOLD TYPE BIPOLAR TRANSISTORS Rating and Specifications

ETCList of Unclassifed Manufacturers

未分类制造商

TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHING

Features • High voltage, high speed switching • High reliability Applications • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers

Fuji

富士通

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • High voltage,high speed switching • High reliability APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • High voltage,high speed switching • High reliability APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEo= 400V(Min) • High Switching Speed • High Reliability APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR)?

DESCRIPTION 2SC2630 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. APPLICATION 40 to 60 watts output power amplifiers in VHF band mobile radio applications.

Mitsubishi

三菱电机

Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)

For low-frequency high breakdown voltage amplification Complementary to 2SA1123 ■Features ● Satisfactory linearity of forward current transfer ratio hFE. ● High collector to emitter voltage VCEO. ● Small collector output capacitance Cob .

Panasonic

松下

Silicon PNP epitaxial planer type

For low-frequency high breakdown voltage amplification Complementary to 2SC2631 ■Features ● Satisfactory foward current transfer ratio hFE collector current IC characteristics. ● High collector to emitter voltage VCEO. ● Small collector output capacitance Cob. ● Makes up a comp

Panasonic

松下

Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)

Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1124 ■ Features ● Satisfactory linearity of forward current transfer ratio hFE. ● High collector to emitter voltage VCEO. ● Small collector output capacitance Cob.

Panasonic

松下

Silicon NPN Epitaxial Planar TVpe

Features Good linearity of DC current gain (hre) High collector-emitter voltage (Vcgo) Small collector output capacitance (Co)

Panasonic

松下

Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)

For low-frequency and low-noise amplification Complementary to 2SA1127 ■Features •Low noise voltage NV •High forward current transfer ratio hFE

Panasonic

松下

Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation)

Silicon NPN epitaxial planar type For high-frequency amplification/oscillation ■ Features ● High transition frequency fT. ● M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

Panasonic

松下

SI NPN EPITAXIAL PLANAR

AF Power Amplifier For Strobo, Converter Features Low collector-emitter saturation voltage (VCE(sat)) High performance and good operating characteristics at low supply voltage

Panasonic

松下

TRANSISTOR (VHF BAND POWER AMPLIFIER APPLICATIONS)

VHF BAND POWER AMPLIFIER APPLICATIONS

TOSHIBA

东芝

TRANSISTOR (VHF BAND POWER AMPLIFIER APPLICATIONS)

VHF BAND POWER AMPLIFIER APPLICATIONS • Output Power : P0=15W (Min.) (f=175MHz, VCC=12.5V, Pi=1.3W)

TOSHIBA

东芝

TRANSISTOR (VHF BAND POWER AMPLIFIER APPLICATIONS)

VHF BAND POWER AMPLIFIER APPLICATION Output Power : Po = 28W (Min.) (f =175MHz , VCC = 12.5V, Pi = 4W)

TOSHIBA

东芝

2SC26产品属性

  • 类型

    描述

  • 型号

    2SC26

  • 制造商

    Panasonic Industrial Company

  • 功能描述

    TRANSISTOR

更新时间:2025-12-25 11:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
23+
TO-3
10000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
MITSUBISHI
25+
高频管
1143
自家优势产品,欢迎来电咨询
TOS
NA
8553
一级代理 原装正品假一罚十价格优势长期供货
MITSUBIS
23+
TO-59
8510
原装正品代理渠道价格优势
MITSUBISHI/三菱
23+
TO-58
6800
专注配单,只做原装进口现货
CJ/长电
23+
TO-92L
50000
全新原装正品现货,支持订货
MITSUBIS特
25+23+
sdi
42286
绝对原装正品全新进口深圳现货
CJ/长电
25+
原厂原封装
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
MITSUBISHI
24+
46
FUJITSU/富士通
24+
TO-59
208
价格优势

2SC26数据表相关新闻