2SB1182晶体管资料

  • 2SB1182别名:2SB1182三极管、2SB1182晶体管、2SB1182晶体三极管

  • 2SB1182生产厂家:TOY

  • 2SB1182制作材料:Si-PNP

  • 2SB1182性质:低频或音频放大 (LF)_功率放大 (L)

  • 2SB1182封装形式

  • 2SB1182极限工作电压:40V

  • 2SB1182最大电流允许值:2A

  • 2SB1182最大工作频率:<1MHZ或未知

  • 2SB1182引脚数

  • 2SB1182最大耗散功率:10W

  • 2SB1182放大倍数

  • 2SB1182图片代号:NO

  • 2SB1182vtest:40

  • 2SB1182htest:999900

  • 2SB1182atest:2

  • 2SB1182wtest:10

  • 2SB1182代换 2SB1182用什么型号代替:2SB837,2SB928,2SB1274,

2SB1182价格

参考价格:¥1.3467

型号:2SB1182TLQ 品牌:Rohm 备注:这里有2SB1182多少钱,2025年最近7天走势,今日出价,今日竞价,2SB1182批发/采购报价,2SB1182行情走势销售排行榜,2SB1182报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SB1182

Medium power Transistor(-32V, -2A)

● Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC / IB = -2A / -0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. ● Structure Epitaxial planar type PNP silicon transistor

ROHM

罗姆

2SB1182

MEDIUM POWER TRANSISTOR(-32V, -2A)

ROHM

罗姆

2SB1182

Medium Power Transistor (32V, 2A)

FTR • FTL Low profile flat-package for limited spece applications. Tape type can be used on automated line. Bulk type is also available.

ROHM

罗姆

2SB1182

Medium Power Transistor

■ Features ● Low VCE(sat).VCE(sat) = -0.5V ● Complementary to 2SD1758

KEXIN

科信电子

2SB1182

PNP PLASTIC ENCAPSULATE TRANSISTORS

PNP PLASTIC ENCAPSULATE TRANSISTORS Pb Lead(Pb)-Free

WEITRON

2SB1182

Medium power transistor (-32V, -2A)

● Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC / IB = -2A / -0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. ● Structure Epitaxial planar type PNP silicon transistor

ROHM

罗姆

2SB1182

Silicon PNP transistor in a TO-252 Plastic Package.

Descriptions Silicon PNP transistor in a TO-252 Plastic Package. Features Low VCE(sat),complements the 2SD1758. Applications Medium power amplifier applications.

FOSHAN

蓝箭电子

2SB1182

Medium power transistor (-32V, -2A)

● Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862. ● Structure Epitaxial planar type PNP silicon transistor

ROHM

罗姆

2SB1182

isc Silicon PNP Power Transistor

DESCRIPTION • Small and slim package • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power dissipation

ISC

无锡固电

2SB1182

Medium power transistor (32V, 2A)

Medium power transistor (−32V, −2A) Features 1) Low VCE(sat). VCE(sat) = −0.5V (Typ.) (IC/IB = −2A / −0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 Structure Epitaxial planar type PNP silicon transistor

ROHM

罗姆

2SB1182

Medium Power Transistor

FEATURES ● Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) ● Complements the 2SD1758 APPLICATIONS ● Epitaxial planar type. ● PNP silicon transistor.

BILIN

银河微电

2SB1182

MEDIUM POWER LOW VOLTAGE TRANSISTOR

DESCRIPTION The UTC 2SB1182 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage

UTC

友顺

2SB1182

Medium power transistor (32V,2A)

Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862.

ROHM

罗姆

2SB1182

Medium power transistor (32V, 2A)

Medium power transistor (−32V, −2A) Features 1) Low VCE(sat). VCE(sat) = −0.5V (Typ.) (IC/IB = −2A / −0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 Structure Epitaxial planar type PNP silicon transistor

ROHM

罗姆

2SB1182

TO-252-2L(4R) Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Power Dissipation

JIANGSU

长电科技

2SB1182

Medium power Transistor(32V,2A)

Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M.

ROHM

罗姆

2SB1182

双极型晶体管

LUGUANG

鲁光电子

2SB1182

32V,2A,Medium Power PNP Bipolar Transistor

GALAXY

银河微电

2SB1182

Bipolar Transistor

UTC

友顺

PNP Silicon General Purpose Transistor

FEATURES The 2SB1182DX is designed for medium power amplifier application Low collector saturation voltage: VCE(sat)=-0.5V (Typ.) RoHS Compliant Product

SECOS

喜可士

MEDIUM POWER LOW VOLTAGE TRANSISTOR

DESCRIPTION The UTC 2SB1182 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage

UTC

友顺

MEDIUM POWER LOW VOLTAGE TRANSISTOR

DESCRIPTION The UTC 2SB1182 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage

UTC

友顺

MEDIUM POWER LOW VOLTAGE TRANSISTOR

DESCRIPTION The UTC 2SB1182 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage

UTC

友顺

MEDIUM POWER LOW VOLTAGE TRANSISTOR

DESCRIPTION The UTC 2SB1182 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage

UTC

友顺

MEDIUM POWER TRANSISTOR(-32V, -2A)

ROHM

罗姆

PNP Silicon Epitaxial Transistors

Features ● Low Collector Saturation Voltage ● Execllent current-to-gain characteristics ● Epoxy meets UL 94 V-0 flammability rating ● Moisture Sensitivity Level 1

MCC

PNP Epitaxial Transistor

FEATURE * Small flat package. (DPAK) * PC= 1.5 W (mounted on ceramic substrate). * High saturation current capability. APPLICATION * Power driver and Dc to DC convertor .

CHENMKO

力勤

MEDIUM POWER TRANSISTOR(-32V, -2A)

ROHM

罗姆

PNP Silicon Epitaxial Transistors

Features ● Low Collector Saturation Voltage ● Execllent current-to-gain characteristics ● Epoxy meets UL 94 V-0 flammability rating ● Moisture Sensitivity Level 1

MCC

MEDIUM POWER TRANSISTOR(-32V, -2A)

ROHM

罗姆

PNP Silicon Epitaxial Transistors

Features ● Low Collector Saturation Voltage ● Execllent current-to-gain characteristics ● Epoxy meets UL 94 V-0 flammability rating ● Moisture Sensitivity Level 1

MCC

Medium power transistor (32V,2A)

Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862.

ROHM

罗姆

MEDIUM POWER LOW VOLTAGE TRANSISTOR

文件:259.72 Kbytes Page:4 Pages

UTC

友顺

PNP Transistors

文件:1.24435 Mbytes Page:3 Pages

KEXIN

科信电子

MEDIUM POWER LOW VOLTAGE TRANSISTOR

文件:259.72 Kbytes Page:4 Pages

UTC

友顺

MEDIUM POWER LOW VOLTAGE TRANSISTOR

文件:259.72 Kbytes Page:4 Pages

UTC

友顺

MEDIUM POWER LOW VOLTAGE TRANSISTOR

文件:259.72 Kbytes Page:4 Pages

UTC

友顺

PNP Silicon Epitaxial Transistors

文件:509.7 Kbytes Page:4 Pages

MCC

PNP Silicon Epitaxial Transistors

文件:509.7 Kbytes Page:4 Pages

MCC

PNP Silicon Epitaxial Transistors

文件:509.7 Kbytes Page:4 Pages

MCC

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:散装 描述:TRANS PNP 32V 2A DPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

PNP Silicon Epitaxial Transistors

文件:509.7 Kbytes Page:4 Pages

MCC

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:散装 描述:TRANS PNP 32V 2A DPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

Power Transistor (??0V, ??A)

文件:92.25 Kbytes Page:3 Pages

ROHM

罗姆

2SB1182产品属性

  • 类型

    描述

  • 型号

    2SB1182

  • 制造商

    WEITRON

  • 制造商全称

    Weitron Technology

  • 功能描述

    PNP PLASTIC ENCAPSULATE TRANSISTORS

更新时间:2025-10-29 23:22:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM
2023+
TO-252
50000
原装现货
ROHM(罗姆)
24+
SC63
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
ROHM/罗姆
24+
NA/
8250
原装现货,当天可交货,原型号开票
ROHM
2016+
TO252
4291
只做原装,假一罚十,公司可开17%增值税发票!
ROHM
23+
TO-126
20000
全新原装假一赔十
ROHM
10+
TO252
500
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ROHM
24+
TO-252
27500
原装正品,价格最低!
ROHM/罗姆
25+
SC-63
32000
ROHM/罗姆全新特价2SB1182TLQ即刻询购立享优惠#长期有货
ROHM/罗姆
22+
TO-252
100000
代理渠道/只做原装/可含税
CJ/长电
25+
TO252
54648
百分百原装现货 实单必成 欢迎询价

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