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位置：首页 > IC中文资料第439页 > 2SB64

2SB64晶体管资料

  • 2SB64别名：2SB64三极管、2SB64晶体管、2SB64晶体三极管

  • 2SB64生产厂家：日本东芝公司

  • 2SB64制作材料：Ge-PNP

  • 2SB64性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L

  • 2SB64封装形式：直插封装

  • 2SB64极限工作电压：100V

  • 2SB64最大电流允许值：6A

  • 2SB64最大工作频率：<1MHZ或未知

  • 2SB64引脚数：2

  • 2SB64最大耗散功率：25W

  • 2SB64放大倍数：

  • 2SB64图片代号：E-44

  • 2SB64vtest：100

  • 2SB64htest：999900

  • 2SB64atest：6

  • 2SB64wtest：25

  • 2SB64代换 2SB64用什么型号代替：AC102,AC122,AL103,2N3616,2N3618,2SB231,3AD56C,

型号 功能描述 生产厂家&企业 LOGO 操作
2SB642

SiliconPNPepitaxialplanertype(SiliconPNPepitaxialplanertype)

SiliconPNPepitaxialplanertype Forlow-powergeneralamplification ■Features ●HighfowardcurrenttransferratiohFE. ●Mtypepackageallowingeasyautomaticandmanualinsertionaswellasstand-alonefixingtotheprintedcircuitboard.

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic
2SB642

SiliconPNPepitaxialplanertype

SiliconPNPepitaxialplannertype Forlow-powergeneralamplification Features •HighforwardcurrenttransferradiohFE. •Mtypepackageallowingesayautomaticandmanualinsertionaswellasstand-alonefixingtotheprintedcircuitboard.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2SB643

SiliconPNPepitaxialplanertype

Forlow-powergeneralamplification Complementaryto2SD638and2SD639

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2SB643

Forlow-frequencygeneralamplification

Forlow-frequencygeneralamplification ■Features •Mtypepackageallowingeasyautomaticandmanualinsertionaswellasstand-alonefixingtotheprintedcircuitboard.

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic
2SB643

SiliconPNPepitaxialplanertype(Forlow-powergeneralamplification)

Forlow-frequencygeneralamplification ■Features •Mtypepackageallowingeasyautomaticandmanualinsertionaswellasstand-alonefixingtotheprintedcircuitboard.

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic
2SB644

SiliconPNPepitaxialplanertype(Forlow-powergeneralamplification)

Forlow-frequencygeneralamplification ■Features •Mtypepackageallowingeasyautomaticandmanualinsertionaswellasstand-alonefixingtotheprintedcircuitboard.

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic
2SB644

Forlow-frequencygeneralamplification

Forlow-frequencygeneralamplification ■Features •Mtypepackageallowingeasyautomaticandmanualinsertionaswellasstand-alonefixingtotheprintedcircuitboard.

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic
2SB644

SiliconPNPepitaxialplanertype

Forlow-powergeneralamplification Complementaryto2SD638and2SD639

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2SB645

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3package •Highpowerdissipation APPLICATIONS •Forpowerswitchingandgeneralpurposeapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SB645

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3package •Highpowerdissipation APPLICATIONS •Forpowerswitchingandgeneralpurposeapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SB645

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3package •Highpowerdissipation APPLICATIONS •Forpowerswitchingandgeneralpurposeapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC
2SB645

SiliconPNPPowerTransistors

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-200V(Min) •HighPowerDissipation-:Pc=150W(Max)@Tc=25°C •ComplementtoType2SD665 APPLICATIONS •Designedforpoweramplifierapplications. •Recommendedfor200Whigh-fidelityaudiofrequencyamplifieroutputstage.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2SB646

LOWFREQUENCYHIGHVOLTAGEAMPLIFIERComplementarypairwith2SD666/A

LOWFREQUENCYHIGHVOLTAGEAMPLIFIER Complementarypairwith2SD666/A

HitachiHitachi Semiconductor

日立日立公司

Hitachi
2SB646A

LOWFREQUENCYHIGHVOLTAGEAMPLIFIERComplementarypairwith2SD666/A

LOWFREQUENCYHIGHVOLTAGEAMPLIFIER Complementarypairwith2SD666/A

HitachiHitachi Semiconductor

日立日立公司

Hitachi
2SB647

SiliconPNPEpitaxial

1.Lowfrequencypoweramplifier 2.Complementarypairwith2SD667/A

HitachiHitachi Semiconductor

日立日立公司

Hitachi
2SB647

TO-92MODPlastic-EncapsulateTransistors

Features LowFrequencyPowerAmplifier ComplementaryPairwith25D667/A

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SB647A

TO-92MODPlastic-EncapsulateTransistors

Features LowFrequencyPowerAmplifier ComplementaryPairwith25D667/A

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SB647A

SiliconPNPEpitaxial

1.Lowfrequencypoweramplifier 2.Complementarypairwith2SD667/A

HitachiHitachi Semiconductor

日立日立公司

Hitachi
2SB647A-TA

TO-92MODPlastic-EncapsulateTransistors

Features LowFrequencyPowerAmplifier ComplementaryPairwith25D667/A

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SB647-TA

TO-92MODPlastic-EncapsulateTransistors

Features LowFrequencyPowerAmplifier ComplementaryPairwith25D667/A

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SB648

LOWFREQUENCYHIGHVOLTAGEAMPLIFIER

Application Lowfrequencyhighvoltageamplifiercomplementarypairwith2SD668/A

HitachiHitachi Semiconductor

日立日立公司

Hitachi
2SB648A

LOWFREQUENCYHIGHVOLTAGEAMPLIFIER

Application Lowfrequencyhighvoltageamplifiercomplementarypairwith2SD668/A

HitachiHitachi Semiconductor

日立日立公司

Hitachi
2SB649

PNPTypePlasticEncapsulateTransistors

FEATURES Powersmplifierapplications Powerdissipation PCM:1W（Tamb=25℃） Collectorcurrent ICM:-1.5A Collector-basevoltage V(BR)CBO:-180V Operatingandstoragejunctiontemperaturerange TJ，Tstg:-55℃to+150 Collector-emittervoltage VC

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
2SB649

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-126package •Complementtotype2SD669/669A •HighbreakdownvoltageVCEO:-120/-160V •Highcurrent-1.5A •Lowsaturationvoltage,excellenthFElinearity APPLICATIONS •Forlow-frequencypoweramplifierapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC
2SB649

SiliconPNPEpitaxial

Application Lowfrequencypoweramplifiercomplementarypairwith2SD669/A

HitachiHitachi Semiconductor

日立日立公司

Hitachi
2SB649

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-126package ·Complementtotype2SD669/669A ·HighbreakdownvoltageVCEO:-120/-160V ·Highcurrent-1.5A ·Lowsaturationvoltage,excellenthFElinearity APPLICATIONS ·Forlow-frequencypoweramplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SB649

TO-92LPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES Poweramplifierapplications

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU
2SB649

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES Lowfrequencypoweramplifiercomplementarypair with2SD669/A

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN
2SB649

SiliconPNPtransistorinaTO-126PlasticPackage.

Descriptions SiliconPNPtransistorinaTO-126PlasticPackage. Features Complementarypairwith2SD669(A). Applications Lowfrequencypoweramplifier.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2SB649

SiliconPNPPowerTransistor

DESCRIPTION •HighCollectorCurrent-lc=-i.5A •HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=-120V(Min) •GoodLinearityofhFE •LowSaturationVoltage •ComplementtoType2SD669 APPLICATIONS •Poweramplifierapplications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
2SB649

PNPEpitaxialPlanarTransistors

PNPEpitaxialPlanarTransistors P/bLead(Pb)-Free

WEITRON

Weitron Technology

WEITRON
2SB649

BIPOLARPOWERGENERALPURPOSETRANSISTOR

PNPSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SD669/A

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SB649

TO-126Plastic-EncapsulateTransistors

FEATURES LowFrequencyPowerAmplifierComplementaryPair with2SD669/2SD669A

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SB649A

PNPEpitaxialPlanarTransistors

PNPEpitaxialPlanarTransistors P/bLead(Pb)-Free

WEITRON

Weitron Technology

WEITRON
2SB649A

SiliconPNPEpitaxial

Application Lowfrequencypoweramplifiercomplementarypairwith2SD669/A

HitachiHitachi Semiconductor

日立日立公司

Hitachi
2SB649A

BIPOLARPOWERGENERALPURPOSETRANSISTOR

PNPSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SD669/A

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SB649A

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-126package ·Complementtotype2SD669/669A ·HighbreakdownvoltageVCEO:-120/-160V ·Highcurrent-1.5A ·Lowsaturationvoltage,excellenthFElinearity APPLICATIONS ·Forlow-frequencypoweramplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SB649A

TO-126Plastic-EncapsulateTransistors

FEATURES LowFrequencyPowerAmplifierComplementaryPair with2SD669/2SD669A

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SB649A

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES Lowfrequencypoweramplifiercomplementarypair with2SD669/A

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN
2SB649A

SiliconPNPtransistorinaTO-126PlasticPackage

Descriptions SiliconPNPtransistorinaTO-126PlasticPackage. Features Complementarypairwith2SD669(A). Applications Lowfrequencypoweramplifier.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2SB649A

PNPSiliconTransistor

Features ●Collector-EmitterVoltage:-160V ●CollectorCurrent:-1.5A

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SB649A

TO-92LPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES Poweramplifierapplications

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU
2SB649A

PNPTypePlasticEncapsulateTransistors

FEATURES Powersmplifierapplications Powerdissipation PCM:1W（Tamb=25℃） Collectorcurrent ICM:-1.5A Collector-basevoltage V(BR)CBO:-180V Operatingandstoragejunctiontemperaturerange TJ，Tstg:-55℃to+150 Collector-emittervoltage VC

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
2SB649A

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-126package •Complementtotype2SD669/669A •HighbreakdownvoltageVCEO:-120/-160V •Highcurrent-1.5A •Lowsaturationvoltage,excellenthFElinearity APPLICATIONS •Forlow-frequencypoweramplifierapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC
2SB649A-B-AB3-B

BIPOLARPOWERGENERALPURPOSETRANSISTOR

PNPSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SD669/A

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SB649A-B-AB3-K

BIPOLARPOWERGENERALPURPOSETRANSISTOR

PNPSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SD669/A

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SB649A-B-AB3-R

BIPOLARPOWERGENERALPURPOSETRANSISTOR

PNPSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SD669/A

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SB649A-B-T60-B

BIPOLARPOWERGENERALPURPOSETRANSISTOR

PNPSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SD669/A

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SB649A-B-T60-K

BIPOLARPOWERGENERALPURPOSETRANSISTOR

PNPSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SD669/A

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SB649A-B-T60-R

BIPOLARPOWERGENERALPURPOSETRANSISTOR

PNPSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SD669/A

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SB649A-B-T6C-B

BIPOLARPOWERGENERALPURPOSETRANSISTOR

PNPSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SD669/A

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SB649A-B-T6C-K

BIPOLARPOWERGENERALPURPOSETRANSISTOR

PNPSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SD669/A

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SB649A-B-T6C-R

BIPOLARPOWERGENERALPURPOSETRANSISTOR

PNPSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SD669/A

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SB649A-B-T92-B

BIPOLARPOWERGENERALPURPOSETRANSISTOR

PNPSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SD669/A

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SB649A-B-T92-K

BIPOLARPOWERGENERALPURPOSETRANSISTOR

PNPSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SD669/A

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SB649A-B-T92-R

BIPOLARPOWERGENERALPURPOSETRANSISTOR

PNPSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SD669/A

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SB649A-C-AB3-B

BIPOLARPOWERGENERALPURPOSETRANSISTOR

PNPSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SD669/A

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SB649A-C-AB3-K

BIPOLARPOWERGENERALPURPOSETRANSISTOR

PNPSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SD669/A

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SB649A-C-AB3-R

BIPOLARPOWERGENERALPURPOSETRANSISTOR

PNPSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SD669/A

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SB649A-C-T60-B

BIPOLARPOWERGENERALPURPOSETRANSISTOR

PNPSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SD669/A

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

2SB64产品属性

  • 类型

    描述

  • 型号

    2SB64

  • 制造商

    Panasonic Industrial Company

  • 功能描述

    TRANSISTOR

2SB64供应商更多...

更新时间：2025-6-6 11:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
贸泽芯城（深圳）电子科技有限公司
2SB642
N/A
23+
TO92
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
深圳市航润创能电子集团有限公司
2SB644-Q
PANASONIC
21+
TO92F
12400
原装现货假一赔十
询价
深圳兆威电子有限公司
2SB645
HITACHI/日立
22+
TO3
39783
原装正品现货
询价
深圳市一线半导体有限公司
2SB642R
MAT
24+
38760
询价
深圳市中福国际管理有限公司
2SB644-Q
PANASONIC
20+
TO92F
12400
进口原装现货,假一赔十
询价
深圳市旺财半导体有限公司
2SB643
23+
老式管
4000
正品原装货价格低
询价
深圳市明嘉莱科技有限公司
2SB645
HITACHI/日立
25+
TO3
860000
明嘉莱只做原装正品现货
询价
中天科工半导体（深圳）有限公司
2SB645
TOSHIBA/东芝
专业铁帽
TO-3
67500
铁帽原装主营-可开原型号增税票
询价
深圳市昊创电子有限公司
2SB645
TOSHIBA/东芝
专业铁帽
TO-3
100
原装铁帽专营,代理渠道量大可订货
询价
深圳市威雅利发展有限公司
2SB644-Q
PANASONIC
01+
TO92F
12400
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价

2SB64芯片相关品牌

  • ANALOGICTECH
  • ASTRODYNE
  • CT
  • DSK
  • EIC
  • EMCORE
  • EXXELIA
  • MTRONPTI
  • NTE
  • P-TEC
  • WECO
  • Yamaha

2SB64规格书下载地址

2SB64参数引脚图相关

2SB64数据表相关新闻

DdatasheetPDF页码索引

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