丝印代码：C1383；TO-92L Plastic-Encapsulate Transistors

FEATURES Low Collector to Emitter Saturation Voltage VCE(sat). Complementary Pair with 2SA0683 and 2SA0684.

Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURE Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 2SC1383: 30 V 2SC1384: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification)

* Low collector-emitter saturation voltage VCE(sat) * Complementary pair with 2SA0683, 2SA0684 For low-frequency power amplification and driver amplification Complementary to 2SA0683, 2SA0684

NPN General Purpose Transistors

NPN General Purpose Transistors P/b Lead(Pb) - Free

NPN Silicon General Purpose Transistor

FEATURE Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 2SC1383: 30 V 2SC1384: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

NPN Silicon General Purpose Transistor

FEATURE • Low collector to emitter saturation voltage VCE(sat). • Complementary pair with 2SA683 and 2SA684.