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2SC248晶体管资料
2SC248别名:2SC248三极管、2SC248晶体管、2SC248晶体三极管
2SC248生产厂家:日本富士通公司
2SC248制作材料:Si-NPN
2SC248性质:通用型 (Uni)
2SC248封装形式:直插封装
2SC248极限工作电压:70V
2SC248最大电流允许值:0.05A
2SC248最大工作频率:170MHZ
2SC248引脚数:3
2SC248最大耗散功率:0.3W
2SC248放大倍数:
2SC248图片代号:D-8
2SC248vtest:70
2SC248htest:170000000
- 2SC248atest:0.05
2SC248wtest:0.3
2SC248代换 2SC248用什么型号代替:BC174,BC182,BC190,BC546,2SC1775(A),2SC1890(A),2SD755,3DG170G,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon NPN epitaxial planer type(For high-frequency amplification / oscillation / mixing) Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing ■ Features • High transition frequency fT • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing | Panasonic 松下 | |||
isc Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO = 150V(Min) · High Current Capability · High Collector Power Dissipation · Complement to Type 2SA1021 APPLICATIONS · Color TV vertical deflection output applications. · Color TV class B sound output applications | ISC 无锡固电 | |||
TO-92 Plastic Package Transistors (NPN) TO-92 Plastic Package Transistors(NPN) | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR FEATURES * High Voltage : V(BR)CEO= 300V * Small Collector Output Capacitance: Cob=3.0pF(Typ.) | UTC 友顺 | |||
isc Silicon NPN Pow Transistor DESCRIPTION • High breakdown voltage • Low output capacitance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Color TV chroma output applications • Color TV horiz. driver applications • High voltage switching an | ISC 无锡固电 | |||
TO-92L Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURE ● High Voltage :VCEO=300V ● Small Collector Output Capacitance: Cob=3.0pF(Typ) | JIANGSU 长电科技 | |||
TRANSISTOR (HIGH VOLTAGE SWITCHING AND, COLOR TV HORIZ. DRIVER, CHROMA OUTPUT APPLICATIONS) High-Voltage Switching and Amplifier Applications Color TV Horizontal Driver Applications Color TV Chroma Output Applications • High breakdown voltage: VCEO= 300 V • Small collector output capacitance: Cob= 3.0 pF (typ.) • Recommended for chroma output and driver applications for | TOSHIBA 东芝 | |||
NPN Epitaxial Silicon Transistor Features • High Voltage:Vceo=300V • Small collector output capacitance:Cob=3.0pF(Typ) | MCC | |||
TRANSISTOR (NPN) FEATURE Power dissipation PCM: 0.9 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: 300 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | |||
Silicon NPN transistor in a TO-92LM Plastic Package Descriptions Silicon NPN transistor in a TO-92LM Plastic Package. Features High voltage, small collector output capacitance. Applications High voltage switching and amplifier, color TV horiz driver, chroma output applications.. | FOSHAN 蓝箭电子 | |||
NPN Epitaxial Silicon Transistor Features • High Voltage:Vceo=300V • Small collector output capacitance:Cob=3.0pF(Typ) | MCC | |||
NPN Epitaxial Silicon Transistor Features • High Voltage:Vceo=300V • Small collector output capacitance:Cob=3.0pF(Typ) | MCC | |||
HIGH VOLTAGE GENERAL AMPLIFIER APPLICATIONS. COLOR TV CLASS B SOUND OUTPUT APPLICATIONS. FEATURES: -Large Collector Current and Collector Power Dissipation Capability. (Pc=2.00 at Ta=25°C) -Complementary to 2SA1195 | TOSHIBA 东芝 | |||
SILICON EPITAXAL BASE VLESA TRANSISTOR 2SA1060 PNP 2SC2484 NPN | Panasonic 松下 | |||
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 80V(Min) ·High Power Dissipation ·Complement to Type 2SA1060 APPLICATIONS ·Designed for high power audio frequency amplifier applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type 2SA1061 • High collector power dissipation APPLICATIONS • High power audio frequency amplifier | ISC 无锡固电 | |||
Silicon Power Transistors DESCRIPTION • With TO-3PN package • Complement to type 2SA1061 • High collector power dissipation APPLICATIONS • High power audio frequency amplifier | JMNIC 锦美电子 | |||
SILICON EPITAXAL BASE LESA TRANSISTOR SILICON EPITAXAL BASE VLESA TRANSISTOR High Power Audio Frequency Amplifier Complementary Pair with 2SC2485 Features: • High collector power dissipation: 70W(Tc=25 °C) | Panasonic 松下 | |||
Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) • High Power Dissipation • Complement to Type 2SA1061 APPLICATIONS • Designed for high power audio frequency amplifier applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type 2SA1061 • High collector power dissipation APPLICATIONS • High power audio frequency amplifier | SAVANTIC | |||
Silicon NPN Power Transistors ·With TO-3PN package ·Complement to type 2SA1062 ·High collector power dissipation APPLICATIONS ·High power audio frequency amplifier | SAVANTIC | |||
SILICON EPITAXAL BASE LESA TRANSISTOR Silicon Epitaxal Base Mesa transistor 2SC2486 --> NPN 2SA1062 -->PNP | Panasonic 松下 | |||
Silicon NPN Power Transistors DESCRIPTION · With TO-3PN package · Complement to type 2SA1062 · High collector power dissipation APPLICATIONS · High power audio frequency amplifier VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 5 V | ISC 无锡固电 | |||
isc Silicon NPN Power Transistor Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 150V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SA1064 APPLICATIONS ·Designed for AF amplifier, high power amplifier applications. | ISC 无锡固电 | |||
SI NPN EPITAXIAL MESA 2SC2488 NPN 2SA1064 PNP 2SC2489 NPN 2SA1066 PNP | Panasonic 松下 | |||
SI NPN EPITAXIAL MESA 2SC2488 NPN 2SA1064 PNP 2SC2489 NPN 2SA1066 PNP | Panasonic 松下 | |||
isc Silicon NPN Power Transistor DESCRIPTION • Good Linearity of hFE • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 150V (Min) • Wide Area of Safe Operation • Complement to Type 2SA1065 APPLICATIONS • Designed for AF amplifier,high power amplifier applications. | ISC 无锡固电 | |||
Silicon NPN Power Transistor 文件:127.53 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon NPN Epitaxial Type (PCT Process) 文件:133.96 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
COLOR TELEVISION N1PS Chassis 文件:2.69679 Mbytes Page:54 Pages | TOSHIBA 东芝 | |||
COLOR TELEVISION 文件:2.69679 Mbytes Page:54 Pages | TOSHIBA 东芝 | |||
COLOUR TELEVISION C9PJ Chassis 文件:6.49885 Mbytes Page:126 Pages | TOSHIBA 东芝 | |||
NPN Epitaxial Silicon Transistor 文件:458.6 Kbytes Page:4 Pages | MCC | |||
Bipolar Transistor | UTC 友顺 | |||
封装/外壳:TO-226-3,TO-92-3 长体 包装:散装 描述:TRANS NPN 300V 0.1A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ETC 知名厂家 | ETC | ||
封装/外壳:TO-226-3,TO-92-3 长体 包装:散装 描述:TRANS NPN 300V 0.1A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ETC 知名厂家 | ETC | ||
Silicon NPN Epitaxial Type (PCT Process) 文件:133.96 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
NPN Epitaxial Silicon Transistor 文件:458.6 Kbytes Page:4 Pages | MCC | |||
NPN EPITAXIAL PLANAR TRANSISTOR 文件:122.88 Kbytes Page:3 Pages | UTC 友顺 | |||
NPN Epitaxial Silicon Transistor 文件:458.6 Kbytes Page:4 Pages | MCC | |||
中等功率双极型晶体管 | MCC | |||
中等功率双极型晶体管 | MCC | |||
NPN Epitaxial Silicon Transistor 文件:458.6 Kbytes Page:4 Pages | MCC | |||
Silicon NPN Power Transistor 文件:134.86 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon NPN Power Transistors 文件:140.88 Kbytes Page:3 Pages | SAVANTIC | |||
Silicon Power Transistors 文件:130.169 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon Power Transistors 文件:130.169 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon NPN Power Transistors 文件:141.13 Kbytes Page:3 Pages | SAVANTIC | |||
Silicon NPN Power Transistor 文件:135.4 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon NPN Power Transistor 文件:129.12 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 |
2SC248产品属性
- 类型
描述
- 型号
2SC248
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Technics |
20+ |
TO3 |
35830 |
原装优势主营型号-可开原型号增税票 |
|||
FUJITSU/富士通 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
Technics |
23+ |
TO-3 |
5000 |
专注配单,只做原装进口现货 |
|||
FUJITSU |
25+ |
SMD/高频管 |
150 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
MAT |
25+ |
TO-3P |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
MAT |
23+ |
TO-3 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
SANKEN |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
MAT |
24+ |
TO-3P |
990000 |
明嘉莱只做原装正品现货 |
|||
NEC |
1922+ |
8600 |
莱克讯原厂货源每一片都来自原厂原装现货薄利多 |
||||
FUJITSU |
00+ |
SMD/高频管 |
75 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
2SC248芯片相关品牌
2SC248规格书下载地址
2SC248参数引脚图相关
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2SC248数据表相关新闻
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2019-2-18
DdatasheetPDF页码索引
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