Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SA899 APPLICATIONS ·For high frequency power amplification

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SA899 APPLICATIONS ·For high frequency power amplification

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High breakdown voltage • Large collector power dissipation APPLICATIONS • Color TV horizontal deflection driver

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High breakdown voltage • Large collector power dissipation APPLICATIONS • Color TV horizontal deflection driver

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High breakdown voltage • Large collector power dissipation APPLICATIONS • Color TV horizontal deflection driver

isc Silicon NPN RF Transistor

DESCRIPTION ·Low Noise ·High Gain Bandwidth Product APPLICATIONS ·Designed for use in VHF amplifier,mixer and local oscillator.

Silicon NPN Epitaxial Planar

Application • VHF amplifier • Mixer, Local oscillator

NPN Plastic Encapsulated Transistor

FEATURES ● High Transition Frequency APPLICATIONS ● VHF Amplifier ● Mixer, Local Oscillator

Silicon NPN Epitaxial Planar

Silicon NPN Epitaxial Planar Application UHF TV Tuner, Local oscillator

isc Silicon NPN RF Transistor

DESCRIPTION • Low Noise • High Gain Bandwidth Product APPLICATIONS • Designed for VHF TV tuner and local oscillator applications.

SPECIFICATION TRANSISTOR,DIODES

FEATURES ○ High gain (PG 9dB TYP at 100 MHz) ○ Low Noise (NF 5dB TYP at 100 MHz)

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SA913/913A ·Large collector power dissipation ·High VCEO APPLICATIONS ·Audio frequency high power driver

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SA913/913A ·Large collector power dissipation ·High VCEO APPLICATIONS ·Audio frequency high power driver

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SA913/913A ·Large collector power dissipation ·High VCEO APPLICATIONS ·Audio frequency high power driver

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SA913/913A ·Large collector power dissipation ·High VCEO APPLICATIONS ·Audio frequency high power driver

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SA913/913A ·Large collector power dissipation ·High VCEO APPLICATIONS ·Audio frequency high power driver

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SA913/913A ·Large collector power dissipation ·High VCEO APPLICATIONS ·Audio frequency high power driver

Silicon NPN Triple Diffused

Application • High frequency high voltage amplifier • Video output

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • High speed switching APPLICATIONS • For TV horizontal output applications

TO-3 Power Package Transistors (NPN)

TO-3 Power Package Transistors (NPN)

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • High speed switching APPLICATIONS • For TV horizontal output applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • High speed switching APPLICATIONS • For TV horizontal output applications

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● General Purpose Switching Application

NPN Transistors

■ Features ● Collector Current Capability IC=20mA ● Collector Emitter Voltage VCEO=30V ● General Purpose Switching Application

NPN Plastic Encapsulated Transistor

FEATURES • General purpose switching and amplification.

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features Small reverse transfer capacitance, low noise figure. Applications High frequency, FM,RF,MIX,IF amplifier applications.

TRANSISTOR (HIGH FREQUENCY, FM, RF, MIX, IF AMPLIFIER APPLICATIONS)

High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications ● Small reverse transfer capacitance: Cre = 0.7 pF (typ.) ● Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)

TO-92 Plastic-Encapsulate Transistors

FEATURES General Purpose Switching Application

Power Silicon NPN Transistor

Features • General Purpose Switching Application • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Halogen free available upon request by adding suffix -HF

NPN Transistors

■ Features ● Collector Current Capability IC=20mA ● Collector Emitter Voltage VCEO=30V ● General Purpose Switching Application

NPN Transistors

■ Features ● Collector Current Capability IC=20mA ● Collector Emitter Voltage VCEO=30V ● General Purpose Switching Application

Power Silicon NPN Transistor

Features • General Purpose Switching Application • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Halogen free available upon request by adding suffix -HF

TO-92 Plastic-Encapsulate Transistors

FEATURES General Purpose Switching Application

Power Silicon NPN Transistor

Features • General Purpose Switching Application • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Halogen free available upon request by adding suffix -HF

NPN Transistors

■ Features ● Collector Current Capability IC=20mA ● Collector Emitter Voltage VCEO=30V ● General Purpose Switching Application

NPN SILICON EPITAXIAL DUAL TRANSISTOR

DESCRIPTION The 2SC1926 is an NPN silicon epitaxial dual transistor that consists of two chips equivalent to the 2SC1275, and is designed for differential amplifier and ultra-high-speed switching applications.

NPN SILICON EPITAXIAL DUAL TRANSISTOR

DESCRIPTION The 2SC1927 is an NPN silicon epitaxial dual transistor that consists of two chips equivalent to the 2SC1275, and is designed for differential amplifier and ultra-high-speed switching applications.

NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE

DESCRIPTION The 2SC1927 is an NPN silicon epitaxial dual transistor that consists of two chips equivalent to the 2SC1275, and is designed for differential amplifier and ultra-high-speed switching applications.

SI NPN EPITAXIAL PLANAR

SI NPN EPITAXIAL PLANAR

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High VCEO ·Large PC APPLICATIONS ·AF output for direct main operation TV

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High VCEO ·Large PC APPLICATIONS ·AF output for direct main operation TV

NPN SILICON TRANSISTOR

DESCRIPTION The 2SC1940 is designed for use driver stages of audio frequency amplifiers.

NPN SILICON TRANSISTOR

DESCRIPTION The 2SC1940 is designed for use driver stages of audio frequency amplifiers.

NPN SILICON TRANSISTOR

DESCRIPTION The 2SC1941 is designed for use driver stages of audio frequency amplifiers.

HIGH VOLTAGE POWER SWITCHING TV HORIZONTAL DEFLECTION OUTPUT

SILICON NPN TRIPLE DIFFUSED HIGH VOLTAGE POWER SWITCHING TV HORIZONTAL DEFLECTION OUTPUT

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • High speed switching APPLICATIONS • For TV horizontal output applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • High speed switching APPLICATIONS • For TV horizontal output applications

Silicon NPN Power Transistor

DESCRIPTION • High Voltage-VCEx= 1500V(Min.) • Collector Current- lc = 3.0A APPLICATIONS • Designed for use in large screen color deflection circuits .

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • High speed switching APPLICATIONS • For TV horizontal output applications

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)

DESCRIPTION 2SC1944 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF bandmobile radio applications. APPLICATIONS 10 to 14W output power class AB amplifiers in HF band.

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)?

2SC1945 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications.

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)?

DESCRIPTION 2SC1946 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. APPLICATION 25 watts output power amplifiers applications in VHF band.

NPN EPITAXIAL PLANAR TYPE

DESCRIPTION 2SC1946 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. APPLICATION 25 watts output power amplifiers applications in VHF band.

NPN EPITAXIAL PLANAR TYPE

DESCRIPTION 2SC1946A is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. APPLICATION 25 watts output power amplifiers in VHF band mobile radio applications.

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The 2SC1946Ais Designed for 12.5 V 175 MHz Large-Signal Power Amplifier Applications. FEATURES INCLUDE: • High Common Emitter Power Gain • Output Power = 30 W

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)?

DESCRIPTION 2SC1946A is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. APPLICATION 25 watts output power amplifiers in VHF band mobile radio applications.

NPN EPITAXIAL PLANAR TYPE(for industrial use RF power amplifiers on VHF band Mobile radio applications)?

DESCRIPTION 2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on VHF band mobile radio applications. FEATURES ● High power gain: Gpe ≥ 10.7dB @VCC = 13.5V, PO = 3.5W, f = 175MHz ● TO-39 metal seeled package for high reliability. ● Em

HIGH POWER TRANSISTOR SILICON NPN

HIGH POWER TRANSISTOR SILICON NPN

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SA914 ·High VCEO APPLICATIONS ·For low-frequency power pre-amplification

SI PNP EPITAXIAL PLANAR

Silicon PNP epitaxial planar type For audio system/pli drive Complementary to 2SC1953 ■Features •A complementary pair with 2SC1953, is optimum for the pre driver stage of a 60 W to 100 W output amplifier •TO-126B package which requires no insulation plate for installation to the he