2SB53晶体管资料

  • 2SB53别名:2SB53三极管、2SB53晶体管、2SB53晶体三极管

  • 2SB53生产厂家:日本索尼公司

  • 2SB53制作材料:Ge-PNP

  • 2SB53性质:低频或音频放大 (LF)

  • 2SB53封装形式:直插封装

  • 2SB53极限工作电压:30V

  • 2SB53最大电流允许值:0.25A

  • 2SB53最大工作频率:<1MHZ或未知

  • 2SB53引脚数:3

  • 2SB53最大耗散功率:0.2W

  • 2SB53放大倍数

  • 2SB53图片代号:D-9

  • 2SB53vtest:30

  • 2SB53htest:999900

  • 2SB53atest:0.25

  • 2SB53wtest:0.2

  • 2SB53代换 2SB53用什么型号代替:AC128,AC152,AC153,AC188,2N1191,2N1192,2N1193,2N1194,2SB324,3AX53C,

型号 功能描述 生产厂家 企业 LOGO 操作

SILICON PNP TRIPLE DIFFUSED MESA TRANSISTOR

SILICON PNP TRIPLE DIFFUSED MESA TRANSISTOR ○ Power Amplifier Applications. • Complementary to 2SD371. • Recommended for 30 W High-Fiderity Audio Frequency Amplifier Output Stage.

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3 package ·Complement to type 2SD371 ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for 30W high-fidelity audio frequency amplifier output stage

SAVANTIC

isc Silicon PNP Power Transistors

DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -100V(Min) ·High Power Dissipation- : PC= 50W(Max)@TC=25℃ ·Complement to Type 2SD371 APPLICATIONS ·Designed for power amplifier applications.

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) • High Power Dissipation- : PC= 50W(Max)@TC=25℃ • Complement to Type 2SD371 APPLICATIONS • Designed for power amplifier applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) • High Power Dissipation- : PC= 60W(Max)@TC=25℃ APPLICATIONS • Designed for power amplifier applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon PNP Power Transistors

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) • High Power Dissipation- : PC= 60W(Max)@TC=25℃ APPLICATIONS • Designed for power amplifier applications.

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • High power dissipation APPLICATIONS • Power amplifier applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • Complement to type 2SD381 • Low collector saturation voltage APPLICATIONS • Audio frequency power amplifier • Low speed power switching

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • Complement to type 2SD381 • Low collector saturation voltage APPLICATIONS • Audio frequency power amplifier • Low speed power switching

JMNIC

锦美电子

Audio Frequency Power Amplifier,Low Speed Switching

NPN / PNP SILICON EPITAXIAL TRANSISTORS Audio Frequency Power AmplifierLow Speed Switching

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • Complement to type 2SD381 • Low collector saturation voltage APPLICATIONS • Audio frequency power amplifier • Low speed power switching

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) • Complement to Type 2SD381 APPLICATIONS • Audio frequency power amplifier, low speed switching. • Suitable for driver of 60-100 watts audio amplifier.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Audio Frequency Power Amplifier,Low Speed Switching

NPN / PNP SILICON EPITAXIAL TRANSISTORS Audio Frequency Power AmplifierLow Speed Switching

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for high-power high-fidelity audio frequency amplifier output stage

SAVANTIC

isc Silicon PNP Power Transistors

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High Power Dissipation- : PC= 100W(Max)@TC=25℃ ·Complement to Type 2SD287 APPLICATIONS ·Designed for audio frequency power amplifier applications. ·Recommended for 70~80W high-fidelity audio f

ISC

无锡固电

Silicon PNP Power Transistor

文件:248.6 Kbytes Page:2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

文件:114.87 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:110.28 Kbytes Page:3 Pages

SAVANTIC

功率三极管

STMICROELECTRONICS

意法半导体

TRANSISTOR

文件:192.33 Kbytes Page:3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Power Transistors

文件:96.61 Kbytes Page:3 Pages

SAVANTIC

Silicon PNP Power Transistors

文件:164.15 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:164.15 Kbytes Page:3 Pages

JMNIC

锦美电子

TRANSISTOR

文件:192.33 Kbytes Page:3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Transistor-Bipolar Small Signal Transistors

RENESAS

瑞萨

Silicon PNP Power Transistor

文件:259.49 Kbytes Page:2 Pages

ISC

无锡固电

isc Silicon PNP Power Transistor

文件:249.37 Kbytes Page:2 Pages

ISC

无锡固电

Silicon PNP Power Transistors

文件:110.6 Kbytes Page:3 Pages

SAVANTIC

Silicon PNP Power Transistors

文件:128.4 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SB53产品属性

  • 类型

    描述

  • 型号

    2SB53

  • 功能描述

    SILICON PNP TRIPLE DIFFUSED MESA TRANSISTOR

更新时间:2025-12-24 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
NA/
26
优势代理渠道,原装正品,可全系列订货开增值税票
TOSHIBA/东芝
专业铁帽
CAN
67500
铁帽原装主营-可开原型号增税票
SANYO
24+
CAN3
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
TOSHIBA
原厂封装
9800
原装进口公司现货假一赔百
24+
TO-3
10000
TOSHIBA/东芝
专业铁帽
CAN
200
原装铁帽专营,代理渠道量大可订货
NEC(日电电子)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
TOSHIBA
23+
TO-220
7000
专注配单,只做原装进口现货
NEC
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
TOSHIBA
22+
CAN
20000
公司只有原装 品质保证

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