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2SC194晶体管资料

  • 2SC194别名:2SC194三极管、2SC194晶体管、2SC194晶体三极管

  • 2SC194生产厂家:日本索尼公司

  • 2SC194制作材料:Si-NPN

  • 2SC194性质:射频/高频放大 (HF)

  • 2SC194封装形式:直插封装

  • 2SC194极限工作电压:60V

  • 2SC194最大电流允许值:0.01A

  • 2SC194最大工作频率:50MHZ

  • 2SC194引脚数:3

  • 2SC194最大耗散功率:0.25W

  • 2SC194放大倍数

  • 2SC194图片代号:D-9

  • 2SC194vtest:60

  • 2SC194htest:50000000

  • 2SC194atest:0.01

  • 2SC194wtest:0.25

  • 2SC194代换 2SC194用什么型号代替:BF240,BF241,BF254,BF255,BF594,BF595,

型号 功能描述 生产厂家 企业 LOGO 操作

NPN SILICON TRANSISTOR

DESCRIPTION The 2SC1940 is designed for use driver stages of audio frequency amplifiers.

NEC

瑞萨

NPN SILICON TRANSISTOR

DESCRIPTION The 2SC1940 is designed for use driver stages of audio frequency amplifiers.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON TRANSISTOR

DESCRIPTION The 2SC1941 is designed for use driver stages of audio frequency amplifiers.

NEC

瑞萨

HIGH VOLTAGE POWER SWITCHING TV HORIZONTAL DEFLECTION OUTPUT

SILICON NPN TRIPLE DIFFUSED HIGH VOLTAGE POWER SWITCHING TV HORIZONTAL DEFLECTION OUTPUT

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • High speed switching APPLICATIONS • For TV horizontal output applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • High speed switching APPLICATIONS • For TV horizontal output applications

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • High speed switching APPLICATIONS • For TV horizontal output applications

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • High Voltage-VCEx= 1500V(Min.) • Collector Current- lc = 3.0A APPLICATIONS • Designed for use in large screen color deflection circuits .

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

50W NPN High Power BJT Transistor

This BJT is packaged in TO-3 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

DIGITRON

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)

DESCRIPTION 2SC1944 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF bandmobile radio applications. APPLICATIONS 10 to 14W output power class AB amplifiers in HF band.

MITSUBISHI

三菱电机

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)?

2SC1945 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications.

MITSUBISHI

三菱电机

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)?

DESCRIPTION 2SC1946 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. APPLICATION 25 watts output power amplifiers applications in VHF band.

MITSUBISHI

三菱电机

NPN EPITAXIAL PLANAR TYPE

DESCRIPTION 2SC1946 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. APPLICATION 25 watts output power amplifiers applications in VHF band.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN EPITAXIAL PLANAR TYPE

DESCRIPTION 2SC1946A is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. APPLICATION 25 watts output power amplifiers in VHF band mobile radio applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)?

DESCRIPTION 2SC1946A is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. APPLICATION 25 watts output power amplifiers in VHF band mobile radio applications.

MITSUBISHI

三菱电机

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The 2SC1946Ais Designed for 12.5 V 175 MHz Large-Signal Power Amplifier Applications. FEATURES INCLUDE: • High Common Emitter Power Gain • Output Power = 30 W

ASI

NPN EPITAXIAL PLANAR TYPE(for industrial use RF power amplifiers on VHF band Mobile radio applications)?

DESCRIPTION 2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on VHF band mobile radio applications. FEATURES ● High power gain: Gpe ≥ 10.7dB @VCC = 13.5V, PO = 3.5W, f = 175MHz ● TO-39 metal seeled package for high reliability. ● Em

MITSUBISHI

三菱电机

HIGH POWER TRANSISTOR SILICON NPN

HIGH POWER TRANSISTOR SILICON NPN

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans GP BJT NPN 120V 0.05A 3-Pin SP-8

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

The 2SC1940 is designed for use in driver stages of audio frequency amplifiers

文件:123.96 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Transistor-Bipolar Power Transistors

RENESAS

瑞萨

Silicon NPN Power Transistors

文件:109.47 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:149.99 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

文件:149.99 Kbytes Page:3 Pages

JMNIC

锦美电子

10 to 14 watts output power class AB amplifiers applications in HF band.

文件:332.09 Kbytes Page:4 Pages

ELEFLOW

25 watts output power ampilflers applications in VHF band.

文件:268.01 Kbytes Page:3 Pages

ELEFLOW

2SC194产品属性

  • 类型

    描述

  • VCEO (V):

    120

  • hFE min.:

    90

  • hFE max.:

    400

  • Pc (W):

    1

  • Production Status:

    EOL

更新时间:2026-5-14 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MIT
23+
NA
20000
全新原装假一赔十
MITSUBIS
20+
高频管
29516
高频管全新原装主营-可开原型号增税票
MITSUBIS
23+
高频管
3200
专营高频管模块,全新原装!
MITSUBI
18+
TO-59
85600
保证进口原装可开17%增值税发票
MITSUBISHI/三菱
24+
299
现货供应
MITSUBIS
25+
TO-58
1200
原厂原装,价格优势
MITSUBISHI
24+
265
MIT
24+
SOP
6980
原装现货,可开13%税票
MIT
25+
TO-58
1200
全新原装现货,价格优势
MITSUBISHI
10+
66
全新 发货1-2天

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