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2SB164晶体管资料
2SB164别名:2SB164三极管、2SB164晶体管、2SB164晶体三极管
2SB164生产厂家:日本日电公司
2SB164制作材料:Ge-PNP
2SB164性质:低频或音频放大 (LF)_输出极 (E)
2SB164封装形式:直插封装
2SB164极限工作电压:30V
2SB164最大电流允许值:0.1A
2SB164最大工作频率:<1MHZ或未知
2SB164引脚数:3
2SB164最大耗散功率:0.18W
2SB164放大倍数:β=75
2SB164图片代号:D-9
2SB164vtest:30
2SB164htest:999900
- 2SB164atest:0.1
2SB164wtest:0.18
2SB164代换 2SB164用什么型号代替:AC122,AC125,AC126,AC151,AC152,2N1191,2N1192,2N1193,2N11194,2SB54,2SB56,3AX52A,
2SB164价格
参考价格:¥13.0588
型号:2SB1647 品牌:Sanken 备注:这里有2SB164多少钱,2025年最近7天走势,今日出价,今日竞价,2SB164批发/采购报价,2SB164行情走势销售排行榜,2SB164报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TOSHIBA Transistor Silicon PNP Triple Diffused Type Audio Frequency Power Amplifier • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2 A, IB = −0.2 A) • Collector metal (fin) is covered with mold region. • Complementary to 2SD2525 | TOSHIBA 东芝 | |||
Silicon PNP Power Transistors DESCRIPTION • With ITO-220 package • Low collector saturation voltage • Complement to type 2SD2525 APPLICATIONS • Audio frequency power amplifier | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors DESCRIPTION • With ITO-220 package • Low collector saturation voltage • Complement to type 2SD2525 APPLICATIONS • Audio frequency power amplifier | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION • With ITO-220 package • Low collector saturation voltage • Complement to type 2SD2525 APPLICATIONS • Audio frequency power amplifier | SAVANTIC | |||
HIGH POWER SWITCHING APPLICATIONS High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 1500 (min) (VCE = −3 V, IC = −2.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2.5 A) • Complementary to 2SD2526 | TOSHIBA 东芝 | |||
TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)
| TOSHIBA 东芝 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2.5A,IB=-0.25A • Collector power dissipation: PC=25W(TC=25°C) APPLICATIONS • Audio frequency power amplifier applications | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2.5A,IB=-0.25A • Collector power dissipation: PC=25W(TC=25°C) APPLICATIONS • Audio frequency power amplifier applications | SAVANTIC | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2.5A,IB=-0.25A • Collector power dissipation: PC=25W(TC=25°C) APPLICATIONS • Audio frequency power amplifier applications | ISC 无锡固电 | |||
Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) • Collector Power Dissipation- : Pc= 25 W@ Tc= 25C • Low Collector Saturation Voltage- : VCE(satf -1.5V(Max)@ (lc= -2.5A, IB= -0.25A) APPLICATIONS • Designed for audio frequency power amplifier applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 300(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | |||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 300(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | |||
Silicon PNP Epitaxial Planar Type ■ Features ● High collector to emitter VCEO ● High collector power dissipation PC | KEXIN 科信电子 | |||
Silicon PNP epitaxial planar type(For power amplification) Silicon PNP epitaxial planar type For power amplification ■ Features ● High collector to emitter VCEO ● High collector power dissipation PC ● N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. | Panasonic 松下 | |||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 300(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | |||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 300(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | |||
Power Transistor (−80V, −4A) Features 1) Low saturation voltage. (Typ. VCE(sat) = −0.5V at IC / IB = −3A / −0.3A) 2) Excellent DC current gain characteristics. | ROHM 罗姆 | |||
PNP -4A -80V Power Transistor Features 1) Suitable for Power Driver 2) Low VCE(sat) VCE(sat)= 1.5V(Max.) (IC/IB= 3A/ 300mA) 3) Lead Free/RoHS Compliant. Applications Automotive power driver , LED driver Power supply | ROHM 罗姆 | |||
Silicon PNP triple diffusion planar type Darlington(For power amplification) Silicon PNP triple diffusion planar type Darlington For power amplification ■ Features • Satisfactory forward current transfer ratio hFE characteristics • Wide area of safe operation (ASO) • Optimum for the output stage of a HiFi audio amplifier | Panasonic 松下 | |||
Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose) Complement to type 2SD2560 Application : Audio, Series Regulator and General Purpose | Sanken 三垦 | |||
Silicon PNP Darlington Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SD2560 APPLICATIONS ·Audio ,regulator and general purpose | SAVANTIC | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SD2560 APPLICATIONS ·Audio ,regulator and general purpose | JMNIC 锦美电子 | |||
Silicon PNP Darlington Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SD2560 APPLICATIONS ·Audio ,regulator and general purpose | ISC 无锡固电 | |||
Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) • High DC Current Gain- : hFE= 5000( Min.) @(IC= -10A, VCE= -4V) • Low Collector Saturation Voltage- : VCE(sat)= -2.5V(Max)@ (IC= -10A, IB= -10mA) • Complement to Type 2SD2560 APPLICATIONS • Designed for audio, series | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon NPN Triple Diffused Planar Transistor [SANKEN] Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1649) Application : Audio, Series Regulator and General Purpose | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Silicon PNP Triple Diffused Type 文件:142.58 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
Silicon PNP Power Transistors 文件:216.5 Kbytes Page:3 Pages | SAVANTIC | |||
Trans GP BJT PNP 60V 3A 3-Pin SIP | ETC 知名厂家 | ETC | ||
Silicon PNP Triple Diffused Type 文件:142.58 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
Silicon PNP Power Transistors 文件:152.73 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:152.73 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. | TOSHIBA 东芝 | |||
Trans GP BJT PNP 60V 4A 3-Pin(3+Tab) TO-220NIS | ETC 知名厂家 | ETC | ||
Silicon PNP Power Transistors 文件:249.17 Kbytes Page:3 Pages | SAVANTIC | |||
Silicon PNP Power Transistors 文件:199.83 Kbytes Page:4 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:199.83 Kbytes Page:4 Pages | JMNIC 锦美电子 | |||
PNP Transistors 文件:1.16004 Mbytes Page:3 Pages | KEXIN 科信电子 | |||
PNP Transistors 文件:1.16004 Mbytes Page:3 Pages | KEXIN 科信电子 | |||
PNP Transistors 文件:1.16004 Mbytes Page:3 Pages | KEXIN 科信电子 | |||
Silicon PNP Darlington Power Transistors 文件:149.69 Kbytes Page:3 Pages | SAVANTIC | |||
Silicon PNP Darlington Power Transistors 文件:166.24 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Epitaxial Planar Transistor 文件:35.6 Kbytes Page:1 Pages | Sanken 三垦 | |||
Silicon PNP Epitaxial Planar Transistor 文件:35.14 Kbytes Page:1 Pages | Sanken 三垦 | |||
Silicon PNP Darlington Power Transistors 文件:166.24 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Darlington Power Transistors 文件:166.24 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose) 文件:23.8 Kbytes Page:1 Pages | Sanken 三垦 | |||
Silicon PNP Epitaxial Planar Transistor 文件:35.37 Kbytes Page:1 Pages | Sanken 三垦 | |||
封装/外壳:3-ESIP 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP DARL 150V 17A MT-200 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | Sanken 三垦 | |||
Silicon PNP Epitaxial Planar Transistor 文件:34.9 Kbytes Page:1 Pages | Sanken 三垦 | |||
Silicon PNP Epitaxial Planar Transistor 文件:35.81 Kbytes Page:1 Pages | Sanken 三垦 | |||
isc Silicon PNP Darlington Power Transistor 文件:268.31 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Silicon PNP Epitaxial Planar Transistor 文件:36.29 Kbytes Page:1 Pages | Sanken 三垦 | |||
封装/外壳:TO-3P-3 整包 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP DARL 150V 15A TO3PF 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | Sanken 三垦 |
2SB164产品属性
- 类型
描述
- 型号
2SB164
- 制造商
Toshiba
- 功能描述
PNP
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROHM/罗姆 |
24+ |
NA/ |
1000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ROHM/罗姆 |
22+ |
SOT263 |
100000 |
代理渠道/只做原装/可含税 |
|||
ROHM/罗姆 |
24+ |
TO263 |
880000 |
明嘉莱只做原装正品现货 |
|||
ROHM |
TO263 |
9850 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ROHM/罗姆 |
25+ |
TO263 |
9800 |
全新原装现货,假一赔十 |
|||
ROHM |
25+23+ |
TO263 |
7918 |
绝对原装正品全新进口深圳现货 |
|||
ROHM |
24+ |
SOT-263 |
6000 |
||||
ROHM/罗姆 |
22+ |
TO263 |
12245 |
现货,原厂原装假一罚十! |
|||
ROHM/罗姆 |
TO263 |
23+ |
6000 |
原装现货有上库存就有货全网最低假一赔万 |
|||
ROHM/罗姆 |
24+ |
TO263 |
21574 |
郑重承诺只做原装进口现货 |
2SB164芯片相关品牌
2SB164规格书下载地址
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2SB164数据表相关新闻
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支持实单 价格优势 有单必成
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www.jskj-ic.com
2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下: ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息) ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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