2SB155晶体管资料
2SB155别名:2SB155三极管、2SB155晶体管、2SB155晶体三极管
2SB155生产厂家:日本日立公司
2SB155制作材料:Ge-PNP
2SB155性质:低频或音频放大 (LF)_TR_输出极 (E)
2SB155封装形式:直插封装
2SB155极限工作电压:16V
2SB155最大电流允许值:0.3A
2SB155最大工作频率:<1MHZ或未知
2SB155引脚数:3
2SB155最大耗散功率:0.15W
2SB155放大倍数:
2SB155图片代号:C-47
2SB155vtest:16
2SB155htest:999900
- 2SB155atest:.3
2SB155wtest:.15
2SB155代换 2SB155用什么型号代替:AC128,AC153,AC188,2N1189,2N1190,2SB405,2SB475,3AX53A,
2SB155价格
参考价格:¥8.9037
型号:2SB1559 品牌:Sanken 备注:这里有2SB155多少钱,2024年最近7天走势,今日出价,今日竞价,2SB155批发/采购报价,2SB155行情走势销售排行榜,2SB155报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Cpackage •HighDCcurrentgain •DARLINGTON APPLICATIONS •Formediumspeedandpowerswitchingapplications | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Cpackage •HighDCcurrentgain •DARLINGTON APPLICATIONS •Formediumspeedandpowerswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-80V(Min) •HighDCCurrentGain-:hFE=1000(Min)@(VCE=-3V;IC=-5A) APPLICATIONS •Designedforpoweramplifierapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Fapackage •HighDCcurrentgain •DARLINGTON APPLICATIONS •Formediumspeedandpowerswitchingapplications | SAVANTIC Savantic, Inc. | |||
SiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-8OV(Min) •HighDCCurrentGain- •Built-inresistorbetweenbaseandemitter •Built-indamperdiode APPLICATIONS •Designedforpoweramplifierapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconPNPepitaxialplanartype(Forpoweramplification) SiliconPNPepitaxialplanartype Forpoweramplification ■Features ●HighfowardcurrenttransferratiohFE ●SatisfactorylinearityoffowardcurrenttransferratiohFE ●Allowingautomaticinsertionwithradialtaping | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconPNPepitaxialplanartype(Forpoweramplification) SiliconPNPepitaxialplanartype Forpoweramplification ■Features ●HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity ●Allowingautomaticinsertionwithradialtaping | PanasonicPanasonic Corporation 松下松下电器 | |||
TRANSISTOR(POWERAMPLIFIERAPPLICATIONS) POWERAMPLIFIERAPPLICATIONS •HighBreakdownVoltage:VCEO=-140V(Min) •Complementaryto2SD2384 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-140V(Min) ·HighDCCurrentGain- :hFE=5000(Min)@IC=-6A ·ComplementtoType2SD2384 APPLICATIONS ·Designedforpoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
TRANSISTOR(POWERAMPLIFIERAPPLICATIONS) PowerAmplifierApplications •Highbreakdownvoltage:VCEO=−140V(min) •Complementaryto2SD2385 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-3PLpackage •Complementtotype2SD2385 •HighDCcurrentgain •Lowcollectorsaturationvoltage •DARLINGTON APPLICATIONS •Forpoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-140V(Min) •HighDCCurrentGain-:hFE=5000(Min)@IC=-7A •ComplementtoType2SD2385 APPLICATIONS •Designedforpoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
TRANSISTOR(POWERAMPLIFIERAPPLICATIONS) PowerAmplifierApplications •Highbreakdownvoltage:VCEO=−140V(min) •Complementaryto2SD2386 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
TRANSISTOR(POWERAMPLIFIERAPPLICATIONS) PowerAmplifierApplications •Highbreakdownvoltage:VCEO=−140V(min) •Complementaryto2SD2387 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SiliconPNPDarlingtonPowerTransistors DESCRIPTION •WithTO-3PIpackage •Complementtotype2SD2387 APPLICATIONS •Forpoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
SiliconPNPDarlingtonPowerTransistors DESCRIPTION •WithTO-3PIpackage •Complementtotype2SD2387 APPLICATIONS •Forpoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPDarlingtonPowerTransistors DESCRIPTION •WithTO-3PIpackage •Complementtotype2SD2387 APPLICATIONS •Forpoweramplifierapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPDarlingtonPowerTransistor DESCRIPTION •HighDCCurrentGain-:hFE=5000(Min)@lc=-7A •Low-CollectorSaturationVoltage-:VCE(satr-2.5V(Max.)@lc=-7A •ComplementtoType2SD2387 APPLICATIONS •Designedforpoweramplifierapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconPNPDarlingtonPowerTransistors DESCRIPTION ·WithTO-3PNpackage ·Complementtotype2SD2389 APPLICATIONS ·Audio,regulatorandgeneralpurpose | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPDarlingtonPowerTransistors DESCRIPTION ·WithTO-3PNpackage ·Complementtotype2SD2389 APPLICATIONS ·Audio,regulatorandgeneralpurpose | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPDarlingtonPowerTransistors DESCRIPTION ·WithTO-3PNpackage ·Complementtotype2SD2389 APPLICATIONS ·Audio,regulatorandgeneralpurpose | SAVANTIC Savantic, Inc. | |||
SiliconPNPEpitaxialPlanarTransistor(Audio,SeriesRegulatorandGeneralPurpose) Complementtotype2SD2389 Application:Audio,SeriesRegulatorandGeneralPurpose | SankenSanken Electric Co Ltd. 三垦日本三垦 | |||
SiliconPNPPowerTransistors 文件:90.51 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors 文件:120.83 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors 文件:114.71 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPDarlingtonPowerTransistors 文件:127.18 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPDarlingtonPowerTransistors 文件:161.14 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPDarlingtonPowerTransistors 文件:161.14 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPEpitaxialPlanarTransistor 文件:35.72 Kbytes Page:1 Pages | SankenSanken Electric Co Ltd. 三垦日本三垦 | |||
SiliconPNPDarlingtonPowerTransistors 文件:175.29 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPDarlingtonPowerTransistor 文件:134.24 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
封装/外壳:TO-3P-3,SC-65-3 包装:管件 描述:TRANS PNP DARL 150V 8A TO3P 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | SankenSanken Electric Co Ltd. 三垦日本三垦 | |||
SiliconPNPEpitaxialPlanarTransistor 文件:35.25 Kbytes Page:1 Pages | SankenSanken Electric Co Ltd. 三垦日本三垦 | |||
SiliconPNPDarlingtonPowerTransistors 文件:193.99 Kbytes Page:4 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPDarlingtonPowerTransistors 文件:193.99 Kbytes Page:4 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 |
2SB155产品属性
- 类型
描述
- 型号
2SB155
- 制造商
Toshiba America Electronic Components
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SANKEN |
2016+ |
TO247 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
SANKEN |
20+ |
TO-218 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
TOSHIBA/东芝 |
24+ |
TO3P |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
TOS |
1738+ |
TO-3P |
8529 |
科恒伟业!只做原装正品,假一赔十! |
|||
SANKEN |
23+ |
TO-3P |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
SANKE |
22+ |
TO-3P |
360000 |
进口原装房间现货实库实数 |
|||
TOSHIBA |
TO-247 |
608900 |
原包原标签100%进口原装常备现货! |
||||
MAT |
08PB |
90000 |
|||||
SANKEN |
2020+ |
TO247 |
14981 |
公司主营品牌,全新原装现货超低价! |
|||
SANKEN |
2021+ |
TO247 |
7345 |
百分百原装正品 |
2SB155规格书下载地址
2SB155参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
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- 2SB1561
- 2SB1560
- 2SB156(H)
- 2SB1559
- 2SB1558
- 2SB1557
- 2SB1556
- 2SB1555
- 2SB1554
- 2SB1553
- 2SB1551
- 2SB1550
- 2SB1549
- 2SB1548
- 2SB1546
- 2SB1545
- 2SB1544
- 2SB1543
- 2SB1542
- 2SB1541
- 2SB154
- 2SB1539
- 2SB1538
- 2SB1537
- 2SB1536
- 2SB1535(F5)
- 2SB1535
- 2SB1532
- 2SB1531
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- 2SB1529
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- 2SB1514
- 2SB1513
- 2SB1512
- 2SB1511
- 2SB1510
- 2SB1509
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2SB155数据表相关新闻
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2023-2-12SA812-T1B-A/S6 原装正品现货
支持实单价格优势有单必成
2022-3-302SB649 MOS
www.jskj-ic.com
2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P:PNP硅外延晶体管的特点如下:·低集电极饱和电压·Execllent电流增益特性·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息)·环氧符合UL94V-0阻燃等级·Moisure敏感度等级12SB1386-P/2SB1386-Q/2SB1386-R是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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