PNP Transistors

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Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM: 500 mW (Tamb=25℃) Collector current ICM: -1 A Collector current (Pulse) ICP: -2 A Collector-base voltage V(BR)CBO: -25 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃

PNP Epitaxial Planar Silicon Transistors

Features ● Very small size making it easy to provide highdensity, small-sized hybrid IC’s.

PNP Silicon Medium Power Transistor

FEATURES Power dissipation PCM : 500mW˄ Tamb=25°C Collector current ICM : -1 A Collector-base voltage VB(BR)CBO : -25 V Operating and storage junction temperature range TJ,Tstg: -55ć to +150ć

TRANSISTOR(PNP)

FEATURES ● Small Flat Package ● LF Amplifier, Electronic Governor Applications

PNP Epitaxial Planar Silicon Transistors

FEATURES ● Very small size making it easy to provide High-density,small-size hybrid IC’s.