PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SB798 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits.

POWER TRANSISTOR

DESCRIPTION The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. FEATURES * Low Collector Saturation Voltage: VCE(sat)

PNP Silicon Epitaxial Transistor

■ Features ● Low Collector Saturation Voltage: VCE(sat)

Silicon PNP transistor in a SOT-89 Plastic Package

Description Silicon PNP transistor in a SOT-89 Plastic Package. Features Low VCE(sat), excellent hFE linearity, complements the 2SD999. Applications Audio frequency power amplifier applications.

POWER TRANSISTOR

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