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2SB118晶体管资料
2SB118别名:2SB118三极管、2SB118晶体管、2SB118晶体三极管
2SB118生产厂家:日本松下公司
2SB118制作材料:Ge-PNP
2SB118性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
2SB118封装形式:直插封装
2SB118极限工作电压:15V
2SB118最大电流允许值:1.5A
2SB118最大工作频率:<1MHZ或未知
2SB118引脚数:2
2SB118最大耗散功率:50W
2SB118放大倍数:
2SB118图片代号:E-44
2SB118vtest:15
2SB118htest:999900
- 2SB118atest:1.5
2SB118wtest:50
2SB118代换 2SB118用什么型号代替:AD149,AD166,2N2137,2N2142,2SB449,3AD56A,
2SB118价格
参考价格:¥2.0083
型号:2SB1181TLQ 品牌:Rohm 备注:这里有2SB118多少钱,2024年最近7天走势,今日出价,今日竞价,2SB118批发/采购报价,2SB118行情走势销售排行榜,2SB118报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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SiliconPNPepitaxialplanartypedarlington SiliconPNPepitaxialplanartypedarlington Formedium-speedvoltageswitching Complementaryto2SD1750,2SD1750A ■Features •HighforwardcurrenttransferratiohFE •Itypepackageenablingdirectsolderingoftheradiatingfintotheprintedcircuitboard,etc.ofsmallelectronicequipm | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconPNPepitaxialplanartypedarlington SiliconPNPepitaxialplanartypedarlington Formedium-speedvoltageswitching Complementaryto2SD1750,2SD1750A ■Features •HighforwardcurrenttransferratiohFE •Itypepackageenablingdirectsolderingoftheradiatingfintotheprintedcircuitboard,etc.ofsmallelectronicequipm | PanasonicPanasonic Corporation 松下松下电器 | |||
PowerTransistor Features 1)Highbreakdownvoltageandhighcurrent.BVCEO=−80V,IC=−1A 2)GoodhFElinearity. 3)LowVCE(sat). 4)Complementsthe2SD1898/2SD1863/2SD1733. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PowerTransistor(??0V,??A) Features 1)Highbreakdownvoltageandhighcurrent.BVCEO=−80V,IC=−1A 2)GoodhFElinearity. 3)LowVCE(sat). 4)Complementsthe2SD1898/2SD1863/2SD1733. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MEDIUMPOWERLOWVOLTAGETRANSISTOR DESCRIPTION TheUTC2SB1182isamediumpowerlowvoltagetransistor,designedforaudiopoweramplifier,DC-DCconverterandvoltageregulator. FEATURES *Highcurrentoutputupto3A *Lowsaturationvoltage | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
Mediumpowertransistor(32V,2A) Features 1)LowVCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A) 2)Complements2SD1758/2SD1862. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Mediumpowertransistor(32V,2A) Mediumpowertransistor(−32V,−2A) Features 1)LowVCE(sat). VCE(sat)=−0.5V(Typ.) (IC/IB=−2A/−0.2A) 2)Complementsthe2SD1766/2SD1758/2SD1862 Structure Epitaxialplanartype PNPsilicontransistor | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
SiliconPNPtransistorinaTO-252PlasticPackage. Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features LowVCE(sat),complementsthe2SD1758. Applications Mediumpoweramplifierapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
Mediumpowertransistor(-32V,-2A) ●Features 1)LowVCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A) 2)Complementsthe2SD1766/2SD1758/2SD1862. ●Structure Epitaxialplanartype PNPsilicontransistor | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
iscSiliconPNPPowerTransistor DESCRIPTION •Smallandslimpackage •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Powerdissipation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Mediumpowertransistor(32V,2A) Mediumpowertransistor(−32V,−2A) Features 1)LowVCE(sat). VCE(sat)=−0.5V(Typ.) (IC/IB=−2A/−0.2A) 2)Complementsthe2SD1766/2SD1758/2SD1862 Structure Epitaxialplanartype PNPsilicontransistor | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MediumPowerTransistor FEATURES ●LowVCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) ●Complementsthe2SD1758 APPLICATIONS ●Epitaxialplanartype. ●PNPsilicontransistor. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | |||
TO-252-2L(4R)Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES PowerDissipation | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
MediumpowerTransistor(32V,2A) Features 1)LowVCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A) 2)Complementsthe2SD1766/ 2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/SD1227M. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Mediumpowertransistor(-32V,-2A) ●Features 1)LowVCE(sat). VCE(sat)=-0.5V(Typ.) (IC/IB=-2A/-0.2A) 2)Complementsthe2SD1766/ 2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/SD1227M. ●Structure Epitaxialplanartype PNPsilicontransistor | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MediumpowerTransistor(-32V,-2A) ●Features 1)LowVCE(sat). VCE(sat)=-0.5V(Typ.) (IC/IB=-2A/-0.2A) 2)Complementsthe2SD1766/ 2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/SD1227M. ●Structure Epitaxialplanartype PNPsilicontransistor | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MEDIUMPOWERTRANSISTOR(-32V,-2A)
| ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MediumPowerTransistor(32V,2A) FTR•FTL Lowprofileflat-packageforlimitedspeceapplications. Tapetypecanbeusedonautomatedline.Bulktypeisalsoavailable. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
MediumPowerTransistor ■Features ●LowVCE(sat).VCE(sat)=-0.5V ●Complementaryto2SD1758 | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
PNPPLASTICENCAPSULATETRANSISTORS PNPPLASTICENCAPSULATETRANSISTORS PbLead(Pb)-Free | WEITRONWEITRON 威堂電子科技 | |||
PNPSiliconGeneralPurposeTransistor FEATURES The2SB1182DXisdesignedformediumpoweramplifierapplication Lowcollectorsaturationvoltage:VCE(sat)=-0.5V(Typ.) RoHSCompliantProduct | SECOS SeCoS Halbleitertechnologie GmbH | |||
MEDIUMPOWERLOWVOLTAGETRANSISTOR DESCRIPTION TheUTC2SB1182isamediumpowerlowvoltagetransistor,designedforaudiopoweramplifier,DC-DCconverterandvoltageregulator. FEATURES *Highcurrentoutputupto3A *Lowsaturationvoltage | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
MEDIUMPOWERLOWVOLTAGETRANSISTOR DESCRIPTION TheUTC2SB1182isamediumpowerlowvoltagetransistor,designedforaudiopoweramplifier,DC-DCconverterandvoltageregulator. FEATURES *Highcurrentoutputupto3A *Lowsaturationvoltage | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
MEDIUMPOWERLOWVOLTAGETRANSISTOR DESCRIPTION TheUTC2SB1182isamediumpowerlowvoltagetransistor,designedforaudiopoweramplifier,DC-DCconverterandvoltageregulator. FEATURES *Highcurrentoutputupto3A *Lowsaturationvoltage | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
MEDIUMPOWERLOWVOLTAGETRANSISTOR DESCRIPTION TheUTC2SB1182isamediumpowerlowvoltagetransistor,designedforaudiopoweramplifier,DC-DCconverterandvoltageregulator. FEATURES *Highcurrentoutputupto3A *Lowsaturationvoltage | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
MEDIUMPOWERTRANSISTOR(-32V,-2A)
| ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PNPSiliconEpitaxialTransistors Features ●LowCollectorSaturationVoltage ●Execllentcurrent-to-gaincharacteristics ●EpoxymeetsUL94V-0flammabilityrating ●MoistureSensitivityLevel1 | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
PNPEpitaxialTransistor FEATURE *Smallflatpackage.(DPAK) *PC=1.5W(mountedonceramicsubstrate). *Highsaturationcurrentcapability. APPLICATION *PowerdriverandDctoDCconvertor. | CHENMKOCHENMKO CHENMKO | |||
MEDIUMPOWERTRANSISTOR(-32V,-2A)
| ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PNPSiliconEpitaxialTransistors Features ●LowCollectorSaturationVoltage ●Execllentcurrent-to-gaincharacteristics ●EpoxymeetsUL94V-0flammabilityrating ●MoistureSensitivityLevel1 | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
MEDIUMPOWERTRANSISTOR(-32V,-2A)
| ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PNPSiliconEpitaxialTransistors Features ●LowCollectorSaturationVoltage ●Execllentcurrent-to-gaincharacteristics ●EpoxymeetsUL94V-0flammabilityrating ●MoistureSensitivityLevel1 | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
Mediumpowertransistor(32V,2A) Features 1)LowVCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A) 2)Complements2SD1758/2SD1862. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
DarlingtonconnectionforhighDCcurrentgain. Features 1)DarlingtonconnectionforhighDCcurrentgain. 2)Built-in4kΩresistorbetweenbaseandemitter. 3)Complementsthe2SD1759/2SD1861. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PNPPLASTICENCAPSULATETRANSISTORS Features: *LowVCE(sat).VCE(sat)=-0.5V(Typ.)(IC/IB=-2A/-0.2A) | WEITRONWEITRON 威堂電子科技 | |||
Powertransistor Features ●LowVCE(sat). ●PNPsilicontransistor. ●Epitaxialplanartype | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
iscSiliconPNPPowerTransistor DESCRIPTION •LowVCE(sat) •Smallandslimpackage •Complementsthe2SD1760/2SD1864 •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Powerdissipation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PNPPlasticEncapsulatedTransistor FEATURES ●Designedforgeneral ●LowVCE(sat) | SECOS SeCoS Halbleitertechnologie GmbH | |||
PowerTransistor(-60V,-3A) ●Features 1)LowVCE(sat). VCE(sat)=-0.5V(Typ.) (IC/IB=-2A/-0.2A) 2)Complementsthe2SD1760/2SD1864/2SD1762. ●Structure Epitaxialplanartype PNPsilicontransistor | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
EpitaxialPlanarPNPSiliconTransistors Lowcollectorsaturationvoltage: Voeea=-0.5V(Typj (lc/lB一一2A/一0.2AJ Complementarypairwith2SD1760F5. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PNPPlasticEncapsulatedTransistor FEATURES ●Designedforgeneral ●LowVCE(sat) | SECOS SeCoS Halbleitertechnologie GmbH | |||
PNPSiliconEpitaxialTransistors Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LowCollectorSaturationVoltage •Execllentcurre | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
PNPSiliconEpitaxialTransistors Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LowCollectorSaturationVoltage •Execllentcurre | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
PNPPlasticEncapsulatedTransistor FEATURES ●Designedforgeneral ●LowVCE(sat) | SECOS SeCoS Halbleitertechnologie GmbH | |||
PNPPlasticEncapsulatedTransistor FEATURES ●Designedforgeneral ●LowVCE(sat) | SECOS SeCoS Halbleitertechnologie GmbH | |||
PNPSiliconEpitaxialTransistors Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LowCollectorSaturationVoltage •Execllentcurre | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
LowVCE(sat).VCE(sat)=-0.5V(Typ.)(IC/IB=-2A/-0.2A),Complementsthe2SD1760/2SD1864. Features 1)LowVCE(sat). VCE(sat)=-0.5V(Typ.) (IC/IB=-2A/-0.2A) 2)Complementsthe2SD1760/2SD1864. Structure Epitaxialplanartype PNPsilicontransistor | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Fapackage •Lowcollectorsaturationvotlage •Complementtotype2SD1762 APPLICATIONS •Foruseinlowfrequencypowerampliferapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Fapackage •Lowcollectorsaturationvotlage •Complementtotype2SD1762 APPLICATIONS •Foruseinlowfrequencypowerampliferapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Fapackage •Lowcollectorsaturationvotlage •Complementtotype2SD1762 APPLICATIONS •Foruseinlowfrequencypowerampliferapplications | SAVANTIC Savantic, Inc. | |||
TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PowerTransistor(-60V,-3A) ●Features 1)LowVCE(sat). VCE(sat)=-0.5V(Typ.) (IC/IB=-2A/-0.2A) 2)Complementsthe2SD1760/2SD1864/2SD1762. ●Structure Epitaxialplanartype PNPsilicontransistor | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Plastic-EncapsulatedTransistors TRANSISTOR(PNP) FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:-3A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | |||
TO-220-3LPlastic-EncapsulateTransistors FEATURES LowCollectorSaturationVoltage ComplementtoType2SD1762 APPLICATIONS ForUseinLowFrequencyPowerAmplifierApplications | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
TRANSISTOR(PNP) FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:-3A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | |||
TO-220-3LPlastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●LowCollectorSaturationVoltage ●ComplementtoType2SD1762 APPLICATIONS ●ForUseinLowFrequencyPowerAmplifierApplications | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
SiliconPNPPowerTransistor DESCRIPTION •HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=-120V(Min.) •GoodLinearityofhFE •ComplementtoType2SD1763 APPLICATIONS •Poweramplifierapplications. •Driverstageamplifierapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
PowerTransistor PowerTransistor(-120V,-1.5A)2SB1236/2SB1186 PowerTransistor(120V,1.5A)2SC4132/2SD1857/2SD2343/2SD1763 | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Fapackage ·Lowcollectorsaturationvotlage ·Complementtotype2SD1763 ·Highbreakdownvoltage APPLICATIONS ·Foruseinlowfrequencypowerampliferapplications | SAVANTIC Savantic, Inc. |
2SB118产品属性
- 类型
描述
- 型号
2SB118
- 制造商
PANASONIC
- 制造商全称
Panasonic Semiconductor
- 功能描述
Silicon PNP epitaxial planar type darlington
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ROHM/罗姆 |
21+ |
SOT89 |
8080 |
只做原装,质量保证 |
|||
Gonico/共奕 |
1年内 |
SOT-89 |
50000 |
原装现货 共奕芯城原厂直供 自助下单 www.gonisc.com |
|||
CJ/长电 |
21+ |
SOT89 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
ROHM |
2016+ |
SOT89 |
2500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ROHM |
2008++ |
SOT-89 |
31200 |
新进库存/原装 |
|||
ROHM |
23+ |
SOT-89 |
1520 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
ROHM/罗姆 |
2022+ |
SOT89 |
7000 |
公司现货直销 可含税一对一开票 |
|||
ROHM/罗姆 |
SOT89 |
7906200 |
|||||
ROHM |
22+ |
SOT89-3 |
2650 |
原装优势!绝对公司现货 |
|||
GALAXY银河微 |
23+ |
SOT89 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
2SB118规格书下载地址
2SB118参数引脚图相关
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2SB118数据表相关新闻
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2020-4-242SB1386-P-PNP硅外延晶体管
2SB1386-P:PNP硅外延晶体管的特点如下:·低集电极饱和电压·Execllent电流增益特性·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息)·环氧符合UL94V-0阻燃等级·Moisure敏感度等级12SB1386-P/2SB1386-Q/2SB1386-R是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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