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2SB18晶体管资料
2SB18别名：2SB18三极管、2SB18晶体管、2SB18晶体三极管
2SB18生产厂家：日本富士通公司
2SB18制作材料：Ge-PNP
2SB18性质：低频或音频放大 （LF）
2SB18封装形式：直插封装
2SB18极限工作电压：60V
2SB18最大电流允许值：0.6A
2SB18最大工作频率：<1MHZ或未知
2SB18引脚数：2
2SB18最大耗散功率：1.8W
2SB18放大倍数：
2SB18图片代号：D-90
2SB18vtest：60
2SB18htest：999900
- 2SB18atest：0.6
2SB18wtest：1.8
2SB18代换 2SB18用什么型号代替：AD262,3AK55,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Bipolar Transistor Features • Low collector-to-emitter saturation voltage • High current and high fT • Excellent linearity of hFE • Fast switching speed • Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller Applications • Relay drivers, high-speed inverters, converters, and ot | ONSEMI 安森美半导体 |   | ||
Bipolar Transistor Features • Low collector-to-emitter saturation voltage • High current and high fT • Excellent linearity of hFE • Fast switching speed • Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller Applications • Relay drivers, high-speed inverters, converters, and ot | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Features • Low collector-to-emitter saturation voltage • High current and high fT • Excellent linearity of hFE • Fast switching speed • Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller Applications • Relay drivers, high-speed inverters, converters, and ot | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Features • Low collector-to-emitter saturation voltage • High current and high fT • Excellent linearity of hFE • Fast switching speed • Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller Applications • Relay drivers, high-speed inverters, converters, and ot | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Features • Low collector-to-emitter saturation voltage • High current and high fT • Excellent linearity of hFE • Fast switching speed • Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller Applications • Relay drivers, high-speed inverters, converters, and ot | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Features • Low collector-to-emitter saturation voltage • High current and high fT • Excellent linearity of hFE • Fast switching speed • Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller Applications • Relay drivers, high-speed inverters, converters, and ot | ONSEMI 安森美半导体 | | ||
LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION ➤ 2SB183060MA is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ➤ Due to special schottky barrier structure, the chips have very low reverse leakage current ( typical IR=0.002mA@ Vr=100V ) and maximum 150°C operation junction temper | SILAN 士兰微 | | ||
肖特基二极管芯片 2SB183060MA is a schottky barrier diode chips fabricated in silicon epitaxial planar technology;\n\nDue to special schottky barrier structure, the chips have very low reverse leakage current(typical IR=0.002mA@ Vr=100V)and maximum 150C operation junction temperature;\n\nLow power losses, high effic | SILAN 士兰微 | | ||
LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION ➤ 2SB183100MA is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ➤ Due to special schottky barrier structure, the chips have very low reverse leakage current ( typical IR=0.002mA@ Vr=100V ) and maximum 150°C operation junction te | SILAN 士兰微 | | ||
丝印代码：C7；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE) | ROHM 罗姆 | | ||
丝印代码：B1203；High-Current Switching Applications 文件：519.36 Kbytes Page：10 Pages | SANYO 三洋 | | ||
Bipolar Transistor 50V, (??5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA 文件：389.87 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 文件：389.87 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA 文件：389.87 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 50V, (??5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA 文件：389.87 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 文件：389.87 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA 文件：389.87 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
丝印代码：B1203；High-Current Switching Applications 文件：519.36 Kbytes Page：10 Pages | SANYO 三洋 | | ||
丝印代码：D1803；High-Current Switching Applications 文件：519.36 Kbytes Page：10 Pages | SANYO 三洋 | | ||
Bipolar Transistor 50V, (??5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA 文件：389.87 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 文件：389.87 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA 文件：389.87 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 50V, (??5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA 文件：389.87 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 文件：389.87 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA 文件：389.87 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
丝印代码：D1803；High-Current Switching Applications 文件：519.36 Kbytes Page：10 Pages | SANYO 三洋 | | ||
丝印代码：D1803；High-Current Switching Applications 文件：519.36 Kbytes Page：10 Pages | SANYO 三洋 | | ||
Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA 文件：389.87 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 文件：389.87 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 50V, (??5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA 文件：389.87 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA 文件：389.87 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 文件：389.87 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 50V, (??5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA 文件：389.87 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
丝印代码：D1803；High-Current Switching Applications 文件：519.36 Kbytes Page：10 Pages | SANYO 三洋 | | ||
肖特基二极管芯片 | SILAN 士兰微 | | ||
肖特基二极管芯片 | SILAN 士兰微 | |
2SB18产品属性
- 类型
描述
- 型号
2SB18
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY TRANSISTOR TO-1 -25V -.15A .2W
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
CAN3 |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
SILAN |
25+ |
CDIP |
4100 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ST |
25+ |
CAN to-39 |
20000 |
原装，请咨询 |
|||
Sanyo |
25+23+ |
To-252 |
27418 |
绝对原装正品全新进口深圳现货 |
|||
仙童 |
24+ |
TO-92 |
5000 |
||||
ST |
23+ |
CAN to-39 |
16900 |
正规渠道,只有原装! |
|||
ST |
26+ |
CAN to-39 |
60000 |
只有原装 可配单 |
|||
SANYO |
2023+ |
TO-252 |
50000 |
原装现货 |
|||
SANYO/三洋 |
2023+ |
TO-220 |
2000 |
原厂全新正品旗舰店优势现货 |
|||
ST |
25+ |
CAN to-39 |
20000 |
原装 |
2SB18规格书下载地址
2SB18参数引脚图相关
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- 2SB468
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- 2SB370A
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- 2SB2907
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- 2SB2107
- 2SB206
- 2SB196
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- 2SB193
- 2SB192
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- 2SB190
- 2SB19
- 2SB18A
- 2SB189
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- 2SB186(A,B)
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- 2SB181A
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- 2SB17A
- 2SB179
- 2SB178B
- 2SB178A
- 2SB178(Q)
- 2SB177
- 2SB176
- 2SB175C
- 2SB175B
- 2SB175A
- 2SB175
- 2SB1740
- 2SB174
- 2SB173D
- 2SB173C
- 2SB173B
- 2SB1739
- 2SB1737
- 2SB1734
- 2SB1733
- 2SB1732
- 2SB1731
- 2SB1730
- 2SB173
- 2SB1721
- 2SB172
- 2SB171
- 2SB170
- 2SB17
- 2SB16A
- 2SB169
- 2SB168
- 2SB167
- 2SB1664
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2SB18数据表相关新闻
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支持实单 价格优势 有单必成
2022-3-302SB649 MOS
www.jskj-ic.com
2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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