2SB136晶体管资料

  • 2SB136别名:2SB136三极管、2SB136晶体管、2SB136晶体三极管

  • 2SB136生产厂家:日本三菱公司

  • 2SB136制作材料:Ge-PNP

  • 2SB136性质:低频或音频放大 (LF)

  • 2SB136封装形式:直插封装

  • 2SB136极限工作电压:25V

  • 2SB136最大电流允许值:0.15A

  • 2SB136最大工作频率:<1MHZ或未知

  • 2SB136引脚数:3

  • 2SB136最大耗散功率:0.15W

  • 2SB136放大倍数

  • 2SB136图片代号:C-47

  • 2SB136vtest:25

  • 2SB136htest:999900

  • 2SB136atest:0.15

  • 2SB136wtest:0.15

  • 2SB136代换 2SB136用什么型号代替:AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N11194,2SB54,2SB56,3AX51A,

型号 功能描述 生产厂家 企业 LOGO 操作

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHM

罗姆

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) • Wide Area of Safe Operation • Complement to Type 2SD2052 APPLICATIONS • Designed for high power amplifications.

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- :V(BR)CEo=-150V(Min) • Wide Area of Safe Operation • Complement to Type 2SD2052 APPLICATIONS • Designed for high power amplifications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP triple diffusion planar type(For high power amplification)

Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2052 ■ Features ● Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics ● Wide area of safe operation (ASO) ● High transition frequency fT ● Full-pack package which ca

Panasonic

松下

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PFa package • Complement to type 2SD2052 • High transition frequency • Wide area of safe operation APPLICATIONS • For high power amplification

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PN package ·Wide area of safe operation ·Complement to type 2SD2053 APPLICATIONS ·For high power amplifier applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PN package ·Wide area of safe operation ·Complement to type 2SD2053 APPLICATIONS ·For high power amplifier applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2058 • Low collector saturation voltage: VCE(SAT)=-1.0V(Max) at IC=-2A,IB=-0.2A • Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS • With general purpose applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEo= -60V(Min) • Collector Power Dissipation- : Pc= 25 W@ Tc= 25°C • Low Collector Saturation Voltage- : VCE(sa.f -1.0V(Max)@ (lc= -2A,IB= -0.2A) • Complement to Type 2SD2058 APPLICATIONS • Designed for general purpose applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2058 • Low collector saturation voltage: VCE(SAT)=-1.0V(Max) at IC=-2A,IB=-0.2A • Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS • With general purpose applications

SAVANTIC

Silicon PNP Power Transistors

Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SD2059 ·Low collector saturation voltage: VCE(sat)=-2.0V(Max) at IC=-4A,IB=-0.4A ·Collector power dissipation: PC=30W(TC=25) APPLICATIONS ·With general purpose applications

SAVANTIC

Silicon PNP Power Transistors

Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SD2059 ·Low collector saturation voltage: VCE(sat)=-2.0V(Max) at IC=-4A,IB=-0.4A ·Collector power dissipation: PC=30W(TC=25℃) APPLICATIONS ·With general purpose applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) • Collector Power Dissipation- : PC= 25W@ Tc= 25°C • Low Collector Saturation Voltage- : VCE(sat)= -1.7V(Max)@ (lc= -3A, IB= -0.3A) • Complement to Type 2SD2060 APPLICATIONS • Designed for general purpose applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2060 • Low collector saturation voltage: VCE(SAT)=-1.7V(Max) at IC=-3A,IB=-0.3A • Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS • With general purpose applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2060 • Low collector saturation voltage: VCE(SAT)=-1.7V(Max) at IC=-3A,IB=-0.3A • Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS • With general purpose applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·High collector power dissipation ·High current capability APPLICATIONS ·For general purpose applications

SAVANTIC

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHM

罗姆

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·High collector power dissipation ·High current capability APPLICATIONS ·For general purpose applications

ISC

无锡固电

Silicon PNP Power Transistors

文件:124.38 Kbytes Page:3 Pages

SAVANTIC

Silicon PNP Power Transistors

文件:140.4 Kbytes Page:3 Pages

SAVANTIC

For high power amplification

Panasonic

松下

Silicon PNP Power Transistor

文件:134.12 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SC3229

文件:177.97 Kbytes Page:5 Pages

KEC

KEC(Korea Electronics)

功率三极管

STMICROELECTRONICS

意法半导体

Silicon PNP Power Transistors

文件:255.03 Kbytes Page:3 Pages

SAVANTIC

中等功率双极型晶体管

MCC

PNP Silicon Power Transistors

文件:157.07 Kbytes Page:2 Pages

MCC

封装/外壳:TO-220-3 整包 包装:卷带(TR) 描述:TRANS PNP 60V 3A TO220F 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

PNP Silicon Power Transistors

文件:157.07 Kbytes Page:2 Pages

MCC

封装/外壳:TO-220-3 整包 包装:卷带(TR) 描述:TRANS PNP 60V 3A TO220F 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

Silicon PNP Power Transistors

文件:241.53 Kbytes Page:4 Pages

SAVANTIC

Silicon PNP Power Transistor

文件:127.57 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

文件:244.73 Kbytes Page:4 Pages

SAVANTIC

Silicon PNP Power Transistors

文件:92.47 Kbytes Page:3 Pages

SAVANTIC

Silicon PNP Power Transistor

文件:123.18 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SB136产品属性

  • 类型

    描述

  • 型号

    2SB136

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TRANSISTOR 2-10L1A-60V -3A 25W BCE

更新时间:2025-12-25 18:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
KEC
24+
TO-220F
1200
绝对原厂原装,长期优势可定货
KEC
24+
NA/
21946
优势代理渠道,原装正品,可全系列订货开增值税票
RENESAS
24+
SOT89
5100
只做原装正品现货 欢迎来电查询15919825718
RENESAS/瑞萨
22+
SOT-89
20000
只做原装
TOS
20+
TO-220
38560
原装优势主营型号-可开原型号增税票
KEC
25+
NA
880000
明嘉莱只做原装正品现货
HITACHI
23+
NA
636
专做原装正品,假一罚百!
PANASONIC/松下
23+
TO-3P
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
ON
25+23+
SOT23
15539
绝对原装正品全新进口深圳现货
24+
TOP-3FA
10000
全新

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