Power Transistor (-80V, -7A)

Features 1) Low saturation voltage. (Typ. VCE(sat) = −0.3V at IC / IB =−4A / −0.4A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C). 4) Wide SOA (safe operating area). 5) Complements the 2SD2611.

For Motor / Relay drive (-120V, -6A)

For Motor / Relay drive (−120V, −6A) Features 1) Darlington connection, high hFE. 2) Resistor inbetween base-emitter. 3) Built-in damper diode. Applications Relay drive Motor drive

Silicon PNP epitaxial planer type

Silicon PNP epitaxial planer type For low-frequency amplification ■ Features • Low collector to emitter saturation voltage VCE(sat) • Large Peak collector current ICP • Mini power type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing

Silicon PNP epitaxial planer type(For low-frequency amplification)

Silicon PNP epitaxial planer type For low-frequency amplification ■ Features • Large current capacitance • Low collector to emitter saturation voltage • Small type package, allowing downsizing and thinning of the equipment.

For Motor / Relay drive (-120V, -6A)

For low-frequency amplification

Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

封装/外壳：SC-70，SOT-323 包装：散装 描述：TRANS PNP 10V 0.5A SMINI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：SC-85 包装：散装 描述：TRANS PNP 10V 0.5A SMINI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个