Silicon PNP epitaxial planer type

Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216 ■ Features • High forward current transfer ratio hFE • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing

For general amplification

Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216J ■ Features • High forward current transfer ratio hFE • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing

For General Amplification

Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216L ■ Features • High forward current transfer ratio hFE • Mold leadless type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing

Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)

Silicon PNP epitaxial planar type For high breakdown voltage low-frequency amplification Complementary to 2SD2240 ■ Features • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through t

PNP SILICON EPITAXIAL TRANSISTOR

The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed switching. This transistor is ideal for use in a direct drive from IC output to relay drivers in switching equipment and pulse motor drivers or relay drivers in such as OA and FA equipment

General High-Current Switching Applications

General High-Current Switching Applications Features • Micaless package facilitating mounting. • Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. • Large current capacity. Applications • Relay drivers, high-speed inverters, converters.

30V/8A High-Speed Switching Applications

Features • Micaless package facilitating mounting. • Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. • Large current capacity. Applications • Relay drivers, high-speed inverters, converters, etc.

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) • Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@ (IC= -5A, IB= -0.25A) • Complement to Type 2SD2219 • Complement to Type 2SD2065 • Minimum Lot-to-Lot variations for robust device performance and reliable opera

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) • Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@ (IC= -5A, IB= -0.25A) • Complement to Type 2SD2219 APPLICATIONS • Designed for high-speed inverters,converters.

TRANSISTORS TO 92L TO-92LS MRT

文件：195.39 Kbytes Page：2 Pages

封装/外壳：SC-89，SOT-490 包装：散装 描述：TRANS PNP 50V 0.1A SSMINI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：SC-89，SOT-490 包装：散装 描述：TRANS PNP 150V 0.05A SSMINI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个