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2SC259晶体管资料

  • 2SC259别名:2SC259三极管、2SC259晶体管、2SC259晶体三极管

  • 2SC259生产厂家:日本冲电气工业股份公司

  • 2SC259制作材料:Si-NPN

  • 2SC259性质:通用型 (Uni)

  • 2SC259封装形式:直插封装

  • 2SC259极限工作电压:90V

  • 2SC259最大电流允许值:0.8A

  • 2SC259最大工作频率:250MHZ

  • 2SC259引脚数:3

  • 2SC259最大耗散功率:0.8W

  • 2SC259放大倍数

  • 2SC259图片代号:C-40

  • 2SC259vtest:90

  • 2SC259htest:250000000

  • 2SC259atest:0.8

  • 2SC259wtest:0.8

  • 2SC259代换 2SC259用什么型号代替:BC141,BC301,BFX96A,BFX97A,BSW53,BSW54,2N2217,2SC256,3DA32A,

型号 功能描述 生产厂家 企业 LOGO 操作

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SA1110 ·Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ·High transition frequency fT ·Optimum for the driver stage of a 40 W to 60 W output amplifier APPLICATIONS ·For low-

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SA1110 ·Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ·High transition frequency fT ·Optimum for the driver stage of a 40 W to 60 W output amplifier APPLICATIONS ·For low-fr

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SA1110 ·Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ·High transition frequency fT ·Optimum for the driver stage of a 40 W to 60 W output amplifier APPLICATIONS ·For lo

ISC

无锡固电

Silicon NPN epitaxial planar type

For low-frequency power amplification ■Features •Excellent collector current IC characteristics of forward current transfer ratio hFE •High transition frequency fT •TO-126B package which requires no insulation plate for installation to the heat sink

PANASONIC

松下

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SA1111/1112 ·Good linearity of hFE ·High VCEO APPLICATIONS ·For audio frequency, high power amplifiers application

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SA1111/1112 ·Good linearity of hFE ·High VCEO APPLICATIONS ·For audio frequency, high power amplifiers application

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SA1111/1112 ·Good linearity of hFE ·High VCEO APPLICATIONS ·For audio frequency, high power amplifiers application

SAVANTIC

AF Driver,High Power Amplifier Amplifier Complementary Pair with 2SA1111,2SA1112

Silicon NPN Epitaxial Planar Type AF Driver, High Power Amplifier Complementary Pair with 2SA1111, 2SA1112

ETCList of Unclassifed Manufacturers

未分类制造商

AF Driver,High Power Amplifier Amplifier Complementary Pair with 2SA1111,2SA1112

Silicon NPN Epitaxial Planar Type AF Driver, High Power Amplifier Complementary Pair with 2SA1111, 2SA1112

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SA1111/1112 ·Good linearity of hFE ·High VCEO APPLICATIONS ·For audio frequency, high power amplifiers application

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SA1111/1112 ·Good linearity of hFE ·High VCEO APPLICATIONS ·For audio frequency, high power amplifiers application

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SA1111/1112 ·Good linearity of hFE ·High VCEO APPLICATIONS ·For audio frequency, high power amplifiers application

SAVANTIC

SI NPN EPITAXIAL PLANAR

AF Power Amplifier For Strobo, Converter Features Low collector-emitter saturation voltage (VCE(sat)) High performance and good operating characteristics at low supply voltage

PANASONIC

松下

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Low saturation voltage APPLICATIONS ·AF power amplifier ·For electronic flash unit ·Converter

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Low saturation voltage APPLICATIONS ·AF power amplifier ·For electronic flash unit ·Converter

SAVANTIC

Silicon NPN Power Transistors

文件:131.03 Kbytes Page:4 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:187.6 Kbytes Page:4 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

文件:187.6 Kbytes Page:4 Pages

JMNIC

锦美电子

封装/外壳:TO-225AA,TO-126-3 包装:散装 描述:TRANS NPN 120V 0.5A TO126B-A1 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

PANASONIC

松下

Silicon NPN Power Transistors

文件:133.63 Kbytes Page:4 Pages

SAVANTIC

Transistor - Silicon NPN Epitaxial Planar Type

PANASONIC

松下

Silicon NPN Power Transistors

文件:119.84 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

文件:119.84 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

文件:133.63 Kbytes Page:4 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:101.16 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistor

文件:125.34 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Power Device - Power Transistors - Others

PANASONIC

松下

Trans GP BJT NPN 20V 5A 3-Pin TO-126A-A1

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SC259产品属性

  • 类型

    描述

  • Maximum Transition Frequency:

    150(Typ)MHz

  • Maximum Power Dissipation:

    10000mW

  • Maximum Operating Temperature:

    150°C

  • Maximum Emitter Base Voltage:

    7V

  • Maximum DC Collector Current:

    5A

  • Maximum Collector Emitter Voltage:

    20V

  • Maximum Collector Emitter Saturation Voltage:

    1@0.1A@3AV

  • Maximum Collector Base Voltage:

    40V

  • Material:

    Si

  • Configuration:

    Single

  • Category:

    Bipolar Power

更新时间:2026-5-15 16:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Mitsubishi Electric (三菱)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
PANASONIC
25+
TO-126
30000
代理全新原装现货,价格优势
ST
23+
CAN to-39
16900
正规渠道,只有原装!
PANASONIC/松下
22+
TO-126
20000
只做原装
MITSUBISHI
03+
TO-92S
502
全新 发货1-2天
24+
TO-220
10000
全新
ST
26+
CAN to-39
60000
只有原装 可配单
三菱
23+
TO-92S
20000
原装正品,假一罚十
ST
25+
CAN to-39
20000
原装
PANASONIC
99+
TO-126
965
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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