Silicon PNP epitaxial planar type Darlington

Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2275 ■ Features ● Optimum for 55W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 5000(Min)@IC= -4A • Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -4A • Complement to Type 2SD2275 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 5000(Min)@lc= -4A • Low-Collector Saturation Voltage- : VCE(satr -2.5V(Max.)@lc= -4A • Complement to Type 2SD2275 APPLICATIONS • Designed for power amplifier applications • Optimum for 55W HiFi output applications.

Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 5000(Min)@lc= -7A • Low-Collector Saturation Voltage- : VcE • Complement to Type 2SD2276 • Complement to Type 2SD2276 APPLICATIONS • Designed for power amplifier applications • Optimum for 11OW HiFi output applications.

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PL package ·Complement to type 2SD2276 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplification ·Optimum for 110W Hi-Fi output applications

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= -7A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2276 APPLICATIONS ·Designed for power amplifier applications ·Optimum for 110W HiFi output applications.

Silicon PNP epitaxial planar type Darlington(For power amplification)

For power amplification Complementary to 2SD2276 ■ Features ● Optimum for 110W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

Silicon PNP epitaxial planar type darlington

Silicon PNP epitaxial planar type darlington For power switching • High forward current transfer ratio hFE • High-speed switching • Allowing automatic insertion with radial taping

High-Current Switching Applications

50V/7A High-Current Switching Applications Features • Low collector-to-emitter saturation voltage : VCE(sat)=(–)0.4V max. • Wide ASO and highly registant to breakdown. • Micaless package facilitating easy mounting. Applications • Relay drivers, high-speed inverters, converters.

isc Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -4A • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SD2280 APPLICATIONS • Designed for relay drivers,high-speed inverters,converters.

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • Low collector saturation voltage • Complement to type 2SD2280 • Wide area of safe operation APPLICATIONS • For use in relay drivers ,high-speed Inverters,converters

Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -4A • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SD2280 APPLICATIONS • Designed for relay drivers,high-speed inverters,converters.

Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage VCE(sat) = -0 5(V){Max)@lc= -6A • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type2SD2281 APPLICATIONS • Designed for relay drivers,high-speed inverters,converters.

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • Low collector saturation voltage • Complement to type 2SD2281 • Wide area of safe operation APPLICATIONS • For use in relay drivers ,high-speed Inverters,converters

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • Low collector saturation voltage • Complement to type 2SD2281 • Wide area of safe operation APPLICATIONS • For use in relay drivers ,high-speed Inverters,converters

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • Low collector saturation voltage • Complement to type 2SD2281 • Wide area of safe operation APPLICATIONS • For use in relay drivers ,high-speed Inverters,converters

High-Current Switching Applications

Features • Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. • Wide ASO and highly registant to breakdown. • Micaless package facilitating easy mounting. Applications • Relay drivers, high-speed inverters, converters.

High-Current Switching Applications

Features · Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V max. · Wide ASO and highly registant to breakdown. · Micaless package facilitating easy mounting. Applications · Relay drivers, high-speed inverters, converters.

isc Silicon PNP Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.5(V)(Max)@IC= -8A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2282 APPLICATIONS ·Designed for relay drivers, high-speed inverters,converters.

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PML package ·Low collector saturation voltage ·Complement to type 2SD2282 ·Wide area of safe operation APPLICATIONS ·For use in relay drivers, high-speed Inverters,converters

60V/3A Driver Applications

60V/3A Driver Applications Features · High DC current gain. · Good dependence of DC current gain. Applications · Motor drivers, hammer drivers, relay drivers.

High-Current Switching Applications

30V/20A High-Current Switching Applications Features · Low collector-to-emitter saturation voltage :VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. · Large current capacity. · Micaless package facilitating easy mounting. Applications · Relay drivers, high-speed inverters, converters.

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

Compact Motor Driver Applications???

Compact Motor Driver Applications Features · Low saturation voltage. · Contains a diode between collector and emitter. · Contains a bias resistor between base and emitter. · Large current capacity. · Compact package making it easy to realize high density, small-sized hybrid ICs

PNP Epitaxial Planar Silicon Transistors

Features Low saturation voltage. Contains a diode between collector and emitter. Contains a bias resistor between base and emitter. Large current capacity. Compact package making it easy to realize highdensity,small-sized hybrid ICs.

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-EmitterBreakdownVoltage- : V(BR)CFO=-150V(Min.) • Complement to Type 2SD2337 APPLICATIONS • Designed for low frequency power amplifier color TV vertical deflection output applications.

Power Bipolar Transistors

Silicon PNP Triple Diffused

Application Low frequency power amplifier color TV vertical deflection output complementary pair with 2SD2337

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • High VCEO • Complement to type 2SD2337 APPLICATIONS • For low frequency power amplifier color TV vertical deflection output applications

Silicon PNP Power Transistor

DESCRIPTION • Collector-EmitterBreakdownVoltage- : V(BR)CFO=-150V(Min.) • Complement to Type 2SD2337 APPLICATIONS • Designed for low frequency power amplifier color TV vertical deflection output applications.

Silicon PNP epitaxial planer typeFor low-frequency amplification)

Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2357 ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Large collector power dissipation PC. ● Mini Power type package, allowing downsizing of the equipment and automatic insertion throug

Silicon PNP Epitaxial Planar Type

Features ● Low collector to emitter saturation voltage VCE(sat). ● Large collector power dissipation PC. ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

Silicon PNP epitaxial planer type(For low-frequency amplification)

Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2359 ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Large collector power dissipation PC. ● Mini Power type package, allowing downsizing of the equipment and automatic insertion throug

Silicon PNP Epitaxial Planar Type

Features ● Low collector to emitter saturation voltage VCE(sat). ● Large collector power dissipation PC. ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

SCHOTTKY BARRIER DIODE CHIPS

DESCRIPTION ➤ 2SB154040ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ➤ Low power losses, high efficiency; ➤ Guard ring construction for transient protection; ➤ High ESD capability; ➤ High surge capability; ➤ Packaged products are widely use

SCHOTTKY BARRIER DIODE CHIPS

DESCRIPTION ➤ 2SB154060ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ➤ Low power losses, high efficiency; ➤ Guard ring construction for transient protection; ➤ High ESD capability; ➤ High surge capability; ➤ Packaged products are widely use

LOW IR SCHOTTKY BARRIER DIODE CHIPS

DESCRIPTION ➤ 2SB154100MA is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ➤ Due to special schottky barrier structure, the chips have very low reverse leakage current ( typical IR=0.002mA@ Vr=100V ) and maximum 150°C opera

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SD2374/2374A ·Low collector saturation voltage ·High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS ·For power amplifications

Silicon PNP epitaxial planar type(For power amplification)

■ Features • High forward current transfer ratio hFEwhich has satisfactory linearity • Low collector to emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw =25°

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SD2374/2374A ·Low collector saturation voltage ·High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS ·For power amplifications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SD2374/2374A ·Low collector saturation voltage ·High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS ·For power amplifications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SD2374/2374A ·Low collector saturation voltage ·High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS ·For power amplifications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SD2374/2374A ·Low collector saturation voltage ·High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS ·For power amplifications

Silicon PNP epitaxial planar type(For power amplification)

■ Features • High forward current transfer ratio hFEwhich has satisfactory linearity • Low collector to emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw =25°

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SD2374/2374A ·Low collector saturation voltage ·High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS ·For power amplifications

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • High DC current gain • DARLINGTON APPLICATIONS • For medium speed and power switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • High DC current gain • DARLINGTON APPLICATIONS • For medium speed and power switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • High DC current gain • DARLINGTON APPLICATIONS • For medium speed and power switching applications

Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -8OV(Min) • High DC Current Gain- • Built-in resistor between base and emitter • Built-in damper diode APPLICATIONS • Designed for power amplifier applications.

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) • High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V; IC= -5A) APPLICATIONS • Designed for power amplifier applications.

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

Silicon PNP epitaxial planar type(For power amplification)

Silicon PNP epitaxial planar type For power amplification ■ Features ● High foward current transfer ratio hFE ● Satisfactory linearity of foward current transfer ratio hFE ● Allowing automatic insertion with radial taping

Silicon PNP epitaxial planar type(For power amplification)

Silicon PNP epitaxial planar type For power amplification ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Allowing automatic insertion with radial taping

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

POWER AMPLIFIER APPLICATIONS • High Breakdown Voltage : VCEO = -140V (Min) • Complementary to 2SD2384

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·High DC Current Gain- : hFE= 5000(Min)@IC= -6A ·Complement to Type 2SD2384 APPLICATIONS ·Designed for power amplifier applications

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) • High DC Current Gain- : hFE= 5000(Min)@IC= -7A • Complement to Type 2SD2385 APPLICATIONS • Designed for power amplifier applications