Silicon PNP epitaxial planer type(For low-frequency output amplification)

Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD2185 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine pa

Silicon PNP Epitaxial Planar Type

Features ● Low collector to emitter saturation voltage VCE(sat). ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

PNP Plastic Encapsulated Transistor

FEATURES ● Low collector-emitter saturation voltage VCE(sat) ● For low-frequency output amplification ● Complements to 2SD2185

TRANSISTOR(PNP)

FEATURES ● Low collector-emitter saturation voltage VCE(sat) ● For low-frequency output amplification ● Complementary to 2SD2185

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Low collector-emitter saturation voltage VCE(sat) ● For low-frequency output amplification ● Complementary to 2SD2185

Silicon PNP epitaxial planer type

FEATURES ● Low collector-emitter saturation voltage VCE(sat). ● Mini Power type package,allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. ● Complementary the 2SD2185.

SOT-89 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Low collector-emitter saturation voltage VCE(sat) ● For low-frequency output amplification ● Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H

Plastic-Encapsulate Transistors

FEATURES • Low collector-emitter saturation voltage VCE(sat). • Mini Power type package,allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. • Complementary the 2SD2185.

SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Low collector-emitter saturation voltage VCE(sat) For low-frequency output amplification Complementary to 2SD2185

Power Transistor (-50V, -2A)

Features 1) Low saturation voltage. VCE (sat) = −0.35V (Max.) at IC / IB = −1A / 50mA. 2) Excellent DC current gain characteristics.

Silicon PNP epitaxial planer type(For low-frequency output amplification)

For low-frequency output amplification Complementary to 2SD2179 ■Features ● Low collector to emitter saturation voltage VCE(sat). ● Allowing supply with the radial taping.

Darlington Transistor(-15A PNP)

50V/5A Switching Applications

Features • Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1449/2SD2198-applied equipment. -High density surface mount applications. -Small size of 2SB1449/2SD2198-applied equipment. • Low collector-to-emitter sat

Silicon PNP transistor in a SOT-89 Plastic Package

文件：753.78 Kbytes Page：6 Pages

PNP Plastic Encapsulated Transistor

文件：105.15 Kbytes Page：2 Pages

封装/外壳：TO-243AA 包装：管件 描述：TRANS PNP 50V 2A MINIP3-F2 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Power Transistor (??0V, ??A)

文件：154.25 Kbytes Page：3 Pages

Power Transistor

文件：50.43 Kbytes Page：1 Pages

Power Transistor (??0V, ??A)

文件：154.25 Kbytes Page：3 Pages

封装/外壳：3-SIP 包装：剪切带（CT） 描述：TRANS PNP 50V 2A ATV 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个