2SB164晶体管资料

  • 2SB164别名:2SB164三极管、2SB164晶体管、2SB164晶体三极管

  • 2SB164生产厂家:日本日电公司

  • 2SB164制作材料:Ge-PNP

  • 2SB164性质:低频或音频放大 (LF)_输出极 (E)

  • 2SB164封装形式:直插封装

  • 2SB164极限工作电压:30V

  • 2SB164最大电流允许值:0.1A

  • 2SB164最大工作频率:<1MHZ或未知

  • 2SB164引脚数:3

  • 2SB164最大耗散功率:0.18W

  • 2SB164放大倍数:β=75

  • 2SB164图片代号:D-9

  • 2SB164vtest:30

  • 2SB164htest:999900

  • 2SB164atest:0.1

  • 2SB164wtest:0.18

  • 2SB164代换 2SB164用什么型号代替:AC122,AC125,AC126,AC151,AC152,2N1191,2N1192,2N1193,2N11194,2SB54,2SB56,3AX52A,

2SB164价格

参考价格:¥13.0588

型号:2SB1647 品牌:Sanken 备注:这里有2SB164多少钱,2025年最近7天走势,今日出价,今日竞价,2SB164批发/采购报价,2SB164行情走势销售排行榜,2SB164报价。
型号 功能描述 生产厂家 企业 LOGO 操作

TOSHIBA Transistor Silicon PNP Triple Diffused Type

Audio Frequency Power Amplifier • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2 A, IB = −0.2 A) • Collector metal (fin) is covered with mold region. • Complementary to 2SD2525

TOSHIBA

东芝

Silicon PNP Power Transistors

DESCRIPTION • With ITO-220 package • Low collector saturation voltage • Complement to type 2SD2525 APPLICATIONS • Audio frequency power amplifier

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION • With ITO-220 package • Low collector saturation voltage • Complement to type 2SD2525 APPLICATIONS • Audio frequency power amplifier

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With ITO-220 package • Low collector saturation voltage • Complement to type 2SD2525 APPLICATIONS • Audio frequency power amplifier

SAVANTIC

HIGH POWER SWITCHING APPLICATIONS

High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 1500 (min) (VCE = −3 V, IC = −2.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2.5 A) • Complementary to 2SD2526

TOSHIBA

东芝

TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)

TOSHIBA

东芝

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2.5A,IB=-0.25A • Collector power dissipation: PC=25W(TC=25°C) APPLICATIONS • Audio frequency power amplifier applications

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2.5A,IB=-0.25A • Collector power dissipation: PC=25W(TC=25°C) APPLICATIONS • Audio frequency power amplifier applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2.5A,IB=-0.25A • Collector power dissipation: PC=25W(TC=25°C) APPLICATIONS • Audio frequency power amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) • Collector Power Dissipation- : Pc= 25 W@ Tc= 25C • Low Collector Saturation Voltage- : VCE(satf -1.5V(Max)@ (lc= -2.5A, IB= -0.25A) APPLICATIONS • Designed for audio frequency power amplifier applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 300(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 300(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Epitaxial Planar Type

■ Features ● High collector to emitter VCEO ● High collector power dissipation PC

KEXIN

科信电子

Silicon PNP epitaxial planar type(For power amplification)

Silicon PNP epitaxial planar type For power amplification ■ Features ● High collector to emitter VCEO ● High collector power dissipation PC ● N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.

Panasonic

松下

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 300(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 300(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Power Transistor (−80V, −4A)

Features 1) Low saturation voltage. (Typ. VCE(sat) = −0.5V at IC / IB = −3A / −0.3A) 2) Excellent DC current gain characteristics.

ROHM

罗姆

PNP -4A -80V Power Transistor

Features 1) Suitable for Power Driver 2) Low VCE(sat) VCE(sat)= 1.5V(Max.) (IC/IB= 3A/ 300mA) 3) Lead Free/RoHS Compliant. Applications Automotive power driver , LED driver Power supply

ROHM

罗姆

Silicon PNP triple diffusion planar type Darlington(For power amplification)

Silicon PNP triple diffusion planar type Darlington For power amplification ■ Features • Satisfactory forward current transfer ratio hFE characteristics • Wide area of safe operation (ASO) • Optimum for the output stage of a HiFi audio amplifier

Panasonic

松下

Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose)

Complement to type 2SD2560 Application : Audio, Series Regulator and General Purpose

Sanken

三垦

Silicon PNP Darlington Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type 2SD2560 APPLICATIONS ·Audio ,regulator and general purpose

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type 2SD2560 APPLICATIONS ·Audio ,regulator and general purpose

JMNIC

锦美电子

Silicon PNP Darlington Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type 2SD2560 APPLICATIONS ·Audio ,regulator and general purpose

ISC

无锡固电

Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) • High DC Current Gain- : hFE= 5000( Min.) @(IC= -10A, VCE= -4V) • Low Collector Saturation Voltage- : VCE(sat)= -2.5V(Max)@ (IC= -10A, IB= -10mA) • Complement to Type 2SD2560 APPLICATIONS • Designed for audio, series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Triple Diffused Planar Transistor

[SANKEN] Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1649) Application : Audio, Series Regulator and General Purpose

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon PNP Triple Diffused Type

文件:142.58 Kbytes Page:5 Pages

TOSHIBA

东芝

Silicon PNP Power Transistors

文件:216.5 Kbytes Page:3 Pages

SAVANTIC

Trans GP BJT PNP 60V 3A 3-Pin SIP

ETC

知名厂家

Silicon PNP Triple Diffused Type

文件:142.58 Kbytes Page:5 Pages

TOSHIBA

东芝

Silicon PNP Power Transistors

文件:152.73 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:152.73 Kbytes Page:3 Pages

JMNIC

锦美电子

TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS.

TOSHIBA

东芝

Trans GP BJT PNP 60V 4A 3-Pin(3+Tab) TO-220NIS

ETC

知名厂家

Silicon PNP Power Transistors

文件:249.17 Kbytes Page:3 Pages

SAVANTIC

Silicon PNP Power Transistors

文件:199.83 Kbytes Page:4 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:199.83 Kbytes Page:4 Pages

JMNIC

锦美电子

PNP Transistors

文件:1.16004 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.16004 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.16004 Mbytes Page:3 Pages

KEXIN

科信电子

Silicon PNP Darlington Power Transistors

文件:149.69 Kbytes Page:3 Pages

SAVANTIC

Silicon PNP Darlington Power Transistors

文件:166.24 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Epitaxial Planar Transistor

文件:35.6 Kbytes Page:1 Pages

Sanken

三垦

Silicon PNP Epitaxial Planar Transistor

文件:35.14 Kbytes Page:1 Pages

Sanken

三垦

Silicon PNP Darlington Power Transistors

文件:166.24 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Darlington Power Transistors

文件:166.24 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose)

文件:23.8 Kbytes Page:1 Pages

Sanken

三垦

Silicon PNP Epitaxial Planar Transistor

文件:35.37 Kbytes Page:1 Pages

Sanken

三垦

封装/外壳:3-ESIP 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP DARL 150V 17A MT-200 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Sanken

三垦

Silicon PNP Epitaxial Planar Transistor

文件:34.9 Kbytes Page:1 Pages

Sanken

三垦

Silicon PNP Epitaxial Planar Transistor

文件:35.81 Kbytes Page:1 Pages

Sanken

三垦

isc Silicon PNP Darlington Power Transistor

文件:268.31 Kbytes Page:2 Pages

ISC

无锡固电

Silicon PNP Epitaxial Planar Transistor

文件:36.29 Kbytes Page:1 Pages

Sanken

三垦

封装/外壳:TO-3P-3 整包 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP DARL 150V 15A TO3PF 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Sanken

三垦

2SB164产品属性

  • 类型

    描述

  • 型号

    2SB164

  • 制造商

    Toshiba

  • 功能描述

    PNP

更新时间:2025-12-24 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM/罗姆
24+
NA/
1000
优势代理渠道,原装正品,可全系列订货开增值税票
ROHM/罗姆
22+
SOT263
100000
代理渠道/只做原装/可含税
ROHM/罗姆
24+
TO263
880000
明嘉莱只做原装正品现货
ROHM
TO263
9850
一级代理 原装正品假一罚十价格优势长期供货
ROHM/罗姆
25+
TO263
9800
全新原装现货,假一赔十
ROHM
25+23+
TO263
7918
绝对原装正品全新进口深圳现货
ROHM
24+
SOT-263
6000
ROHM/罗姆
22+
TO263
12245
现货,原厂原装假一罚十!
ROHM/罗姆
TO263
23+
6000
原装现货有上库存就有货全网最低假一赔万
ROHM/罗姆
24+
TO263
21574
郑重承诺只做原装进口现货

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