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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PNP Epitaxial Planar Transistors PNP Epitaxial Planar Transistors P/b Lead(Pb)-Free | WEITRON |   | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2SD669/669A • High breakdown voltage VCEO:-120/-160V • High current -1.5A • Low saturation voltage,excellent hFE linearity APPLICATIONS • For low-frequency power amplifier applications | JMNIC 锦美电子 | | ||
PNP Type Plastic Encapsulate Transistors FEATURES Power smplifier applications Power dissipation PCM : 1W（Tamb=25℃） Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -180 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150 Collector-emitter voltage VC | SECOS 喜可士 | | ||
TO-126C Plastic-Encapsulated Transistors 文件：63.42 Kbytes Page：1 Pages | TEL | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UTC/友顺 |
2022+ |
SOT-89 |
8000 |
只做原装支持实单,有单必成。 |
|||
友顺 UTC |
23+ |
SOT-89 |
17050 |
原装正品，实单请联系 |
|||
HIT日立 |
23+ |
TO-126 |
5000 |
原装正品,假一罚十 |
|||
UTC |
24+ |
TO-126 |
24140 |
只做原装正品现货欢迎来电查询15919825718 |
|||
CJ/长电 |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
HITACHI |
25+ |
TO-126 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
UTC/友顺 |
24+ |
DIP16 |
9600 |
原装现货,优势供应,支持实单! |
|||
MALAYSIA |
23+24 |
TO126 |
28950 |
原装现货.优势热卖.终端BOM表可配单 |
|||
HIT |
18+ |
TO-126 |
85600 |
保证进口原装可开17%增值税发票 |
|||
RENES |
22+ |
TO-126 |
8000 |
原装正品支持实单 |
2SB649AD-C规格书下载地址
2SB649AD-C参数引脚图相关
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- 2SB654
- 2SB653A
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- 2SB649AG-C-AB3
- 2SB649AG-C-AA3-R
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- 2SB649A-C-T92-K
- 2SB649A-C-T92-B
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- 2SB649A-C-T6C-B
- 2SB649A-C-T60-R
- 2SB649A-C-T60-K
- 2SB649A-C-T60-B
- 2SB649ACIC
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- 2SB649A-C-AB3-K
- 2SB649A-C-AB3-B
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- 2SB649AC-145
- 2SB649AC/2SD669AC
- 2SB649A
- 2SB649
- 2SB648A
- 2SB648
- 2SB647L
- 2SB647A
- 2SB647
- 2SB646A
- 2SB646
- 2SB645
- 2SB644
- 2SB643
- 2SB642
- 2SB638
- 2SB634
- 2SB633P
- 2SB633
- 2SB632K
- 2SB632
- 2SB631K
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2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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