2SB16晶体管资料

  • 2SB16别名:2SB16三极管、2SB16晶体管、2SB16晶体三极管

  • 2SB16生产厂家:日本富士通公司

  • 2SB16制作材料:Ge-PNP

  • 2SB16性质:低频或音频放大 (LF)

  • 2SB16封装形式:直插封装

  • 2SB16极限工作电压:16V

  • 2SB16最大电流允许值:0.6A

  • 2SB16最大工作频率:<1MHZ或未知

  • 2SB16引脚数:2

  • 2SB16最大耗散功率:1.8W

  • 2SB16放大倍数

  • 2SB16图片代号:D-90

  • 2SB16vtest:16

  • 2SB16htest:999900

  • 2SB16atest:0.6

  • 2SB16wtest:1.8

  • 2SB16代换 2SB16用什么型号代替:AD162,AD262,2SB493,3AK51,

2SB16价格

参考价格:¥13.0588

型号:2SB1647 品牌:Sanken 备注:这里有2SB16多少钱,2025年最近7天走势,今日出价,今日竞价,2SB16批发/采购报价,2SB16行情走势销售排行榜,2SB16报价。
型号 功能描述 生产厂家 企业 LOGO 操作

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

POWER AMPLIFIER APPLICATIONS • High DC Current Gain : hFE(1) = 300- 1000 • Low Collector Saturation Voltage : VCE(sat) = -0.5V(Typ.) • Complementary to 2SD2462

TOSHIBA

东芝

Silicon PNP epitaxial planar type(For low-voltage switching)

Silicon PNP epitaxial planar type For low-voltage switching ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw

Panasonic

松下

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage • High speed switching APPLICATIONS • For low-voltage switching applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage • High speed switching APPLICATIONS • For low-voltage switching applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage • High speed switching APPLICATIONS • For low-voltage switching applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage • High speed switching APPLICATIONS • For low-voltage switching applications

ISC

无锡固电

Silicon PNP epitaxial planar type(For low-voltage switching)

Silicon PNP epitaxial planar type For low-voltage switching ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw

Panasonic

松下

Silicon PNP epitaxial planar type(For low-voltage switching)

Silicon PNP epitaxial planar type For low-voltage switching ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw

Panasonic

松下

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage • High speed switching APPLICATIONS • For low-voltage switching applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage • High speed switching APPLICATIONS • For low-voltage switching applications

SAVANTIC

Silicon PNP Power Transistor

DESCRIPTION • High-speed Switching • Low Collector to Emitter Saturation Voltage : VCE(sat)= -0.6V(Max.)@lc= -10A • Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw APPLICATIONS • Designed for low-voltage switching and general purpose appli

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage • High speed switching APPLICATIONS • For low-voltage switching applications

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage • High speed switching APPLICATIONS • For low-voltage switching applications

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage • High speed switching APPLICATIONS • For low-voltage switching applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage • High speed switching APPLICATIONS • For low-voltage switching applications

ISC

无锡固电

Silicon PNP epitaxial planar type(For low-voltage switching)

Silicon PNP epitaxial planar type For low-voltage switching ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw

Panasonic

松下

Silicon PNP epitaxial planar type(For low-freauency power amplification)

For low-freauency power amplification ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Full-pack package with outstanding insulation, which can be in stalled to the heat sink with one screw

Panasonic

松下

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Low collector saturation voltage ·Good linearity of hFE APPLICATIONS ·For low-voltage switching applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Low collector saturation voltage ·Good linearity of hFE APPLICATIONS ·For low-voltage switching applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Low collector saturation voltage ·Good linearity of hFE APPLICATIONS ·For low-voltage switching applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Low collector saturation voltage ·Good linearity of hFE APPLICATIONS ·For low-voltage switching applications

ISC

无锡固电

Silicon PNP epitaxial planar type(For low-freauency power amplification)

For low-freauency power amplification ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Full-pack package with outstanding insulation, which can be in stalled to the heat sink with one screw

Panasonic

松下

Silicon PNP epitaxial planar type(For power switching)

Silicon PNP epitaxial planar type For power switching ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector current IC ● Full-pack package with outstanding insulation, which can be installed to the he

Panasonic

松下

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Large collector current IC • Low collector saturation voltage. • Good linearity of hFE APPLICATIONS • For power switching applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Large collector current IC • Low collector saturation voltage. • Good linearity of hFE APPLICATIONS • For power switching applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Large collector current IC ·Low collector saturation voltage. ·Complement to type 2SD2469 APPLICATIONS ·For power switching applications

SAVANTIC

Silicon PNP Power Transistor

DESCRIPTION • Large Collector Current • Satisfactory Linearity of Foward Current Transfer Ratio • Low Collector to Emitter Saturation Voltage : VCE(sat)= -0.5V(Max.)@lc= -5A • Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw • Compl

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Large collector current IC ·Low collector saturation voltage. ·Complement to type 2SD2469 APPLICATIONS ·For power switching applications

ISC

无锡固电

Silicon PNP epitaxial planar type(For power switching)

For power switching Complementary to 2SD2469 ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector current IC ● Full-pack package with outstanding insulation, which can be installed to the heat sink w

Panasonic

松下

Silicon PNP epitaxial planer type(For low-frequency amplification)

For low-frequency amplification Complementary to 2SD2474 ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga zine packing.

Panasonic

松下

MEDIUM POWER TRANSISTER

Medium Power Transistor (Motor or Relay drive)(-80V, -4A) Power Transistor (80V, 4A)

ROHM

罗姆

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHM

罗姆

TRANSISTOR (MICRO MOTOR DRIVE, HAMMER DRIVE, SUPER SWITCHING, AMPLIFIER APLICATIONS)

Micro Motor Drive, Hammer Drive Applications Power Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1 A, IB = −1 mA)

TOSHIBA

东芝

Silicon PNP epitaxial planer type(For power amplification)

Silicon PNP epitaxial planer type For power amplification ■ Features • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: >5 kV

Panasonic

松下

For Power Amplification

Silicon PNP epitaxial planar type For power amplification ■Features •High forward current transfer ratio hFE •Satisfactory linearity of forward current transfer ratio hFE •Dielectric breakdown voltage of the package: >5 kV

Panasonic

松下

Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose)

Complement to type 2SD2493 Application : Audio, Series Regulator and General Purpose

Sanken

三垦

Silicon PNP Darlington Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type 2SD2493 APPLICATIONS ·Audio ,regulator and general purpose

SAVANTIC

Silicon PNP Darlington Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type 2SD2493 APPLICATIONS ·Audio ,regulator and general purpose

ISC

无锡固电

Silicon PNP Darlington Power Transistors

DESCRIPTION ·With TO-3PML package ·Complement to type 2SD2494 APPLICATIONS ·Audio ,regulator and general purpose

JMNIC

锦美电子

Silicon PNP Darlington Power Transistors

DESCRIPTION ·With TO-3PML package ·Complement to type 2SD2494 APPLICATIONS ·Audio ,regulator and general purpose

SAVANTIC

Silicon PNP Darlington Power Transistors

DESCRIPTION ·With TO-3PML package ·Complement to type 2SD2494 APPLICATIONS ·Audio ,regulator and general purpose

ISC

无锡固电

Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose)

Complement to type 2SD2494 Application : Audio, Series Regulator and General Purpose

Sanken

三垦

Silicon PNP Darlington Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2495 APPLICATIONS • For audio,series regulator and general purpose applications

ISC

无锡固电

Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose)

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2495) Application : Audio, Series Regulator and General Purpose

Sanken

三垦

Silicon PNP Darlington Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2495 APPLICATIONS • For audio,series regulator and general purpose applications

JMNIC

锦美电子

Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain • Low-Collector Saturation Voltage • Complement to Type 2SD2495 APPLICATIONS • Designed for audio.series regulator and general purpose applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Darlington Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2495 APPLICATIONS • For audio,series regulator and general purpose applications

SAVANTIC

PNP Silicon Epitaxial Transistor

■ Features ● High current capacitance ● Low collector saturation voltage

KEXIN

科信电子

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SB1628 features high current capacity in small dimension and is ideal for DC/DC converters and mortor drivers. FEATURES • High current capacitance • Low collector saturation voltage

NEC

瑞萨

Silicon PNP epitaxial planar type(For power amplification)

For power amplification ■Features ● High foward current transfer ratio hFE ● Satisfactory linearity of foward current transfer ratio hFE ● Full-pack package with outstanding insulation, which can be in stalled to the heat sink with one screw

Panasonic

松下

Silicon PNP epitaxial planar type(For power amplification)

Silicon PNP epitaxial planar type For power amplification ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Allowing automatic insertion with radial taping

Panasonic

松下

Silicon PNP epitaxial planar type(For low-voltage switching)

Silicon PNP epitaxial planar type For low-voltage switching ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of sma

Panasonic

松下

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= -2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= -2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= -2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= -2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon PNP epitaxial planar type(For low-voltage switching)

Silicon PNP epitaxial planar type For low-voltage switching ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of sma

Panasonic

松下

High-current gain Power Transistor (-60V, -3A)

2SB1639 ( -60V, -3A) 2SD2318, 2SD1944 (60V, 3A) High DC current gain.

ROHM

罗姆

Silicon PNP Power Transistors

DESCRIPTION • With ITO-220 package • Low collector saturation voltage • Complement to type 2SD2525 APPLICATIONS • Audio frequency power amplifier

ISC

无锡固电

TOSHIBA Transistor Silicon PNP Triple Diffused Type

Audio Frequency Power Amplifier • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2 A, IB = −0.2 A) • Collector metal (fin) is covered with mold region. • Complementary to 2SD2525

TOSHIBA

东芝

2SB16产品属性

  • 类型

    描述

  • 型号

    2SB16

  • 制造商

    Toshiba

  • 功能描述

    PNP

  • 制造商

    Toshiba

  • 功能描述

    PNP Cut Tape

更新时间:2025-12-25 18:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
NA/
5400
原装现货,当天可交货,原型号开票
NEC
24+
TO-126
5500
只做原装正品现货 欢迎来电查询15919825718
长电
22+
TO-126
20000
公司只有原装 品质保证
NEC
25+
TO-126
860000
明嘉莱只做原装正品现货
CJ
20+
TO252
32970
原装优势主营型号-可开原型号增税票
CJ/长电
21+
TO-126
30000
百域芯优势 实单必成 可开13点增值税发票
NEC
23+
TO-126
20000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
长电
25+23+
TO-126
24577
绝对原装正品全新进口深圳现货
NEC
24+
TO-126
50000
CJ/长电
24+
TO-126
50000
只做原装,欢迎询价,量大价优

2SB16数据表相关新闻