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型号 功能描述 生产厂家 企业 LOGO 操作
2SC1383L

NPN Silicon General Purpose Transistor

FEATURE • Low collector to emitter saturation voltage VCE(sat). • Complementary pair with 2SA683 and 2SA684.

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2SC1383L

Small Signal Transistor

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NPN Silicon General Purpose Transistor

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NPN Silicon General Purpose Transistor

文件:675.26 Kbytes Page:2 Pages

SECOS

喜可士

Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURE Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 2SC1383: 30 V 2SC1384: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TEL

Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification)

* Low collector-emitter saturation voltage VCE(sat) * Complementary pair with 2SA0683, 2SA0684 For low-frequency power amplification and driver amplification Complementary to 2SA0683, 2SA0684

PANASONIC

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NPN General Purpose Transistors

NPN General Purpose Transistors P/b Lead(Pb) - Free

WEITRON

NPN Silicon General Purpose Transistor

FEATURE Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 2SC1383: 30 V 2SC1384: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

SECOS

喜可士

2SC1383L产品属性

  • 类型

    描述

  • Type:

    NPN

  • PD (mW):

    1000

  • VCBO (V):

    30

  • VCEO (V):

    25

  • IC (mA):

    1000

  • hFE_Min/Max:

    85/340

  • hFE_IC(mA)/VCE(V):

    500/10

  • VCE(sat)(V):

    0.4

  • VCE(sat)_IC/IB(mA):

    500/50

  • fT (MHz):

    200

  • Package:

    TO-92L

更新时间:2026-8-1 16:40:00
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十年专业专注 优势渠道商正品保证

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