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2SB64晶体管资料
2SB64别名：2SB64三极管、2SB64晶体管、2SB64晶体三极管
2SB64生产厂家：日本东芝公司
2SB64制作材料：Ge-PNP
2SB64性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2SB64封装形式：直插封装
2SB64极限工作电压：100V
2SB64最大电流允许值：6A
2SB64最大工作频率：<1MHZ或未知
2SB64引脚数：2
2SB64最大耗散功率：25W
2SB64放大倍数：
2SB64图片代号：E-44
2SB64vtest：100
2SB64htest：999900
- 2SB64atest：6
2SB64wtest：25
2SB64代换 2SB64用什么型号代替：AC102,AC122,AL103,2N3616,2N3618,2SB231,3AD56C,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon PNP epitaxial planer type(Silicon PNP epitaxial planer type) Silicon PNP epitaxial planer type For low-power general amplification ■ Features ● High foward current transfer ratio hFE. ● M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. | Panasonic 松下 |   | ||
Silicon PNP epitaxial planer type Silicon PNP epitaxial planner type For low-power general amplification Features • High forward current transfer radio hFE. • M type package allowing esay automatic and manual insertion as well as stand-alone fixing to the printed circuit board. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP epitaxial planer type For low-power general amplification Complementary to 2SD638 and 2SD639 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP epitaxial planer type(For low-power general amplification) For low-frequency general amplification ■Features •M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. | Panasonic 松下 | | ||
For low-frequency general amplification For low-frequency general amplification ■Features •M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. | Panasonic 松下 | | ||
For low-frequency general amplification For low-frequency general amplification ■Features •M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. | Panasonic 松下 | | ||
Silicon PNP epitaxial planer type(For low-power general amplification) For low-frequency general amplification ■Features •M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. | Panasonic 松下 | | ||
Silicon PNP epitaxial planer type For low-power general amplification Complementary to 2SD638 and 2SD639 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • High power dissipation APPLICATIONS • For power switching and general purpose applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • High power dissipation APPLICATIONS • For power switching and general purpose applications | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • High power dissipation APPLICATIONS • For power switching and general purpose applications | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) • High Power Dissipation- : Pc= 150W(Max)@Tc=25°C • Complement to Type 2SD665 APPLICATIONS • Designed for power amplifier applications. • Recommended for 200W high-fidelity audio frequency amplifier output stage. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A | HitachiHitachi Semiconductor 日立日立公司 | | ||
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon PNP Epitaxial 1. Low frequency power amplifier 2. Complementary pair with 2SD667/A | HitachiHitachi Semiconductor 日立日立公司 | | ||
TO-92MOD Plastic-Encapsulate Transistors Features Low Frequency Power Amplifier Complementary Pair with 25D667/A | DGNJDZ 南晶电子 | | ||
TO-92MOD Plastic-Encapsulate Transistors Features Low Frequency Power Amplifier Complementary Pair with 25D667/A | DGNJDZ 南晶电子 | | ||
Silicon PNP Epitaxial 1. Low frequency power amplifier 2. Complementary pair with 2SD667/A | HitachiHitachi Semiconductor 日立日立公司 | | ||
TO-92MOD Plastic-Encapsulate Transistors Features Low Frequency Power Amplifier Complementary Pair with 25D667/A | DGNJDZ 南晶电子 | | ||
TO-92MOD Plastic-Encapsulate Transistors Features Low Frequency Power Amplifier Complementary Pair with 25D667/A | DGNJDZ 南晶电子 | | ||
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Application Low frequency high voltage amplifier complementary pair with 2SD668/A | HitachiHitachi Semiconductor 日立日立公司 | | ||
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Application Low frequency high voltage amplifier complementary pair with 2SD668/A | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD669/A | HitachiHitachi Semiconductor 日立日立公司 | | ||
PNP Type Plastic Encapsulate Transistors FEATURES Power smplifier applications Power dissipation PCM : 1W（Tamb=25℃） Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -180 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150 Collector-emitter voltage VC | SECOS 喜可士 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2SD669/669A • High breakdown voltage VCEO:-120/-160V • High current -1.5A • Low saturation voltage,excellent hFE linearity APPLICATIONS • For low-frequency power amplifier applications | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SD669/669A ·High breakdown voltage VCEO:-120/-160V ·High current -1.5A ·Low saturation voltage,excellent hFE linearity APPLICATIONS ·For low-frequency power amplifier applications | SAVANTIC | | ||
TO-92L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES Power amplifier applications | JIANGSU 长电科技 | | ||
TRANSISTOR (PNP) TRANSISTOR (PNP) FEATURES Low frequency power amplifier complementary pair with 2SD669/A | KOOCHIN 灏展电子 | | ||
Silicon PNP transistor in a TO-126 Plastic Package. Descriptions Silicon PNP transistor in a TO-126 Plastic Package. Features Complementary pair with 2SD669(A). Applications Low frequency power amplifier. | FOSHAN 蓝箭电子 | | ||
Silicon PNP Power Transistor DESCRIPTION • High Collector Current-lc=-i.5A • High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min) • Good Linearity of hFE • Low Saturation Voltage • Complement to Type 2SD669 APPLICATIONS • Power amplifier applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
PNP Epitaxial Planar Transistors PNP Epitaxial Planar Transistors P/b Lead(Pb)-Free | WEITRON | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
TO-126 Plastic-Encapsulate Transistors FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD669 / 2 SD669A | DGNJDZ 南晶电子 | | ||
PNP Epitaxial Planar Transistors PNP Epitaxial Planar Transistors P/b Lead(Pb)-Free | WEITRON | | ||
Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD669/A | HitachiHitachi Semiconductor 日立日立公司 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SD669/669A ·High breakdown voltage VCEO:-120/-160V ·High current -1.5A ·Low saturation voltage,excellent hFE linearity APPLICATIONS ·For low-frequency power amplifier applications | SAVANTIC | | ||
TO-126 Plastic-Encapsulate Transistors FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD669 / 2 SD669A | DGNJDZ 南晶电子 | | ||
TRANSISTOR (PNP) TRANSISTOR (PNP) FEATURES Low frequency power amplifier complementary pair with 2SD669/A | KOOCHIN 灏展电子 | | ||
Silicon PNP transistor in a TO-126 Plastic Package Descriptions Silicon PNP transistor in a TO-126 Plastic Package. Features Complementary pair with 2SD669(A). Applications Low frequency power amplifier. | FOSHAN 蓝箭电子 | | ||
PNP Silicon Transistor Features ● Collector-Emitter Voltage :-160V ● Collector Current :-1.5A | KEXIN 科信电子 | | ||
TO-92L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES Power amplifier applications | JIANGSU 长电科技 | | ||
PNP Type Plastic Encapsulate Transistors FEATURES Power smplifier applications Power dissipation PCM : 1W（Tamb=25℃） Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -180 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150 Collector-emitter voltage VC | SECOS 喜可士 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2SD669/669A • High breakdown voltage VCEO:-120/-160V • High current -1.5A • Low saturation voltage,excellent hFE linearity APPLICATIONS • For low-frequency power amplifier applications | JMNIC 锦美电子 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | |
2SB64产品属性
- 类型
描述
- 型号
2SB64
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI/日立 |
25+ |
TO3 |
860000 |
明嘉莱只做原装正品现货 |
|||
PANASONIC |
2023+ |
TO92F |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
22+ |
100000 |
代理渠道/只做原装/可含税 |
|||||
24+ |
TO-92L |
3000 |
原装现货假一罚十 |
||||
PANASON/松下 |
24+ |
NA/ |
12100 |
原装现货,当天可交货,原型号开票 |
|||
TOSHIBA/东芝 |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
PANASONIC |
24+/25+ |
5943 |
原装正品现货库存价优 |
||||
HITACHI/日立 |
2450+ |
TO3 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
PANASONIC |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
MAT |
24+ |
38760 |
2SB64芯片相关品牌
2SB64规格书下载地址
2SB64参数引脚图相关
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- 2SB656
- 2SB655(A)
- 2SB655
- 2SB654(A)
- 2SB654
- 2SB653A
- 2SB653(A)
- 2SB653
- 2SB650(H)
- 2SB65
- 2SB649A
- 2SB649(A)
- 2SB649
- 2SB648A
- 2SB648(A)
- 2SB648
- 2SB647L
- 2SB647A
- 2SB647(A)
- 2SB647
- 2SB646A
- 2SB646(A)
- 2SB646
- 2SB645
- 2SB644
- 2SB643
- 2SB642
- 2SB641
- 2SB640
- 2SB639(H)
- 2SB638(H)
- 2SB638
- 2SB637(K)
- 2SB636
- 2SB635
- 2SB634
- 2SB633P
- 2SB633
- 2SB632K
- 2SB632
- 2SB631K
- 2SB631
- 2SB630
- 2SB63
- 2SB628A
- 2SB628
- 2SB627
- 2SB626
- 2SB625
- 2SB624R
- 2SB624
- 2SB616
- 2SB613
- 2SB612
- 2SB611
- 2SB609
- 2SB608
- 2SB605
2SB64数据表相关新闻
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www.jskj-ic.com
2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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