For Power Amplification And Switching

Silicon PNP epitaxial planar type darlington For power amplification and switching Complementary to 2SD1276 and 2SD1276A ■ Features • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw

Silicon PNP epitaxial planar type Darlington(For power amplification and switching)

Silicon PNP epitaxial planar type darlington For power amplification and switching Complementary to 2SD1276 and 2SD1276A ■ Features • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·High DC Current Gain-: hFE= 2000(Min.)@IC= -3A ·High Speed Switching ·Complement to Type 2SD1276A APPLICATIONS ·Designed for power amplifier and switching applications.

For Power Amplification And Switching

Silicon PNP epitaxial planar type darlington For power amplification and switching Complementary to 2SD1276 and 2SD1276A ■ Features • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw

Silicon PNP epitaxial planar type Darlington(For power amplification and switching)

Silicon PNP epitaxial planar type darlington For power amplification and switching Complementary to 2SD1276 and 2SD1276A ■ Features • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw