2SB155晶体管资料
2SB155别名：2SB155三极管、2SB155晶体管、2SB155晶体三极管
2SB155生产厂家：日本日立公司
2SB155制作材料：Ge-PNP
2SB155性质：低频或音频放大 （LF）_TR_输出极 （E）
2SB155封装形式：直插封装
2SB155极限工作电压：16V
2SB155最大电流允许值：0.3A
2SB155最大工作频率：<1MHZ或未知
2SB155引脚数：3
2SB155最大耗散功率：0.15W
2SB155放大倍数：
2SB155图片代号：C-47
2SB155vtest：16
2SB155htest：999900
- 2SB155atest：0.3
2SB155wtest：0.15
2SB155代换 2SB155用什么型号代替：AC128,AC153,AC188,2N1189,2N1190,2SB405,2SB475,3AX53A,
2SB155价格
参考价格：￥8.9037
型号：2SB1559 品牌：Sanken 备注：这里有2SB155多少钱，2025年最近7天走势，今日出价，今日竞价，2SB155批发/采购报价，2SB155行情走势销售排行榜，2SB155报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE) | ROHM 罗姆 |   | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220C package • High DC current gain • DARLINGTON APPLICATIONS • For medium speed and power switching applications | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220C package • High DC current gain • DARLINGTON APPLICATIONS • For medium speed and power switching applications | ISC 无锡固电 | | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) • High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V; IC= -5A) APPLICATIONS • Designed for power amplifier applications. | ISC 无锡固电 | | ||
TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE) | ROHM 罗姆 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • DARLINGTON APPLICATIONS • For medium speed and power switching applications | SAVANTIC | | ||
Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -8OV(Min) • High DC Current Gain- • Built-in resistor between base and emitter • Built-in damper diode APPLICATIONS • Designed for power amplifier applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
Silicon PNP epitaxial planar type(For power amplification) Silicon PNP epitaxial planar type For power amplification ■ Features ● High foward current transfer ratio hFE ● Satisfactory linearity of foward current transfer ratio hFE ● Allowing automatic insertion with radial taping | Panasonic 松下 | | ||
Silicon PNP epitaxial planar type(For power amplification) Silicon PNP epitaxial planar type For power amplification ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Allowing automatic insertion with radial taping | Panasonic 松下 | | ||
TRANSISTOR (POWER AMPLIFIER APPLICATIONS) POWER AMPLIFIER APPLICATIONS • High Breakdown Voltage : VCEO = -140V (Min) • Complementary to 2SD2384 | TOSHIBA 东芝 | | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·High DC Current Gain- : hFE= 5000(Min)@IC= -6A ·Complement to Type 2SD2384 APPLICATIONS ·Designed for power amplifier applications | ISC 无锡固电 | | ||
TRANSISTOR (POWER AMPLIFIER APPLICATIONS) Power Amplifier Applications • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2385 | TOSHIBA 东芝 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PL package • Complement to type 2SD2385 • High DC current gain • Low collector saturation voltage • DARLINGTON APPLICATIONS • For power amplifier applications | SAVANTIC | | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) • High DC Current Gain- : hFE= 5000(Min)@IC= -7A • Complement to Type 2SD2385 APPLICATIONS • Designed for power amplifier applications | ISC 无锡固电 | | ||
TRANSISTOR (POWER AMPLIFIER APPLICATIONS) Power Amplifier Applications • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2386 | TOSHIBA 东芝 | | ||
TRANSISTOR (POWER AMPLIFIER APPLICATIONS) Power Amplifier Applications • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2387 | TOSHIBA 东芝 | | ||
Silicon PNP Darlington Power Transistors DESCRIPTION • With TO-3PI package • Complement to type 2SD2387 APPLICATIONS • For power amplifier applications | SAVANTIC | | ||
Silicon PNP Darlington Power Transistors DESCRIPTION • With TO-3PI package • Complement to type 2SD2387 APPLICATIONS • For power amplifier applications | ISC 无锡固电 | | ||
Silicon PNP Darlington Power Transistors DESCRIPTION • With TO-3PI package • Complement to type 2SD2387 APPLICATIONS • For power amplifier applications | JMNIC 锦美电子 | | ||
Silicon PNP Darlington Power Transistor DESCRIPTION • High DC Current Gain- : hFE= 5000(Min)@lc= -7A • Low-Collector Saturation Voltage- : VCE(satr -2.5V(Max.)@lc= -7A • Complement to Type 2SD2387 APPLICATIONS • Designed for power amplifier applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
Silicon PNP Darlington Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SD2389 APPLICATIONS ·Audio ,regulator and general purpose | ISC 无锡固电 | | ||
Silicon PNP Darlington Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SD2389 APPLICATIONS ·Audio ,regulator and general purpose | JMNIC 锦美电子 | | ||
Silicon PNP Darlington Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SD2389 APPLICATIONS ·Audio ,regulator and general purpose | SAVANTIC | | ||
Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose) Complement to type 2SD2389 Application : Audio, Series Regulator and General Purpose | Sanken 三垦 | | ||
Silicon PNP Power Transistors 文件：90.51 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon PNP Power Transistors 文件：120.83 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon PNP Power Transistors 文件：114.71 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon PNP Darlington Power Transistors 文件：127.18 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon PNP Darlington Power Transistors 文件：161.14 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon PNP Darlington Power Transistors 文件：161.14 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon PNP Epitaxial Planar Transistor 文件：35.72 Kbytes Page：1 Pages | Sanken 三垦 | | ||
Silicon PNP Darlington Power Transistors 文件：175.29 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon PNP Darlington Power Transistor 文件：134.24 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
封装/外壳：TO-3P-3，SC-65-3 包装：管件 描述：TRANS PNP DARL 150V 8A TO3P 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Sanken 三垦 | | ||
Silicon PNP Epitaxial Planar Transistor 文件：35.25 Kbytes Page：1 Pages | Sanken 三垦 | | ||
Silicon PNP Darlington Power Transistors 文件：193.99 Kbytes Page：4 Pages | JMNIC 锦美电子 | | ||
Silicon PNP Darlington Power Transistors 文件：193.99 Kbytes Page：4 Pages | JMNIC 锦美电子 | |
2SB155产品属性
- 类型
描述
- 型号
2SB155
- 制造商
Toshiba America Electronic Components
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANKEN |
24+ |
TO-3P |
990000 |
明嘉莱只做原装正品现货 |
|||
SANKEN |
2016+ |
TO247 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
SANKEN |
20+ |
TO-218 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
TOSHIBA/东芝 |
22+ |
TO-3PL |
25000 |
只做原装进口现货,专注配单 |
|||
MAT |
24+ |
90000 |
|||||
TOS |
1738+ |
TO-3P |
8529 |
科恒伟业!只做原装正品,假一赔十! |
|||
SANKEN |
23+ |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
||||
SANKEN |
25+ |
TO-3P |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
SANKEN |
21+ |
TO-3P |
268 |
原装现货假一赔十 |
|||
TOSHIBA/东芝 |
22+ |
TO-3PL |
6000 |
十年配单,只做原装 |
2SB155规格书下载地址
2SB155参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2SB1572
- 2SB1571
- 2SB1570
- 2SB1569
- 2SB1568
- 2SB1567
- 2SB1566
- 2SB1565F
- 2SB1565E
- 2SB1565D
- 2SB1565
- 2SB1562
- 2SB1561Q
- 2SB1561P
- 2SB1561
- 2SB1560
- 2SB156(H)
- 2SB1559
- 2SB1558
- 2SB1557
- 2SB1556
- 2SB1555
- 2SB1554
- 2SB1553
- 2SB1551
- 2SB1550
- 2SB1549
- 2SB1548
- 2SB1546
- 2SB1545
- 2SB1544
- 2SB1543
- 2SB1542
- 2SB1541
- 2SB154
- 2SB1539
- 2SB1538
- 2SB1537
- 2SB1536
- 2SB1535(F5)
- 2SB1535
- 2SB1532
- 2SB1531
- 2SB1530
- 2SB153
- 2SB1529
- 2SB1527
- 2SB1517
- 2SB1515
- 2SB1514
- 2SB1513
- 2SB1512
- 2SB1511
- 2SB1510
- 2SB1509
- 2SB1508
- 2SB1507
- 2SB1505
- 2SB1504
- 2SB1503
2SB155数据表相关新闻
2SB562L-TO92NLK-B-TG_UTC代理商
2SB562L-TO92NLK-B-TG_UTC代理商
2023-3-142SB776L-TO252R-P-TG_UTC代理商
2SB776L-TO252R-P-TG_UTC代理商
2023-2-242SA928AL-TO92NLB-Y-TG
2SA928AL-TO92NLB-Y-TG
2023-2-12SA812-T1B-A/S6 原装正品现货
支持实单 价格优势 有单必成
2022-3-302SB649 MOS
www.jskj-ic.com
2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
