TO-126 Plastic-Encapsulate Transistors

FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD669 / 2 SD669A

PNP Epitaxial Planar Transistors

PNP Epitaxial Planar Transistors P/b Lead(Pb)-Free

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2SD669/669A • High breakdown voltage VCEO:-120/-160V • High current -1.5A • Low saturation voltage,excellent hFE linearity APPLICATIONS • For low-frequency power amplifier applications

PNP Type Plastic Encapsulate Transistors

FEATURES Power smplifier applications Power dissipation PCM : 1W（Tamb=25℃） Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -180 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150 Collector-emitter voltage VC

TO-126C Plastic-Encapsulated Transistors

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