位置：首页 > IC中文资料第1021页 > 2SB16
2SB16晶体管资料
2SB16别名：2SB16三极管、2SB16晶体管、2SB16晶体三极管
2SB16生产厂家：日本富士通公司
2SB16制作材料：Ge-PNP
2SB16性质：低频或音频放大 （LF）
2SB16封装形式：直插封装
2SB16极限工作电压：16V
2SB16最大电流允许值：0.6A
2SB16最大工作频率：<1MHZ或未知
2SB16引脚数：2
2SB16最大耗散功率：1.8W
2SB16放大倍数：
2SB16图片代号：D-90
2SB16vtest：16
2SB16htest：999900
- 2SB16atest：0.6
2SB16wtest：1.8
2SB16代换 2SB16用什么型号代替：AD162,AD262,2SB493,3AK51,
2SB16价格
参考价格：￥13.0588
型号：2SB1647 品牌：Sanken 备注：这里有2SB16多少钱，2025年最近7天走势，今日出价，今日竞价，2SB16批发/采购报价，2SB16行情走势销售排行榜，2SB16报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TRANSISTOR (POWER AMPLIFIER APPLICATIONS) POWER AMPLIFIER APPLICATIONS • High DC Current Gain : hFE(1) = 300- 1000 • Low Collector Saturation Voltage : VCE(sat) = -0.5V(Typ.) • Complementary to 2SD2462 | TOSHIBA 东芝 |   | ||
Silicon PNP epitaxial planar type(For low-voltage switching) Silicon PNP epitaxial planar type For low-voltage switching ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw | Panasonic 松下 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Low collector saturation voltage • High speed switching APPLICATIONS • For low-voltage switching applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Low collector saturation voltage • High speed switching APPLICATIONS • For low-voltage switching applications | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Low collector saturation voltage • High speed switching APPLICATIONS • For low-voltage switching applications | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Low collector saturation voltage • High speed switching APPLICATIONS • For low-voltage switching applications | ISC 无锡固电 | | ||
Silicon PNP epitaxial planar type(For low-voltage switching) Silicon PNP epitaxial planar type For low-voltage switching ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw | Panasonic 松下 | | ||
Silicon PNP epitaxial planar type(For low-voltage switching) Silicon PNP epitaxial planar type For low-voltage switching ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw | Panasonic 松下 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Low collector saturation voltage • High speed switching APPLICATIONS • For low-voltage switching applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Low collector saturation voltage • High speed switching APPLICATIONS • For low-voltage switching applications | SAVANTIC | | ||
Silicon PNP Power Transistor DESCRIPTION • High-speed Switching • Low Collector to Emitter Saturation Voltage : VCE(sat)= -0.6V(Max.)@lc= -10A • Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw APPLICATIONS • Designed for low-voltage switching and general purpose appli | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Low collector saturation voltage • High speed switching APPLICATIONS • For low-voltage switching applications | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Low collector saturation voltage • High speed switching APPLICATIONS • For low-voltage switching applications | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Low collector saturation voltage • High speed switching APPLICATIONS • For low-voltage switching applications | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Low collector saturation voltage • High speed switching APPLICATIONS • For low-voltage switching applications | ISC 无锡固电 | | ||
Silicon PNP epitaxial planar type(For low-voltage switching) Silicon PNP epitaxial planar type For low-voltage switching ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw | Panasonic 松下 | | ||
Silicon PNP epitaxial planar type(For low-freauency power amplification) For low-freauency power amplification ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Full-pack package with outstanding insulation, which can be in stalled to the heat sink with one screw | Panasonic 松下 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Low collector saturation voltage ·Good linearity of hFE APPLICATIONS ·For low-voltage switching applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Low collector saturation voltage ·Good linearity of hFE APPLICATIONS ·For low-voltage switching applications | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Low collector saturation voltage ·Good linearity of hFE APPLICATIONS ·For low-voltage switching applications | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Low collector saturation voltage ·Good linearity of hFE APPLICATIONS ·For low-voltage switching applications | ISC 无锡固电 | | ||
Silicon PNP epitaxial planar type(For low-freauency power amplification) For low-freauency power amplification ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Full-pack package with outstanding insulation, which can be in stalled to the heat sink with one screw | Panasonic 松下 | | ||
Silicon PNP epitaxial planar type(For power switching) Silicon PNP epitaxial planar type For power switching ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector current IC ● Full-pack package with outstanding insulation, which can be installed to the he | Panasonic 松下 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Large collector current IC • Low collector saturation voltage. • Good linearity of hFE APPLICATIONS • For power switching applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Large collector current IC • Low collector saturation voltage. • Good linearity of hFE APPLICATIONS • For power switching applications | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Large collector current IC ·Low collector saturation voltage. ·Complement to type 2SD2469 APPLICATIONS ·For power switching applications | SAVANTIC | | ||
Silicon PNP Power Transistor DESCRIPTION • Large Collector Current • Satisfactory Linearity of Foward Current Transfer Ratio • Low Collector to Emitter Saturation Voltage : VCE(sat)= -0.5V(Max.)@lc= -5A • Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw • Compl | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Large collector current IC ·Low collector saturation voltage. ·Complement to type 2SD2469 APPLICATIONS ·For power switching applications | ISC 无锡固电 | | ||
Silicon PNP epitaxial planar type(For power switching) For power switching Complementary to 2SD2469 ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector current IC ● Full-pack package with outstanding insulation, which can be installed to the heat sink w | Panasonic 松下 | | ||
Silicon PNP epitaxial planer type(For low-frequency amplification) For low-frequency amplification Complementary to 2SD2474 ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga zine packing. | Panasonic 松下 | | ||
MEDIUM POWER TRANSISTER Medium Power Transistor (Motor or Relay drive)(-80V, -4A) Power Transistor (80V, 4A) | ROHM 罗姆 | | ||
TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE) | ROHM 罗姆 | | ||
TRANSISTOR (MICRO MOTOR DRIVE, HAMMER DRIVE, SUPER SWITCHING, AMPLIFIER APLICATIONS) Micro Motor Drive, Hammer Drive Applications Power Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1 A, IB = −1 mA) | TOSHIBA 东芝 | | ||
Silicon PNP epitaxial planer type(For power amplification) Silicon PNP epitaxial planer type For power amplification ■ Features • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: >5 kV | Panasonic 松下 | | ||
For Power Amplification Silicon PNP epitaxial planar type For power amplification ■Features •High forward current transfer ratio hFE •Satisfactory linearity of forward current transfer ratio hFE •Dielectric breakdown voltage of the package: >5 kV | Panasonic 松下 | | ||
Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose) Complement to type 2SD2493 Application : Audio, Series Regulator and General Purpose | Sanken 三垦 | | ||
Silicon PNP Darlington Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SD2493 APPLICATIONS ·Audio ,regulator and general purpose | ISC 无锡固电 | | ||
Silicon PNP Darlington Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SD2493 APPLICATIONS ·Audio ,regulator and general purpose | SAVANTIC | | ||
Silicon PNP Darlington Power Transistors DESCRIPTION ·With TO-3PML package ·Complement to type 2SD2494 APPLICATIONS ·Audio ,regulator and general purpose | JMNIC 锦美电子 | | ||
Silicon PNP Darlington Power Transistors DESCRIPTION ·With TO-3PML package ·Complement to type 2SD2494 APPLICATIONS ·Audio ,regulator and general purpose | SAVANTIC | | ||
Silicon PNP Darlington Power Transistors DESCRIPTION ·With TO-3PML package ·Complement to type 2SD2494 APPLICATIONS ·Audio ,regulator and general purpose | ISC 无锡固电 | | ||
Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose) Complement to type 2SD2494 Application : Audio, Series Regulator and General Purpose | Sanken 三垦 | | ||
Silicon PNP Darlington Power Transistors DESCRIPTION • With TO-220F package • Complement to type 2SD2495 APPLICATIONS • For audio,series regulator and general purpose applications | ISC 无锡固电 | | ||
Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose) Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2495) Application : Audio, Series Regulator and General Purpose | Sanken 三垦 | | ||
Silicon PNP Darlington Power Transistors DESCRIPTION • With TO-220F package • Complement to type 2SD2495 APPLICATIONS • For audio,series regulator and general purpose applications | JMNIC 锦美电子 | | ||
Silicon PNP Darlington Power Transistor DESCRIPTION • High DC Current Gain • Low-Collector Saturation Voltage • Complement to Type 2SD2495 APPLICATIONS • Designed for audio.series regulator and general purpose applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Darlington Power Transistors DESCRIPTION • With TO-220F package • Complement to type 2SD2495 APPLICATIONS • For audio,series regulator and general purpose applications | SAVANTIC | | ||
PNP Silicon Epitaxial Transistor ■ Features ● High current capacitance ● Low collector saturation voltage | KEXIN 科信电子 | | ||
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SB1628 features high current capacity in small dimension and is ideal for DC/DC converters and mortor drivers. FEATURES • High current capacitance • Low collector saturation voltage | NEC 瑞萨 | | ||
Silicon PNP epitaxial planar type(For power amplification) For power amplification ■Features ● High foward current transfer ratio hFE ● Satisfactory linearity of foward current transfer ratio hFE ● Full-pack package with outstanding insulation, which can be in stalled to the heat sink with one screw | Panasonic 松下 | | ||
Silicon PNP epitaxial planar type(For power amplification) Silicon PNP epitaxial planar type For power amplification ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Allowing automatic insertion with radial taping | Panasonic 松下 | | ||
Silicon PNP epitaxial planar type(For low-voltage switching) Silicon PNP epitaxial planar type For low-voltage switching ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of sma | Panasonic 松下 | | ||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= -2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= -2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= -2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= -2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | ||
Silicon PNP epitaxial planar type(For low-voltage switching) Silicon PNP epitaxial planar type For low-voltage switching ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of sma | Panasonic 松下 | | ||
High-current gain Power Transistor (-60V, -3A) 2SB1639 ( -60V, -3A) 2SD2318, 2SD1944 (60V, 3A) High DC current gain. | ROHM 罗姆 | | ||
Silicon PNP Power Transistors DESCRIPTION • With ITO-220 package • Low collector saturation voltage • Complement to type 2SD2525 APPLICATIONS • Audio frequency power amplifier | ISC 无锡固电 | | ||
TOSHIBA Transistor Silicon PNP Triple Diffused Type Audio Frequency Power Amplifier • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2 A, IB = −0.2 A) • Collector metal (fin) is covered with mold region. • Complementary to 2SD2525 | TOSHIBA 东芝 | |
2SB16产品属性
- 类型
描述
- 型号
2SB16
- 制造商
Toshiba
- 功能描述
PNP
- 制造商
Toshiba
- 功能描述
PNP Cut Tape
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
长电 |
25+23+ |
TO-126 |
24577 |
绝对原装正品全新进口深圳现货 |
|||
NEC |
24+ |
TO-126 |
5500 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
CJ/长电 |
25+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
NEC |
25+ |
TO-126 |
2987 |
只售原装自家现货!诚信经营!欢迎来电 |
|||
NEC |
25+ |
TO-126 |
860000 |
明嘉莱只做原装正品现货 |
|||
CJ |
20+ |
TO252 |
32970 |
原装优势主营型号-可开原型号增税票 |
|||
NEC |
18+ |
TO-126 |
85600 |
保证进口原装可开17%增值税发票 |
|||
NEC |
2447 |
TO-126 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
长电 |
22+ |
TO-126 |
20000 |
公司只有原装 品质保证 |
|||
CJ/长电 |
25+ |
TO-252-2L |
54648 |
百分百原装现货 实单必成 欢迎询价 |
2SB16芯片相关品牌
2SB16规格书下载地址
2SB16参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2SB1640
- 2SB1639
- 2SB1638
- 2SB1631
- 2SB1629
- 2SB1628
- 2SB1626
- 2SB1625
- 2SB1624
- 2SB1623
- 2SB1621
- 2SB162
- 2SB1619
- 2SB1618
- 2SB1617
- 2SB1616
- 2SB1614
- 2SB1612
- 2SB1611
- 2SB1610
- 2SB161
- 2SB1607
- 2SB1606
- 2SB1605A
- 2SB1605
- 2SB1604A
- 2SB1604
- 2SB1603A
- 2SB1603
- 2SB1602
- 2SB160
- 2SB1599
- 2SB1596Q
- 2SB1596P
- 2SB1596N
- 2SB1596
- 2SB1595R
- 2SB1595Q
- 2SB1595P
- 2SB1595
- 2SB1594
- 2SB1593
- 2SB1592
- 2SB1590K
- 2SB159
- 2SB1589
- 2SB1588
- 2SB1587
- 2SB1586
- 2SB1585
- 2SB1584
- 2SB1583
- 2SB1580
- 2SB1578
- 2SB1574
- 2SB1572
- 2SB1571
- 2SB1570
- 2SB1569
- 2SB1568
- 2SB1567
- 2SB1566
- 2SB1565
2SB16数据表相关新闻
2SB562L-TO92NLK-B-TG_UTC代理商
2SB562L-TO92NLK-B-TG_UTC代理商
2023-3-142SB776L-TO252R-P-TG_UTC代理商
2SB776L-TO252R-P-TG_UTC代理商
2023-2-242SA928AL-TO92NLB-Y-TG
2SA928AL-TO92NLB-Y-TG
2023-2-12SA812-T1B-A/S6 原装正品现货
支持实单 价格优势 有单必成
2022-3-302SB649 MOS
www.jskj-ic.com
2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
