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2SC19晶体管资料

  • 2SC19别名:2SC19三极管、2SC19晶体管、2SC19晶体三极管

  • 2SC19生产厂家:日本东芝公司

  • 2SC19制作材料:Si-NPN

  • 2SC19性质:低频或音频放大 (LF)_开关管 (S)

  • 2SC19封装形式:直插封装

  • 2SC19极限工作电压:40V

  • 2SC19最大电流允许值:0.4A

  • 2SC19最大工作频率:>70MHZ

  • 2SC19引脚数:3

  • 2SC19最大耗散功率:0.6W

  • 2SC19放大倍数

  • 2SC19图片代号:C-40

  • 2SC19vtest:40

  • 2SC19htest:70000100

  • 2SC19atest:0.4

  • 2SC19wtest:0.6

  • 2SC19代换 2SC19用什么型号代替:BC140,BC141,BC300,BC301,BC302,2N2217,2N2218,2N2219,2M3053,3DK4A,

型号 功能描述 生产厂家 企业 LOGO 操作

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SA899 APPLICATIONS ·For high frequency power amplification

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SA899 APPLICATIONS ·For high frequency power amplification

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High breakdown voltage • Large collector power dissipation APPLICATIONS • Color TV horizontal deflection driver

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High breakdown voltage • Large collector power dissipation APPLICATIONS • Color TV horizontal deflection driver

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High breakdown voltage • Large collector power dissipation APPLICATIONS • Color TV horizontal deflection driver

JMNIC

锦美电子

NPN Plastic Encapsulated Transistor

FEATURES ● High Transition Frequency APPLICATIONS ● VHF Amplifier ● Mixer, Local Oscillator

SECOS

喜可士

isc Silicon NPN RF Transistor

DESCRIPTION ·Low Noise ·High Gain Bandwidth Product APPLICATIONS ·Designed for use in VHF amplifier,mixer and local oscillator.

ISC

无锡固电

Silicon NPN Epitaxial Planar

Application • VHF amplifier • Mixer, Local oscillator

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial Planar

Silicon NPN Epitaxial Planar Application UHF TV Tuner, Local oscillator

HITACHIHitachi Semiconductor

日立日立公司

isc Silicon NPN RF Transistor

DESCRIPTION • Low Noise • High Gain Bandwidth Product APPLICATIONS • Designed for VHF TV tuner and local oscillator applications.

ISC

无锡固电

SPECIFICATION TRANSISTOR,DIODES

FEATURES ○ High gain (PG 9dB TYP at 100 MHz) ○ Low Noise (NF 5dB TYP at 100 MHz)

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SA913/913A ·Large collector power dissipation ·High VCEO APPLICATIONS ·Audio frequency high power driver

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SA913/913A ·Large collector power dissipation ·High VCEO APPLICATIONS ·Audio frequency high power driver

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SA913/913A ·Large collector power dissipation ·High VCEO APPLICATIONS ·Audio frequency high power driver

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SA913/913A ·Large collector power dissipation ·High VCEO APPLICATIONS ·Audio frequency high power driver

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SA913/913A ·Large collector power dissipation ·High VCEO APPLICATIONS ·Audio frequency high power driver

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SA913/913A ·Large collector power dissipation ·High VCEO APPLICATIONS ·Audio frequency high power driver

SAVANTIC

Silicon NPN Triple Diffused

Application • High frequency high voltage amplifier • Video output

HITACHIHitachi Semiconductor

日立日立公司

TO-3 Power Package Transistors (NPN)

TO-3 Power Package Transistors (NPN)

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • High speed switching APPLICATIONS • For TV horizontal output applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • High speed switching APPLICATIONS • For TV horizontal output applications

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • High speed switching APPLICATIONS • For TV horizontal output applications

ISC

无锡固电

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● General Purpose Switching Application

JIANGSU

长电科技

NPN Transistors

■ Features ● Collector Current Capability IC=20mA ● Collector Emitter Voltage VCEO=30V ● General Purpose Switching Application

KEXIN

科信电子

NPN Plastic Encapsulated Transistor

FEATURES • General purpose switching and amplification.

SECOS

喜可士

丝印代码:C1923;TO-92 Plastic-Encapsulate Transistors

FEATURES General Purpose Switching Application

DGNJDZ

南晶电子

TRANSISTOR (HIGH FREQUENCY, FM, RF, MIX, IF AMPLIFIER APPLICATIONS)

High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications ● Small reverse transfer capacitance: Cre = 0.7 pF (typ.) ● Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)

TOSHIBA

东芝

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features Small reverse transfer capacitance, low noise figure. Applications High frequency, FM,RF,MIX,IF amplifier applications.

FOSHAN

蓝箭电子

Power Silicon NPN Transistor

Features • General Purpose Switching Application • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Halogen free available upon request by adding suffix -HF

MCC

NPN Transistors

■ Features ● Collector Current Capability IC=20mA ● Collector Emitter Voltage VCEO=30V ● General Purpose Switching Application

KEXIN

科信电子

NPN Transistors

■ Features ● Collector Current Capability IC=20mA ● Collector Emitter Voltage VCEO=30V ● General Purpose Switching Application

KEXIN

科信电子

Power Silicon NPN Transistor

Features • General Purpose Switching Application • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Halogen free available upon request by adding suffix -HF

MCC

丝印代码:C1923;TO-92 Plastic-Encapsulate Transistors

FEATURES General Purpose Switching Application

DGNJDZ

南晶电子

Power Silicon NPN Transistor

Features • General Purpose Switching Application • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Halogen free available upon request by adding suffix -HF

MCC

NPN Transistors

■ Features ● Collector Current Capability IC=20mA ● Collector Emitter Voltage VCEO=30V ● General Purpose Switching Application

KEXIN

科信电子

NPN SILICON EPITAXIAL DUAL TRANSISTOR

DESCRIPTION The 2SC1926 is an NPN silicon epitaxial dual transistor that consists of two chips equivalent to the 2SC1275, and is designed for differential amplifier and ultra-high-speed switching applications.

RENESAS

瑞萨

NPN SILICON EPITAXIAL DUAL TRANSISTOR

DESCRIPTION The 2SC1927 is an NPN silicon epitaxial dual transistor that consists of two chips equivalent to the 2SC1275, and is designed for differential amplifier and ultra-high-speed switching applications.

RENESAS

瑞萨

NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE

DESCRIPTION The 2SC1927 is an NPN silicon epitaxial dual transistor that consists of two chips equivalent to the 2SC1275, and is designed for differential amplifier and ultra-high-speed switching applications.

NEC

瑞萨

SI NPN EPITAXIAL PLANAR

SI NPN EPITAXIAL PLANAR

PANASONIC

松下

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High VCEO ·Large PC APPLICATIONS ·AF output for direct main operation TV

ISC

无锡固电

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High VCEO ·Large PC APPLICATIONS ·AF output for direct main operation TV

SAVANTIC

NPN SILICON TRANSISTOR

DESCRIPTION The 2SC1940 is designed for use driver stages of audio frequency amplifiers.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON TRANSISTOR

DESCRIPTION The 2SC1940 is designed for use driver stages of audio frequency amplifiers.

NEC

瑞萨

NPN SILICON TRANSISTOR

DESCRIPTION The 2SC1941 is designed for use driver stages of audio frequency amplifiers.

NEC

瑞萨

HIGH VOLTAGE POWER SWITCHING TV HORIZONTAL DEFLECTION OUTPUT

SILICON NPN TRIPLE DIFFUSED HIGH VOLTAGE POWER SWITCHING TV HORIZONTAL DEFLECTION OUTPUT

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • High speed switching APPLICATIONS • For TV horizontal output applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • High speed switching APPLICATIONS • For TV horizontal output applications

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • High speed switching APPLICATIONS • For TV horizontal output applications

SAVANTIC

Silicon NPN Power Transistor

DESCRIPTION • High Voltage-VCEx= 1500V(Min.) • Collector Current- lc = 3.0A APPLICATIONS • Designed for use in large screen color deflection circuits .

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)

DESCRIPTION 2SC1944 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF bandmobile radio applications. APPLICATIONS 10 to 14W output power class AB amplifiers in HF band.

MITSUBISHI

三菱电机

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)?

2SC1945 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications.

MITSUBISHI

三菱电机

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)?

DESCRIPTION 2SC1946 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. APPLICATION 25 watts output power amplifiers applications in VHF band.

MITSUBISHI

三菱电机

NPN EPITAXIAL PLANAR TYPE

DESCRIPTION 2SC1946 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. APPLICATION 25 watts output power amplifiers applications in VHF band.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN EPITAXIAL PLANAR TYPE

DESCRIPTION 2SC1946A is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. APPLICATION 25 watts output power amplifiers in VHF band mobile radio applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)?

DESCRIPTION 2SC1946A is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. APPLICATION 25 watts output power amplifiers in VHF band mobile radio applications.

MITSUBISHI

三菱电机

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The 2SC1946Ais Designed for 12.5 V 175 MHz Large-Signal Power Amplifier Applications. FEATURES INCLUDE: • High Common Emitter Power Gain • Output Power = 30 W

ASI

NPN EPITAXIAL PLANAR TYPE(for industrial use RF power amplifiers on VHF band Mobile radio applications)?

DESCRIPTION 2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on VHF band mobile radio applications. FEATURES ● High power gain: Gpe ≥ 10.7dB @VCC = 13.5V, PO = 3.5W, f = 175MHz ● TO-39 metal seeled package for high reliability. ● Em

MITSUBISHI

三菱电机

HIGH POWER TRANSISTOR SILICON NPN

HIGH POWER TRANSISTOR SILICON NPN

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SA914 ·High VCEO APPLICATIONS ·For low-frequency power pre-amplification

SAVANTIC

SI PNP EPITAXIAL PLANAR

Silicon PNP epitaxial planar type For audio system/pli drive Complementary to 2SC1953 ■Features •A complementary pair with 2SC1953, is optimum for the pre driver stage of a 60 W to 100 W output amplifier •TO-126B package which requires no insulation plate for installation to the he

PANASONIC

松下

2SC19产品属性

  • 类型

    描述

  • Maximum Transition Frequency:

    1000(Typ)MHz

  • Maximum Power Dissipation:

    300mW

  • Maximum Operating Temperature:

    150°C

  • Maximum Emitter Base Voltage:

    2V

  • Maximum DC Collector Current:

    0.05A

  • Maximum Collector Emitter Voltage:

    19V

  • Maximum Collector Emitter Saturation Voltage:

    1@4mA@20mAV

  • Maximum Collector Base Voltage:

    30V

  • Material:

    Si

  • Configuration:

    Single

  • Category:

    Bipolar Small Signal

更新时间:2026-5-14 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MIT
2026+
TO-220
51848
百分百原装现货 实单必成 欢迎询价
MITSUBIS
23+
TO-220
950
专营高频管模块,全新原装!
MITSUBI
17+
TO220
60000
保证进口原装可开17%增值税发票
MITSUBISHI/三菱
24+
TO220
40
绝对原厂原装,长期优势可定货
MIT
24+
TO-220
2500
全新原装环保现货
MIT
25+
TO-220
880000
明嘉莱只做原装正品现货
MITSUBISHI
24+
TO220
2148
MIT
26+
SOT-23
86720
全新原装正品价格最实惠 假一赔百
MITSUBIS
23+
TO-220
3000
原装正品假一罚百!可开增票!
MITSUBISHI
2023+
TO-220-3
50000
原装现货

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