T O-92MOD Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Breakdown Voltage ● High Transition Frequency

50mA , 200V NPN Plastic Encapsulated Transistor

FEATURES • High Breakdown Voltage • High Transition Frequency

TRANSISTOR (NPN)

FEATURE Power dissipation PCM: 0.8 W (Tamb=25℃) Collector current ICM: 0.05 A Collector-base voltage V(BR)CBO: 200 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon NPN transistor in a TO-92LM Plastic Package

Descriptions Silicon NPN transistor in a TO-92LM Plastic Package. Features High breakdown voltage, low output capacitance, high fT. Applications TV video output, high voltage switching and driver stage of audio amplifier applications.

Silicon NPN Triple Diffused Type (PCT Process)

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封装/外壳：TO-226-3，TO-92-3 长体 包装：散装 描述：TRANS NPN 150V 0.05A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3 长体 包装：散装 描述：TRANS NPN 150V 0.05A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个