Silicon PNP epitaxial planar type darlington

Silicon PNP epitaxial planar type darlington For medium-speed voltage switching Complementary to 2SD1750, 2SD1750A ■ Features • High forward current transfer ratio hFE • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipm

Silicon PNP epitaxial planar type darlington

Silicon PNP epitaxial planar type darlington For medium-speed voltage switching Complementary to 2SD1750, 2SD1750A ■ Features • High forward current transfer ratio hFE • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipm

Power Transistor

Features 1) High breakdown voltage and high current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733.

Power Transistor (??0V, ??A)

Features 1) High breakdown voltage and high current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733.

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·DC Current Gain- : hFE= 120(Min)@ IC=-0.1A APPLICATIONS · Inverters · Motor Controls

Medium power Transistor(
32V,
2A)

Features 1) Low VCE(sat). VCE(sat) =
0.5V (Typ.) (IC / IB =
2A /
0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M.

Medium power transistor (32V, 2A)

Medium power transistor (−32V, −2A) Features 1) Low VCE(sat). VCE(sat) = −0.5V (Typ.) (IC/IB = −2A / −0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 Structure Epitaxial planar type PNP silicon transistor

TO-252-2L(4R) Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Power Dissipation

MEDIUM POWER LOW VOLTAGE TRANSISTOR

DESCRIPTION The UTC 2SB1182 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage

Medium power transistor (32V,2A)

Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862.

Silicon PNP transistor in a TO-252 Plastic Package.

Descriptions Silicon PNP transistor in a TO-252 Plastic Package. Features Low VCE(sat),complements the 2SD1758. Applications Medium power amplifier applications.

Medium power transistor (-32V, -2A)

● Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862. ● Structure Epitaxial planar type PNP silicon transistor

isc Silicon PNP Power Transistor

DESCRIPTION • Small and slim package • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power dissipation

Medium power transistor (32V, 2A)

Medium power transistor (−32V, −2A) Features 1) Low VCE(sat). VCE(sat) = −0.5V (Typ.) (IC/IB = −2A / −0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 Structure Epitaxial planar type PNP silicon transistor

Medium Power Transistor

FEATURES ● Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) ● Complements the 2SD1758 APPLICATIONS ● Epitaxial planar type. ● PNP silicon transistor.

Medium power transistor (-32V, -2A)

● Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC / IB = -2A / -0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. ● Structure Epitaxial planar type PNP silicon transistor

Medium power Transistor(-32V, -2A)

● Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC / IB = -2A / -0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. ● Structure Epitaxial planar type PNP silicon transistor

MEDIUM POWER TRANSISTOR(-32V, -2A)

Medium Power Transistor (32V, 2A)

FTR • FTL Low profile flat-package for limited spece applications. Tape type can be used on automated line. Bulk type is also available.

Medium Power Transistor

■ Features ● Low VCE(sat).VCE(sat) = -0.5V ● Complementary to 2SD1758

PNP PLASTIC ENCAPSULATE TRANSISTORS

PNP PLASTIC ENCAPSULATE TRANSISTORS Pb Lead(Pb)-Free

PNP Silicon General Purpose Transistor

FEATURES The 2SB1182DX is designed for medium power amplifier application Low collector saturation voltage: VCE(sat)=-0.5V (Typ.) RoHS Compliant Product

MEDIUM POWER LOW VOLTAGE TRANSISTOR

DESCRIPTION The UTC 2SB1182 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage

MEDIUM POWER LOW VOLTAGE TRANSISTOR

DESCRIPTION The UTC 2SB1182 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage

MEDIUM POWER LOW VOLTAGE TRANSISTOR

DESCRIPTION The UTC 2SB1182 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage

MEDIUM POWER LOW VOLTAGE TRANSISTOR

DESCRIPTION The UTC 2SB1182 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage

MEDIUM POWER TRANSISTOR(-32V, -2A)

PNP Silicon Epitaxial Transistors

Features ● Low Collector Saturation Voltage ● Execllent current-to-gain characteristics ● Epoxy meets UL 94 V-0 flammability rating ● Moisture Sensitivity Level 1

PNP Epitaxial Transistor

FEATURE * Small flat package. (DPAK) * PC= 1.5 W (mounted on ceramic substrate). * High saturation current capability. APPLICATION * Power driver and Dc to DC convertor .

MEDIUM POWER TRANSISTOR(-32V, -2A)

PNP Silicon Epitaxial Transistors

Features ● Low Collector Saturation Voltage ● Execllent current-to-gain characteristics ● Epoxy meets UL 94 V-0 flammability rating ● Moisture Sensitivity Level 1

MEDIUM POWER TRANSISTOR(-32V, -2A)

PNP Silicon Epitaxial Transistors

Features ● Low Collector Saturation Voltage ● Execllent current-to-gain characteristics ● Epoxy meets UL 94 V-0 flammability rating ● Moisture Sensitivity Level 1

Medium power transistor (32V,2A)

Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862.

Darlington connection for high DC current gain.

Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1759 / 2SD1861.

Power transistor

Features ● Low VCE(sat). ● PNP silicon transistor. ● Epitaxial planar type

isc Silicon PNP Power Transistor

DESCRIPTION • Low VCE(sat) • Small and slim package • Complements the 2SD1760/2SD1864 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power dissipation

PNP Plastic Encapsulated Transistor

FEATURES ● Designed for general ● Low VCE(sat)

PNP PLASTIC ENCAPSULATE TRANSISTORS

Features: * Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A)

Power Transistor (-60V, -3A)

● Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC / IB = -2A / -0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. ● Structure Epitaxial planar type PNP silicon transistor

Epitaxial Planar PNP Silicon Transistors

Low collector saturation voltage: Voeea=-0.5V (Typj (lc/lB 一 一 2A/ 一 0.2AJ Complementary pair with 2SD1760F5.

PNP Plastic Encapsulated Transistor

FEATURES ● Designed for general ● Low VCE(sat)

PNP Silicon Epitaxial Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Low Collector Saturation Voltage • Execllent curre

PNP Silicon Epitaxial Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Low Collector Saturation Voltage • Execllent curre

PNP Plastic Encapsulated Transistor

FEATURES ● Designed for general ● Low VCE(sat)

PNP Silicon Epitaxial Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Low Collector Saturation Voltage • Execllent curre

PNP Plastic Encapsulated Transistor

FEATURES ● Designed for general ● Low VCE(sat)

Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A), Complements the 2SD1760 / 2SD1864.

Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 2) Complements the 2SD1760 / 2SD1864. Structure Epitaxial planar type PNP silicon transistor

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Low collector saturation votlage • Complement to type 2SD1762 APPLICATIONS • For use in low frequency power amplifer applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Low collector saturation votlage • Complement to type 2SD1762 APPLICATIONS • For use in low frequency power amplifer applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Low collector saturation votlage • Complement to type 2SD1762 APPLICATIONS • For use in low frequency power amplifer applications

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

Power Transistor (-60V, -3A)

● Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC / IB = -2A / -0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. ● Structure Epitaxial planar type PNP silicon transistor

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TO-220-3L Plastic-Encapsulate Transistors

FEATURES Low Collector Saturation Voltage Complement to Type 2SD1762 APPLICATIONS For Use in Low Frequency Power Amplifier Applications

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TO-220-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Low Collector Saturation Voltage ● Complement to Type 2SD1762 APPLICATIONS ● For Use in Low Frequency Power Amplifier Applications

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

Silicon PNP Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) • Good Linearity of hFE • Complement to Type 2SD1763 APPLICATIONS • Power amplifier applications. • Driver stage amplifier applications.

Power Transistor

Power Transistor (-120V, -1.5A) 2SB1236 / 2SB1186 Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763