Low VCE(sat) Transistor (支持 AEC-Q101)

丝印代码：ES；General purpose amplification (-30V, -1A)

Features 1) A collector current is large 2) Collector-Emitter saturation voltage is low. VCE(sat)≦-380mV at IC=-500mA/IB=-25mA 3) Complements the 2SD2656. Application LOW FREQUENCY AMPLIFIER

PNP Gneral Purpose Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain • High Collector Current • Low Collector-emitter Saturation Voltage • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free avail

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High DC Current Gain ● High Collector Current ● Low Collector-emitter Saturation Voltage APPLICATIONS ● Low Frequency Amplifier Drive

丝印代码：ES；SOT-323 Plastic-Encapsulate Transistors

FEATURES High DC Current Gain High Collector Current Low Collector-emitter Saturation Voltage APPLICATIONS Low Frequency Amplifier Drive

丝印代码：ES；General purpose amplification (??0V, ??A)

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