Silicon NPN epitaxial planer type(For high-frequency amplification)

Silicon NPN epitaxial planer type For high-frequency amplification ■ Features ● Optimum for RF amplification of FM/AM radios. ● High transition frequency fT. ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine pac

Silicon PNP Epitaxial Planar Type

Features ● Optimum for RF amplification of FM/AM radios ● High transition frequency fT ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features High fT. Applications Suitable for RF amplifier in FM/AM radios.

丝印代码：SR；Si NPN Triple Diffused Mesa

AF Low-noise Amplifier Complementary Pair with 2SA1034, 2SA1035 Features • Low NV • High hFE Si NPN Triple Diffused Mesa High Speed Power Switching

Silicon PNP Epitaxial Planar Type

Features ● Low noise voltage NV. ● High forward current transfer ratio hFE. ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

丝印代码：SR；Silicon NPN epitaxial planer type

AF Low-noise Amplifier Complementary Pair with 2SA1034, 2SA1035 Features • Low NV • High hFE Si NPN Triple Diffused Mesa High Speed Power Switching

丝印代码：SR；Silicon PNP epitaxial planer type

Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SC2405, 2SC2406 ■ Features • Low noise voltage NV • High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape pac

Si NPN Triple Diffused Mesa

AF Low-noise Amplifier Complementary Pair with 2SA1034, 2SA1035 Features • Low NV • High hFE Si NPN Triple Diffused Mesa High Speed Power Switching

Si NPN Triple Diffused Mesa

AF Low-noise Amplifier Complementary Pair with 2SA1034, 2SA1035 Features • Low NV • High hFE Si NPN Triple Diffused Mesa High Speed Power Switching

Si NPN Triple Diffused Mesa

AF Low-noise Amplifier Complementary Pair with 2SA1034, 2SA1035 Features • Low NV • High hFE Si NPN Triple Diffused Mesa High Speed Power Switching

Silicon PNP Epitaxial Planar Type

Features Low noise voltage NV. High forward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

丝印代码：TR；Si NPN Triple Diffused Mesa

AF Low-noise Amplifier Complementary Pair with 2SA1034, 2SA1035 Features • Low NV • High hFE Si NPN Triple Diffused Mesa High Speed Power Switching

丝印代码：TR；Silicon PNP epitaxial planer type

Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SC2405, 2SC2406 ■ Features • Low noise voltage NV • High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape pac

丝印代码：TR；Silicon NPN epitaxial planer type

AF Low-noise Amplifier Complementary Pair with 2SA1034, 2SA1035 Features • Low NV • High hFE Si NPN Triple Diffused Mesa High Speed Power Switching

Si NPN Triple Diffused Mesa

AF Low-noise Amplifier Complementary Pair with 2SA1034, 2SA1035 Features • Low NV • High hFE Si NPN Triple Diffused Mesa High Speed Power Switching

Si NPN Triple Diffused Mesa

AF Low-noise Amplifier Complementary Pair with 2SA1034, 2SA1035 Features • Low NV • High hFE Si NPN Triple Diffused Mesa High Speed Power Switching

Si NPN Triple Diffused Mesa

AF Low-noise Amplifier Complementary Pair with 2SA1034, 2SA1035 Features • Low NV • High hFE Si NPN Triple Diffused Mesa High Speed Power Switching

NPN SILICON TRANSISTOR

isc Silicon NPN RF Transistor

DESCRIPTION ·Low Noise NF = 2.4 dB TYP. ;@ f = 200 MHz ·High Gain ︱S21e︱2 = 21 dB TYP. ;@ f = 200 MHz APPLICATIONS ·Designed for use in high frequency wide band amplifier.

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 20V 650MHZ MINI3-G1 分立半导体产品 晶体管 - 双极（BJT）- 射频

Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 35V 0.05A MINI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

SI NPN TRIPLE DIFFUSED MESA

TRANS NPN 20V 0.05A MINI 3P

NPN SILICON TRANSISTOR 2SC2407

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