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位置：首页 > IC中文资料第2759页 > 2SB136

2SB136晶体管资料

  • 2SB136别名：2SB136三极管、2SB136晶体管、2SB136晶体三极管

  • 2SB136生产厂家：日本三菱公司

  • 2SB136制作材料：Ge-PNP

  • 2SB136性质：低频或音频放大 （LF）

  • 2SB136封装形式：直插封装

  • 2SB136极限工作电压：25V

  • 2SB136最大电流允许值：0.15A

  • 2SB136最大工作频率：<1MHZ或未知

  • 2SB136引脚数：3

  • 2SB136最大耗散功率：0.15W

  • 2SB136放大倍数：

  • 2SB136图片代号：C-47

  • 2SB136vtest：25

  • 2SB136htest：999900

  • 2SB136atest：0.15

  • 2SB136wtest：0.15

  • 2SB136代换 2SB136用什么型号代替：AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N11194,2SB54,2SB56,3AX51A,

型号 功能描述 生产厂家 企业 LOGO 操作
2SB1360

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHM

罗姆

2SB1361

Silicon PNP triple diffusion planar type(For high power amplification)

Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2052 ■ Features ● Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics ● Wide area of safe operation (ASO) ● High transition frequency fT ● Full-pack package which ca

Panasonic

松下

2SB1361

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PFa package • Complement to type 2SD2052 • High transition frequency • Wide area of safe operation APPLICATIONS • For high power amplification

SAVANTIC

2SB1361

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) • Wide Area of Safe Operation • Complement to Type 2SD2052 APPLICATIONS • Designed for high power amplifications.

ISC

无锡固电

2SB1361

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- :V(BR)CEo=-150V(Min) • Wide Area of Safe Operation • Complement to Type 2SD2052 APPLICATIONS • Designed for high power amplifications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SB1362

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PN package ·Wide area of safe operation ·Complement to type 2SD2053 APPLICATIONS ·For high power amplifier applications

SAVANTIC

2SB1362

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PN package ·Wide area of safe operation ·Complement to type 2SD2053 APPLICATIONS ·For high power amplifier applications

ISC

无锡固电

2SB1366

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2058 • Low collector saturation voltage: VCE(SAT)=-1.0V(Max) at IC=-2A,IB=-0.2A • Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS • With general purpose applications

ISC

无锡固电

2SB1366

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2058 • Low collector saturation voltage: VCE(SAT)=-1.0V(Max) at IC=-2A,IB=-0.2A • Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS • With general purpose applications

SAVANTIC

2SB1366

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEo= -60V(Min) • Collector Power Dissipation- : Pc= 25 W@ Tc= 25°C • Low Collector Saturation Voltage- : VCE(sa.f -1.0V(Max)@ (lc= -2A,IB= -0.2A) • Complement to Type 2SD2058 APPLICATIONS • Designed for general purpose applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SB1367

Silicon PNP Power Transistors

Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SD2059 ·Low collector saturation voltage: VCE(sat)=-2.0V(Max) at IC=-4A,IB=-0.4A ·Collector power dissipation: PC=30W(TC=25℃) APPLICATIONS ·With general purpose applications

ISC

无锡固电

2SB1367

Silicon PNP Power Transistors

Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SD2059 ·Low collector saturation voltage: VCE(sat)=-2.0V(Max) at IC=-4A,IB=-0.4A ·Collector power dissipation: PC=30W(TC=25) APPLICATIONS ·With general purpose applications

SAVANTIC

2SB1368

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2060 • Low collector saturation voltage: VCE(SAT)=-1.7V(Max) at IC=-3A,IB=-0.3A • Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS • With general purpose applications

ISC

无锡固电

2SB1368

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2060 • Low collector saturation voltage: VCE(SAT)=-1.7V(Max) at IC=-3A,IB=-0.3A • Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS • With general purpose applications

SAVANTIC

2SB1368

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) • Collector Power Dissipation- : PC= 25W@ Tc= 25°C • Low Collector Saturation Voltage- : VCE(sat)= -1.7V(Max)@ (lc= -3A, IB= -0.3A) • Complement to Type 2SD2060 APPLICATIONS • Designed for general purpose applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SB1369

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·High collector power dissipation ·High current capability APPLICATIONS ·For general purpose applications

SAVANTIC

2SB1369

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHM

罗姆

2SB1369

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·High collector power dissipation ·High current capability APPLICATIONS ·For general purpose applications

ISC

无锡固电

2SB1361

Silicon PNP Power Transistors

文件：124.38 Kbytes Page：3 Pages

SAVANTIC

2SB1362

Silicon PNP Power Transistor

文件：134.12 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SB1362

Silicon PNP Power Transistors

文件：140.4 Kbytes Page：3 Pages

SAVANTIC

2SB1362

For high power amplification

Panasonic

松下

2SB1366

2SC3229

文件：177.97 Kbytes Page：5 Pages

KEC

KEC(Korea Electronics)

2SB1366

Silicon PNP Power Transistors

文件：255.03 Kbytes Page：3 Pages

SAVANTIC

2SB1366

功率三极管

STMICROELECTRONICS

意法半导体

2SB1366F-O

中等功率双极型晶体管

MCC

2SB1366F-O

PNP Silicon Power Transistors

文件：157.07 Kbytes Page：2 Pages

MCC

2SB1366F-O-BP

封装/外壳：TO-220-3 整包 包装：卷带（TR） 描述：TRANS PNP 60V 3A TO220F 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

MCC

2SB1366F-Y

PNP Silicon Power Transistors

文件：157.07 Kbytes Page：2 Pages

MCC

2SB1366F-Y-BP

封装/外壳：TO-220-3 整包 包装：卷带（TR） 描述：TRANS PNP 60V 3A TO220F 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

MCC

2SB1367

Silicon PNP Power Transistors

文件：241.53 Kbytes Page：4 Pages

SAVANTIC

2SB1367

Silicon PNP Power Transistor

文件：127.57 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SB1368

Silicon PNP Power Transistors

文件：244.73 Kbytes Page：4 Pages

SAVANTIC

2SB1369

Silicon PNP Power Transistors

文件：92.47 Kbytes Page：3 Pages

SAVANTIC

2SB1369

Silicon PNP Power Transistor

文件：123.18 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SB136产品属性

  • 类型

    描述

  • 型号

    2SB136

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TRANSISTOR 2-10L1A-60V -3A 25W BCE

2SB136供应商更多...

更新时间：2025-12-25 11:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市勤思达科技有限公司
2SB1370
ROHM
15+
TO-220F
11560
全新原装,现货库存,长期供应
询价
深圳市赛特兴科技有限公司
2SB136A
ST
23+
CAN to-39
16900
正规渠道,只有原装!
询价
深圳市赛美科科技有限公司
2SB1370
KEC
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
询价
深圳市明嘉莱科技有限公司
2SB1370
KEC
25+
NA
880000
明嘉莱只做原装正品现货
询价
艾睿（深圳）半导体有限公司
2SB1370
ROHM/罗姆
2447
TO-22OF
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
深圳市威尔健半导体有限公司
2SB1369-Y
KEC
23+
TO-220F
50000
全新原装正品现货,支持订货
询价
深圳市华斯顿科技有限公司
2SB1370
ROHM
25+23+
DIP
37539
绝对原装正品全新进口深圳现货
询价
富凯科技(深圳）有限公司
2SB1370
CJ/长电
24+
TO-220F
50000
只做原装，欢迎询价，量大价优
询价
深圳市科芯源微电子有限公司
2SB1370
CJ/长电
25+
TO220F
54648
百分百原装现货 实单必成 欢迎询价
询价
深圳市腾亿芯科技有限公司
2SB136A
ST
25+
CAN to-39
16900
原装，请咨询
询价

2SB136芯片相关品牌

2SB136规格书下载地址

2SB136参数引脚图相关

2SB136数据表相关新闻

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    2SA2198，全新原装当天发货或门市自取0755-82732291.

    2020-4-24

  • 2SB1386-P-PNP硅外延晶体管

    2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号

    2012-11-9

DdatasheetPDF页码索引

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