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2SC248晶体管资料

  • 2SC248别名:2SC248三极管、2SC248晶体管、2SC248晶体三极管

  • 2SC248生产厂家:日本富士通公司

  • 2SC248制作材料:Si-NPN

  • 2SC248性质:通用型 (Uni)

  • 2SC248封装形式:直插封装

  • 2SC248极限工作电压:70V

  • 2SC248最大电流允许值:0.05A

  • 2SC248最大工作频率:170MHZ

  • 2SC248引脚数:3

  • 2SC248最大耗散功率:0.3W

  • 2SC248放大倍数

  • 2SC248图片代号:D-8

  • 2SC248vtest:70

  • 2SC248htest:170000000

  • 2SC248atest:0.05

  • 2SC248wtest:0.3

  • 2SC248代换 2SC248用什么型号代替:BC174,BC182,BC190,BC546,2SC1775(A),2SC1890(A),2SD755,3DG170G,

型号 功能描述 生产厂家 企业 LOGO 操作

Silicon NPN epitaxial planer type(For high-frequency amplification / oscillation / mixing)

Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing ■ Features • High transition frequency fT • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing

PANASONIC

松下

isc Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO = 150V(Min) · High Current Capability · High Collector Power Dissipation · Complement to Type 2SA1021 APPLICATIONS · Color TV vertical deflection output applications. · Color TV class B sound output applications

ISC

无锡固电

TRANSISTOR (HIGH VOLTAGE SWITCHING AND, COLOR TV HORIZ. DRIVER, CHROMA OUTPUT APPLICATIONS)

High-Voltage Switching and Amplifier Applications Color TV Horizontal Driver Applications Color TV Chroma Output Applications ​​​​​​​ • High breakdown voltage: VCEO= 300 V • Small collector output capacitance: Cob= 3.0 pF (typ.) • Recommended for chroma output and driver applications for

TOSHIBA

东芝

TO-92 Plastic Package Transistors (NPN)

TO-92 Plastic Package Transistors(NPN)

ETCList of Unclassifed Manufacturers

未分类制造商

NPN EPITAXIAL PLANAR TRANSISTOR

NPN EPITAXIAL PLANAR TRANSISTOR FEATURES * High Voltage : V(BR)CEO= 300V * Small Collector Output Capacitance: Cob=3.0pF(Typ.)

UTC

友顺

isc Silicon NPN Pow Transistor

DESCRIPTION • High breakdown voltage • Low output capacitance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Color TV chroma output applications • Color TV horiz. driver applications • High voltage switching an

ISC

无锡固电

TO-92L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURE ● High Voltage :VCEO=300V ● Small Collector Output Capacitance: Cob=3.0pF(Typ)

JIANGSU

长电科技

TRANSISTOR (NPN)

FEATURE Power dissipation PCM: 0.9 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: 300 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

Silicon NPN transistor in a TO-92LM Plastic Package

Descriptions Silicon NPN transistor in a TO-92LM Plastic Package. Features High voltage, small collector output capacitance. Applications High voltage switching and amplifier, color TV horiz driver, chroma output applications..

FOSHAN

蓝箭电子

NPN Epitaxial Silicon Transistor

Features • High Voltage:Vceo=300V • Small collector output capacitance:Cob=3.0pF(Typ)

MCC

Bipolar Transistor

*HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS*COLOR TV HORIZ. DRIVER APPLICATIONS *COLOR TV CHROMA OUTPUT APPLICATIONS • High Voltage :V(BR)CEO= 300V   \n• Small Collector Output Capacitance: Cob=3.0pF(Typ.);

UTC

友顺

NPN Epitaxial Silicon Transistor

Features • High Voltage:Vceo=300V • Small collector output capacitance:Cob=3.0pF(Typ)

MCC

NPN Epitaxial Silicon Transistor

Features • High Voltage:Vceo=300V • Small collector output capacitance:Cob=3.0pF(Typ)

MCC

HIGH VOLTAGE GENERAL AMPLIFIER APPLICATIONS. COLOR TV CLASS B SOUND OUTPUT APPLICATIONS.

FEATURES: -Large Collector Current and Collector Power Dissipation Capability. (Pc=2.00 at Ta=25°C) -Complementary to 2SA1195

TOSHIBA

东芝

SILICON EPITAXAL BASE VLESA TRANSISTOR

2SA1060 PNP 2SC2484 NPN

PANASONIC

松下

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 80V(Min) ·High Power Dissipation ·Complement to Type 2SA1060 APPLICATIONS ·Designed for high power audio frequency amplifier applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type 2SA1061 • High collector power dissipation APPLICATIONS • High power audio frequency amplifier

ISC

无锡固电

SILICON EPITAXAL BASE LESA TRANSISTOR

SILICON EPITAXAL BASE VLESA TRANSISTOR High Power Audio Frequency Amplifier Complementary Pair with 2SC2485 Features: • High collector power dissipation: 70W(Tc=25 °C)

PANASONIC

松下

Silicon Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type 2SA1061 • High collector power dissipation APPLICATIONS • High power audio frequency amplifier

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type 2SA1061 • High collector power dissipation APPLICATIONS • High power audio frequency amplifier

SAVANTIC

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) • High Power Dissipation • Complement to Type 2SA1061 APPLICATIONS • Designed for high power audio frequency amplifier applications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION · With TO-3PN package · Complement to type 2SA1062 · High collector power dissipation APPLICATIONS · High power audio frequency amplifier VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 5 V

ISC

无锡固电

Silicon NPN Power Transistors

·With TO-3PN package ·Complement to type 2SA1062 ·High collector power dissipation APPLICATIONS ·High power audio frequency amplifier

SAVANTIC

SILICON EPITAXAL BASE LESA TRANSISTOR

Silicon Epitaxal Base Mesa transistor 2SC2486 --> NPN 2SA1062 -->PNP

PANASONIC

松下

SI NPN EPITAXIAL MESA

2SC2488 NPN 2SA1064 PNP 2SC2489 NPN 2SA1066 PNP

PANASONIC

松下

isc Silicon NPN Power Transistor

Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 150V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SA1064 APPLICATIONS ·Designed for AF amplifier, high power amplifier applications.

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION • Good Linearity of hFE • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 150V (Min) • Wide Area of Safe Operation • Complement to Type 2SA1065 APPLICATIONS • Designed for AF amplifier,high power amplifier applications.

ISC

无锡固电

SI NPN EPITAXIAL MESA

2SC2488 NPN 2SA1064 PNP 2SC2489 NPN 2SA1066 PNP

PANASONIC

松下

Silicon NPN Power Transistor

文件:127.53 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

COLOR TELEVISION N1PS Chassis

文件:2.69679 Mbytes Page:54 Pages

TOSHIBA

东芝

COLOR TELEVISION

文件:2.69679 Mbytes Page:54 Pages

TOSHIBA

东芝

COLOUR TELEVISION C9PJ Chassis

文件:6.49885 Mbytes Page:126 Pages

TOSHIBA

东芝

NPN Epitaxial Silicon Transistor

文件:458.6 Kbytes Page:4 Pages

MCC

Silicon NPN Epitaxial Type (PCT Process)

文件:133.96 Kbytes Page:5 Pages

TOSHIBA

东芝

封装/外壳:TO-226-3,TO-92-3 长体 包装:散装 描述:TRANS NPN 300V 0.1A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

封装/外壳:TO-226-3,TO-92-3 长体 包装:散装 描述:TRANS NPN 300V 0.1A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

Silicon NPN Epitaxial Type (PCT Process)

文件:133.96 Kbytes Page:5 Pages

TOSHIBA

东芝

NPN Epitaxial Silicon Transistor

文件:458.6 Kbytes Page:4 Pages

MCC

NPN EPITAXIAL PLANAR TRANSISTOR

文件:122.88 Kbytes Page:3 Pages

UTC

友顺

NPN Epitaxial Silicon Transistor

文件:458.6 Kbytes Page:4 Pages

MCC

中等功率双极型晶体管

MCC

中等功率双极型晶体管

MCC

NPN Epitaxial Silicon Transistor

文件:458.6 Kbytes Page:4 Pages

MCC

Silicon NPN Power Transistor

文件:134.86 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

文件:140.88 Kbytes Page:3 Pages

SAVANTIC

Silicon Power Transistors

文件:130.169 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon Power Transistors

文件:130.169 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

文件:141.13 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistor

文件:135.4 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistor

文件:129.12 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SC248产品属性

  • 类型

    描述

  • Polarity:

    NPN

  • PCM(W):

    0.9

  • IC(A):

    0.1

  • VCBO(V):

    300

  • VCEO(V):

    300

  • VEBO(V):

    7

  • hFEMin:

    30

  • hFEMax:

    150

  • hFE@VCE(V):

    10

  • hFE@IC(A):

    0.02

  • VCE(sat)(V):

    1

  • VCE(sat)@IC(A):

    0.01

  • VCE(sat)@IB(A):

    0.001

  • Package:

    TO-92MOD

更新时间:2026-5-16 8:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
蓝箭
TO92LM
100000
2012
TOS
24+
原厂封装
5500
原装现货假一罚十
TOS
23+
NA
20000
全新原装假一赔十
TOSHIBA/东芝
2026+
TO92
54648
百分百原装现货 实单必成 欢迎询价
TOSHIBA/东芝
25+
TO-92
26068
TOSHIBA/东芝全新特价2SC2482-Y即刻询购立享优惠#长期有货
TOS
23+
TO-92C
134600
专做原装正品,假一罚百!
TOS
TO-92L
8553
一级代理 原装正品假一罚十价格优势长期供货
CJ/长晶
21+24+
TO-92-3
6794
全新原装现货QQ:547425301手机17621633780杨小姐
TOSHIBA
13+
TO-92
160
一级代理,专注军工、汽车、医疗、工业、新能源、电力
TOSHIBA
25+
TO-92
10000
百分百原装正品 真实公司现货库存 本公司只做原装 可

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