TO-92MOD Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURE Power dissipation PCM: 0.75 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TO-92L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURE ● Power Dissipation PCM: 0.75 W (Ta=25℃) ● Low Saturation Voltage (VCE(sat)=0.15V at 500mA) ● Complementary Pair with 2SA934

TRANSISTOR (NPN)

FEATURE Power dissipation PCM: 0.75 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon NPN transistor in a TO-92LM Plastic Package

Descriptions Silicon NPN transistor in a TO-92LM Plastic Package. Features High PC, low collector saturation voltage, complementary pair with 2SA934. Applications 1~2W low frequency amplifiers.

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURE Power dissipation PCM: 0.75 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

edium Power Amp. Epitaxial Planar NPN Silicon Transistor

Features 1) High breakdown voltage: VCEO=80V 2) Large current capacity: Ic=700mA

High-gain Amplifier Transistor ( 32V, 0.3A)

Features 1) Darlington connection for a high hFE. (DC current gain = 5000 (Min.) at VCE= 3V, IC = 0.1A.) 2) High input impedance.

RF Amplifier Epitaxial Planar NPN Silicon Transistors

Features 1) Small collector capacitance: Cob = 1.6pF (Typ.) 2) Low base resistance and high gain for good noise response.

TRANSISTOR NPN EPITAXIAL PLANAR

Features 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2) Low rbb, high gain, and excellent noise characteristics.

SILICON NPN TRIPLE DIFFUSED TYPE(PCT PROCESS)

COLOR TV CHROMA OUTPUT APPLICATION FEATURES High Voltage : VCEO = 300V Small Collector output Capcitance : Cob=4.0 pF (max.)

1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE

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TRANSISTORS TO 92L TO-92LS MRT

文件：195.39 Kbytes Page：2 Pages

TRANSISTOR (NPN)

文件：375.57 Kbytes Page：2 Pages

Transistor

双极晶体管

双极型晶体管

TRANSISTORS TO 92L TO-92LS MRT

文件：195.39 Kbytes Page：2 Pages

1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE

文件：88.13 Kbytes Page：2 Pages

High-gain Amplifier Transistor (32V, 0.3A)

文件：48.3 Kbytes Page：2 Pages

封装/外壳：SC-72 成形引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN DARL 32V 0.3A SPT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个