For Power Switching

Silicon PNP epitaxial planar type For power switching Complementary to 2SD1269 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be installed to the heat si

isc Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@ |c=-3A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V (Min) • Good Linearity of hFE • Complement to Type 2SD1269 APPLICATIONS • Designed for power amplification.

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Large collector current IC • Low collector saturation voltage • Complement to type 2SD1269 APPLICATIONS • For power switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Large collector current IC • Low collector saturation voltage • Complement to type 2SD1269 APPLICATIONS • For power switching applications

Silicon PNP Power Transistors

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