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2SB1182晶体管资料
2SB1182别名:2SB1182三极管、2SB1182晶体管、2SB1182晶体三极管
2SB1182生产厂家:TOY
2SB1182制作材料:Si-PNP
2SB1182性质:低频或音频放大 (LF)_功率放大 (L)
2SB1182封装形式:
2SB1182极限工作电压:40V
2SB1182最大电流允许值:2A
2SB1182最大工作频率:<1MHZ或未知
2SB1182引脚数:
2SB1182最大耗散功率:10W
2SB1182放大倍数:
2SB1182图片代号:NO
2SB1182vtest:40
2SB1182htest:999900
- 2SB1182atest:2
2SB1182wtest:10
2SB1182代换 2SB1182用什么型号代替:2SB837,2SB928,2SB1274,
2SB1182价格
参考价格:¥1.3467
型号:2SB1182TLQ 品牌:Rohm 备注:这里有2SB1182多少钱,2025年最近7天走势,今日出价,今日竞价,2SB1182批发/采购报价,2SB1182行情走势销售排行榜,2SB1182报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SB1182 | Medium power Transistor(-32V, -2A) ● Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC / IB = -2A / -0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. ● Structure Epitaxial planar type PNP silicon transistor | ROHM 罗姆 | ||
2SB1182 | MEDIUM POWER TRANSISTOR(-32V, -2A)
| ROHM 罗姆 | ||
2SB1182 | Medium Power Transistor (32V, 2A) FTR • FTL Low profile flat-package for limited spece applications. Tape type can be used on automated line. Bulk type is also available. | ROHM 罗姆 | ||
2SB1182 | Medium Power Transistor ■ Features ● Low VCE(sat).VCE(sat) = -0.5V ● Complementary to 2SD1758 | KEXIN 科信电子 | ||
2SB1182 | PNP PLASTIC ENCAPSULATE TRANSISTORS PNP PLASTIC ENCAPSULATE TRANSISTORS Pb Lead(Pb)-Free | WEITRON | ||
2SB1182 | Medium power transistor (-32V, -2A) ● Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC / IB = -2A / -0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. ● Structure Epitaxial planar type PNP silicon transistor | ROHM 罗姆 | ||
2SB1182 | Silicon PNP transistor in a TO-252 Plastic Package. Descriptions Silicon PNP transistor in a TO-252 Plastic Package. Features Low VCE(sat),complements the 2SD1758. Applications Medium power amplifier applications. | FOSHAN 蓝箭电子 | ||
2SB1182 | Medium power transistor (-32V, -2A) ● Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862. ● Structure Epitaxial planar type PNP silicon transistor | ROHM 罗姆 | ||
2SB1182 | isc Silicon PNP Power Transistor DESCRIPTION • Small and slim package • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power dissipation | ISC 无锡固电 | ||
2SB1182 | Medium power transistor (32V, 2A) Medium power transistor (−32V, −2A) Features 1) Low VCE(sat). VCE(sat) = −0.5V (Typ.) (IC/IB = −2A / −0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 Structure Epitaxial planar type PNP silicon transistor | ROHM 罗姆 | ||
2SB1182 | Medium Power Transistor FEATURES ● Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) ● Complements the 2SD1758 APPLICATIONS ● Epitaxial planar type. ● PNP silicon transistor. | BILIN 银河微电 | ||
2SB1182 | MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB1182 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage | UTC 友顺 | ||
2SB1182 | Medium power transistor (32V,2A) Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862. | ROHM 罗姆 | ||
2SB1182 | Medium power transistor (32V, 2A) Medium power transistor (−32V, −2A) Features 1) Low VCE(sat). VCE(sat) = −0.5V (Typ.) (IC/IB = −2A / −0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 Structure Epitaxial planar type PNP silicon transistor | ROHM 罗姆 | ||
2SB1182 | TO-252-2L(4R) Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES Power Dissipation | JIANGSU 长电科技 | ||
2SB1182 | Medium power Transistor(32V,2A) Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. | ROHM 罗姆 | ||
2SB1182 | 双极型晶体管 | LUGUANG 鲁光电子 | ||
2SB1182 | 32V,2A,Medium Power PNP Bipolar Transistor | GALAXY 银河微电 | ||
2SB1182 | Bipolar Transistor | UTC 友顺 | ||
PNP Silicon General Purpose Transistor FEATURES The 2SB1182DX is designed for medium power amplifier application Low collector saturation voltage: VCE(sat)=-0.5V (Typ.) RoHS Compliant Product | SECOS 喜可士 | |||
MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB1182 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage | UTC 友顺 | |||
MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB1182 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage | UTC 友顺 | |||
MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB1182 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage | UTC 友顺 | |||
MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB1182 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage | UTC 友顺 | |||
MEDIUM POWER TRANSISTOR(-32V, -2A)
| ROHM 罗姆 | |||
PNP Silicon Epitaxial Transistors Features ● Low Collector Saturation Voltage ● Execllent current-to-gain characteristics ● Epoxy meets UL 94 V-0 flammability rating ● Moisture Sensitivity Level 1 | MCC | |||
PNP Epitaxial Transistor FEATURE * Small flat package. (DPAK) * PC= 1.5 W (mounted on ceramic substrate). * High saturation current capability. APPLICATION * Power driver and Dc to DC convertor . | CHENMKO 力勤 | |||
MEDIUM POWER TRANSISTOR(-32V, -2A)
| ROHM 罗姆 | |||
PNP Silicon Epitaxial Transistors Features ● Low Collector Saturation Voltage ● Execllent current-to-gain characteristics ● Epoxy meets UL 94 V-0 flammability rating ● Moisture Sensitivity Level 1 | MCC | |||
MEDIUM POWER TRANSISTOR(-32V, -2A)
| ROHM 罗姆 | |||
PNP Silicon Epitaxial Transistors Features ● Low Collector Saturation Voltage ● Execllent current-to-gain characteristics ● Epoxy meets UL 94 V-0 flammability rating ● Moisture Sensitivity Level 1 | MCC | |||
Medium power transistor (32V,2A) Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862. | ROHM 罗姆 | |||
MEDIUM POWER LOW VOLTAGE TRANSISTOR 文件:259.72 Kbytes Page:4 Pages | UTC 友顺 | |||
PNP Transistors 文件:1.24435 Mbytes Page:3 Pages | KEXIN 科信电子 | |||
MEDIUM POWER LOW VOLTAGE TRANSISTOR 文件:259.72 Kbytes Page:4 Pages | UTC 友顺 | |||
MEDIUM POWER LOW VOLTAGE TRANSISTOR 文件:259.72 Kbytes Page:4 Pages | UTC 友顺 | |||
MEDIUM POWER LOW VOLTAGE TRANSISTOR 文件:259.72 Kbytes Page:4 Pages | UTC 友顺 | |||
PNP Silicon Epitaxial Transistors 文件:509.7 Kbytes Page:4 Pages | MCC | |||
PNP Silicon Epitaxial Transistors 文件:509.7 Kbytes Page:4 Pages | MCC | |||
PNP Silicon Epitaxial Transistors 文件:509.7 Kbytes Page:4 Pages | MCC | |||
封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:散装 描述:TRANS PNP 32V 2A DPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | MCC | |||
PNP Silicon Epitaxial Transistors 文件:509.7 Kbytes Page:4 Pages | MCC | |||
封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:散装 描述:TRANS PNP 32V 2A DPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | MCC | |||
Power Transistor (??0V, ??A) 文件:92.25 Kbytes Page:3 Pages | ROHM 罗姆 |
2SB1182产品属性
- 类型
描述
- 型号
2SB1182
- 制造商
WEITRON
- 制造商全称
Weitron Technology
- 功能描述
PNP PLASTIC ENCAPSULATE TRANSISTORS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROHM |
2023+ |
TO-252 |
50000 |
原装现货 |
|||
ROHM(罗姆) |
24+ |
SC63 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
ROHM/罗姆 |
24+ |
NA/ |
8250 |
原装现货,当天可交货,原型号开票 |
|||
ROHM |
2016+ |
TO252 |
4291 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ROHM |
23+ |
TO-126 |
20000 |
全新原装假一赔十 |
|||
ROHM |
10+ |
TO252 |
500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ROHM |
24+ |
TO-252 |
27500 |
原装正品,价格最低! |
|||
ROHM/罗姆 |
25+ |
SC-63 |
32000 |
ROHM/罗姆全新特价2SB1182TLQ即刻询购立享优惠#长期有货 |
|||
ROHM/罗姆 |
22+ |
TO-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
CJ/长电 |
25+ |
TO252 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
2SB1182规格书下载地址
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DdatasheetPDF页码索引
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