2SB1155晶体三极管参数引脚图批发采购价格松下-IC资料网

找IC，尽在114IC

登录注册

芯片资料

芯片资料
丝印反查
库存查询
行业新闻
制造商
替换型号
晶体管

精确

位置：首页 > IC中文资料 > 2SB115

2SB115晶体管资料

2SB115别名：2SB115三极管、2SB115晶体管、2SB115晶体三极管
2SB115生产厂家：日本日电公司
2SB115制作材料：Ge-PNP
2SB115性质：低频或音频放大（LF）
2SB115封装形式：直插封装
2SB115极限工作电压：25V
2SB115最大电流允许值：0.05A
2SB115最大工作频率：<1MHZ或未知
2SB115引脚数：3
2SB115最大耗散功率：0.1W
2SB115放大倍数：β>60
2SB115图片代号：C-47
2SB115vtest：25
2SB115htest：999900
2SB115atest：0.05
2SB115wtest：0.1

2SB115代换 2SB115用什么型号代替：AC125,AC126,AC151,2SB54,2SB56,

型号	功能描述	生产厂家企业	LOGO
2SB1150	PNP SILICON DARLINGTON TRANSISTOR DESCRIPTION The 2SB1150 is a darlington transistor built-in a zener diode at B-C and a dumper diode at E-C. It is suitable for use to operate from IC without predriver, such as hammer driver.	NEC 瑞萨	NEC
2SB1151	Low Collector Saturation Voltage SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N	NEC 瑞萨	NEC
2SB1151	LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES High Power Dissipation : PD=1.5W(Ta=25℃) Complementary to 2SD1691.	UTC 友顺	UTC
2SB1151	Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SD1691 ·Low saturation voltage ·Large current ·High total power dissipation:PT=1.3W ·Large current capability and wide SOA APPLICATIONS ·DC-DC converter ·Driver of solenoid or motor	SAVANTIC	SAVANTIC
2SB1151	Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SD1691 ·Low saturation voltage ·Large current ·High total power dissipation:PT=1.3W ·Large current capability and wide SOA APPLICATIONS ·DC-DC converter ·Driver of solenoid or motor	JMNIC 锦美电子	JMNIC
2SB1151	It is intented for use in power amplifier and switching applications. DESCRIPTION It is intented for use in power amplifier and switching applications.	TGS	TGS
2SB1151	Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SD1691 ·Low saturation voltage ·Large current ·High total power dissipation:PT=1.3W ·Large current capability and wide SOA APPLICATIONS ·DC-DC converter ·Driver of solenoid or motor	ISC 无锡固电	ISC
2SB1151	Complementary Silicon Power Ttransistors DESCRIPTION It is intented for use in power amplifier and switching applications.	TGS	TGS
2SB1151L-T60-T	LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES High Power Dissipation : PD=1.5W(Ta=25℃) Complementary to 2SD1691.	UTC 友顺	UTC
2SB1151-T60-T	LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES High Power Dissipation : PD=1.5W(Ta=25℃) Complementary to 2SD1691.	UTC 友顺	UTC
2SB1154	Silicon PNP epitaxial planar type(For power switching) For power switching Complementary to 2SD1705 ■Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector current IC ● Full-pack package which can be installed to the heat sink with one scre	PANASONIC 松下	PANASONIC
2SB1154	Silicon PNP Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1705 ·Low collector saturation voltage ·Satisfactory linearity of hFE APPLICATIONS ·For power switching applications	ISC 无锡固电	ISC
2SB1154	Silicon PNP Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1705 ·Low collector saturation voltage ·Satisfactory linearity of hFE APPLICATIONS ·For power switching applications	SAVANTIC	SAVANTIC
2SB1154	Silicon PNP Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1705 ·Low collector saturation voltage ·Satisfactory linearity of hFE APPLICATIONS ·For power switching applications	JMNIC 锦美电子	JMNIC
2SB1155	Silicon PNP Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SD1706 • Low collector saturation voltage • Satisfactory linearity of hFE APPLICATIONS • For power switching applications	JMNIC 锦美电子	JMNIC
2SB1155	Silicon PNP Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SD1706 • Low collector saturation voltage • Satisfactory linearity of hFE APPLICATIONS • For power switching applications	SAVANTIC	SAVANTIC
2SB1155	SILICON NPN EPITAXIAL PLANAR TYPE POWER SWITCHING Coming Soon. If you have some information on related parts, please share useful information by adding links below.	PANASONIC 松下	PANASONIC
2SB1155	Silicon PNP epitaxial planar type(For power switching) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1706 ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector current IC ● Full-pack package which can be installed to the heat	PANASONIC 松下	PANASONIC
2SB1155	Silicon PNP Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SD1706 • Low collector saturation voltage • Satisfactory linearity of hFE APPLICATIONS • For power switching applications	ISC 无锡固电	ISC
2SB1155	Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) • Good Linearity of hFE • Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -7A • Complement to Type 2SD1706 APPLICATIONS • Designed for power switching applications	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1156	Silicon PNP Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1707 ·Low collector saturation voltage ·Large collector current APPLICATIONS ·For power switching applications	ISC 无锡固电	ISC
2SB1156	Silicon PNP epitaxial planar type(For power switching) For power switching Complementary to 2SD1707 ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector current IC ● Full-pack package which can be installed to the heat sink with one screw	PANASONIC 松下	PANASONIC
2SB1156	Silicon PNP Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1707 ·Low collector saturation voltage ·Large collector current APPLICATIONS ·For power switching applications	SAVANTIC	SAVANTIC
2SB1156	Silicon PNP Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1707 ·Low collector saturation voltage ·Large collector current APPLICATIONS ·For power switching applications	JMNIC 锦美电子	JMNIC
2SB1157	Silicon PNP Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SD1712 • High fT • Wide area of safe operation APPLICATIONS • For high power amplifier applications	ISC 无锡固电	ISC
2SB1157	Silicon PNP Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SD1712 • High fT • Wide area of safe operation APPLICATIONS • For high power amplifier applications	JMNIC 锦美电子	JMNIC
2SB1157	Silicon PNP Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SD1712 • High fT • Wide area of safe operation APPLICATIONS • For high power amplifier applications	SAVANTIC	SAVANTIC
2SB1157	Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- :V(BR)CEo=-100V(Min) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SD1712 APPLICATIONS • Designed for high power amplifier applications	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1158	Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- :V(BR)CEO=-120V(Min) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SD1713 APPLICATIONS • Designed for high power amplifier applications	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1158	Silicon PNP Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SD1713 • High fT • Wide area of safe operation APPLICATIONS • For high power amplifier applications	SAVANTIC	SAVANTIC
2SB1158	Silicon PNP Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SD1713 • High fT • Wide area of safe operation APPLICATIONS • For high power amplifier applications	JMNIC 锦美电子	JMNIC
2SB1158	Silicon PNP Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SD1713 • High fT • Wide area of safe operation APPLICATIONS • For high power amplifier applications	ISC 无锡固电	ISC
2SB1159	Silicon PNP Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SD1714 • High fT • Wide area of safe operation APPLICATIONS • For high power amplifier applications	ISC 无锡固电	ISC
2SB1159	Silicon PNP Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SD1714 • High fT • Wide area of safe operation APPLICATIONS • For high power amplifier applications	JMNIC 锦美电子	JMNIC
2SB1159	Silicon PNP Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SD1714 • High fT • Wide area of safe operation APPLICATIONS • For high power amplifier applications	SAVANTIC	SAVANTIC
2SB1151	LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT 文件：229.2 Kbytes Page：4 Pages	UTC 友顺	UTC
2SB1151	Silicon PNP Power Transistor 文件：135.89 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1151	Silicon PNP Power Transistors 文件：176 Kbytes Page：4 Pages	SAVANTIC	SAVANTIC
2SB1151	PNP Plastic Encapsulated Transistor 文件：304.07 Kbytes Page：2 Pages	SECOS 喜可士	SECOS
2SB1151	Transistor-Bipolar Power Transistors	RENESAS 瑞萨	RENESAS
2SB1151_10	LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT 文件：229.2 Kbytes Page：4 Pages	UTC 友顺	UTC
2SB1151_15	Silicon PNP Power Transistors 文件：224.59 Kbytes Page：4 Pages	JMNIC 锦美电子	JMNIC
2SB1151_2014	Silicon PNP Power Transistors 文件：224.59 Kbytes Page：4 Pages	JMNIC 锦美电子	JMNIC
2SB1151G	Transistors	WILLAS 威伦电子	WILLAS
2SB1151-G	中等功率双极型晶体管	MCC	MCC
2SB1151-G	PNP Plastic-Encapsulate Transistors 文件：305.43 Kbytes Page：2 Pages	MCC	MCC
2SB1151G-X-AA3-R	LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT 文件：229.2 Kbytes Page：4 Pages	UTC 友顺	UTC
2SB1151G-X-T60-K	LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT 文件：229.2 Kbytes Page：4 Pages	UTC 友顺	UTC
2SB1151G-X-TN3-R	LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT 文件：229.2 Kbytes Page：4 Pages	UTC 友顺	UTC
2SB1151L-X-AA3-R	LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT 文件：229.2 Kbytes Page：4 Pages	UTC 友顺	UTC
2SB1151L-X-T60-K	LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT 文件：229.2 Kbytes Page：4 Pages	UTC 友顺	UTC
2SB1151L-X-TN3-R	LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT 文件：229.2 Kbytes Page：4 Pages	UTC 友顺	UTC
2SB1151-O	PNP Plastic-Encapsulate Transistors 文件：305.43 Kbytes Page：2 Pages	MCC	MCC
2SB1151-O-BP	封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR）描述：TRANS PNP 60V 5A TO126 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	MCC	MCC
2SB1151-Y	PNP Plastic Encapsulated Transistor 文件：304.07 Kbytes Page：2 Pages	SECOS 喜可士	SECOS
2SB1151-Y	PNP Plastic-Encapsulate Transistors 文件：305.43 Kbytes Page：2 Pages	MCC	MCC
2SB1151-Y-BP	封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR）描述：TRANS PNP 60V 5A TO126 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	MCC	MCC
2SB1151-Y-C	PNP Plastic Encapsulated Transistor 文件：304.07 Kbytes Page：2 Pages	SECOS 喜可士	SECOS
2SB1152	isc Silicon PNP Power Transistor 文件：155.98 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SB1153	isc Silicon PNP Power Transistor 文件：154.76 Kbytes Page：2 Pages	ISC 无锡固电	ISC

2SB115产品属性

类型
描述
NPN/PNP：
PNP
Vcbo (V)：
-70
VCEO (V)：
-70
Vebo (V)：
-8
Automotive：
YES
IC (A) @25 °C：
-3
VCE(sat) (V) max.：
-1.2
hFE min.：
2000
hFE max.：
15000
Pc (W)：
15
Package Type：
MP-5
Production Status：
EOL

2SB115供应商更多...

更新时间：2026-5-14 15:15:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市科芯源微电子有限公司	2SB1162	PANASONIC丨松下	2026+	TO3P	54648	百分百原装现货实单必成欢迎询价	询价
深圳市宏捷佳电子科技有限公司	2SB1156	原厂	2023+	TO-3PFM	50000	原装现货	询价
深圳市明嘉莱科技有限公司	2SB1162Q	PANASONIC/松下	25+	TR	880000	明嘉莱只做原装正品现货	询价
深圳市创新迹电子有限公司	2SB1155	MAT	22+	TO-3PF	20000	公司只有原装品质保证	询价
深圳市威雅利发展有限公司	2SB1155	MAT	18+	TO-3PF	1900	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市豪迈兴电子有限公司	2SB116	NEC	24+	CAN3	4231	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市河锋鑫科技有限公司	2SB1155	PANASONIC/松下	22+	TO-3PF	6000	十年配单,只做原装	询价
深圳市一线半导体有限公司	2SB1155		24+	TOP-3FA	10000	全新	询价
深圳市博中泰实业有限公司	2SB1155	MAT	25+	TO-3P	90000	全新原装现货	询价
深圳市柯尔基电子有限公司	2SB1155	PANASONIC	23+24	TO-3P	28950	原装现货.优势热卖.终端BOM表可配单	询价

2SB115芯片相关品牌

2SB115规格书下载地址

2SB115参数引脚图相关

2SB115数据表相关新闻

2SB562L-TO92NLK-B-TG_UTC代理商
2SB562L-TO92NLK-B-TG_UTC代理商
2023-3-14
2SA928AL-TO92NLB-Y-TG
2SA928AL-TO92NLB-Y-TG
2023-2-1
2SA812-T1B-A/S6 原装正品现货
支持实单价格优势有单必成
2022-3-30
2SB649 MOS
www.jskj-ic.com
2021-9-10
2SA2198
2SA2198，全新原装当天发货或门市自取0755-82732291.
2020-4-24
2SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107
P108
P109

找IC，尽在114IC

2SB115晶体管资料

2SB115产品属性

2SB115供应商更多...

2SB115芯片相关品牌

2SB115规格书下载地址

2SB115参数引脚图相关

2SB115数据表相关新闻

2SB562L-TO92NLK-B-TG_UTC代理商

2SA928AL-TO92NLB-Y-TG

2SA812-T1B-A/S6 原装正品现货

2SB649 MOS

2SA2198

2SB1386-P-PNP硅外延晶体管

DdatasheetPDF页码索引