Silicon PNP epitaxial planer type(Silicon PNP epitaxial planer type)

Silicon PNP epitaxial planer type For low-power general amplification ■ Features ● High foward current transfer ratio hFE. ● M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

Silicon PNP epitaxial planer type

Silicon PNP epitaxial planner type For low-power general amplification Features • High forward current transfer radio hFE. • M type package allowing esay automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

Silicon PNP epitaxial planer type

For low-power general amplification Complementary to 2SD638 and 2SD639

For low-frequency general amplification

For low-frequency general amplification ■Features •M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

Silicon PNP epitaxial planer type(For low-power general amplification)

For low-frequency general amplification ■Features •M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

Silicon PNP epitaxial planer type(For low-power general amplification)

For low-frequency general amplification ■Features •M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

For low-frequency general amplification

For low-frequency general amplification ■Features •M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

Silicon PNP epitaxial planer type

For low-power general amplification Complementary to 2SD638 and 2SD639

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • High power dissipation APPLICATIONS • For power switching and general purpose applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • High power dissipation APPLICATIONS • For power switching and general purpose applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • High power dissipation APPLICATIONS • For power switching and general purpose applications

Silicon PNP Power Transistors

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) • High Power Dissipation- : Pc= 150W(Max)@Tc=25°C • Complement to Type 2SD665 APPLICATIONS • Designed for power amplifier applications. • Recommended for 200W high-fidelity audio frequency amplifier output stage.

LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A

LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A

LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A

LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A

Silicon PNP Epitaxial

1. Low frequency power amplifier 2. Complementary pair with 2SD667/A

TO-92MOD Plastic-Encapsulate Transistors

Features Low Frequency Power Amplifier Complementary Pair with 25D667/A

TO-92MOD Plastic-Encapsulate Transistors

Features Low Frequency Power Amplifier Complementary Pair with 25D667/A

Silicon PNP Epitaxial

1. Low frequency power amplifier 2. Complementary pair with 2SD667/A

TO-92MOD Plastic-Encapsulate Transistors

Features Low Frequency Power Amplifier Complementary Pair with 25D667/A

TO-92MOD Plastic-Encapsulate Transistors

Features Low Frequency Power Amplifier Complementary Pair with 25D667/A

LOW FREQUENCY HIGH VOLTAGE AMPLIFIER

Application Low frequency high voltage amplifier complementary pair with 2SD668/A

LOW FREQUENCY HIGH VOLTAGE AMPLIFIER

Application Low frequency high voltage amplifier complementary pair with 2SD668/A

Silicon PNP Epitaxial

Application Low frequency power amplifier complementary pair with 2SD669/A

PNP Epitaxial Planar Transistors

PNP Epitaxial Planar Transistors P/b Lead(Pb)-Free

PNP Type Plastic Encapsulate Transistors

FEATURES Power smplifier applications Power dissipation PCM : 1W（Tamb=25℃） Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -180 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150 Collector-emitter voltage VC

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2SD669/669A • High breakdown voltage VCEO:-120/-160V • High current -1.5A • Low saturation voltage,excellent hFE linearity APPLICATIONS • For low-frequency power amplifier applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SD669/669A ·High breakdown voltage VCEO:-120/-160V ·High current -1.5A ·Low saturation voltage,excellent hFE linearity APPLICATIONS ·For low-frequency power amplifier applications

TO-92L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Power amplifier applications

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES Low frequency power amplifier complementary pair with 2SD669/A

Silicon PNP transistor in a TO-126 Plastic Package.

Descriptions Silicon PNP transistor in a TO-126 Plastic Package. Features Complementary pair with 2SD669(A). Applications Low frequency power amplifier.

Silicon PNP Power Transistor

DESCRIPTION • High Collector Current-lc=-i.5A • High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min) • Good Linearity of hFE • Low Saturation Voltage • Complement to Type 2SD669 APPLICATIONS • Power amplifier applications

TO-126 Plastic-Encapsulate Transistors

FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD669 / 2 SD669A

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A

Silicon PNP transistor in a TO-126 Plastic Package

Descriptions Silicon PNP transistor in a TO-126 Plastic Package. Features Complementary pair with 2SD669(A). Applications Low frequency power amplifier.

PNP Silicon Transistor

Features ● Collector-Emitter Voltage :-160V ● Collector Current :-1.5A

TO-92L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Power amplifier applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SD669/669A ·High breakdown voltage VCEO:-120/-160V ·High current -1.5A ·Low saturation voltage,excellent hFE linearity APPLICATIONS ·For low-frequency power amplifier applications

TO-126 Plastic-Encapsulate Transistors

FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD669 / 2 SD669A

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES Low frequency power amplifier complementary pair with 2SD669/A

PNP Type Plastic Encapsulate Transistors

FEATURES Power smplifier applications Power dissipation PCM : 1W（Tamb=25℃） Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -180 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150 Collector-emitter voltage VC

PNP Epitaxial Planar Transistors

PNP Epitaxial Planar Transistors P/b Lead(Pb)-Free

Silicon PNP Epitaxial

Application Low frequency power amplifier complementary pair with 2SD669/A

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2SD669/669A • High breakdown voltage VCEO:-120/-160V • High current -1.5A • Low saturation voltage,excellent hFE linearity APPLICATIONS • For low-frequency power amplifier applications

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A