位置：首页 > IC中文资料第9911页 > 2SB649C
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PNP Epitaxial Planar Transistors PNP Epitaxial Planar Transistors P/b Lead(Pb)-Free | WEITRON |   | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2SD669/669A • High breakdown voltage VCEO:-120/-160V • High current -1.5A • Low saturation voltage,excellent hFE linearity APPLICATIONS • For low-frequency power amplifier applications | JMNIC 锦美电子 | | ||
PNP Type Plastic Encapsulate Transistors FEATURES Power smplifier applications Power dissipation PCM : 1W（Tamb=25℃） Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -180 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150 Collector-emitter voltage VC | SECOS 喜可士 | | ||
TO-126C Plastic-Encapsulated Transistors 文件：63.42 Kbytes Page：1 Pages | TEL | |
2SB649C产品属性
- 类型
描述
- 型号
2SB649C
- 功能描述
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1.5A I(C) | TO-126
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PMC |
2016+ |
TO-126 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
长电 |
25+23+ |
TO-126 |
24895 |
绝对原装正品全新进口深圳现货 |
|||
HITACHI/日立 |
24+ |
TO-126 |
158331 |
明嘉莱只做原装正品现货 |
|||
RENES |
22+ |
TO-126 |
8000 |
原装正品支持实单 |
|||
HIT |
24+ |
TO-92 |
20000 |
||||
Cj江苏长电 |
24+ |
TO126 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
CJ/长电 |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
HIT日立 |
23+ |
TO-126 |
5000 |
原装正品,假一罚十 |
|||
UTC/友顺 |
24+ |
DIP16 |
9600 |
原装现货,优势供应,支持实单! |
|||
HIT |
18+ |
TO-126 |
85600 |
保证进口原装可开17%增值税发票 |
2SB649C规格书下载地址
2SB649C参数引脚图相关
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- 2SB649-C-AB3-K
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- 2SB649-B-AB3-B
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- 2SB644
- 2SB643
- 2SB642
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- 2SB634
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- 2SB633
- 2SB632K
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2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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