Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification)

* Low collector-emitter saturation voltage VCE(sat) * Complementary pair with 2SA0683, 2SA0684 For low-frequency power amplification and driver amplification Complementary to 2SA0683, 2SA0684

NPN General Purpose Transistors

NPN General Purpose Transistors P/b Lead(Pb) - Free

NPN EPITAXIAL PLANAR TRANSISTOR

■ DESCRIPTION The UTC 2SC1384 is power amplifier and driver. ■ FEATURES * Low VCE(SAT) * 2~3W output in complementary pair with 2SA684

Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURE Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 2SC1383: 30 V 2SC1384: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

NPN Silicon General Purpose Transistor

FEATURE Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 2SC1383: 30 V 2SC1384: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃