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2SB79晶体管资料

2SB79别名：2SB79三极管、2SB79晶体管、2SB79晶体三极管
2SB79生产厂家：日本日立公司
2SB79制作材料：Ge-PNP
2SB79性质：低频或音频放大（LF）
2SB79封装形式：直插封装
2SB79极限工作电压：25V
2SB79最大电流允许值：0.15A
2SB79最大工作频率：<1MHZ或未知
2SB79引脚数：3
2SB79最大耗散功率：0.25W
2SB79放大倍数：
2SB79图片代号：C-37
2SB79vtest：25
2SB79htest：999900
2SB79atest：0.15
2SB79wtest：0.25

2SB79代换 2SB79用什么型号代替：AC122,AC125,AC126,AC128,AC151,AC153,AC188,2N1191,2N1192,2N1193,2N1194,2SB54,2SB56,3AX52C,

型号	功能描述	生产厂家企业	LOGO
2SB790	Silicon PNP epitaxial planer type(Silicon PNP epitaxial planer type) For low-frequency output amplification Complementary to 2SD969 ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.	PANASONIC 松下	PANASONIC
2SB791	Silicon PNP Epitaxial Application Medium speed and power switching complementary pair with 2SD970(K)	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SB791	Low Saturation Voltage DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • High DC Current Gain : hFE= 1000(Min) @IC= -4A • Low Saturation Voltage • Complement to Type 2SD970 APPLICATIONS • Designed for medium speed and power switching applications	ISC 无锡固电	ISC
2SB791K	Silicon PNP Epitaxial Application Medium speed and power switching complementary pair with 2SD970(K)	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SB792	Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification) For high breakdown voltage low-noise amplification Complementary to 2SD814 ■Features ● High collector to emitter voltage VCEO. ● Low noise voltage NV. ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packin	PANASONIC 松下	PANASONIC
2SB792	For High Breakdown Voltage Low-noise Amplification For high breakdown voltage low-noise amplification Complementary to 2SD814 ■Features ● High collector to emitter voltage VCEO. ● Low noise voltage NV. ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packin	PANASONIC 松下	PANASONIC
2SB792	Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD814 ■Features ● High collector to emitter voltage VCEO. ● Low noise voltage NV. ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packin	PANASONIC 松下	PANASONIC
2SB792	Silicon PNP Epitaxial Planar Type Features High collector-emitter voltage VCEO Low noise voltage NV	KEXIN 科信电子	KEXIN
2SB792A	For High Breakdown Voltage Low-noise Amplification For high breakdown voltage low-noise amplification Complementary to 2SD814 ■Features ● High collector to emitter voltage VCEO. ● Low noise voltage NV. ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packin	PANASONIC 松下	PANASONIC
2SB792A	Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD814 ■Features ● High collector to emitter voltage VCEO. ● Low noise voltage NV. ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packin	PANASONIC 松下	PANASONIC
2SB792A	Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification) For high breakdown voltage low-noise amplification Complementary to 2SD814 ■Features ● High collector to emitter voltage VCEO. ● Low noise voltage NV. ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packin	PANASONIC 松下	PANASONIC
2SB792A	Silicon PNP Epitaxial Planar Type Features High collector-emitter voltage VCEO Low noise voltage NV	KEXIN 科信电子	KEXIN
2SB794	PNP SILICON DARLINGTON POWER TRANSISTORS SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N	NEC 瑞萨	NEC
2SB794	Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type 2SD985 2SD986 APPLICATIONS • For use in operating from IC without predriver ,such as hammer driver	JMNIC 锦美电子	JMNIC
2SB794	Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type 2SD985 2SD986 APPLICATIONS • For use in operating from IC without predriver ,such as hammer driver	ISC 无锡固电	ISC
2SB794	Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type 2SD985 2SD986 APPLICATIONS • For use in operating from IC without predriver ,such as hammer driver	SAVANTIC	SAVANTIC
2SB795	Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type 2SD985 2SD986 APPLICATIONS • For use in operating from IC without predriver ,such as hammer driver	SAVANTIC	SAVANTIC
2SB795	Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type 2SD985 2SD986 APPLICATIONS • For use in operating from IC without predriver ,such as hammer driver	ISC 无锡固电	ISC
2SB795	PNP SILICON DARLINGTON POWER TRANSISTORS SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N	NEC 瑞萨	NEC
2SB798	PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SB798 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits.	NEC 瑞萨	NEC
2SB798	POWER TRANSISTOR DESCRIPTION The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. FEATURES * Low Collector Saturation Voltage: VCE(sat)	UTC 友顺	UTC
2SB798	SILICON TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD	RENESAS 瑞萨	RENESAS
2SB798	PNP Silicon Epitaxial Transistor ■ Features ● Low Collector Saturation Voltage: VCE(sat)	KEXIN 科信电子	KEXIN
2SB798	Silicon PNP transistor in a SOT-89 Plastic Package Description Silicon PNP transistor in a SOT-89 Plastic Package. Features Low VCE(sat), excellent hFE linearity, complements the 2SD999. Applications Audio frequency power amplifier applications.	FOSHAN 蓝箭电子	FOSHAN
2SB798	PNP-Silicon General use Transistors PNP-Silicon General use Transistors 1W 、 1.0A、 25V Applications： Can be used for switching and amplifying in various electrical and electronic circuit.	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SB799	PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N	NEC 瑞萨	NEC
2SB799	PNP Silicon Epitaxial Transistor ■ Features ● Low Collector Saturation Voltage: VCE(sat)	KEXIN 科信电子	KEXIN
2SB790	For Low-Frequency Output Application 文件：70.32 Kbytes Page：3 Pages	PANASONIC 松下	PANASONIC
2SB791	Silicon PNP Epitaxial 文件：151.15 Kbytes Page：7 Pages	RENESAS 瑞萨	RENESAS
2SB791	Transistors>Switching/Bipolar	RENESAS 瑞萨	RENESAS
2SB791	Trans Darlington PNP 120V 8A 3-Pin(3+Tab) TO-220AB	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB791(K)	Silicon PNP Darlington Transistor	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SB792_15	PNP Transistors 文件：926.31 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB792-3_15	PNP Transistors 文件：962.49 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB792A_15	PNP Transistors 文件：934.69 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB792A-3_15	PNP Transistors 文件：967.5 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB792A-HF_15	PNP Transistors 文件：952.28 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB792A-HF-3_15	PNP Transistors 文件：1.02676 Mbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB792A-R	PNP Transistors 文件：934.69 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB792A-R	PNP Transistors 文件：967.5 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB792A-R-HF	PNP Transistors 文件：1.02676 Mbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB792A-R-HF	PNP Transistors 文件：952.28 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB792A-S	PNP Transistors 文件：967.5 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB792A-S	PNP Transistors 文件：934.69 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB792A-S-HF	PNP Transistors 文件：952.28 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB792A-S-HF	PNP Transistors 文件：1.02676 Mbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB792-HF_15	PNP Transistors 文件：945.3 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB792-HF-3_15	PNP Transistors 文件：1.01729 Mbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB792-R	PNP Transistors 文件：962.49 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB792-R	PNP Transistors 文件：926.31 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB792-R-HF	PNP Transistors 文件：945.3 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB792-R-HF	PNP Transistors 文件：1.01729 Mbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB792-S	PNP Transistors 文件：926.31 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB792-S	PNP Transistors 文件：962.49 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB792-S-HF	PNP Transistors 文件：945.3 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB792-S-HF	PNP Transistors 文件：1.01729 Mbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB792-T	PNP Transistors 文件：962.49 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB792-T	PNP Transistors 文件：926.31 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB792-T-HF	PNP Transistors 文件：945.3 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB792-T-HF	PNP Transistors 文件：1.01729 Mbytes Page：2 Pages	KEXIN 科信电子	KEXIN

2SB79产品属性

类型
描述
Number of Elements per Chip：
1
Minimum Operating Temperature：
-55°C
Minimum DC Current Gain：
1000@4A@3V
Maximum Operating Temperature：
150°C
Maximum Emitter Base Voltage：
7V
Maximum Continuous DC Collector Current：
8A
Maximum Collector Emitter Voltage：
120V
Maximum Collector Base Voltage：
120V
Maximum Base Emitter Saturation Voltage：
2@8mA@4A3.5@80mA@8A
Configuration：
Single

2SB79供应商更多...

更新时间：2026-5-14 22:50:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
上海意淼电子科技有限公司	2SB798-T2	NEC	23+	SOT89	20000	全新原装假一赔十	询价
中天科工半导体（深圳）有限公司	2SB798	NEC	25+	SOT-89	32000	NEC全新特价2SB798即刻询购立享优惠#长期有货	询价
深圳市正纳电子有限公司	2SB798-T1-AZ	RENESAS		SOT89	30000000	原装进口中国百强元器件分销企业专注RENESAS十年公司大量RENESAS现货欢迎您的咨询百年不变服务至上	询价
深圳市豪迈兴电子有限公司	2SB798-T1	NEC	24+	SOT-89	4231	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市腾亿芯科技有限公司	2SB798/DK	Bychip/百域芯	25+	SOT-89	20000	原装	询价
深圳市中飞凌科技有限公司	2SB798-T1-AZ	RENESAS	26+	SOT89	360000	进口原装现货	询价
深圳市振宏微科技有限公司	2SB798-T1(DL)	NEC	23+	NA	1383	专做原装正品,假一罚百!	询价
深圳市科恒伟业电子有限公司	2SB798-T2	RENESAS/瑞萨	2450+	SOT89	8850	只做原装正品假一赔十为客户做到零风险!!	询价
千层芯半导体(深圳)有限公司	2SB798-T1	NEC	24+	SOT89	5000	原装现货	询价
深圳市鸿昌盛电子科技有限公司	2SB798-AZ/DK	RENESAS	25+		150	公司现货库存	询价

2SB79芯片相关品牌

2SB79规格书下载地址

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2SB79数据表相关新闻

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2SB649 MOS
www.jskj-ic.com
2021-9-10

DdatasheetPDF页码索引

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找IC，尽在114IC

2SB79晶体管资料

2SB79产品属性

2SB79供应商更多...

2SB79芯片相关品牌

2SB79规格书下载地址

2SB79参数引脚图相关

2SB79数据表相关新闻

2SB562L-TO92NLK-B-TG_UTC代理商

2SB857L-TO252R-D-TG_UTC代理商

2SB776L-TO252R-P-TG_UTC代理商

2SB857L-TO126CK-D-TG_UTC代理商

2SB834L-TO220FT-O-TG_UTC代理商

2SB649 MOS

DdatasheetPDF页码索引