High-Current Switching Applications

High-Current Switching Applications Features · Suitable for sets whose height is restricted. · Low collector to emitter saturation voltage. · Large current capacity. Applications · Suitable for relay drivers, high-speed inverters, converters, and other general high-current sw

High-Current Switching Applications

High-Current Switching Applications Features · Suitable for sets whose height is restricted. · Low collector to emitter saturation voltage. · Large current capacity. Applications · Suitable for relay drivers, high-speed inverters, converters, and other general high-current sw

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·DARLINGTON ·High DC current gain APPLICATIONS ·For low frequency power amplifier applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·DARLINGTON ·High DC current gain APPLICATIONS ·For low frequency power amplifier applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications

TO-220-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Wide ASO (Adoption of MBIT Process). ● Low Saturation Voltage. ● High Reliability. ● High Breakdown Voltage.

General Purpose Switching and Amplification.

FEATURES • General Purpose Switching and Amplification. • Wide ASO (Adoption of MBIT Process) • Low Saturation Voltage.

Silicon PNP Power Transistor

DESCRIPTION • High Reliability • Low Collector Saturation Voltage :VCE(sat)=-1.0V(Max)@Ic=-2A • Wide Area of Safe Operation APPLICATIONS • Designed for low frequency power amplifier applications.

Silicon PNP transistor in a TO-220F Plastic Package

Descriptions Silicon PNP transistor in a TO-220F Plastic Package. Features High VCEO, low saturation voltage, wide ASO. Applications Low frequency power amplifier applications.

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SD1913 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS ·60V/3A low-frequency power amplifier ·General power amplifier applications

60V/3A Low-Frequency Power Amplifier Applications

60V/3A Low-Frequency Power Amplifier Applications Applications •General power amplifier. Features • Wide ASO (Adoption of MBIT process). • Low saturation voltage. • High reliability. • High breakdown voltage. • Micaless package facilitating mounting.

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SD1913 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS ·60V/3A low-frequency power amplifier ·General power amplifier applications

TO-220-3L Plastic-Encapsulate Transistors

FEATURES Wide ASO (Adoption of MBIT Process). Low Saturation Voltage. High Reliability. High Breakdown Voltage.

isc Silicon PNP Power Transistor

DESCRIPTION ·Low saturation voltage. ·High reliability ·High breakdown voltage APPLICATIONS ·Designed for DC-DC converter, emergency lighting inverter and general purpose applications

Power Transistor (-160V , -1.5A)

Features 1) High breakdown voltage.(BVCEO= -160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A.

POWER TRANSISTOR

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

Medium Power Transistor (32V, 2A)

FTR • FTL Low profile flat-package for limited spece applications. Tape type can be used on automated line. Bulk type is also available.

MEDIUM POWER TRANSISTOR(-32V, -2A)

Medium power Transistor(
32V,
2A)

Features 1) Low VCE(sat). VCE(sat) =
0.5V (Typ.) (IC / IB =
2A /
0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M.

MEDIUM POWER TRANSISTOR(-32V, -2A)

MEDIUM POWER TRANSISTOR(-32V, -2A)

MEDIUM POWER TRANSISTOR(-32V, -2A)

Epitaxial Planar PNP Silicon Translstors

Medium Power Amp. Epitaxial Planar Silicon Transistor Features 1) Compact FTR package delivering high power: Pc=750mW 2) Hihg breakdown voltage: VCEO=-80V

Silicon PNP Power Transistors

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Silicon PNP Power Transistor

文件：133.15 Kbytes Page：2 Pages

2SB1273

文件：104.39 Kbytes Page：3 Pages

Silicon PNP Power Transistors

文件：255.55 Kbytes Page：4 Pages

PNP Plastic Encapsulated Transistor

文件：104.2 Kbytes Page：1 Pages

isc Silicon PNP Power Transistor

文件：272.4 Kbytes Page：2 Pages

PNP -1.5A -160V Middle Power Transistor

文件：471.94 Kbytes Page：7 Pages

Power Transistor (-160V, -1.5A)

文件：175.18 Kbytes Page：4 Pages

Power Transistor

文件：39.19 Kbytes Page：1 Pages

Power Transistor (-160V, -1.5A)

文件：175.18 Kbytes Page：4 Pages

PNP -1.5A -160V Middle Power Transistor

文件：471.94 Kbytes Page：7 Pages

PNP Transistors

文件：1.61554 Mbytes Page：4 Pages

PNP Transistors

文件：1.61554 Mbytes Page：4 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 160V 1.5A CPT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个