Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PL package ·Complement to type 2SD2222 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplification

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PL package ·Complement to type 2SD2222 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplification

For Power Amplification

Silicon PNP triple diffusion planar type darlington For power amplification Complementary to 2SD2222 ■Features •Optimum for 120 W HiFi output •High forward current transfer ratio hFE •Low collector-emitter saturation voltage VCE(sat)

Driver Applications????

Features • Suitable for sets whose height is restricted. • High DC current gain. • Large current capacity and wide ASO. Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.

Driver Applications????

Driver Applications Features • Suitable for sets whose height is restricted. • High DC current gain. • Large current capacity and wide ASO. Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.

Power Transistor (-80V, -4A)

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

Power Transistor (-80V, -4A)

Power transistor ( -80V, -4A) : 2SB1474, 2SB1342 Power transistor (80V, 4A) : 2SD1933

PNP SILICON EPITAXIAL TRANSISTOR AUDIO FREQUENCY AMPLIFIER

FEATURES ● Super Miniature Package. ● High DC Current IC(DC)=500mA MAX. ● Low VCE(sat): VCE(sat)=-60mV at -100mA

PNP Silicon Epitaxial Transistor

■ Features ● Super Miniature Package ● Low collector-emitter saturation voltage ● High DC Current

SILICON TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR AUDIO FREQUENCY AMPLIFIER

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) • Wide Area of Safe Operation • Complement to Type 2SD2236 APPLICATIONS • Designed for driver and general purpose applications.

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) • Wide Area of Safe Operation • Complement to Type 2SD2236 APPLICATIONS • Designed for driver and general purpose applications.

Silicon PNP Power Transistors

DESCRIPTION • With TO-247 package • Complement to type 2SD2236 • Wide area of safe operation APPLICATIONS • For drvier and general purpose applications

TRANSISTORS

TO-220 class high output power package with Pc 60 to 100W.

TRANSISTORS

TO-220 class high output power package with Pc 60 to 100W.

Silicon PNP Power Transistors

DESCRIPTION • With TO-247 package • Complement to type 2SD2237 • High DC current gain • DARLINGTON APPLICATIONS • For use in power linear and switching applications

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE=2000(Min)@lc=-2A • Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max.) @lc= 5A • Complement to Type 2SD2237 APPLICATIONS • Designed for power linear and switching applications

Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE=2000(Min)@lc=-2A • Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max.) @lc= 5A • Complement to Type 2SD2237 APPLICATIONS • Designed for power linear and switching applications

Silicon PNP Power Transistors

文件：115.61 Kbytes Page：3 Pages

PNP Epitaxial Planar Silicon Transistors Driver Applications

PNP Epitaxial Planar Silicon Transistors Driver Applications

Power transistor ( -80V, -4A)

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：TRANS PNP DARL 80V 4A CPT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP Transistors

文件：1.13903 Mbytes Page：3 Pages

封装/外壳：SC-70，SOT-323 包装：散装 描述：TRANS PNP SMD 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon PNP Power Transistors

文件：120.76 Kbytes Page：3 Pages

Silicon PNP Power Transistors

文件：119.46 Kbytes Page：3 Pages