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位置：首页 > IC中文资料 > 2SC248

2SC248晶体管资料

  • 2SC248别名：2SC248三极管、2SC248晶体管、2SC248晶体三极管

  • 2SC248生产厂家：日本富士通公司

  • 2SC248制作材料：Si-NPN

  • 2SC248性质：通用型 （Uni）

  • 2SC248封装形式：直插封装

  • 2SC248极限工作电压：70V

  • 2SC248最大电流允许值：0.05A

  • 2SC248最大工作频率：170MHZ

  • 2SC248引脚数：3

  • 2SC248最大耗散功率：0.3W

  • 2SC248放大倍数：

  • 2SC248图片代号：D-8

  • 2SC248vtest：70

  • 2SC248htest：170000000

  • 2SC248atest：0.05

  • 2SC248wtest：0.3

  • 2SC248代换 2SC248用什么型号代替：BC174,BC182,BC190,BC546,2SC1775(A),2SC1890(A),2SD755,3DG170G,

型号 功能描述 生产厂家 企业 LOGO 操作
2SC2480

Silicon NPN epitaxial planer type(For high-frequency amplification / oscillation / mixing)

Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing ■ Features • High transition frequency fT • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing

PANASONIC

松下

2SC2481

isc Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO = 150V(Min) · High Current Capability · High Collector Power Dissipation · Complement to Type 2SA1021 APPLICATIONS · Color TV vertical deflection output applications. · Color TV class B sound output applications

ISC

无锡固电

2SC2482

TO-92 Plastic Package Transistors (NPN)

TO-92 Plastic Package Transistors(NPN)

ETCList of Unclassifed Manufacturers

未分类制造商

2SC2482

NPN EPITAXIAL PLANAR TRANSISTOR

NPN EPITAXIAL PLANAR TRANSISTOR FEATURES * High Voltage : V(BR)CEO= 300V * Small Collector Output Capacitance: Cob=3.0pF(Typ.)

UTC

友顺

2SC2482

isc Silicon NPN Pow Transistor

DESCRIPTION • High breakdown voltage • Low output capacitance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Color TV chroma output applications • Color TV horiz. driver applications • High voltage switching an

ISC

无锡固电

2SC2482

TO-92L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURE ● High Voltage :VCEO=300V ● Small Collector Output Capacitance: Cob=3.0pF(Typ)

JIANGSU

长电科技

2SC2482

TRANSISTOR (HIGH VOLTAGE SWITCHING AND, COLOR TV HORIZ. DRIVER, CHROMA OUTPUT APPLICATIONS)

High-Voltage Switching and Amplifier Applications Color TV Horizontal Driver Applications Color TV Chroma Output Applications ​​​​​​​ • High breakdown voltage: VCEO= 300 V • Small collector output capacitance: Cob= 3.0 pF (typ.) • Recommended for chroma output and driver applications for

TOSHIBA

东芝

2SC2482

NPN Epitaxial Silicon Transistor

Features • High Voltage:Vceo=300V • Small collector output capacitance:Cob=3.0pF(Typ)

MCC

2SC2482

TRANSISTOR (NPN)

FEATURE Power dissipation PCM: 0.9 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: 300 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

2SC2482

Silicon NPN transistor in a TO-92LM Plastic Package

Descriptions Silicon NPN transistor in a TO-92LM Plastic Package. Features High voltage, small collector output capacitance. Applications High voltage switching and amplifier, color TV horiz driver, chroma output applications

FOSHAN

蓝箭电子

2SC2482

Bipolar Transistor

*HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS*COLOR TV HORIZ. DRIVER APPLICATIONS *COLOR TV CHROMA OUTPUT APPLICATIONS • High Voltage :V(BR)CEO= 300V   \n• Small Collector Output Capacitance: Cob=3.0pF(Typ.);

UTC

友顺

2SC2482-O

NPN Epitaxial Silicon Transistor

Features • High Voltage:Vceo=300V • Small collector output capacitance:Cob=3.0pF(Typ)

MCC

2SC2482-Y

NPN Epitaxial Silicon Transistor

Features • High Voltage:Vceo=300V • Small collector output capacitance:Cob=3.0pF(Typ)

MCC

2SC2483

HIGH VOLTAGE GENERAL AMPLIFIER APPLICATIONS. COLOR TV CLASS B SOUND OUTPUT APPLICATIONS.

FEATURES: -Large Collector Current and Collector Power Dissipation Capability. (Pc=2.00 at Ta=25°C) -Complementary to 2SA1195

TOSHIBA

东芝

2SC2484

SILICON EPITAXAL BASE VLESA TRANSISTOR

2SA1060 PNP 2SC2484 NPN

PANASONIC

松下

2SC2484

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 80V(Min) ·High Power Dissipation ·Complement to Type 2SA1060 APPLICATIONS ·Designed for high power audio frequency amplifier applications

ISC

无锡固电

2SC2485

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type 2SA1061 • High collector power dissipation APPLICATIONS • High power audio frequency amplifier

ISC

无锡固电

2SC2485

Silicon Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type 2SA1061 • High collector power dissipation APPLICATIONS • High power audio frequency amplifier

JMNIC

锦美电子

2SC2485

SILICON EPITAXAL BASE LESA TRANSISTOR

SILICON EPITAXAL BASE VLESA TRANSISTOR High Power Audio Frequency Amplifier Complementary Pair with 2SC2485 Features: • High collector power dissipation: 70W(Tc=25 °C)

PANASONIC

松下

2SC2485

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) • High Power Dissipation • Complement to Type 2SA1061 APPLICATIONS • Designed for high power audio frequency amplifier applications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SC2485

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type 2SA1061 • High collector power dissipation APPLICATIONS • High power audio frequency amplifier

SAVANTIC

2SC2486

Silicon NPN Power Transistors

·With TO-3PN package ·Complement to type 2SA1062 ·High collector power dissipation APPLICATIONS ·High power audio frequency amplifier

SAVANTIC

2SC2486

SILICON EPITAXAL BASE LESA TRANSISTOR

Silicon Epitaxal Base Mesa transistor 2SC2486 --> NPN 2SA1062 -->PNP

PANASONIC

松下

2SC2486

Silicon NPN Power Transistors

DESCRIPTION · With TO-3PN package · Complement to type 2SA1062 · High collector power dissipation APPLICATIONS · High power audio frequency amplifier VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 5 V

ISC

无锡固电

2SC2488

isc Silicon NPN Power Transistor

Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 150V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SA1064 APPLICATIONS ·Designed for AF amplifier, high power amplifier applications.

ISC

无锡固电

2SC2488

SI NPN EPITAXIAL MESA

2SC2488 NPN 2SA1064 PNP 2SC2489 NPN 2SA1066 PNP

PANASONIC

松下

2SC2489

SI NPN EPITAXIAL MESA

2SC2488 NPN 2SA1064 PNP 2SC2489 NPN 2SA1066 PNP

PANASONIC

松下

2SC2489

isc Silicon NPN Power Transistor

DESCRIPTION • Good Linearity of hFE • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 150V (Min) • Wide Area of Safe Operation • Complement to Type 2SA1065 APPLICATIONS • Designed for AF amplifier,high power amplifier applications.

ISC

无锡固电

2SC2481

Silicon NPN Power Transistor

文件：127.53 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SC2482

Silicon NPN Epitaxial Type (PCT Process)

文件：133.96 Kbytes Page：5 Pages

TOSHIBA

东芝

2SC2482

COLOR TELEVISION N1PS Chassis

文件：2.69679 Mbytes Page：54 Pages

TOSHIBA

东芝

2SC2482

COLOR TELEVISION

文件：2.69679 Mbytes Page：54 Pages

TOSHIBA

东芝

2SC2482

COLOUR TELEVISION C9PJ Chassis

文件：6.49885 Mbytes Page：126 Pages

TOSHIBA

东芝

2SC2482

NPN Epitaxial Silicon Transistor

文件：458.6 Kbytes Page：4 Pages

MCC

2SC2482(FJTN,F,M)

封装/外壳：TO-226-3，TO-92-3 长体 包装：散装 描述：TRANS NPN 300V 0.1A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ETC

知名厂家

2SC2482(T6TOJS,F,M

封装/外壳：TO-226-3，TO-92-3 长体 包装：散装 描述：TRANS NPN 300V 0.1A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ETC

知名厂家

2SC2482_06

Silicon NPN Epitaxial Type (PCT Process)

文件：133.96 Kbytes Page：5 Pages

TOSHIBA

东芝

2SC2482_13

NPN Epitaxial Silicon Transistor

文件：458.6 Kbytes Page：4 Pages

MCC

2SC2482_15

NPN EPITAXIAL PLANAR TRANSISTOR

文件：122.88 Kbytes Page：3 Pages

UTC

友顺

2SC2482-O

NPN Epitaxial Silicon Transistor

文件：458.6 Kbytes Page：4 Pages

MCC

2SC2482-O

中等功率双极型晶体管

MCC

2SC2482-Y

中等功率双极型晶体管

MCC

2SC2482-Y

NPN Epitaxial Silicon Transistor

文件：458.6 Kbytes Page：4 Pages

MCC

2SC2484

Silicon NPN Power Transistor

文件：134.86 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SC2485

Silicon NPN Power Transistors

文件：140.88 Kbytes Page：3 Pages

SAVANTIC

2SC2485_15

Silicon Power Transistors

文件：130.169 Kbytes Page：3 Pages

JMNIC

锦美电子

2SC2485_2014

Silicon Power Transistors

文件：130.169 Kbytes Page：3 Pages

JMNIC

锦美电子

2SC2486

Silicon NPN Power Transistors

文件：141.13 Kbytes Page：3 Pages

SAVANTIC

2SC2486

Silicon NPN Power Transistor

文件：135.4 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SC2488

Silicon NPN Power Transistor

文件：129.12 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SC248产品属性

  • 类型

    描述

  • Polarity：

    NPN

  • PCM(W)：

    0.9

  • IC(A)：

    0.1

  • VCBO(V)：

    300

  • VCEO(V)：

    300

  • VEBO(V)：

    7

  • hFEMin：

    30

  • hFEMax：

    150

  • hFE@VCE(V)：

    10

  • hFE@IC(A)：

    0.02

  • VCE(sat)(V)：

    1

  • VCE(sat)@IC(A)：

    0.01

  • VCE(sat)@IB(A)：

    0.001

  • Package：

    TO-92MOD

2SC248供应商更多...

更新时间：2026-7-22 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市科芯源微电子有限公司
2SC2486
MAT
2026+
TO-3P
54648
百分百原装现货 实单必成 欢迎询价
询价
深圳市一线半导体有限公司
2SC2486
24+
TO-3PN
10000
全新
询价

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