2SB1643晶体管资料
2SB1643别名：2SB1643三极管、2SB1643晶体管、2SB1643晶体三极管
2SB1643生产厂家：
2SB1643制作材料：Si-PNP
2SB1643性质：HI_BETA
2SB1643封装形式：直插封装
2SB1643极限工作电压：60V
2SB1643最大电流允许值：3A
2SB1643最大工作频率：<1MHZ或未知
2SB1643引脚数：3
2SB1643最大耗散功率：40W
2SB1643放大倍数：β=300-700
2SB1643图片代号：A-80
2SB1643vtest：60
2SB1643htest：999900
- 2SB1643atest：3
2SB1643wtest：40
2SB1643代换 2SB1643用什么型号代替：
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SB1643 | Silicon PNP epitaxial planar type(For power amplification) Silicon PNP epitaxial planar type For power amplification ■ Features ● High collector to emitter VCEO ● High collector power dissipation PC ● N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. | Panasonic 松下 |   | |
2SB1643 | Silicon PNP Epitaxial Planar Type ■ Features ● High collector to emitter VCEO ● High collector power dissipation PC | KEXIN 科信电子 | | |
2SB1643 | Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 300(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | |
2SB1643 | Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 300(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | |
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 300(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 300(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | ||
PNP Transistors 文件：1.16004 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.16004 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.16004 Mbytes Page：3 Pages | KEXIN 科信电子 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROHM/罗姆 |
22+ |
TO263 |
21368 |
原装正品现货 |
|||
ROHM |
23+ |
TO-263 |
7135 |
全新原装正品现货,支持订货 |
|||
LINEAR/凌特 |
23+ |
TO-223 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
ROHM/罗姆 |
24+ |
TO263 |
9600 |
原装现货,优势供应,支持实单! |
|||
ROHM/罗姆 |
2447 |
TO263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ROHM |
1922+ |
SOT263 |
3000 |
绝对进口原装现货 |
|||
ROHM |
24+ |
SOT-263 |
6000 |
||||
23+ |
TO |
20000 |
正品原装货价格低 |
||||
ROHM |
TO263 |
9850 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ROHM/罗姆 |
24+ |
TO263 |
21574 |
郑重承诺只做原装进口现货 |
2SB1643规格书下载地址
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2SB1643数据表相关新闻
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2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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