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2SC194晶体管资料
2SC194别名：2SC194三极管、2SC194晶体管、2SC194晶体三极管
2SC194生产厂家：日本索尼公司
2SC194制作材料：Si-NPN
2SC194性质：射频/高频放大 （HF）
2SC194封装形式：直插封装
2SC194极限工作电压：60V
2SC194最大电流允许值：0.01A
2SC194最大工作频率：50MHZ
2SC194引脚数：3
2SC194最大耗散功率：0.25W
2SC194放大倍数：
2SC194图片代号：D-9
2SC194vtest：60
2SC194htest：50000000
- 2SC194atest：0.01
2SC194wtest：0.25
2SC194代换 2SC194用什么型号代替：BF240,BF241,BF254,BF255,BF594,BF595,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NPN SILICON TRANSISTOR DESCRIPTION The 2SC1940 is designed for use driver stages of audio frequency amplifiers. | NEC 瑞萨 |   | ||
NPN SILICON TRANSISTOR DESCRIPTION The 2SC1940 is designed for use driver stages of audio frequency amplifiers. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN SILICON TRANSISTOR DESCRIPTION The 2SC1941 is designed for use driver stages of audio frequency amplifiers. | NEC 瑞萨 | | ||
HIGH VOLTAGE POWER SWITCHING TV HORIZONTAL DEFLECTION OUTPUT SILICON NPN TRIPLE DIFFUSED HIGH VOLTAGE POWER SWITCHING TV HORIZONTAL DEFLECTION OUTPUT | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High breakdown voltage • High speed switching APPLICATIONS • For TV horizontal output applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High breakdown voltage • High speed switching APPLICATIONS • For TV horizontal output applications | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistor DESCRIPTION • High Voltage-VCEx= 1500V(Min.) • Collector Current- lc = 3.0A APPLICATIONS • Designed for use in large screen color deflection circuits . | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High breakdown voltage • High speed switching APPLICATIONS • For TV horizontal output applications | SAVANTIC | | ||
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications) DESCRIPTION 2SC1944 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF bandmobile radio applications. APPLICATIONS 10 to 14W output power class AB amplifiers in HF band. | Mitsubishi 三菱电机 | | ||
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)? 2SC1945 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications. | Mitsubishi 三菱电机 | | ||
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)? DESCRIPTION 2SC1946 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. APPLICATION 25 watts output power amplifiers applications in VHF band. | Mitsubishi 三菱电机 | | ||
NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC1946 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. APPLICATION 25 watts output power amplifiers applications in VHF band. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC1946A is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. APPLICATION 25 watts output power amplifiers in VHF band mobile radio applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)? DESCRIPTION 2SC1946A is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. APPLICATION 25 watts output power amplifiers in VHF band mobile radio applications. | Mitsubishi 三菱电机 | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The 2SC1946Ais Designed for 12.5 V 175 MHz Large-Signal Power Amplifier Applications. FEATURES INCLUDE: • High Common Emitter Power Gain • Output Power = 30 W | ASI | | ||
NPN EPITAXIAL PLANAR TYPE(for industrial use RF power amplifiers on VHF band Mobile radio applications)? DESCRIPTION 2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on VHF band mobile radio applications. FEATURES ● High power gain: Gpe ≥ 10.7dB @VCC = 13.5V, PO = 3.5W, f = 175MHz ● TO-39 metal seeled package for high reliability. ● Em | Mitsubishi 三菱电机 | | ||
HIGH POWER TRANSISTOR SILICON NPN HIGH POWER TRANSISTOR SILICON NPN | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Trans GP BJT NPN 120V 0.05A 3-Pin SP-8 | ETC 知名厂家 | ETC | | |
The 2SC1940 is designed for use in driver stages of audio frequency amplifiers 文件：123.96 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Transistor-Bipolar Power Transistors | RENESAS 瑞萨 | | ||
50W NPN High Power BJT Transistor | DIGITRON | | ||
Silicon NPN Power Transistors 文件：109.47 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：149.99 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：149.99 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
10 to 14 watts output power class AB amplifiers applications in HF band. 文件：332.09 Kbytes Page：4 Pages | ELEFLOW | | ||
25 watts output power ampilflers applications in VHF band. 文件：268.01 Kbytes Page：3 Pages | ELEFLOW | |
2SC194产品属性
- 类型
描述
- 型号
2SC194
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MISUBISHI |
2019+ |
SMD |
6992 |
原厂渠道 可含税出货 |
|||
MIT |
24+ |
原厂封装 |
1400 |
原装现货假一罚十 |
|||
MITSUBISHI/三菱 |
24+ |
299 |
现货供应 |
||||
MITSUBIS |
24+ |
TO-220 |
3500 |
郑重承诺只做原装进口现货 |
|||
MITSUBIS |
25+ |
TO-58 |
1200 |
原厂原装,价格优势 |
|||
MITSUBISHI |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
|||
TOSHIBA |
2023+ |
58000 |
进口原装,现货热卖 |
||||
MITSUBIS |
20+ |
高频管 |
29516 |
高频管全新原装主营-可开原型号增税票 |
|||
MIT |
24+ |
SOP |
6980 |
原装现货,可开13%税票 |
|||
MIT |
ROHS |
6500 |
一级代理 原装正品假一罚十价格优势长期供货 |
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2SC194规格书下载地址
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DdatasheetPDF页码索引
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