Silicon PNP epitaxial planar type Darlington(For power amplification)

Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2254 ■ Features ● Optimum for 60W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

isc Silicon PNP Darlington Power Transistor 2SB1492

DESCRIPTION • High DC Current Gain- : hFE= 5000(Min)@IC= -5A • Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -5A • Complement to Type 2SD2254 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed f

Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 5000(Min)@IC= -5A • Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -5A • Complement to Type 2SD2254 APPLICATIONS • Designed for power amplifier applications. • Optimum for 60W HiFi output applications.