2SB118晶体管资料

  • 2SB118别名:2SB118三极管、2SB118晶体管、2SB118晶体三极管

  • 2SB118生产厂家:日本松下公司

  • 2SB118制作材料:Ge-PNP

  • 2SB118性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2SB118封装形式:直插封装

  • 2SB118极限工作电压:15V

  • 2SB118最大电流允许值:1.5A

  • 2SB118最大工作频率:<1MHZ或未知

  • 2SB118引脚数:2

  • 2SB118最大耗散功率:50W

  • 2SB118放大倍数

  • 2SB118图片代号:E-44

  • 2SB118vtest:15

  • 2SB118htest:999900

  • 2SB118atest:1.5

  • 2SB118wtest:50

  • 2SB118代换 2SB118用什么型号代替:AD149,AD166,2N2137,2N2142,2SB449,3AD56A,

2SB118价格

参考价格:¥2.0083

型号:2SB1181TLQ 品牌:Rohm 备注:这里有2SB118多少钱,2024年最近7天走势,今日出价,今日竞价,2SB118批发/采购报价,2SB118行情走势销售排行榜,2SB118报价。
型号 功能描述 生产厂家&企业 LOGO 操作

SiliconPNPepitaxialplanartypedarlington

SiliconPNPepitaxialplanartypedarlington Formedium-speedvoltageswitching Complementaryto2SD1750,2SD1750A ■Features •HighforwardcurrenttransferratiohFE •Itypepackageenablingdirectsolderingoftheradiatingfintotheprintedcircuitboard,etc.ofsmallelectronicequipm

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconPNPepitaxialplanartypedarlington

SiliconPNPepitaxialplanartypedarlington Formedium-speedvoltageswitching Complementaryto2SD1750,2SD1750A ■Features •HighforwardcurrenttransferratiohFE •Itypepackageenablingdirectsolderingoftheradiatingfintotheprintedcircuitboard,etc.ofsmallelectronicequipm

PanasonicPanasonic Corporation

松下松下电器

Panasonic

PowerTransistor

Features 1)Highbreakdownvoltageandhighcurrent.BVCEO=−80V,IC=−1A 2)GoodhFElinearity. 3)LowVCE(sat). 4)Complementsthe2SD1898/2SD1863/2SD1733.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

PowerTransistor(??0V,??A)

Features 1)Highbreakdownvoltageandhighcurrent.BVCEO=−80V,IC=−1A 2)GoodhFElinearity. 3)LowVCE(sat). 4)Complementsthe2SD1898/2SD1863/2SD1733.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

MEDIUMPOWERLOWVOLTAGETRANSISTOR

DESCRIPTION TheUTC2SB1182isamediumpowerlowvoltagetransistor,designedforaudiopoweramplifier,DC-DCconverterandvoltageregulator. FEATURES *Highcurrentoutputupto3A *Lowsaturationvoltage

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

Mediumpowertransistor(32V,2A)

Features 1)LowVCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A) 2)Complements2SD1758/2SD1862.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Mediumpowertransistor(32V,2A)

Mediumpowertransistor(−32V,−2A) Features 1)LowVCE(sat). VCE(sat)=−0.5V(Typ.) (IC/IB=−2A/−0.2A) 2)Complementsthe2SD1766/2SD1758/2SD1862 Structure Epitaxialplanartype PNPsilicontransistor

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

SiliconPNPtransistorinaTO-252PlasticPackage.

Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features LowVCE(sat),complementsthe2SD1758. Applications Mediumpoweramplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

Mediumpowertransistor(-32V,-2A)

●Features 1)LowVCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A) 2)Complementsthe2SD1766/2SD1758/2SD1862. ●Structure Epitaxialplanartype PNPsilicontransistor

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

iscSiliconPNPPowerTransistor

DESCRIPTION •Smallandslimpackage •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Powerdissipation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

Mediumpowertransistor(32V,2A)

Mediumpowertransistor(−32V,−2A) Features 1)LowVCE(sat). VCE(sat)=−0.5V(Typ.) (IC/IB=−2A/−0.2A) 2)Complementsthe2SD1766/2SD1758/2SD1862 Structure Epitaxialplanartype PNPsilicontransistor

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

MediumPowerTransistor

FEATURES ●LowVCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) ●Complementsthe2SD1758 APPLICATIONS ●Epitaxialplanartype. ●PNPsilicontransistor.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

TO-252-2L(4R)Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES PowerDissipation

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

MediumpowerTransistor(32V,2A)

Features 1)LowVCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A) 2)Complementsthe2SD1766/ 2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/SD1227M.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Mediumpowertransistor(-32V,-2A)

●Features 1)LowVCE(sat). VCE(sat)=-0.5V(Typ.) (IC/IB=-2A/-0.2A) 2)Complementsthe2SD1766/ 2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/SD1227M. ●Structure Epitaxialplanartype PNPsilicontransistor

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

MediumpowerTransistor(-32V,-2A)

●Features 1)LowVCE(sat). VCE(sat)=-0.5V(Typ.) (IC/IB=-2A/-0.2A) 2)Complementsthe2SD1766/ 2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/SD1227M. ●Structure Epitaxialplanartype PNPsilicontransistor

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

MEDIUMPOWERTRANSISTOR(-32V,-2A)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

MediumPowerTransistor(32V,2A)

FTR•FTL Lowprofileflat-packageforlimitedspeceapplications. Tapetypecanbeusedonautomatedline.Bulktypeisalsoavailable.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

MediumPowerTransistor

■Features ●LowVCE(sat).VCE(sat)=-0.5V ●Complementaryto2SD1758

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

PNPPLASTICENCAPSULATETRANSISTORS

PNPPLASTICENCAPSULATETRANSISTORS PbLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON

PNPSiliconGeneralPurposeTransistor

FEATURES The2SB1182DXisdesignedformediumpoweramplifierapplication Lowcollectorsaturationvoltage:VCE(sat)=-0.5V(Typ.) RoHSCompliantProduct

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

MEDIUMPOWERLOWVOLTAGETRANSISTOR

DESCRIPTION TheUTC2SB1182isamediumpowerlowvoltagetransistor,designedforaudiopoweramplifier,DC-DCconverterandvoltageregulator. FEATURES *Highcurrentoutputupto3A *Lowsaturationvoltage

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

MEDIUMPOWERLOWVOLTAGETRANSISTOR

DESCRIPTION TheUTC2SB1182isamediumpowerlowvoltagetransistor,designedforaudiopoweramplifier,DC-DCconverterandvoltageregulator. FEATURES *Highcurrentoutputupto3A *Lowsaturationvoltage

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

MEDIUMPOWERLOWVOLTAGETRANSISTOR

DESCRIPTION TheUTC2SB1182isamediumpowerlowvoltagetransistor,designedforaudiopoweramplifier,DC-DCconverterandvoltageregulator. FEATURES *Highcurrentoutputupto3A *Lowsaturationvoltage

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

MEDIUMPOWERLOWVOLTAGETRANSISTOR

DESCRIPTION TheUTC2SB1182isamediumpowerlowvoltagetransistor,designedforaudiopoweramplifier,DC-DCconverterandvoltageregulator. FEATURES *Highcurrentoutputupto3A *Lowsaturationvoltage

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

MEDIUMPOWERTRANSISTOR(-32V,-2A)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

PNPSiliconEpitaxialTransistors

Features ●LowCollectorSaturationVoltage ●Execllentcurrent-to-gaincharacteristics ●EpoxymeetsUL94V-0flammabilityrating ●MoistureSensitivityLevel1

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

PNPEpitaxialTransistor

FEATURE *Smallflatpackage.(DPAK) *PC=1.5W(mountedonceramicsubstrate). *Highsaturationcurrentcapability. APPLICATION *PowerdriverandDctoDCconvertor.

CHENMKOCHENMKO

CHENMKO

CHENMKO

MEDIUMPOWERTRANSISTOR(-32V,-2A)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

PNPSiliconEpitaxialTransistors

Features ●LowCollectorSaturationVoltage ●Execllentcurrent-to-gaincharacteristics ●EpoxymeetsUL94V-0flammabilityrating ●MoistureSensitivityLevel1

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

MEDIUMPOWERTRANSISTOR(-32V,-2A)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

PNPSiliconEpitaxialTransistors

Features ●LowCollectorSaturationVoltage ●Execllentcurrent-to-gaincharacteristics ●EpoxymeetsUL94V-0flammabilityrating ●MoistureSensitivityLevel1

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

Mediumpowertransistor(32V,2A)

Features 1)LowVCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A) 2)Complements2SD1758/2SD1862.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

DarlingtonconnectionforhighDCcurrentgain.

Features 1)DarlingtonconnectionforhighDCcurrentgain. 2)Built-in4kΩresistorbetweenbaseandemitter. 3)Complementsthe2SD1759/2SD1861.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

PNPPLASTICENCAPSULATETRANSISTORS

Features: *LowVCE(sat).VCE(sat)=-0.5V(Typ.)(IC/IB=-2A/-0.2A)

WEITRONWEITRON

威堂電子科技

WEITRON

Powertransistor

Features ●LowVCE(sat). ●PNPsilicontransistor. ●Epitaxialplanartype

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

iscSiliconPNPPowerTransistor

DESCRIPTION •LowVCE(sat) •Smallandslimpackage •Complementsthe2SD1760/2SD1864 •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Powerdissipation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PNPPlasticEncapsulatedTransistor

FEATURES ●Designedforgeneral ●LowVCE(sat)

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

PowerTransistor(-60V,-3A)

●Features 1)LowVCE(sat). VCE(sat)=-0.5V(Typ.) (IC/IB=-2A/-0.2A) 2)Complementsthe2SD1760/2SD1864/2SD1762. ●Structure Epitaxialplanartype PNPsilicontransistor

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

EpitaxialPlanarPNPSiliconTransistors

Lowcollectorsaturationvoltage: Voeea=-0.5V(Typj (lc/lB一一2A/一0.2AJ Complementarypairwith2SD1760F5.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

PNPPlasticEncapsulatedTransistor

FEATURES ●Designedforgeneral ●LowVCE(sat)

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

PNPSiliconEpitaxialTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LowCollectorSaturationVoltage •Execllentcurre

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

PNPSiliconEpitaxialTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LowCollectorSaturationVoltage •Execllentcurre

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

PNPPlasticEncapsulatedTransistor

FEATURES ●Designedforgeneral ●LowVCE(sat)

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

PNPPlasticEncapsulatedTransistor

FEATURES ●Designedforgeneral ●LowVCE(sat)

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

PNPSiliconEpitaxialTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LowCollectorSaturationVoltage •Execllentcurre

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

LowVCE(sat).VCE(sat)=-0.5V(Typ.)(IC/IB=-2A/-0.2A),Complementsthe2SD1760/2SD1864.

Features 1)LowVCE(sat). VCE(sat)=-0.5V(Typ.) (IC/IB=-2A/-0.2A) 2)Complementsthe2SD1760/2SD1864. Structure Epitaxialplanartype PNPsilicontransistor

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220Fapackage •Lowcollectorsaturationvotlage •Complementtotype2SD1762 APPLICATIONS •Foruseinlowfrequencypowerampliferapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220Fapackage •Lowcollectorsaturationvotlage •Complementtotype2SD1762 APPLICATIONS •Foruseinlowfrequencypowerampliferapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220Fapackage •Lowcollectorsaturationvotlage •Complementtotype2SD1762 APPLICATIONS •Foruseinlowfrequencypowerampliferapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE

EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

PowerTransistor(-60V,-3A)

●Features 1)LowVCE(sat). VCE(sat)=-0.5V(Typ.) (IC/IB=-2A/-0.2A) 2)Complementsthe2SD1760/2SD1864/2SD1762. ●Structure Epitaxialplanartype PNPsilicontransistor

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Plastic-EncapsulatedTransistors

TRANSISTOR(PNP) FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:-3A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL

TO-220-3LPlastic-EncapsulateTransistors

FEATURES LowCollectorSaturationVoltage ComplementtoType2SD1762 APPLICATIONS ForUseinLowFrequencyPowerAmplifierApplications

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

TRANSISTOR(PNP)

FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:-3A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN

TO-220-3LPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●LowCollectorSaturationVoltage ●ComplementtoType2SD1762 APPLICATIONS ●ForUseinLowFrequencyPowerAmplifierApplications

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE

EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE)

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

SiliconPNPPowerTransistor

DESCRIPTION •HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=-120V(Min.) •GoodLinearityofhFE •ComplementtoType2SD1763 APPLICATIONS •Poweramplifierapplications. •Driverstageamplifierapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

PowerTransistor

PowerTransistor(-120V,-1.5A)2SB1236/2SB1186 PowerTransistor(120V,1.5A)2SC4132/2SD1857/2SD2343/2SD1763

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-220Fapackage ·Lowcollectorsaturationvotlage ·Complementtotype2SD1763 ·Highbreakdownvoltage APPLICATIONS ·Foruseinlowfrequencypowerampliferapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

2SB118产品属性

  • 类型

    描述

  • 型号

    2SB118

  • 制造商

    PANASONIC

  • 制造商全称

    Panasonic Semiconductor

  • 功能描述

    Silicon PNP epitaxial planar type darlington

更新时间:2024-3-28 16:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM/罗姆
21+
SOT89
8080
只做原装,质量保证
Gonico/共奕
1年内
SOT-89
50000
原装现货 共奕芯城原厂直供 自助下单 www.gonisc.com
CJ/长电
21+
SOT89
9800
只做原装正品假一赔十!正规渠道订货!
ROHM
2016+
SOT89
2500
只做原装,假一罚十,公司可开17%增值税发票!
ROHM
2008++
SOT-89
31200
新进库存/原装
ROHM
23+
SOT-89
1520
绝对全新原装!优势供货渠道!特价!请放心订购!
ROHM/罗姆
2022+
SOT89
7000
公司现货直销 可含税一对一开票
ROHM/罗姆
SOT89
7906200
ROHM
22+
SOT89-3
2650
原装优势!绝对公司现货
GALAXY银河微
23+
SOT89
32078
10年以上分销商,原装进口件,服务型企业

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  • ANAREN
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  • WALSIN
  • WURTH

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