2SB1167晶体三极管资料使用说明书市场行情分销商-IC资料网

您好,欢迎来到114ic资料网！

114ic电子网登录注册

芯片资料

数据手册
丝印反查
库存查询
行业新闻
生产厂家
替换型号
晶体管

精确

位置：首页 > IC中文资料第11586页 > 2SB116

2SB116晶体管资料

2SB116别名：2SB116三极管、2SB116晶体管、2SB116晶体三极管
2SB116生产厂家：日本日电公司
2SB116制作材料：Ge-PNP
2SB116性质：低频或音频放大（LF）
2SB116封装形式：直插封装
2SB116极限工作电压：25V
2SB116最大电流允许值：0.05A
2SB116最大工作频率：<1MHZ或未知
2SB116引脚数：3
2SB116最大耗散功率：0.1W
2SB116放大倍数：β>80
2SB116图片代号：C-47
2SB116vtest：25
2SB116htest：999900
2SB116atest：0.05
2SB116wtest：0.1

2SB116代换 2SB116用什么型号代替：AC125,AC126,AC151,2SB54,2SB56,

型号	功能描述	生产厂家企业	LOGO
2SB1160	Silicon PNP Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SD1715 • High fT • Satisfactory linearity of hFE • Wide area of safe operation APPLICATIONS • For high power amplifier applications	SAVANTIC	SAVANTIC
2SB1160	Silicon PNP Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SD1715 • High fT • Satisfactory linearity of hFE • Wide area of safe operation APPLICATIONS • For high power amplifier applications	JMNIC 锦美电子	JMNIC
2SB1160	Silicon PNP Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SD1715 • High fT • Satisfactory linearity of hFE • Wide area of safe operation APPLICATIONS • For high power amplifier applications	ISC 无锡固电	ISC
2SB1160	Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEo=-150V(Min) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SD1715 APPLICATIONS • Designed for high power amplifier applications	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1161	Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- :V(BR)CEo=-160V(Min) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SD1716 APPLICATIONS • Designed for high power amplifier applications	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1161	Silicon PNP Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SD1716 • High fT • Wide area of safe operation APPLICATIONS • For high power amplifier applications	ISC 无锡固电	ISC
2SB1161	Silicon PNP Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SD1716 • High fT • Wide area of safe operation APPLICATIONS • For high power amplifier applications	JMNIC 锦美电子	JMNIC
2SB1161	Silicon PNP Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SD1716 • High fT • Wide area of safe operation APPLICATIONS • For high power amplifier applications	SAVANTIC	SAVANTIC
2SB1162	Silicon PNP Power Transistors DESCRIPTION • With TO-3PL package • Complement to type 2SD1717 • Excellent linearity of hFE • Wide area of safe operation (ASO) • High transition frequency fT APPLICATIONS • For high power amplifier applications	JMNIC 锦美电子	JMNIC
2SB1162	Silicon PNP Power Transistors DESCRIPTION • With TO-3PL package • Complement to type 2SD1717 • Excellent linearity of hFE • Wide area of safe operation (ASO) • High transition frequency fT APPLICATIONS • For high power amplifier applications	SAVANTIC	SAVANTIC
2SB1162	Silicon PNP Power Transistors DESCRIPTION • With TO-3PL package • Complement to type 2SD1717 • Excellent linearity of hFE • Wide area of safe operation (ASO) • High transition frequency fT APPLICATIONS • For high power amplifier applications	ISC 无锡固电	ISC
2SB1162	Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- :V(BR)CEO=-160V(Min) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SD1717 APPLICATIONS • Designed for high power amplifier applications	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1163	Silicon PNP Power Transistors Silicon PNP Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SD1718 ·Excellent linearity of hFE ·Wide area of safe operation (ASO) ·High transition frequency fT APPLICATIONS ·For high power amplifier applications	ISC 无锡固电	ISC
2SB1163	SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER Si NPN Triple Diffused Plabar High Power Amplifier Commplementary Pair with 2SB1163	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2SB1163	Silicon PNP Power Transistors Silicon PNP Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SD1718 ·Excellent linearity of hFE ·Wide area of safe operation (ASO) ·High transition frequency fT APPLICATIONS ·For high power amplifier applications	SAVANTIC	SAVANTIC
2SB1163	Silicon PNP Power Transistors Silicon PNP Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SD1718 ·Excellent linearity of hFE ·Wide area of safe operation (ASO) ·High transition frequency fT APPLICATIONS ·For high power amplifier applications	JMNIC 锦美电子	JMNIC
2SB1165	50V/5A Switching Applications 50V/5A Switching Applications Applications · Relay drivers, high-speed inverters, converters. Features · Low collector-to-emitter saturation voltage. · High fT. · Excellent linearity of hFE. · Fast switching time.	SANYO 三洋	SANYO
2SB1166	50V/8A Switching Applications 50V/8A Switching Applications Features · Low collector-to-emitter saturation voltage. · High fT. · Excellent linearity of hFE. · Fast switchint time. Applications · Relay drivers, high-speed inverters, converters.	SANYO 三洋	SANYO
2SB1167	100V/3A Switching Applications Features 1. Low collector-to-emitter saturation voltage 2. High f T 3. Excellent linearity of h FE 4. Fast switching time	SANYO 三洋	SANYO
2SB1167	isc Silicon PNP Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage VCEO: -100 V(Min) ·Low Collector Saturation Voltage : VCE(sat) = -0.4V(Max.)@ IC=-1.5A ·Complement to the NPN 2SD1724 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high vol	ISC 无锡固电	ISC
2SB1168	100V/4A Switching Applications Large Current Switching Applications Features · Relay drivers, high-speed inverters, converters. · Low collector-to-emitter saturation voltage. · High fT. · Excellent linearity of hFE. · Short switching time.	SANYO 三洋	SANYO
2SB1169	For power amplification Silicon PNP epitaxial planar type For power amplification ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc	Panasonic 松下	Panasonic
2SB1169A	Silicon PNP Epitaxial Planar Type ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector-emitter saturation voltage VCE(sat)	KEXIN 科信电子	KEXIN
2SB1169A	For power amplification Silicon PNP epitaxial planar type For power amplification ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc	Panasonic 松下	Panasonic
2SB1160	Silicon PNP Power Transistors 文件：162.63 Kbytes Page：4 Pages	SAVANTIC	SAVANTIC
2SB1160_15	Silicon PNP Power Transistors 文件：192.93 Kbytes Page：4 Pages	JMNIC 锦美电子	JMNIC
2SB1160_2014	Silicon PNP Power Transistors 文件：192.93 Kbytes Page：4 Pages	JMNIC 锦美电子	JMNIC
2SB1161	Silicon PNP Power Transistors 文件：122.35 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SB1161_15	Silicon PNP Power Transistors 文件：165.4 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1161_2014	Silicon PNP Power Transistors 文件：165.4 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1162	Silicon PNP Power Transistors 文件：114.29 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SB1162_15	Silicon PNP Power Transistors 文件：161.26 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1162_2014	Silicon PNP Power Transistors 文件：161.26 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1163	Silicon PNP Power Transistors 文件：114.27 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SB1163	Silicon PNP Power Transistor 文件：127.42 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1163_15	Silicon PNP Power Transistors 文件：161.14 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1163_2014	Silicon PNP Power Transistors 文件：161.14 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1165	Silicon PNP Power Transistors 文件：115.34 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SB1165	Silicon PNP Power Transistors 文件：163.34 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1165	Silicon PNP Power Transistors 文件：135.54 Kbytes Page：3 Pages	ISC 无锡固电	ISC
2SB1165	Silicon PNP Power Transistors 文件：113.71 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SB1165_15	Silicon PNP Power Transistors 文件：163.34 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1165_2014	Silicon PNP Power Transistors 文件：163.34 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1166	PNP Epitaxial Planar Silicon Transistors 50V/8A Switching Applications	ONSEMI 安森美半导体	ONSEMI
2SB1167	PNP Epitaxial Planar Silicon Transistors 100V/3A Switching Applications	ONSEMI 安森美半导体	ONSEMI
2SB1167	TO-126 Plastic-Encapsulate Transistors 文件：1.04526 Mbytes Page：4 Pages	JIANGSU 长电科技	JIANGSU
2SB1168	PNP Epitaxial Planar Silicon Transistors Large Current Switching Applications	ONSEMI 安森美半导体	ONSEMI
2SB1169_15	PNP Transistors 文件：1.22197 Mbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB1169A_15	PNP Transistors 文件：1.22015 Mbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB1169A-O	PNP Transistors 文件：1.22015 Mbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB1169A-P	PNP Transistors 文件：1.22015 Mbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB1169A-Q	PNP Transistors 文件：1.22015 Mbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB1169A-R	PNP Transistors 文件：1.22015 Mbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB1169-O	PNP Transistors 文件：1.22197 Mbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB1169-P	PNP Transistors 文件：1.22197 Mbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB1169-Q	PNP Transistors 文件：1.22197 Mbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SB1169-R	PNP Transistors 文件：1.22197 Mbytes Page：2 Pages	KEXIN 科信电子	KEXIN

2SB116产品属性

类型
描述
型号
2SB116
制造商
ISC
制造商全称
Inchange Semiconductor Company Limited
功能描述
Silicon PNP Power Transistors

2SB116供应商更多...

更新时间：2025-12-25 8:30:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳诚思涵科技有限公司	2SB1169A	PANASONIC	18+	TO-252	85600	保证进口原装可开17%增值税发票	询价
深圳市金芯世纪电子有限公司	2SB1168	RENESAS/瑞萨	22+	TO126	100000	代理渠道/只做原装/可含税	询价
深圳市得捷芯城科技有限公司	2SB1168	SANYO/三洋	24+	NA/	210	优势代理渠道,原装正品,可全系列订货开增值税票	询价
中天科工半导体（深圳）有限公司	2SB1168	SANYO/三洋	20+	TO-126	38900	原装优势主营型号-可开原型号增税票	询价
深圳市豪迈兴电子有限公司	2SB117	NEC	24+	CAN3	8858	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市中联芯电子有限公司	2SB1168	SANYO/三洋	24+	TO-126	7800	全新原厂原装正品现货,低价出售,实单可谈	询价
深圳市一线半导体有限公司	2SB1167T	SANYO	24+	TO-126	1000		询价
深圳市纳立科技有限公司	2SB1167T		三年内		1983	只做原装正品	询价
艾睿（深圳）半导体有限公司	2SB1167T	SANYO/三洋	2447	TO-126	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市创新迹电子有限公司	2SB1167T	SANYO	22+	TO126	20000	公司只有原装品质保证	询价

2SB116芯片相关品牌

2SB116规格书下载地址

2SB116参数引脚图相关

2SB116数据表相关新闻

2SB562L-TO92NLK-B-TG_UTC代理商
2SB562L-TO92NLK-B-TG_UTC代理商
2023-3-14
2SA928AL-TO92NLB-Y-TG
2SA928AL-TO92NLB-Y-TG
2023-2-1
2SA812-T1B-A/S6 原装正品现货
支持实单价格优势有单必成
2022-3-30
2SB649 MOS
www.jskj-ic.com
2021-9-10
2SA2198
2SA2198，全新原装当天发货或门市自取0755-82732291.
2020-4-24
2SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107

您好,欢迎来到114ic资料网！

2SB116晶体管资料

2SB116产品属性

2SB116供应商更多...

2SB116芯片相关品牌

2SB116规格书下载地址

2SB116参数引脚图相关

2SB116数据表相关新闻

2SB562L-TO92NLK-B-TG_UTC代理商

2SA928AL-TO92NLB-Y-TG

2SA812-T1B-A/S6 原装正品现货

2SB649 MOS

2SA2198

2SB1386-P-PNP硅外延晶体管

DdatasheetPDF页码索引