TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

POWER AMPLIFIER APPLICATIONS • High DC Current Gain : hFE(1) = 300- 1000 • Low Collector Saturation Voltage : VCE(sat) = -0.5V(Typ.) • Complementary to 2SD2462

Silicon PNP epitaxial planar type(For low-voltage switching)

Silicon PNP epitaxial planar type For low-voltage switching ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage • High speed switching APPLICATIONS • For low-voltage switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage • High speed switching APPLICATIONS • For low-voltage switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage • High speed switching APPLICATIONS • For low-voltage switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage • High speed switching APPLICATIONS • For low-voltage switching applications

Silicon PNP epitaxial planar type(For low-voltage switching)

Silicon PNP epitaxial planar type For low-voltage switching ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw

Silicon PNP epitaxial planar type(For low-voltage switching)

Silicon PNP epitaxial planar type For low-voltage switching ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage • High speed switching APPLICATIONS • For low-voltage switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage • High speed switching APPLICATIONS • For low-voltage switching applications

Silicon PNP Power Transistor

DESCRIPTION • High-speed Switching • Low Collector to Emitter Saturation Voltage : VCE(sat)= -0.6V(Max.)@lc= -10A • Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw APPLICATIONS • Designed for low-voltage switching and general purpose appli

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage • High speed switching APPLICATIONS • For low-voltage switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage • High speed switching APPLICATIONS • For low-voltage switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage • High speed switching APPLICATIONS • For low-voltage switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage • High speed switching APPLICATIONS • For low-voltage switching applications

Silicon PNP epitaxial planar type(For low-voltage switching)

Silicon PNP epitaxial planar type For low-voltage switching ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw

Silicon PNP epitaxial planar type(For low-freauency power amplification)

For low-freauency power amplification ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Full-pack package with outstanding insulation, which can be in stalled to the heat sink with one screw

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Low collector saturation voltage ·Good linearity of hFE APPLICATIONS ·For low-voltage switching applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Low collector saturation voltage ·Good linearity of hFE APPLICATIONS ·For low-voltage switching applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Low collector saturation voltage ·Good linearity of hFE APPLICATIONS ·For low-voltage switching applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Low collector saturation voltage ·Good linearity of hFE APPLICATIONS ·For low-voltage switching applications

Silicon PNP epitaxial planar type(For low-freauency power amplification)

For low-freauency power amplification ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Full-pack package with outstanding insulation, which can be in stalled to the heat sink with one screw

Silicon PNP epitaxial planar type(For power switching)

Silicon PNP epitaxial planar type For power switching ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector current IC ● Full-pack package with outstanding insulation, which can be installed to the he

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Large collector current IC • Low collector saturation voltage. • Good linearity of hFE APPLICATIONS • For power switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Large collector current IC • Low collector saturation voltage. • Good linearity of hFE APPLICATIONS • For power switching applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Large collector current IC ·Low collector saturation voltage. ·Complement to type 2SD2469 APPLICATIONS ·For power switching applications

Silicon PNP Power Transistor

DESCRIPTION • Large Collector Current • Satisfactory Linearity of Foward Current Transfer Ratio • Low Collector to Emitter Saturation Voltage : VCE(sat)= -0.5V(Max.)@lc= -5A • Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw • Compl

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Large collector current IC ·Low collector saturation voltage. ·Complement to type 2SD2469 APPLICATIONS ·For power switching applications

Silicon PNP epitaxial planar type(For power switching)

For power switching Complementary to 2SD2469 ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector current IC ● Full-pack package with outstanding insulation, which can be installed to the heat sink w

Silicon PNP epitaxial planer type(For low-frequency amplification)

For low-frequency amplification Complementary to 2SD2474 ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga zine packing.

MEDIUM POWER TRANSISTER

Medium Power Transistor (Motor or Relay drive)(-80V, -4A) Power Transistor (80V, 4A)

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

TRANSISTOR (MICRO MOTOR DRIVE, HAMMER DRIVE, SUPER SWITCHING, AMPLIFIER APLICATIONS)

Micro Motor Drive, Hammer Drive Applications Power Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1 A, IB = −1 mA)

Silicon PNP epitaxial planer type(For power amplification)

Silicon PNP epitaxial planer type For power amplification ■ Features • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: >5 kV

For Power Amplification

Silicon PNP epitaxial planar type For power amplification ■Features •High forward current transfer ratio hFE •Satisfactory linearity of forward current transfer ratio hFE •Dielectric breakdown voltage of the package: >5 kV

Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose)

Complement to type 2SD2493 Application : Audio, Series Regulator and General Purpose

Silicon PNP Darlington Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type 2SD2493 APPLICATIONS ·Audio ,regulator and general purpose

Silicon PNP Darlington Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type 2SD2493 APPLICATIONS ·Audio ,regulator and general purpose

Silicon PNP Darlington Power Transistors

DESCRIPTION ·With TO-3PML package ·Complement to type 2SD2494 APPLICATIONS ·Audio ,regulator and general purpose

Silicon PNP Darlington Power Transistors

DESCRIPTION ·With TO-3PML package ·Complement to type 2SD2494 APPLICATIONS ·Audio ,regulator and general purpose

Silicon PNP Darlington Power Transistors

DESCRIPTION ·With TO-3PML package ·Complement to type 2SD2494 APPLICATIONS ·Audio ,regulator and general purpose

Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose)

Complement to type 2SD2494 Application : Audio, Series Regulator and General Purpose

Silicon PNP Darlington Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2495 APPLICATIONS • For audio,series regulator and general purpose applications

Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose)

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2495) Application : Audio, Series Regulator and General Purpose

Silicon PNP Darlington Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2495 APPLICATIONS • For audio,series regulator and general purpose applications

Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain • Low-Collector Saturation Voltage • Complement to Type 2SD2495 APPLICATIONS • Designed for audio.series regulator and general purpose applications.

Silicon PNP Darlington Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2495 APPLICATIONS • For audio,series regulator and general purpose applications

PNP Silicon Epitaxial Transistor

■ Features ● High current capacitance ● Low collector saturation voltage

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SB1628 features high current capacity in small dimension and is ideal for DC/DC converters and mortor drivers. FEATURES • High current capacitance • Low collector saturation voltage

Silicon PNP epitaxial planar type(For power amplification)

For power amplification ■Features ● High foward current transfer ratio hFE ● Satisfactory linearity of foward current transfer ratio hFE ● Full-pack package with outstanding insulation, which can be in stalled to the heat sink with one screw

Silicon PNP epitaxial planar type(For power amplification)

Silicon PNP epitaxial planar type For power amplification ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Allowing automatic insertion with radial taping

Silicon PNP epitaxial planar type(For low-voltage switching)

Silicon PNP epitaxial planar type For low-voltage switching ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of sma

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= -2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= -2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= -2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= -2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon PNP epitaxial planar type(For low-voltage switching)

Silicon PNP epitaxial planar type For low-voltage switching ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of sma

High-current gain Power Transistor (-60V, -3A)

2SB1639 ( -60V, -3A) 2SD2318, 2SD1944 (60V, 3A) High DC current gain.

Silicon PNP Power Transistors

DESCRIPTION • With ITO-220 package • Low collector saturation voltage • Complement to type 2SD2525 APPLICATIONS • Audio frequency power amplifier

TOSHIBA Transistor Silicon PNP Triple Diffused Type

Audio Frequency Power Amplifier • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2 A, IB = −0.2 A) • Collector metal (fin) is covered with mold region. • Complementary to 2SD2525