2SB64晶体管资料
2SB64别名：2SB64三极管、2SB64晶体管、2SB64晶体三极管
2SB64生产厂家：日本东芝公司
2SB64制作材料：Ge-PNP
2SB64性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2SB64封装形式：直插封装
2SB64极限工作电压：100V
2SB64最大电流允许值：6A
2SB64最大工作频率：<1MHZ或未知
2SB64引脚数：2
2SB64最大耗散功率：25W
2SB64放大倍数：
2SB64图片代号：E-44
2SB64vtest：100
2SB64htest：999900
- 2SB64atest：6
2SB64wtest：25
2SB64代换 2SB64用什么型号代替：AC102,AC122,AL103,2N3616,2N3618,2SB231,3AD56C,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon PNP epitaxial planer type(Silicon PNP epitaxial planer type) Silicon PNP epitaxial planer type For low-power general amplification ■ Features ● High foward current transfer ratio hFE. ● M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. | PANASONIC 松下 |   | ||
Silicon PNP epitaxial planer type Silicon PNP epitaxial planner type For low-power general amplification Features • High forward current transfer radio hFE. • M type package allowing esay automatic and manual insertion as well as stand-alone fixing to the printed circuit board. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP epitaxial planer type For low-power general amplification Complementary to 2SD638 and 2SD639 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
For low-frequency general amplification For low-frequency general amplification ■Features •M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. | PANASONIC 松下 | | ||
Silicon PNP epitaxial planer type(For low-power general amplification) For low-frequency general amplification ■Features •M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. | PANASONIC 松下 | | ||
Silicon PNP epitaxial planer type(For low-power general amplification) For low-frequency general amplification ■Features •M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. | PANASONIC 松下 | | ||
For low-frequency general amplification For low-frequency general amplification ■Features •M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. | PANASONIC 松下 | | ||
Silicon PNP epitaxial planer type For low-power general amplification Complementary to 2SD638 and 2SD639 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • High power dissipation APPLICATIONS • For power switching and general purpose applications | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • High power dissipation APPLICATIONS • For power switching and general purpose applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) • High Power Dissipation- : Pc= 150W(Max)@Tc=25°C • Complement to Type 2SD665 APPLICATIONS • Designed for power amplifier applications. • Recommended for 200W high-fidelity audio frequency amplifier output stage. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • High power dissipation APPLICATIONS • For power switching and general purpose applications | SAVANTIC | | ||
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A | HITACHIHitachi Semiconductor 日立日立公司 | | ||
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon PNP Epitaxial 1. Low frequency power amplifier 2. Complementary pair with 2SD667/A | HITACHIHitachi Semiconductor 日立日立公司 | | ||
丝印代码：B647XXX；TO-92MOD Plastic-Encapsulate Transistors Features Low Frequency Power Amplifier Complementary Pair with 25D667/A | DGNJDZ 南晶电子 | | ||
TO-92MOD Plastic-Encapsulate Transistors Features Low Frequency Power Amplifier Complementary Pair with 25D667/A | DGNJDZ 南晶电子 | | ||
Silicon PNP Epitaxial 1. Low frequency power amplifier 2. Complementary pair with 2SD667/A | HITACHIHitachi Semiconductor 日立日立公司 | | ||
TO-92MOD Plastic-Encapsulate Transistors Features Low Frequency Power Amplifier Complementary Pair with 25D667/A | DGNJDZ 南晶电子 | | ||
TO-92MOD Plastic-Encapsulate Transistors Features Low Frequency Power Amplifier Complementary Pair with 25D667/A | DGNJDZ 南晶电子 | | ||
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Application Low frequency high voltage amplifier complementary pair with 2SD668/A | HITACHIHitachi Semiconductor 日立日立公司 | | ||
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Application Low frequency high voltage amplifier complementary pair with 2SD668/A | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD669/A | HITACHIHitachi Semiconductor 日立日立公司 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SD669/669A ·High breakdown voltage VCEO:-120/-160V ·High current -1.5A ·Low saturation voltage,excellent hFE linearity APPLICATIONS ·For low-frequency power amplifier applications | SAVANTIC | | ||
Silicon PNP Power Transistor DESCRIPTION • High Collector Current-lc=-i.5A • High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min) • Good Linearity of hFE • Low Saturation Voltage • Complement to Type 2SD669 APPLICATIONS • Power amplifier applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
PNP Type Plastic Encapsulate Transistors FEATURES Power smplifier applications Power dissipation PCM : 1W（Tamb=25℃） Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -180 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150 Collector-emitter voltage VC | SECOS 喜可士 | | ||
丝印代码：B649；TO-126 Plastic-Encapsulate Transistors FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD669 / 2 SD669A | DGNJDZ 南晶电子 | | ||
TO-92L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES Power amplifier applications | JIANGSU 长电科技 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2SD669/669A • High breakdown voltage VCEO:-120/-160V • High current -1.5A • Low saturation voltage,excellent hFE linearity APPLICATIONS • For low-frequency power amplifier applications | JMNIC 锦美电子 | | ||
PNP Epitaxial Planar Transistors PNP Epitaxial Planar Transistors P/b Lead(Pb)-Free | WEITRON | | ||
TRANSISTOR (PNP) TRANSISTOR (PNP) FEATURES Low frequency power amplifier complementary pair with 2SD669/A | KOOCHIN 灏展电子 | | ||
Silicon PNP transistor in a TO-126 Plastic Package. Descriptions Silicon PNP transistor in a TO-126 Plastic Package. Features Complementary pair with 2SD669(A). Applications Low frequency power amplifier. | FOSHAN 蓝箭电子 | | ||
Silicon PNP transistor in a TO-126 Plastic Package Descriptions Silicon PNP transistor in a TO-126 Plastic Package. Features Complementary pair with 2SD669(A). Applications Low frequency power amplifier. | FOSHAN 蓝箭电子 | | ||
TRANSISTOR (PNP) TRANSISTOR (PNP) FEATURES Low frequency power amplifier complementary pair with 2SD669/A | KOOCHIN 灏展电子 | | ||
PNP Epitaxial Planar Transistors PNP Epitaxial Planar Transistors P/b Lead(Pb)-Free | WEITRON | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2SD669/669A • High breakdown voltage VCEO:-120/-160V • High current -1.5A • Low saturation voltage,excellent hFE linearity APPLICATIONS • For low-frequency power amplifier applications | JMNIC 锦美电子 | | ||
TO-92L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES Power amplifier applications | JIANGSU 长电科技 | | ||
丝印代码：B649A；TO-126 Plastic-Encapsulate Transistors FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD669 / 2 SD669A | DGNJDZ 南晶电子 | | ||
PNP Type Plastic Encapsulate Transistors FEATURES Power smplifier applications Power dissipation PCM : 1W（Tamb=25℃） Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -180 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150 Collector-emitter voltage VC | SECOS 喜可士 | | ||
PNP Silicon Transistor Features ● Collector-Emitter Voltage :-160V ● Collector Current :-1.5A | KEXIN 科信电子 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SD669/669A ·High breakdown voltage VCEO:-120/-160V ·High current -1.5A ·Low saturation voltage,excellent hFE linearity APPLICATIONS ·For low-frequency power amplifier applications | SAVANTIC | | ||
Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD669/A | HITACHIHitachi Semiconductor 日立日立公司 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR PNP SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SD669/A | UTC 友顺 | |
2SB64产品属性
- 类型
描述
- PD Max：
150
- VCEV：
200
- VCEO：
200
- ICEV：
- ICEV_A：
- hFE：
40
- hFE_A：
.50
- VCE：
- VBE：
- IC：
- COB：
- fT：
12
- Case：
TO-204AA
- Is Darlington?：
FALSE
- IndustrySimilar：
2SB645R
- Notes：
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PMC |
2016+ |
TO-126 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
SVNTC |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
UTC/友顺 |
25+ |
SOT89 |
32360 |
UTC/友顺全新特价2SB649AG-C-AB3-R即刻询购立享优惠#长期有货 |
|||
RENESAS |
23+ |
NA |
46853 |
专做原装正品,假一罚百! |
|||
UTC |
24+ |
TO-126 |
24140 |
只做原装正品现货欢迎来电查询15919825718 |
|||
Unisonic |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
UTC |
21+ |
TO126 |
39000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HIT |
25+ |
TO-126 |
82510 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
友顺 UTC |
23+ |
SOT-89 |
17050 |
原装正品，实单请联系 |
|||
UTC |
24+ |
SOT89 |
6000 |
深圳原装现货价格优势 |
2SB64规格书下载地址
2SB64参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2SB669
- 2SB668A
- 2SB668
- 2SB66(H)
- 2SB656(A)
- 2SB656
- 2SB655(A)
- 2SB655
- 2SB654(A)
- 2SB654
- 2SB653A
- 2SB653(A)
- 2SB653
- 2SB650(H)
- 2SB65
- 2SB649A
- 2SB649(A)
- 2SB649
- 2SB648A
- 2SB648(A)
- 2SB648
- 2SB647L
- 2SB647A
- 2SB647(A)
- 2SB647
- 2SB646A
- 2SB646(A)
- 2SB646
- 2SB645
- 2SB644
- 2SB643
- 2SB642
- 2SB641
- 2SB640
- 2SB639(H)
- 2SB638(H)
- 2SB638
- 2SB637(K)
- 2SB636
- 2SB635
- 2SB634
- 2SB633P
- 2SB633
- 2SB632K
- 2SB632
- 2SB631K
- 2SB631
- 2SB630
- 2SB63
- 2SB628A
- 2SB628
- 2SB627
- 2SB626
- 2SB625
- 2SB624R
- 2SB624
- 2SB616
- 2SB613
- 2SB612
- 2SB611
- 2SB609
- 2SB608
- 2SB605
2SB64数据表相关新闻
2SB562L-TO92NLK-B-TG_UTC代理商
2SB562L-TO92NLK-B-TG_UTC代理商
2023-3-142SB776L-TO252R-P-TG_UTC代理商
2SB776L-TO252R-P-TG_UTC代理商
2023-2-242SB834L-TO220FT-O-TG_UTC代理商
2SB834L-TO220FT-O-TG_UTC代理商
2023-2-92SA928AL-TO92NLB-Y-TG
2SA928AL-TO92NLB-Y-TG
2023-2-12SB649 MOS
www.jskj-ic.com
2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
- P109
