位置:首页 > IC中文资料 > 2SC12

2SC12晶体管资料

  • 2SC12别名:2SC12三极管、2SC12晶体管、2SC12晶体三极管

  • 2SC12生产厂家:日本东芝公司

  • 2SC12制作材料:Si-NPN

  • 2SC12性质:低频或音频放大 (LF)_开关管 (S)

  • 2SC12封装形式:直插封装

  • 2SC12极限工作电压:60V

  • 2SC12最大电流允许值:0.25A

  • 2SC12最大工作频率:13MHZ

  • 2SC12引脚数:3

  • 2SC12最大耗散功率:0.18W

  • 2SC12放大倍数

  • 2SC12图片代号:D-9

  • 2SC12vtest:60

  • 2SC12htest:13000000

  • 2SC12atest:0.25

  • 2SC12wtest:0.18

  • 2SC12代换 2SC12用什么型号代替:BC140,BC141,BC300,BC301,BC302,2N3053,2N2217,2N2218,2N2219,3CG182A,

型号 功能描述 生产厂家 企业 LOGO 操作

丝印代码:2SC1213;TO-92 Plastic-Encapsulate Transistors

FEATURES Low Frequency Amplifier Complementary Pair With 2SA673

DGNJDZ

南晶电子

丝印代码:2SC1213A;TO-92 Plastic-Encapsulate Transistors

FEATURES ® Low Frequency Amplifier ® Complementary Pair with 25A673A

DGNJDZ

南晶电子

丝印代码:2SC1213A;TO-92 Plastic-Encapsulate Transistors

FEATURES ® Low Frequency Amplifier ® Complementary Pair with 25A673A

DGNJDZ

南晶电子

丝印代码:2SC1213;TO-92 Plastic-Encapsulate Transistors

FEATURES Low Frequency Amplifier Complementary Pair With 2SA673

DGNJDZ

南晶电子

MICRO TRANSISTER

○ UHF~S Band Power Amplifier Applications ○ UHF~S Band Oscillator Applications • Stable Operation, High Collector Efficiency • High Oscillation Power • Coaxial Type Envelope

TOSHIBA

东芝

Medium Power Amplifiers and Switches

Medium Power Amplifiers and Switches TO-92 Plastic-Encapsulate Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Epitaxial

Application Low frequency power amplifier

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SA743/743A APPLICATIONS ·For low frequency power amplifier applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SA743/743A APPLICATIONS ·For low frequency power amplifier applications

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SA743/743A APPLICATIONS ·For low frequency power amplifier applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SA743/743A APPLICATIONS ·For low frequency power amplifier applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SA743/743A APPLICATIONS ·For low frequency power amplifier applications

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SA743/743A APPLICATIONS ·For low frequency power amplifier applications

ISC

无锡固电

Silicon NPN Epitaxial

Application Low frequency power amplifier

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Application • Low frequency amplifier • Complementary pair with 2SA673 and 2SA673A

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Application • Low frequency amplifier • Complementary pair with 2SA673 and 2SA673A

RENESAS

瑞萨

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for low frequency amplifier applications.

DCCOM

道全

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Frequency Amplifier ● Complementary Pair With 2SA673

JIANGSU

长电科技

NPN Silicon General Purpose Transistor

FEATURES • Low frequency amplifier • Complementary pair with 2SA673 and 2SA673A

SECOS

喜可士

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features Complementary pair with 2SA673(A). Applications High frequency amplifier.

FOSHAN

蓝箭电子

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURE Power dissipation PCM: 0.4 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 2SC1213 : 35 V 2SC1213A : 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TEL

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features Complementary pair with 2SA673(A). Applications High frequency amplifier.

FOSHAN

蓝箭电子

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURE Power dissipation PCM: 0.4 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 2SC1213 : 35 V 2SC1213A : 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TEL

NPN Silicon General Purpose Transistor

FEATURES • Low frequency amplifier • Complementary pair with 2SA673 and 2SA673A

SECOS

喜可士

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Frequency Amplifier ● Complementary Pair with 2SA673A

JIANGSU

长电科技

SILICON TRANSISTOR

SILICON TRANSISTOR

MICRO-ELECTRONICS

Silicon NPN Epitaxial

Application • Low frequency amplifier • Complementary pair with 2SA673 and 2SA673A

RENESAS

瑞萨

Silicon NPN Epitaxial

Application • Low frequency amplifier • Complementary pair with 2SA673 and 2SA673A

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Application • Low frequency amplifier • Complementary pair with 2SA673 and 2SA673A

RENESAS

瑞萨

Silicon NPN Epitaxial

Application • Low frequency amplifier • Complementary pair with 2SA673 and 2SA673A

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Application • Low frequency amplifier • Complementary pair with 2SA673 and 2SA673A

RENESAS

瑞萨

Silicon NPN Epitaxial Low frequency amplifier

Application Low frequency amplifier

HITACHIHitachi Semiconductor

日立日立公司

Transistors LOW FREQUENCY LOW NOISE AMPLIFIER

[USHA] LOW FREQUENCY LOW NOISE AMPLIFIER • Collector-Base Voltage VCBO = 50 V • Low Noise Level NL = 40 mV (Max)

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Epitaxial Planar Type

Medium Power Amplifier Complementary 2SA699,2SA699A

PANASONIC

松下

Silicon NPN Power Transistors

DESCRIPTION ·With TO-202 package ·Complement to type 2SA699/699A APPLICATIONS ·For medium power amplifier applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-202 package ·Complement to type 2SA699/699A APPLICA TIONS ·For medium power amplifier applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-202 package ·Complement to type 2SA699/699A APPLICA TIONS ·For medium power amplifier applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-202 package ·Complement to type 2SA699/699A APPLICATIONS ·For medium power amplifier applications

ISC

无锡固电

Silicon NPN Epitaxial Planar Type

Medium Power Amplifier Complementary 2SA699,2SA699A

PANASONIC

松下

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·Suitable for use in clocked voltatge converters

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·Suitable for use in clocked voltatge converters

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-66 package ·High collector-emitter voltage : VCEO=300V APPLICATIONS ·For use in line-operated color TV chroma output circuits and sound output circuits.

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-66 package ·High collector-emitter voltage : VCEO=300V APPLICATIONS ·For use in line-operated color TV chroma output circuits and sound output circuits.

ISC

无锡固电

High Voltage Transistors

High Voltage Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High voltage ,high speed APPLICATIONS • For TV horizontal deflection output applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High voltage ,high speed APPLICATIONS • For TV horizontal deflection output applications

SAVANTIC

TRANSISTOR

文件:192.33 Kbytes Page:3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Power Transistors

文件:106.36 Kbytes Page:4 Pages

SAVANTIC

Trans GP BJT NPN 80V 1A 3-Pin TO-126 Mod

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

文件:185.06 Kbytes Page:4 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

文件:185.06 Kbytes Page:4 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

文件:106.36 Kbytes Page:4 Pages

SAVANTIC

Silicon NPN Epitaxial

文件:154.36 Kbytes Page:5 Pages

RENESAS

瑞萨

晶体管

JSCJ

长晶科技

Transistor

RENESAS

瑞萨

General Purpose Transistor

文件:283.42 Kbytes Page:2 Pages

SECOS

喜可士

TRANSISTOR (NPN)

文件:132.98 Kbytes Page:1 Pages

WINNERJOIN

永而佳

General Purpose Transistor

文件:283.42 Kbytes Page:2 Pages

SECOS

喜可士

General Purpose Transistor

文件:283.42 Kbytes Page:2 Pages

SECOS

喜可士

TRANSISTOR (NPN)

文件:132.98 Kbytes Page:1 Pages

WINNERJOIN

永而佳

2SC12产品属性

  • 类型

    描述

  • Maximum Transition Frequency:

    160(Typ)MHz

  • Maximum Power Dissipation:

    750mW

  • Maximum Operating Temperature:

    150°C

  • Maximum Emitter Base Voltage:

    4V

  • Maximum DC Collector Current:

    1A

  • Maximum Collector Emitter Voltage:

    80V

  • Maximum Collector Emitter Saturation Voltage:

    1.5@0.1A@1AV

  • Maximum Collector Base Voltage:

    50V

  • Material:

    Si

  • Configuration:

    Single

  • Category:

    Bipolar Power

更新时间:2026-5-14 19:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
专业铁帽
CAN3
67500
铁帽原装主营-可开原型号增税票
TOSHIBA/东芝
2450+
SOT89
6540
只做原装正品现货或订货!终端客户免费申请样品!
TOSHIBA
24+
SOT89
1000
NEC
25+
CAN3
2987
只售原装自家现货!诚信经营!欢迎来电
NEC
24+
CAN
6980
原装现货,可开13%税票
RENESAS
11+
TO-92
614
全新 发货1-2天
HITACHI
TO-92
29000
一级代理 原装正品假一罚十价格优势长期供货
NEC
CAN
2251
优势库存现正热卖
RENESAS
25+
TO-92
1395
百分百原装正品 真实公司现货库存 本公司只做原装 可
T/NEC
2023+
CAN
50000
全新原装现货

2SC12数据表相关新闻