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2SB155晶体管资料

  • 2SB155别名:2SB155三极管、2SB155晶体管、2SB155晶体三极管

  • 2SB155生产厂家:日本日立公司

  • 2SB155制作材料:Ge-PNP

  • 2SB155性质:低频或音频放大 (LF)_TR_输出极 (E)

  • 2SB155封装形式:直插封装

  • 2SB155极限工作电压:16V

  • 2SB155最大电流允许值:0.3A

  • 2SB155最大工作频率:<1MHZ或未知

  • 2SB155引脚数:3

  • 2SB155最大耗散功率:0.15W

  • 2SB155放大倍数

  • 2SB155图片代号:C-47

  • 2SB155vtest:16

  • 2SB155htest:999900

  • 2SB155atest:0.3

  • 2SB155wtest:0.15

  • 2SB155代换 2SB155用什么型号代替:AC128,AC153,AC188,2N1189,2N1190,2SB405,2SB475,3AX53A,

2SB155价格

参考价格:¥8.9037

型号:2SB1559 品牌:Sanken 备注:这里有2SB155多少钱,2026年最近7天走势,今日出价,今日竞价,2SB155批发/采购报价,2SB155行情走势销售排行榜,2SB155报价。
型号 功能描述 生产厂家 企业 LOGO 操作

丝印代码:C7;TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHM

罗姆

Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • High DC current gain • DARLINGTON APPLICATIONS • For medium speed and power switching applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • High DC current gain • DARLINGTON APPLICATIONS • For medium speed and power switching applications

ISC

无锡固电

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) • High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V; IC= -5A) APPLICATIONS • Designed for power amplifier applications.

ISC

无锡固电

丝印代码:C7;TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHM

罗姆

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • High DC current gain • DARLINGTON APPLICATIONS • For medium speed and power switching applications

SAVANTIC

Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -8OV(Min) • High DC Current Gain- • Built-in resistor between base and emitter • Built-in damper diode APPLICATIONS • Designed for power amplifier applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP epitaxial planar type(For power amplification)

Silicon PNP epitaxial planar type For power amplification ■ Features ● High foward current transfer ratio hFE ● Satisfactory linearity of foward current transfer ratio hFE ● Allowing automatic insertion with radial taping

PANASONIC

松下

Silicon PNP epitaxial planar type(For power amplification)

Silicon PNP epitaxial planar type For power amplification ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Allowing automatic insertion with radial taping

PANASONIC

松下

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

POWER AMPLIFIER APPLICATIONS • High Breakdown Voltage : VCEO = -140V (Min) • Complementary to 2SD2384

TOSHIBA

东芝

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·High DC Current Gain- : hFE= 5000(Min)@IC= -6A ·Complement to Type 2SD2384 APPLICATIONS ·Designed for power amplifier applications

ISC

无锡固电

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2385

TOSHIBA

东芝

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SD2385 • High DC current gain • Low collector saturation voltage • DARLINGTON APPLICATIONS • For power amplifier applications

SAVANTIC

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) • High DC Current Gain- : hFE= 5000(Min)@IC= -7A • Complement to Type 2SD2385 APPLICATIONS • Designed for power amplifier applications

ISC

无锡固电

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2386

TOSHIBA

东芝

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2387

TOSHIBA

东芝

Silicon PNP Darlington Power Transistors

DESCRIPTION • With TO-3PI package • Complement to type 2SD2387 APPLICATIONS • For power amplifier applications

SAVANTIC

Silicon PNP Darlington Power Transistors

DESCRIPTION • With TO-3PI package • Complement to type 2SD2387 APPLICATIONS • For power amplifier applications

ISC

无锡固电

Silicon PNP Darlington Power Transistors

DESCRIPTION • With TO-3PI package • Complement to type 2SD2387 APPLICATIONS • For power amplifier applications

JMNIC

锦美电子

Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 5000(Min)@lc= -7A • Low-Collector Saturation Voltage- : VCE(satr -2.5V(Max.)@lc= -7A • Complement to Type 2SD2387 APPLICATIONS • Designed for power amplifier applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Darlington Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type 2SD2389 APPLICATIONS ·Audio ,regulator and general purpose

ISC

无锡固电

Silicon PNP Darlington Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type 2SD2389 APPLICATIONS ·Audio ,regulator and general purpose

JMNIC

锦美电子

Silicon PNP Darlington Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type 2SD2389 APPLICATIONS ·Audio ,regulator and general purpose

SAVANTIC

Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose)

Complement to type 2SD2389 Application : Audio, Series Regulator and General Purpose

SANKEN

三垦

Silicon PNP Power Transistors

文件:90.51 Kbytes Page:3 Pages

SAVANTIC

Silicon PNP Power Transistors

文件:120.83 Kbytes Page:3 Pages

SAVANTIC

Silicon PNP epitaxial planar type(For power amplification)

PANASONIC

松下

TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) POWER AMPLIFIER APPLICATIONS

TOSHIBA

东芝

SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) POWER AMPLIFIER APPLICATIONS

TOSHIBA

东芝

Silicon PNP Power Transistors

文件:114.71 Kbytes Page:3 Pages

SAVANTIC

Silicon PNP Darlington Power Transistors

文件:127.18 Kbytes Page:3 Pages

SAVANTIC

Silicon PNP Darlington Power Transistors

文件:161.14 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Darlington Power Transistors

文件:161.14 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Epitaxial Planar Transistor

文件:35.72 Kbytes Page:1 Pages

SANKEN

三垦

Silicon PNP Darlington Power Transistors

文件:175.29 Kbytes Page:3 Pages

SAVANTIC

Silicon PNP Darlington Power Transistor

文件:134.24 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

封装/外壳:TO-3P-3,SC-65-3 包装:管件 描述:TRANS PNP DARL 150V 8A TO3P 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

SANKEN

三垦

Silicon PNP Epitaxial Planar Transistor

文件:35.25 Kbytes Page:1 Pages

SANKEN

三垦

Silicon PNP Darlington Power Transistors

文件:193.99 Kbytes Page:4 Pages

JMNIC

锦美电子

Silicon PNP Darlington Power Transistors

文件:193.99 Kbytes Page:4 Pages

JMNIC

锦美电子

2SB155产品属性

  • 类型

    描述

  • IC:

    -8A

  • PC:

    80W

  • hFEmin:

    5000

  • hFEmax:

    30000

  • hFE条件VCE:

    -4V

  • hFE条件IC:

    -6A

  • VCE(sat)max:

    -2.5V

  • 配对:

    2SD2389

更新时间:2026-5-14 12:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SANKEN
24+
TO247
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
SANKEN
2026+
TO-3P
54648
百分百原装现货 实单必成 欢迎询价
SANKEN
TO247
53650
一级代理 原装正品假一罚十价格优势长期供货
SANKEN
26+
TO247
86720
全新原装正品价格最实惠 假一赔百
SANKEN
2016+
TO247
9000
只做原装,假一罚十,公司可开17%增值税发票!
SANKEN
23+
TO-3P
8650
受权代理!全新原装现货特价热卖!
SANKEN
20+
TO-218
38900
原装优势主营型号-可开原型号增税票
SANKEN
23+
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
26+
N/A
75000
一级代理-主营优势-实惠价格-不悔选择
SANKEN
25+
TO-3P
880000
明嘉莱只做原装正品现货

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